Properties study of ZnO:Ga crystal on pulsed radiation detections

In this paper, properties on pulsed radiation detections of ZnO:Ga crystal grew by a magnetron sputtering method were studied. The time response to pulsed laser,pulsed hard X rays and single α particles, the energy response to pulsed hard X ray, the scintillation efficiency to γ rays, the response to pulsed proton, and the relations of the light intensity varied with the proton energy were measured and analyzed in detail. Results show that the ZnO:Ga crystal has potential applications in the regime of pulse radiation detection .     

ZnO:Ga晶体对硬X射线的时间及能量响应

 介绍了ZnO:Ga晶体对重复频率快脉冲硬X 射线的时间响应,利用X射线荧光分析仪测量了ZnO:Ga晶体对10～100 keV硬X射线的能量响应。结果表明:ZnO:Ga晶体对硬X射线响应的上升时间为316 ps,半高宽为440 ps;对40 keV以上的X射线的能量响应很平坦。该晶体可以作为一种新颖的硬X射线探测元件。     

Timing performance of ZnO:Ga nanopowder composite scintillators

The implementation of nanocrystal‐based composite scintillators as a new generation of ultrafast particle detectors is explored using ZnO:Ga nanopowder. Samples are characterized with a spectral‐time resolved photon counting system and pulsed X‐rays, followed by coincidence time resolution (CTR) measurements under 511 keV gamma excitation. Results are comparable to CTR values obtained using bulk inorganic scintillators. Bringing the ZnO:Ga nanocrystal's timing performance to radiation detectors could pave the research path towards sub‐20 ps time resolution as shown in this contribution. However, an efficiency boost when placing nanopowders in a transparent host constitutes the main challenge in order to benefit from sub‐nanosecond recombination times. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Photoconductivity in metal-semiconductor-metal planar structures with ZnO:Ga and ZnO:Li films

Influence of UV radiation on photoelectric properties of ZnO:Ga and ZnO:Li films prepared by the electron-beam evaporation method was investigated. The photoconductivity was measured, using metal-semiconductor-metal planar structures where metallic aluminum was used as ohmic electrodes. The kinetics of rise and decay of the photoconductivity in these structures was studied. The change of photoconductivity under the action of UV radiation is considered as a result of the photoexcitation-relaxation into the conduction band and photochemical processes of absorption-desorption of oxygen at the film surface. The influence of a MgF₂ protective layer deposited on ZnO:Ga and ZnO:Li films was studied. Measurements of the spatial distribution of the potential between the anode and cathode for determination of the homogeneity of conductivity in the investigated planar structures were performed by the moving probe method.     

Experimental study on scintillation efficiency of ZnO:In to proton response

Film ZnO:In crystal is a good candidate for a scintillation recoil proton neutron detection system and the response of ZnO:In to protons is a crucial point. The energy response of ZnO:In to mono-energetic protons in the range of 10 keV-8 MeV was measured. The experiment was carried out in current mode, and Au foil scattering was employed, where the forward scattering protons were used for exciting the sample, and the backward scattering protons were used for monitoring the beam intensity. According to the result, the yield of light non-linearly depends on proton energy, and drops significantly when proton energy is low. The scintillation efficiency as a function of proton energy was obtained, which is very useful for researching the scintillation recoil proton neutron detection system.     

Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering

Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10⁻⁴ Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.     

Conductivity increase of ZnO:Ga films by rapid thermal annealing

Due to a constant increase in demands for transparent electronic devices the search for alternative transparent conducting oxides (TCO) is a major field of research now. New materials should be low-cost and have comparable or better optical and electrical characteristics in comparison to ITO. The use of n-type ZnO was proposed many years ago, but until now the best n-type dopant and its optimal concentration is still under discussion. Ga was proposed as the best dopant for ZnO due to similar atomic radius of Ga³⁺ compared to Zn²⁺ and its lower reactivity with oxygen. The resistivity ρ of ZnO:Ga/Si (100) films grown by PEMOCVD was found to be 3×10⁻² Ω cm. Rapid thermal annealing (RTA) was applied to increase the conductivity of ZnO:Ga (1 wt%) films and the optimal regime was determined to be 800  C in oxygen media for 35 s. The resistivity ratio before and after the annealing and the corresponding surface morphologies were investigated. The resistivity reduction () was observed after annealing at optimal regime and the final film resistivity was approximately ≈4×10⁻⁴ Ω cm, due to effective Ga dopant activation. The route mean square roughness (R_q) of the films was found to decrease with increasing annealing time and the grain size has been found to increase slightly for all annealed samples. These results allow us to prove that highly conductive ZnO films can be obtained by simple post-growth RTA in oxygen using only 1% of Ga precursor in the precursor mix.     

Transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering at low temperature

Ga-doped ZnO (ZnO:Ga) transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. The structural, electrical, and optical properties of ZnO:Ga films were investigated in a wide temperature range from room temperature up to 400 °C. The crystallinity and surface morphology of the films are strongly dependent on the growth temperatures, which in turn exert an influence on the electrical and optical properties of the ZnO:Ga films. The film deposited at 350 °C exhibited the relatively well crystallinity and the lowest resistivity of 3.4 × 10⁻⁴ Ω cm. More importantly, the low-resistance and high-transmittance ZnO:Ga films were also obtained at a low temperature of 150 °C by changing the sputtering powers, having acceptable properties for application as transparent conductive electrodes in LCDs and solar cells.     

掺Ga对ZnO电子态密度和光学性质的影响

采用密度泛函理论下的第一性原理平面波赝势方法,研究了掺Ga对纤锌矿ZnO电子态密度和光学性质的影响.从晶体配位场理论分析了掺Ga前后ZnO的成键情况及态密度的变化.计算得到掺Ga后电子浓度为2.42×10²¹ cm^-3,ZnO的载流子浓度提高了10⁴倍.比较分析掺Ga前后ZnO的介电函数、复折射率、吸收光谱和反射光谱可得,ZnO光吸收边向高能端移动,光学带隙增大.在可见光区,ZnO光吸收系数与反射率减小,光透过率显著提高,使ZnO:Ga成为 关键词： 密度泛函理论 态密度 光学性质 ZnO:Ga     

表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响

ZnO∶Ga(GZO)透明电极沉积在p-GaN表面,用作透明电流扩展层。直接沉积在p-GaN上的p-GaN/GZO存在较大的势垒,容易形成肖特基接触,而良好的欧姆接触对功率LED器件至关重要。为了降低接触势垒,采用盐酸和氢氧化钠溶液对GaN表面进行去氧化层处理,并对p-GaN/GZO进行退火处理,研究表面处理和退火对p-GaN/GZO接触特性的影响。研究表明:碱性溶液处理有利于降低接触势垒;退火处理后,接触势垒略有增加。     

脉冲辐射成像绝对测量方法研究

设计了一种高透过率、能量响应平坦的探测器, 利用该探测器将脉冲射线源图像与射线强度直接关联, 简化了图像诊断系统绝对测量的标定环节, 建立了脉冲辐射源图像诊断定量化的新技术方法. 实验表明, 由该方法得到的射线绝对强度的不确定度为33%. 关键词： 脉冲辐射成像 绝对测量 能量响应平坦     

Ga高掺杂对ZnO的最小光学带隙和吸收带边影响的第一性原理研究

采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法, 建立了纯的和四种不同Ga掺杂量的ZnO超胞模型, 分别对模型进行了几何结构优化、能带结构分布、态密度分布和吸收光谱的计算. 结果表明, 在本文限定的Ga掺杂量2.08 at%–6.25 at%的范围内, 随着Ga掺杂量的增加, 掺杂后的ZnO体系体积变化不是很大, 但是, 掺杂体系ZnO的能量增加, 掺杂体系变得越来越不稳定, 同时, 掺杂体系ZnO的Burstein-Moss 效应越显著, 最小光学带隙变得越宽, 吸收带边越向高能方向移动. 计算结果和实验结果相一致. 关键词： Ga高掺杂ZnO 电子结构 吸收光谱 第一性原理     

脉冲X射线辐射效应时间能量联合数值模拟

在脉冲X射线辐射效应研究中,需要将时间维度信息结合到仿真模型中,进而实现基于时间能量联合方法的辐射效应数值模拟,同时也为瞬态脉冲辐照效应的仿真提供了一种思路。建立轫致辐射打靶模型,计算出射脉冲X射线能谱,得到脉冲X射线的时间能量联合谱,结合辐射对象的辐射效应仿真模型,获得氧化铝陶瓷试样在不同时间及不同入射深度处的能量沉积。     

Si基沉积ZnO薄膜的光谱特性

利用同步辐射真空紫外光研究了Si基沉积ZnO薄膜的发射光谱、激发光谱及其湿度依赖。首次观测到高于ZnO禁带宽度的发射带（290nm)，并初步指定其来源。     

Preparation of ZnMgO:Ga thin films on flexible substrates by pulsed laser deposition

Transparent conducting ZnMgO:Ga films were deposited on flexible PET substrates by pulsed laser deposition (PLD). Effects of deposition pressure and time on the structural, electrical and optical properties of ZnMgO:Ga films were investigated. The films showed a low resistivity about 7.68 × 10⁻⁴ Ω cm when deposited at the pressure of 0.03 Pa for 40 min. All the films exhibited a high transmittance over 80% in the visible and near-ultraviolet region. The band gap of as-grown films was about 3.50 eV.     

