Yb:Y2－2xLa2xO3激光透明陶瓷的光谱性能

对一种低温易烧结的Yb:Y_2-2xLa_2xO₃激光透明陶瓷的光谱性能进行了初步研究，Yb:Y_2-2xLa_2xO₃激光透明陶瓷具有宽的吸收带和大的吸收截面，在最强的吸收峰977nm处吸收截面达4.0×10^-20cm²；其荧光发射寿命为1.1ms，发射截面在1033nm处为1.0×10^-20cm²，在1077nm处为0.7×10^-20cm².Yb:Y_2-2xLa_2xO₃陶瓷的各项光学性能指标接近或达到单晶的指标. 关键词： 氧化镧钇 激光陶瓷 低温烧结 光谱性能     

Three-photon absorption and subsequent excited-state absorption in CdS

The nonlinear absorption of single picosecond light pulses (λ = 1.06 μm) in CdS is investigated at very high light intensities. Three-photon absorption and subsequent excited-state absorption of the generated electrons and holes explain the rapid decrease of transmission with increasing intensity. A three-photon absorption cross-section of σ⁽³⁾ = (2±0.5) × 10^-80 cm⁶ s² and an average excited state absorption cross-section of σ_ex = (7 ± 3) × 10^-18 cm² was determined.     

Measurement of the absolute Raman scattering cross sections of sulfur and the standoff Raman detection of a 6‐mm‐thick sulfur specimen at 1500 m

The absolute Raman scattering cross sections (σ_RS) for the 471, 217, and 153 cm⁻¹ modes of sulfur were measured as 6.0 ± 1.2 × 10⁻²⁷, 7.7 ± 1.6 × 10⁻²⁷, and 1.2 ± 0.24 × 10⁻²⁶ cm² at 815, 799, and 794 nm, respectively, using a 785‐nm pump laser. The corresponding values of σ_RS at 1120, 1089, and 1081 nm were determined to be 1.5 ± 0.3 × 10⁻²⁷, 1.2 ± 0.24 × 10⁻²⁷, and 1.2 ± 0.24 × 10⁻²⁷ cm² using a 1064‐nm laser. A temperature‐controlled, small‐cavity (2.125 mm diameter) blackbody source was used to calibrate the signal output of the Raman spectrometers for these measurements. Standoff Raman detection of a 6‐mm‐thick sulfur specimen located at 1500 m from the pump laser and the Raman spectrometer was made using a 1.4‐W, CW, 785‐nm pump laser. Copyright © 2010 John Wiley & Sons, Ltd.     

Excited state absorption dynamics of fast relaxing dye no. 5

The excited state absorption dynamics of the fast mode-locking dye No. 5 for Nd-glass lasers is investigated. The excited state absorption cross-section σ_ex for 1.053 μm picosecond pulse excitation is determined from energy transmission measurements. The excited state absorption populates a higher lying singlet state S₄. The population lifetime τ₄ of this state is determined from two-step excited fluorescence quantum yield measurements. The obtained values are σ_ex= (5.5±1)×10^-17 cm² and τ₄=60±20 fs.     

High resolution ethylene absorption spectrum between 6035 and 6210 cm-1

A two-channel photo-acoustic spectrometer (PA spectrometer) with a near infrared diode laser was used for taking measurements of a high resolution ethylene absorption spectrum. A semiconductor TEC-100 laser with an outer resonator generates a continuous single-frequency radiation in the range 6030–6300 cm^-1. A newly designed model of photo-acoustic detector (PAD) in the form of a ring type resonator provides for measurement of weak absorption cross-section equal to 4×10^-23 cm²/mol at a laser radiation power of 3 mW. The PAD threshold sensitivity is 2×10^-9 cm^-1 Hz^-1/2 W, when the signal to noise ratio equals to 1. The ethylene absorption spectrum within the range 6035–6210 cm^-1 was measured for the first time with a spectral resolution of 10 MHz. The reported line centre positions have an uncertainty of ± 0.0005 cm^-1. The precise measurements of ethylene absorption cross-sections were carried out using the mixture of high purity ethylene and broadening gas (nitrogen) at the mixture ratio 1:50–1:200. Measurements were carried out at a mixture pressure of about 4.2 kPa. PACS 42.62.Fi; 42.55.Px     

Spectroscopic characterization of Yb:Sc2O3 transparent ceramics

Yb：Sc2O3 transparent ceramics are fabricated by a conventional ceramic process and sintering in H2 atmosphere. The room-temperature spectroscopic properties are investigated, and the Raman spectrum shows an obvious vibration characteristic band centred at 415 cm-1. There are three broad absorption bands around 891, 937, and 971 nm, respectively. The strongest emission peak is centred at 1.04 μm with a broad bandwidth （11 nm） and an emission cross-section of 1.8×10^-20 cm^2. The gain coefficient implies a possible laser ability in a range from 990 nm to 1425 nm. The energy-level structure shows that Yb：Sc2O3 ceramics have large Stark splitting at the ground state level due to their strong crystal field. All the results show that Yb：Sc2O3 transparent ceramics are a promising material for short pulse lasers.     

