InGaAsSb／AIGaAsSb长波长多量子阱激光器有源区的优化设计

系统地研究了波长为2．7μm的InGaAsSb／AlGaAsSb多量子阱激光器中有源区的优化设计，分别用含应变势的6带KP模型和抛物带模型计算价带和导带的能带结构，并得到薛定谔方程和泊松方程的自洽解，由此计算量子阱在载流子注入时的增益谱，研究表明制约量子阱增益的主要因素不是跃迁矩阵元，而是粒子数反转程度，尤其是空穴填充HHl子带的概率，增加压应变或减小阱宽都会提高量子阱增益，前者降低了价带HHl子带空穴的平面内有效质量；后者拉大了价带子带间距，尽管它同时略微增加了空穴有效质量，这两种因素都导致价带顶空穴态密度的降低，提高了空穴在HHl子带的填充概率，最终提高了量子阱的增益，所得结论与已有的实验报道相符。     

InGaAsSb/AlGaAsSb长波长多量子阱激光器有源区的优化设计

系统地研究了波长为2.7μm的InGaAsSb/AlGaAsSb多量子阱激光器中有源区的优化设计.分别用含应变势的6带KP模型和抛物带模型计算价带和导带的能带结构，并得到薛定谔方程和泊松方程的自洽解，由此计算量子阱在载流子注入时的增益谱.研究表明制约量子阱增益的主要因素不是跃迁矩阵元，而是粒子数反转程度，尤其是空穴填充HH1子带的概率.增加压应变或减小阱宽都会提高量子阱增益.前者降低了价带HH1子带空穴的平面内有效质量；后者拉大了价带子带间距，尽管它同时略微增加了空穴有效质量.这两种因素都导致价带顶空穴态     

近800nm波长张应变GaAsP/A1GaAs量子阱激光器有源区的设计

张应变GaAs_(1-x)P_x量子阱是高性能大功率半导体激光器的核心有源区,基于能带结构分析优化其结构参数具有重要的应用指导意义.首先,基于6×6 Luttinger-Kohn模型,采用有限差分法计算了张应变GaAs_(1-x)P_x量子阱的能带结构,得到了第一子带间跃迁波长固定为近800 nm时的阱宽-阱组分关系,即随着阱组分x的增加,需同时增大阱宽,且阱宽较大时靠近价带顶的是轻空穴第一子带lh_1,阱宽较小时靠近价带顶的是重空穴第一子带hh_1.计算并分析了导带第一子带c_1到价带子带lh_1和hh_1的跃迁动量矩阵元.针对808 nm量子阱激光器,模拟计算了阈值增益与阱宽的关系,得到大阱宽有利于横磁模激射,小阱宽有利于横电模激射.进一步考虑了自发辐射和俄歇复合之后,模拟计算了808 nm量子阱激光器的阱宽与阈值电流密度的关系,阱宽较大时载流子对高能级子带的填充使得阈值电流密度增加,而阱宽较小时则是低的有源区光限制因子导致阈值电流密度升高,因此存在一最佳的阱宽-阱组分组合,可使阈值电流密度达到最小.本文的模拟结果可对张应变GaAs_(1-x)P_x量子阱激光器的理论分析和结构设计提供理论指导.     

近800 nm波长张应变GaAsP/AlGaAs量子阱激光器有源区的设计

张应变GaAs_1-xP_x量子阱是高性能大功率半导体激光器的核心有源区,基于能带结构分析优化其结构参数具有重要的应用指导意义.首先,基于6×6 Luttinger-Kohn模型,采用有限差分法计算了张应变GaAs_1-xP_x量子阱的能带结构,得到了第一子带间跃迁波长固定为近800 nm时的阱宽-阱组分关系,即随着阱组分x的增加,需同时增大阱宽,且阱宽较大时靠近价带顶的是轻空穴第一子带lh₁,阱宽较小时靠近价带顶的是重空穴第一子带hh₁.计算并分析了导带第一子带c₁到价带子带lh₁和hh₁的跃迁动量矩阵元.针对808 nm量子阱激光器,模拟计算了阈值增益与阱宽的关系,得到大阱宽有利于横磁模激射,小阱宽有利于横电模激射.进一步考虑了自发辐射和俄歇复合之后,模拟计算了808 nm量子阱激光器的阱宽与阈值电流密度的关系,阱宽较大时载流子对高能级子带的填充使得阈值电流密度增加,而阱宽较小时则是低的有源区光限制因子导致阈值电流密度升高,因此存在一最佳的阱宽-阱组分组合,可使阈值电流密度达到最小.本文的模拟结果可对张应变GaAs_1-xP_x量子阱激光器的理论分析和结构设计提供理论指导.     