Ga/N高共掺浓度对ZnO导电性能和红移影响的第一性原理研究

采用密度泛函理论框架下的第一性原理平面波超软赝势方法, 建立了未掺杂ZnO单胞和两种不同浓度的Ga/N高共掺ZnO超胞模型, 分别进行了几何结构优化、总态密度分布和能带分布的计算. 研究表明, ZnO高共掺Ga/N的条件下, Ga/N高共掺浓度越大, 导电性能越弱, 并且高掺杂后高能区红移效应显著, 计算得到的结果与实验结果的变化趋势一致. 关键词： Ga/N高共掺ZnO 电导率 红移 第一性原理     

Yb:YAG晶体性能实验测量

为了测量脉冲时间宽度小于20 ns时的射线时间分辨图像,发展了新型无机闪烁体Yb:YAG,并实验测量了晶体的发光衰减时间、X射线激发发光光谱、相对发光效率和空间分辨等性能,研究了Yb:YAG晶体的发光性能。实验表明,Yb:YAG发光有三种衰减成分,快成分衰减常数为1.2 ns,慢成分衰减常数与射线种类有关;X射线激发发光光谱在250~800 nm范围,有三个发光峰,分别为320,380和500 nm,且320 nm处强度最大;相对发光效率为1900 ph/MeV;使用钨分辨卡测得Yb: YAG空间分辨能力为2 lp/m,使用刀口法测得空间调制传递函数为0.5时的频率为0.7 lp/mm。结果说明Yb:YAG晶体性能能够满足所需测量要求。     

ZnO高掺杂Ga的浓度对导电性能和红移效应影响的第一性原理研究

采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法,在相同环境条件下建立了浓度不同的由Ga原子取代Zn原子的Zn_1-xGa_xO模型.对低温高掺杂Ga原子的Zn_1-xGa_xO半导体的能带结构、态密度和吸收光谱进行了计算.结果表明:Ga原子浓度越大,进入导带的相对电子数越多,但是电子迁移率反而减小.通过对掺杂和未掺杂ZnO的电导率以及最小间隙带宽度分别进行了比较 关键词： ZnO高掺杂Ga 电导率 红移 第一性原理     

XRD study on the effect of the deposition condition on pulsed laser deposition of ZnO films

Using a pulsed laser deposition (PLD) process on a ZnO target in an oxygen atmosphere, thin films of this material have been deposited on Si(111) substrates. An Nd: YAG pulsed laser with a wavelength of 1064 nm was used as the laser source. The influences of the deposition temperature, laser energy, annealing temperature and focus lens position on the crystallinity of ZnO films were analyzed by X-ray diffraction. The results show that the ZnO thin films obtained at the deposition temperature of 400°C and the laser energy of 250 mJ have the best crystalline quality in our experimental conditions. The ZnO thin films fabricated at substrate temperature 400°C were annealed at the temperatures from 400°C to 800°C in an atmosphere of N₂. The results show that crystalline quality has been improved by annealing, the optimum temperature being 600°C. The position of the focusing lens has a strong influence on pulsed laser deposition of the ZnO thin films and the optimum position is 59.5 cm from the target surface for optics with a focal length of 70 cm.      

Effects of post-annealing on the structural and nanomechanical properties of Ga-doped ZnO thin films deposited on glass substrate by rf-magnetron sputtering

In this study, the effects of post-annealing on the structure, surface morphology and nanomechanical properties of ZnO thin films doped with a nominal concentration of 3 at.% Ga (ZnO:Ga) are investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) and nanoindentation techniques. The ZnO:Ga thin films were deposited on the glass substrates at room temperature by radio frequency magnetron sputtering. Results revealed that the as-deposited ZnO:Ga thin films were polycrystalline albeit the low deposition temperature. Post-annealing carried out at 300, 400 and 500 °C, respectively, has resulted in progressive increase in both the average grain size and the surface roughness of the ZnO:Ga thin film, in addition to the improved thin films crystallinity. Moreover, the hardness and Young's modulus of ZnO:Ga thin films are measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) option. The hardness and Young's modulus of ZnO:Ga thin films increased as the annealing temperature increased from 300 to 500 °C, with the best results being obtained at 500 °C.