Dielectronic recombination and related resonance processes

We review recent progress in understanding of the atomic process known as dielectronic recombination (DR). Currently applied schemes for the calculation of DR cross sections and rate coefficients are described in detail. Methods of dealing with such problems as cascade correction, configuration interaction, and angular momentum coupling are considered. Both two-electron and multi-electron systems are treated. Results obtained by these methods are presented for ions of the He, Li, B, F, Na, Mg, and K isoelectronic sequences. Other results are referenced. Semiempirical formulas for DR rate coefficients are discussed. The recently discovered electric field effect in DR is described. The connection to DR of other resonance processes such as photo-Auger ionization, resonance transfer excitation, and resonance excitation is explained.     

Dielectronic recombination of Co-like tantalum

Ab initio calculation of the total dielectronic recombination (DR) rate coefficient from the ground state of Co-like tantalum is performed using the relativistic distorted-wave approximation with configuration interaction. The contributions to the total DR rate coefficients are explicitly calculated from the complexes of Ni-like tantalum: 3s²3p⁶3d_3/2³ 3d_5/2⁶ n'l', 3s²3p⁵3d¹⁰n'l', 3s3p⁶3d¹⁰n'l', 3s²3p⁶3d⁸4ln'l', 3s²3p⁵3d⁹4ln'l' and 3s3p⁶3d⁹4ln'l' with n' ≤ 25, and 3s²3p⁶3d⁸5ln'l' with n' ≤ 9. The l' and n' dependences of partial DR rate coefficients are investigated. The contributions from higher n'complexes are evaluated by a level-by-level extrapolation method. The total DR rate coefficients mainly come from the complex series 3s²3p⁶3d⁸4ln'l', 3s²3p⁵3d⁹4ln'l' and are fitted to an empirical formula with high accuracy. Comparison of the present results with those of other works shows that the previously published data underestimate significantly the DR rates of Co-like tantalum.     

类氖氙离子LMn双电子复合模拟谱

在双电子复合过程发生的能量范围内,发射X光子的原子过程除双电子复合过程外还有辐射复合、共振激发、共振复合以及直接激发原子过程.本文使用相对论组态相互作用方法计算了这些过程的截面,比较了在双电子复合过程发生的能量范围内这些原子过程的截面与双电子复合过程截面,探讨了这些过程对双电子复合过程的影响.研究结果表明,辐射复合截面随入射电子束能量的增大迅速减小,在双电子复合能量范围内几乎为一常数,可以作为本底来处理;共振激发和共振复合过程对双电子复合过程的影响可以忽略不计;当入射电子束能量高于靶离子的第一激发能时,电子碰撞直接激发截面与高Rydberg态的截面连成一片,随着入射电子束能量的增加,电子碰撞直接激发截面越来越大,这时必须考虑直接激发过程.使用相对论组态相互作用方法计算了类氖氙离子的双电子复合截面,其结果与已有的部分实验和理论结果很吻合.     

类氖氙离子LMn双电子复合模拟谱

在双电子复合过程发生的能量范围内,发射X光子的原子过程除双电子复合过程外还有辐射复合、共振激发、共振复合以及直接激发原子过程. 本文使用相对论组态相互作用方法计算了这些过程的截面,比较了在双电子复合过程发生的能量范围内这些原子过程的截面与双电子复合过程截面,探讨了这些过程对双电子复合过程的影响. 研究结果表明,辐射复合截面随入射电子束能量的增大迅速减小,在双电子复合能量范围内几乎为一常数,可以作为本底来处理;共振激发和共振复合过程对双电子复合过程的影响可以忽略不计;当入射电子束能量高于靶离子的第一激发能时,电子碰撞直接激发截面与高Rydberg态的截面连成一片,随着入射电子束能量的增加,电子碰撞直接激发截面越来越大,这时必须考虑直接激发过程. 使用相对论组态相互作用方法计算了类氖氙离子的双电子复合截面,其结果与已有的部分实验和理论结果很吻合.     

Dielectronic recombination rate for the Be-sequence

The dielectronic recombination (DR) rate coefficient α^DR is explicitly calculated for the Mo, Fe, Ar, and Ox target ions of the Be-sequence with four electrons, in the isolated resonance approximation. This work extends the previous study of the Mo³⁸⁺ ions at 1.4, 2.8, and 5.6 keV electron temperatures. Both Δn≠0 and Δn = 0 transitions are considered in detail. The Δn≠0 contribution still dominates, but the Δn = 0 effect becomes quite large for heavy ions. An explicit LS coupling scheme is employed throughout for the dominant transitions calculated here, and contributions from many other intermediate states and cascade transitions are included by comparing the dominant contribution with the more complete Mo³⁸⁺ case and proportionately scaling their effect. Nonrelativistic Hartree-Fock wave functions are used in the evaluation of the Auger and radiative amplitudes, and the continuum wave functions are calculated using the Hartree-Fock direct potential and explicit nonlocal exchange potential. The scaling property of α^DR and its breakdown are examined, and an improved form of the phenomenological formula is proposed.     