表面层对1 064 nm高反射镜损伤阈值影响

 采用电子束蒸发的方法制备了３种具有不同表面层材料及结构的中心波长为1 064 nm的零度高反镜,３种膜系表面层分别为1/4波长光学厚度的HfO₂,1/2波长光学厚度的SiO₂,以及1/4波长光学厚度的SiO₂。光谱测试表明：三者在1 064 nm处均有较高的反射率（高于99.8%）,利用热透镜的方法测量得到３个膜系辐照激光正入射情况下,薄膜对光的吸收比例分别为3.0×10^-6,5.0×10^-6和6.5×10^-6,其损伤阈值分别为32.5,45.2和28.4 J/cm²。并在膜层内部电场分布和膜层材料物理特性的基础上分析了３种不同表面层膜系吸收和损伤阈值差别的原因。     

Bulk crystal growth and efficient diode-pumped laser performance of Yb3+:Sc2SiO5

A bulk crystal of Yb:Sc₂SiO₅ (Yb:SSO) with favorable thermal properties was successfully obtained by the Czochralski method. The energy level diagrams for Yb:SSO crystal were determined by optical spectroscopic analysis and semi-empirical crystal-field calculations using the simple overlap model. The full width at half maximum of the absorption band centering at 976 nm was calculated to be 24 nm with a peak absorption cross-section of 9.2×10^-21 cm². The largest ground-state splitting of Yb³⁺ ions is up to 1027 cm^-1 in a SSO crystal host. Efficient diode-pumped laser performance of Yb:SSO was primarily demonstrated with a slope efficiency of 45% and output power of 3.55 W.     

Near infrared cw-CRDS coupled to laser photolysis: Spectroscopy and kinetics of the HO2 radical

We present in this work a new experimental set-up for sensitive detection of reactive species: continuous wave cavity ring-down spectroscopy (cw-CRDS) as a detection method in laser photolysis reactor. HO₂ radicals were generated by using a 248 nm photolysis of SOCl₂/CH₃OH/O₂ mixtures and were detected in the first vibrational overtone of the OH stretch around 6625 cm^-1, using a DFB diode laser. In order to perform the spectroscopic and kinetic measurements of the HO₂ radical, two different timing schemes have been used. The absorption line strength of the transition at 6625.784 cm^-1 has been extracted from kinetic measurement to (5.2±1.0)×10^-21 cm² molecule^-1cm^-1. The detection limit for the actual set-up is 2×10¹² molecules cm^-3. PACS 42.62.Fi; 82.33.Tb; 82.20.W     

Photodesorption from ultra-thin metal films – a comparison of SO<Subscript>2</Subscript> and NO<Subscript>2</Subscript> on Ag/Si(100)

The photochemistry of SO₂ on thin epitaxial Ag films (5–60 nm) deposited on Si(100) has been studied using laser light with the wavelengths of 266, 355, and 532 nm. SO₂ desorbs with cross sections of 1.7×10^-19,1.7×10^-20 and 2.9×10^-21 cm², respectively. The average translation energy, 〈E_trans/2k〉, is 440 K for 266 and 355 nm light, and 270 K for 532 nm light. Cross sections for a 60 nm thick Ag film are practically identical to the ones for Ag(111) as the substrate. An increase by a factor of ∼3.5 is observed when the film thickness is reduced to 5 nm for 266 and 355 nm light. No significant change is observed for 532 nm excitation. The film thickness has no significant influence on the translational energy of the photodesorbed molecules. The data are discussed in connection with the change of absorptivity of the metal film–semiconductor system. A model is put forward which takes into account the light absorption in the Si substrate and the reduced relaxation of excited electrons in Si. Modelling indicates that electrons excited in the Si substrate with energies and parallel momenta not allowed in Ag contribute to the surface chemistry after crossing the gap in the projected band structure of Ag(111). PACS 82.45.MP; 73.63.-b; 82.50.Bc     

Quenching kinetics and small signal gain spectrum of the ZnI photodissociation laser

By photodissociation ZnI₂ with 193 nm (ArF) laser radiation, the rate constants for quenching of the upper and lower energy levels of the ZnI (B → X) laser by ZnI₂ have been measured to be (1.7 ± 0.2) × 10^-9 and (1.4 ± 0.4) × 10^-9 cm³ s^-1, respectively. Although the former rate constant was found to be laser intensity-dependent for I ? 10⁵ W cm^-2, the ZnI(B) state radiative lifetime was determined to be 26 ± 4 ns. Also, the small signal gain coefficient, g₀, of this molecular laser has a peak value of ? 15% cm^-1 at λ ? 602 nm and exceeds 5% cm^-1 for 591 nm ≤ λ ≤ 608 nm for a potential tuning range of at least 170 Å.     