外电场下应变量子阱中电子与空穴的本征态

考虑自发与压电极化引起的内建电场,自由电子-空穴气屏蔽效应和外加电场,基于常微分数值计算,自洽求解电子与空穴的薛定谔方程和泊松方程以获得基态能级。以典型的GaN/A lxGa1-xN纤锌矿氮化物应变量子阱为例,通过数值求解,得到电子与空穴的本征基态能和相应本征波函数。计算结果表明:沿量子阱生长方向所施加的外加电场将抵消阱中内建电场的作用,阱结构的弯曲程度略显平缓,使电子(空穴)本征波函数逆(顺)着外电场方向移动,且均向阱中心移动,波峰峰值增加,隧穿几率减小;在固定外电场情况下,电子与空穴基态能级随阱宽的增加而减小,随掺杂组分的增加而增加,表明外加电场对内建电场有所削弱以及量子限制作用对电子(空穴)基态能有显著的影响。     

固定波长应变量子阱的设计与比较

针对lnGaAsP材料,我们比较了不同应变与阱宽组合的固定波长应变量子阱特性.压应变下量子阱的应变量越大,阱宽越窄,其能带结构越理想.张应变下主要由于电子与轻空穴的偶极矩阵元比电子与重空穴的大,以及其较大的态密度,使得张应变量子阱的微分增益比压应变和匹配量子阱的大得多.如果固定的张应变量只能使第一子带为LH,第二子带为HH,则存在一个最优的阱宽,阱宽太小不能消除LHI与HH2的耦合,阱宽太大又会带来LH3与HH2的耦合,同样会有不利影响.     

InAs/AlSb/GaSb量子阱中的双色光吸收

为了降低噪声对InAs/GaSb量子阱作为双色电探测器性能的影响,设计性能优良的光电探测器,在InAs/GaSb量子阱中加入AlSb夹层,以减少电子和空穴在界面处的复合,从而抑制由于电子和空穴复合引起的噪声。首先应用转移矩阵方法求解薛定谔方程得到量子阱中电子和空穴的能级和波函数,研究AlSb夹层对电子和空穴波函数的影响。应用平衡方程方法求解外加光场条件下的玻尔兹曼方程,研究所有电子和空穴跃迁通道对光吸收系数的贡献,重点研究了AlSb夹层厚度对光吸收系数的影响。结果表明:基于In As/GaSb的量子阱体系可以实现双色光吸收,加入AlSb夹层可以有效抑制电子和空穴在界面处的隧穿,从而降低复合噪声,同时AlSb夹层的加入也对吸收峰有影响。AlSb夹层的厚度达到2 nm即可有效降低电子和空穴复合噪声,双色光吸收峰在中远红外波段,为该量子阱作为性能良好的中远红外光电探测器提供理论支撑。     

固定波长应变量子阱的设计与比较

针对ｌｎＧａＡｓＰ材料，我们比较了不同应变与阱宽组合的固定波长应变量子阱特性压应变下量子阱的应变量越大，阱宽越窄，其能带结构越理想张应变下主要由于电子与轻空穴的偶极矩阵元比电子与重空穴的大，以及其较大的态密度，使得张应变量子阱的微分增益比压应变和匹配量子阱的大得多如果固定的张应变量只能使第一子带为ＬＨ，第二子带为ＨＨ，则存在一个最优的阱宽，阱宽太小不能消除ＬＨＩ与ＨＨ２的耦合，阱宽太大又会带来ＬＨ３与ＨＨ２的耦合，同样会有不利影响     

δ-掺杂受主的扩散对GaAs/AlAs量子阱子带的影响（英文）

在15 nm GaAs/5 nm AlAs单量子阱的GaAs阱层中间,分别进行不同浓度剂量的铍受主的δ-掺杂。铍受主在量子阱层中的扩散浓度分布,由扩散方程数值解出。高温下扩散在GaAs阱层中的Be受主将发生电离,成为带负电荷的受主离子,同时也向量子阱价带的子带中引入空穴。带负电荷的扩散受主离子和价带子带中的空穴,它们都是带电粒子在GaAs阱层中按库伦定律激发电场。相比较而言,对于无掺杂同结构量子阱,在空穴的薛定谔中增加了一个额外的微扰势,从而使无掺杂的量子阱价带的子带有所改变。在有效质量和包络函数近似下,通过循环迭代方法,数值求解了既满足薛定谔方程又满足泊松方程的空穴波函数,找出了自洽、收敛的空穴子带的能量本征值。计算发现考虑到这种额外微扰势,重空穴基态子带hh的能量有一个电子伏特变化,并且随着掺杂受主剂量的增加,重空穴基态子带hh向着价带顶红移,计算结果与实验测量符合得很好。     