Effect of higher order nonlinear optical processes on optical absorption in the photorefractive BSO and BGO crystals

The processes of nonlinear refraction and nonlinear absorption are studied in the photorefractive Bi₁₂SiO₂₀ (BSO) and Bi₁₂GeO₂₀ (BGO) crystals at a wavelength of a picosecond Nd:YAG laser of 1064 nm. The nonlinear refraction in the crystals is shown to be related to the Kerr effect, and the nonlinear absorption at this wavelength, to three-photon absorption. The three-photon absorption coefficients of the BSO and BGO crystals are equal, respectively, to (2.5±0.8) ×10^?20 and (4.4±1.3) ×10^?20 cm³W^?2.     

Diode-laser-based ultraviolet absorption sensor for nitric oxide

An all-solid-state continuous-wave laser system for ultraviolet absorption measurements of the nitric oxide (NO) molecule has been developed and demonstrated. The single-mode, tunable output of a 10-mW, 395-nm external-cavity diode laser (ECDL) is sum-frequency-mixed with the output of a 115-mW, frequency-doubled, diode-pumped Nd:YAG laser in a beta-barium-borate crystal to produce 40 nW of tunable radiation at 226.8 nm. The wavelength of the 395-nm ECDL is then scanned over NO absorption lines to produce fully resolved absorption spectra. Initial results from mixtures of NO in nitrogen in a room-temperature gas cell are discussed. The estimated NO detection limit of the system for a demonstrated absorption sensitivity of 2×10^-3 is 0.2 ppm per meter of path length for 300 K gas. The estimated accuracy of the measurements is ±10%. Received: 25 February 2002 / Revised version: 31 May 2002 / Published online: 8 August 2002     

Oscillator strengths of the first forbidden lines of rubidium

The oscillator strengths of the 5s-4d first forbidden lines of rubidium at 5165 Å were determined by performing CW tunable dye laser absorption measurements. Measured oscillator strengths of 8.06±0.48×10^-7 and 5.38±0.31×10^-7 for the ²D_{$\text{5}\text{2}$} and ²D_{$\text{3}\text{2}$} states, respectively, are compared with previously published values.     

Nonlinear Optics to Glucose Sensing: Multifunctional Nitrogen and Boron Doped Carbon Dots with Solid-State Fluorescence in Nanoporous Silica Films

Multifunctional triple color photoluminescent (PL) nitrogen–boron doped carbon quantum dots (CQDs) with high quantum yield (QY) of 58% are fabricated by one step femtosecond pulsed laser irradiation of a single precursor (2-aminopyrimidine-5-boronic acid) in solution. In situ generated non-linear and linear emissions are used to monitor CQDs formation which results in enhanced second harmonic generation, two photon absorption (2PA), and linear fluorescence; implying triple mode emission. These CQDs present blue, green, and possible red color rendering which are mostly independent to the respective excitation wavelengths (λ) with large stokes shift of 100 nm. Solid-state photoluminescence with QY of 46% is achieved by incorporating CQDs into thin transparent nanoporous silica (pSiO₂) films (thickness 50 µm) to form a CQDs-pSiO₂ composite which exhibits reverse saturable absorption at λ = 800 nm with 2PA coefficient and excited state absorption cross-section of 4.94 × 10⁻¹⁰ m W⁻¹ and 6.23 × 10⁻¹⁷ cm², respectively. CQDs-pSiO₂ is also sensitive to glucose concentration down to 1.0 mg dL⁻¹ in a wide linear range up to 100 mg dL⁻¹. This work therefore demonstrates facile, controllable, and up-scalable bottom-up fabrication of CQDs forming multifunctional solid-state CQDs-pSiO₂ with proven application in optical limiting and glucose sensing.     

Gas temperature measurements using widely tunable long-wavelength VCSEL

A method for gas temperature measurements with a widely tunable laser diode is presented. The method involves rapidly switching the laser frequency between two distantly spaced absorption lines chosen for optical thermometry. Direct absorption spectroscopy using a single-mode VCSEL was employed to probe the R10 and R22 lines of the 2ν₁+2ν₂ ⁰+ν₃ combination band of CO₂ near 6355.9 and 6363.7 cm^-1 sequentially. A specially designed 0.5-m cryogenic gas cell was filled with 10 mbar CO₂ at room temperature and cooled to 150 K with liquid N₂. The VCSEL was modulated with a 10-kHz ramp superimposed on a 1-kHz square waveform to scan two 0.04 cm^-1 intervals sequentially. The gas temperatures obtained with the VCSEL in the 150–300 K range are in a good agreement with those derived from gas pressure ratios. The maximum relative error of temperature measurements using the VCSEL was ± 3%. A compact VCSEL-based sensor can be developed for gas temperature and concentration measurements in the Martian atmosphere. The method proposed can be used for many applications including in situ monitoring of combustion processes. PACS 42.62.Fi; 42.55.Px; 39.30.+w     

Thermal and optical properties of Tm<Superscript>3+</Superscript>:NaLa(WO<Subscript>4</Subscript>)<Subscript>2</Subscript> crystal

A Tm³⁺-doped NaLa(WO₄)₂ single crystal with a dimension of Φ20 mm×40 mm was grown by the Czochralski method. Anisotropic thermal expansion coefficients of this crystal were investigated. Polarized absorption spectra, emission spectra and decay curve were recorded at room temperature. The absorption and emission cross-section were presented. Based on the Judd–Ofelt analysis, we obtained the three intensity parameters: Ω₂=10.21×10^-20, Ω₄=2.66×10^-20, and Ω₆=1.46×10^-20 cm². The radiative probabilities, radiative lifetimes, and branch ratios of Tm³⁺:NaLa(WO₄)₂ were calculated, too. Luminescence lifetime of the ³ H ₄ level was measured to be 220 μs. The stimulated emission cross-section for the ³ F ₄→³ H ₆ transition were determined using the reciprocity method, potential laser gain for this transition were also investigated, the gain curves implied that the tunable range is up to 200 nm. PACS 42.70.Hj; 78.20.-e     

An optical system for measuring nitric oxide using spectral separation techniques

An optical sensor based on differential absorption spectroscopy for real-time monitoring of industrial nitric oxide (NO) gas emission is described. The influence of gas absorption interference from sulfur dioxide (SO₂) in the environment was considered and a spectral separation technique was developed in order to eliminate this interference effect. The absorption spectrum of SO₂ around 226 nm was evaluated by the SO₂ concentration obtained using the experimentally recorded absorption spectrum around 300 nm. The absorption spectrum of NO around 226 nm was obtained by subtracting the absorption of SO₂ from the integral absorption spectrum of SO₂ and NO. The concentration measurements were performed at atmospheric pressure. The technique was found to have a lower detection limit of 0.8 ppm for NO per meter path length (SNR=2) and be immune from the influence from SO₂ on the NO measurement. The sensor based on this technique was successfully employed for in situ measurement of SO₂ and NO concentrations in the flue gas emitted from an industrial coal-fired boiler.     

CH4/air/SO2 premixed flame spectroscopy with a 7.5-μm diode laser

As sulfur dioxide (SO₂) is often involved in combustion processes, we present here SO₂-concentration measurements in the post-flame region of a CH₄/air/SO₂ premixed flame. SO₂ concentrations were deduced from high-resolution absorption spectra recorded with a mid-infrared tunable diode-laser (TDL) source operating at liquid nitrogen temperature. Single-mode, continuous frequency tuning around 1384.5 cm^-1 (or 7.5 μm) is achieved by a fine TDL temperature ramp. These experiments lead us to develop in situ combustion-pollutant measurements with compact apparatus. We show that this non-intrusive method is efficient for detection and allows the retrieval of SO₂ concentration and temperature. Received: 19 February 2001 / Revised version: 18 April 2001 / Published online: 7 June 2001     

Absorption saturation properties and laser Q-switch performance of Cr<Superscript>5+</Superscript>-doped YVO<Subscript>4</Subscript> crystal

The ground-state and excited-state absorption cross sections of a Cr⁵⁺:YVO₄ single crystal were determined by the intensity-dependant transmission measurements to be(2.0±0.4)×10^-18 cm² and less than 0.1×10^-18 cm² at 1.08 μm, respectively. The bleaching relaxation time of the Cr⁵⁺:YVO₄ crystal was estimated to be 3.5±1.5 ns. Passive Q-switching of a diode-pumped Yb³⁺:YVO₄ laser with the Cr⁵⁺:YVO₄ saturable absorber was realized. PACS 42.55.Xi; 42.60.Gd; 42.70.Hj