导纳谱研究两类Si基量子阱基态子能级的性质

用导纳谱技术研究了两类Si基量子阱样品基态子能级的性质.基于量子阱中载流子的热激发模型，从导纳谱中得到的激发能值被认为是阱中重空穴基态位置到阱顶的距离.对于SiGe合金和Si形成的组分量子阱，主要研究了退火对重空穴基态子能级的影响.发现样品的退火温度为800℃时，随退火时间延长，激发能增加.对此现象的解释是，由于Si,Ge互扩散，导致界面展宽，量子限制效应降低，重空穴基态位置下降，从而激发能增加.900℃下退火，由于扩散系数增大和应变弛豫加强，激发能值单调下降，量子限制效应引起的变化被掩盖.对于B高浓度超 关键词：     

Electron–hole transition in a spherical quantum dot confined at the center of a cylindrical nano-wire: Comparison of isotropic and anisotropic effective mass

Electronic structure of an InAs spherical quantum dot placed at the center of a GaAs cylindrical nano-wire is investigated. The Schrodinger equation within the effective mass approximation is solved and the energy eigenvalues and transition energies are calculated as a function of quantum dot and nano-wire radii using the finite element method. The two types of heavy holes, hhI and hhII, with isotropic and anisotropic effective masses are considered, respectively. The effect of spherical and nano-wire confining potentials, the size of the dot and the nano-wire on ground and first excited state energies of the electron, heavy hole I and heavy hole II are investigated. The results show that the electron and heavy holes energies decrease as the dot and the nano-wire radii increase. The emitted wavelength of transitions between el-hhI and el-hhII are also calculated and compared. The results show that the anisotropy of the effective mass has great effect on the emitted wavelength.     

Thermodynamical quantities around a RNAdS black hole

The entropy density, energy density, pressure and equation of state around the RNAdS black hole are calculated in the WKB approximation on the Teukolsky-type master equation. The appearance of spin-dependent terms is demonstrated. The existence of these terms shows that the black hole radiation is not exactly thermal radiation and the black hole entropy is not strictly proportional to the area of the event horizon.     

Pressure-induced interband optical transitions in an InAs0.8P0.2/InP quantum wire

Hydrostatic pressure-induced exciton binding energy in an InAs_0.8P_0.2/InP quantum well wire is investigated taking into account the geometrical confinement effect. Numerical calculations are carried out using variational approach within the single-band effective-mass approximation. The compressive strain contribution to the confinement potential is included throughout the calculations. The energy difference of the ground and the first excited state is found with the consideration of spatial confinement effect in the influence of pressure. The second-order susceptibility of harmonic generation is carried out using the compact density method. The optical gain as a function of incident photon energy is computed in the presence of the hydrostatic pressure. The result shows that the range of wavelength for the potential applications of telecommunications (1.3–1.55 μm) can be obtained by the application of the hydrostatic pressure. We believe that the obtained results can be applied for tuning the ranges of fibre optical wavelength in telecommunications.     

空气中激光等离子通道的演变和控制

为精确再现超强飞秒脉冲激光在大气中的传输特性,有效控制激光诱导等离子体通道的性能参数,基于扩展的非线性薛定谔方程,研究了空气中产生的等离子通道的演变过程。该模型在考虑衍射、色散和多光子效应的基础上,引入了拉曼散射、等离子体尾波场和相对论自聚焦等多种效应。讨论了电子密度和光强通量的空间分布特性,运用分步傅里叶法和有限差分法得到了电子密度和光强通量的分布,仿真结果显示,激光波长、单脉冲能量、脉宽和束腰半径等初始参数的变化将对等离子体通道的演变产生显著影响,为超短脉冲强激光在大气中成丝位置和形态控制提供了可能的途径。     

On the Eigenvalues of the Fermionic Angular Eigenfunctions in the Kerr Metric

In view of a result recently published in the context of the deformation theory of linear Hamiltonian systems, we reconsider the eigenvalue problem associated with the angular equation arising after the separation of the Dirac equation in the Kerr metric, and we show how a quasilinear first order PDE for the angular eigenvalues can be derived efficiently. We also prove that it is not possible to obtain an ordinary differential equation for the eigenvalues when the role of the independent variable is played by the particle energy or the black hole mass. Finally, we construct new perturbative expansions for the eigenvalues in the Kerr case and obtain an asymptotic formula for the eigenvalues in the case of a Kerr naked singularity.     

广义非线性薛定谔方程描述的波坍缩及其演变

介绍了广义非线性薛定谔方程, 并且运用分步傅里叶方法进行了数值求解. 在外部势场一定的情况下, 给定系统一个小的初始扰动, 讨论了广义非线性薛定谔方程中复系数p, q 对波场演变过程的影响. 通过数值研究发现波场会相继出现调制不稳定性、波坍缩、逆级联以及整个空间的湍流现象. 而当改变非线性频移系数的量级时, 数值研究发现在波坍缩之后出现了逆级联, 最终系统的能量主要凝聚在3个不同波矢终端的附近区域.     

涂覆石墨烯的椭圆形电介质纳米线光波导的模式特性分析

设计了一种涂覆石墨烯的椭圆形电介质纳米线光波导.采用分离变量法,在椭圆柱坐标系中,借助Mathieu函数,得到了色散方程.通过数值求解色散方程,可以得到模式的有效折射率和场分布,从而得到模式的传播长度.研究了工作波长、结构参数以及石墨烯的费米能对模式特性的影响,并给出了前五个模式的品质因数.计算表明,当波长从4.3μm增加到8.8μm,这5个模式的有效折射率的实部减小,基模和一阶模的传播长度增大,二阶模的传播长度先增大后减小.当改变纳米线结构参数半长轴和半短轴时,对基模和一阶模的模式特性影响较小,对二阶模的模式特性影响较大.当石墨烯的费米能从0.45 eV增加到0.72 eV时,有效折射率的实部减小,传播长度可以达到2μm左右.分离变量法得到的结果与有限元方法得到的结果完全一致.本文工作可以为基于涂覆石墨烯的电介质纳米线的光波导的设计、制作和应用提供理论基础.     

Evolution of hole depth and shape in ultrashort pulse deep drilling in silicon

We report on the temporal evolution of the percussion drilling process in deep laser drilling. Ultrashort laser pulses at 1030 nm and a duration of 8 ps were used to machine silicon while simultaneously imaging the silhouette of the hole using an illumination wavelength above the band edge. We investigate the influence of the processing parameters fluence and pulse energy on the depth and shape of the hole demonstrating different phases of the drilling process. In the first phase, a tapered hole is formed with highly reproducible shape and depth. In the following, the evolution of the hole shape is irregular and imperfections like bulges, changes of the drilling direction and the formation of multiple hole ends occur. In the final phase, the maximum depth stays constant while the volume still increases due to enlargement of the hole diameter and the possible formation of multiple hole ends. Deviations from the ideal hole shape occur primarily in the lower part of the hole. Their extent can be reduced by increasing the amount of applied pulse energy. Moreover, the pulse energy is chiefly determining the maximum achievable hole depth, which is largely independent of the focusing conditions and corresponding fluence.     

Evolution of Bouncing Cosmological Models Due to the Self-Gravitational Corrections

A four-dimensional timelike brane with non-zero energy density is considered as the boundary of a five dimensional Schwarzschild anti de Sitter bulk background. The self-gravitational corrections to the first Friedmann equation act as a source of stiff matter contrary to standard FRW cosmology where the charge of the black hole plays this role. In a previous related paper (Setare in Eur. Phys. J. C 47:851, [2006]), bouncing cosmology was studied, from a holographic perspective, for the very special case of a brane that is void of any intrinsic matter sources. In this paper we extend the results of (Setare in Eur. Phys. J. C 47:851, [2006]). We consider the physically relevant case in which a perfect fluid with equation of state of radiation is present on the brane. Then, we describe solutions of the braneworld theory under investigation and also determine their stability. Specifically, if we do not consider the self-gravitational corrections, the AdS black hole with zero ADM mass, and open horizon is an attractor, while, if we consider, the AdS black hole with zero ADM mass and flat horizon, and D3-brane with non-zero energy density is a repeller.     

All-Fiber Ultra-Fast Switching Using Stimulated Raman Scattering

We propose a method for all-fiber ultra-fast switching using stimulated Raman scattering. It is based on the transference of energy from the signal as pump to the control signal as first Stokes by stimulated Raman scattering. In the absence of a control signal, the transference of energy from the pump signal to the generated first Stokes is negligible, which results in high output power at the pump signal wavelength. To minimize the walk-off problem between two wavelengths, we chose pump signal and control signal to be equally spaced on opposite sides of the zero dispersion wavelength of the fiber. Based on this assumption, the all-fiber ultra-fast optical switch with low power consumption and high output extinction ratio can be realized.