Dielectronic recombination rates for the Be sequence

The dielectronic recombination (DR) rate coefficients have been recalculated for the C, Ar, and Fe target ions of the Be-sequence with an improved estimate of the high Rydberg state contribution. The Δn = 0 excitation-capture mode is reexamined in an improved LS coupling scheme and the effect of configuration interaction in the target and in the final (stably, bound) states is considered. The contribution of the 1s (Δn_t ≠ 0) excitation mode is also estimated and found to be on the order of 5% of the total DR capture rate at high electron temperatures. This updates and supersedes our earlier results for this isoelectronic sequence.     

氙激光等离子体的双电子复合过程研究(英文)

在自旋-轨道劈裂阵模型下,通过类铜的内壳层激发组态计算了类镍氙的双电子复合速率系数,其中考虑了共振和非共振辐射平衡跃迁对自电离能级的影响,而忽略了因碰撞跃迁引起的电子俘获,非共振辐射平衡跃迁在低电子温度条件下主要影响双电子复合过程;本文讨论了双电子复合系数及双电子伴线强度比随电子温度的变化.     

Dielectronic recombination rate coefficients of Ni-like barium and tungsten

Ab initio calculations of the total dielectronic recombination (DR) rate coefficient of Ni-like barium () and tungsten () in the ground state have been performed using the HULLAC atomic code package. Resonant and nonresonant stabilizing radiative transitions are included. Collisional transitions following electron capture are neglected. The present level-by-level calculations include the DR contributions of all of the levels (over 17000) in the Cu-like inner-shell excited configurations 3d ⁹ 4ln'l' (), 3p ⁵ 3d ¹⁰ 4ln'l' (), and 3s3p ⁶ 3d ¹⁰ 4ln'l' (). For both ions, the configuration complexes with a hole in the 3p inner shell contribute almost 10% to the total DR rate coefficient, while the complexes with a hole in the 3s inner shell contribute about 1%. The converging contributions of the 3d ⁹ 4ln'l' (n' > 9) configurations are evaluated by applying the complex-by-complex extrapolation method and are found to comprise up to about 20% of the total DR rate coefficients throughout a wide electron temperature range. The total DR rate coefficients are fitted to an easy-to-use analytic expression which reproduces the original data with an accuracy of about 2% or better in a very wide temperature range. Received: 1 February 1999     

Dielectronic recombination rate coefficients for hydrogen-like ions

We present rate coefficients for dielectronic recombination for 9 hydrogen-like ions ranging from Ne⁹⁺ to Xe⁵³⁺. In this work, relativistic multi-configuration wavefunctions are used to calculate energy levels as well as the Auger and radiative matrix elements. Results are compared with recent calculations for ions in the helium-like sequence.     

Gd激光等离子体的双电子复合过程研究

在自旋-轨道劈裂阵模型下,通过类铜的内壳层激发组态计算了类镍Gd的双电子复合速率系数,其中考虑了共振和非共振辐射平衡跃迁对自电离能级的影响,而忽略了因碰撞跃迁引起的电子俘获,非共振辐射平衡跃迁在低电子温度条件下主要影响双电子复合过程;本文讨论了双电子复合系数及双电子伴线强度比随电子温度的变化.     

高Z等离子体中的双电子复合与电子碰撞激发

采用准相对论性Hartree-Fock-Relativistic方法与不可分辨跃迁组模型相结合,对Au和Ta元素的类Ni离子的双电子复合速率,以及Au元素类Cu离子的电子碰撞激发速率进行了计算。计算结果表明,对于Au类Ni离子的3d10-3d94l5f-3d104l双电子复合过程以及类Cu离子的3d104l-3d94l5f电子碰撞激发过程,当电子温度高于1.0 keV时,电子离子碰撞激发速率随电子温度增加而增加,双电子复合速率随电子温度增加而减小,并且电子碰撞激发对谱线辐射的贡献要比双电子复合大得多。     

高Z等离子体中的双电子复合与电子碰撞激发

 采用准相对论性Hartree-Fock-Relativistic方法与不可分辨跃迁组模型相结合,对Au和Ta元素的类Ni离子的双电子复合速率,以及Au元素类Cu离子的电子碰撞激发速率进行了计算。计算结果表明,对于Au类Ni离子的3d¹⁰-3d⁹4l5f-3d¹⁰4l双电子复合过程以及类Cu离子的3d¹⁰4l-3d⁹4l5f电子碰撞激发过程,当电子温度高于1.0 keV时,电子离子碰撞激发速率随电子温度增加而增加,双电子复合速率随电子温度增加而减小,并且电子碰撞激发对谱线辐射的贡献要比双电子复合大得多。     

Dielectronic recombination of lithium-like gold: Towards QED tests

Dielectronic recombination (DR) and radiative recombination (RR) of lithium-like gold in the energy range of 0 to 225 eV have been studied at the Experimental Storage Ring (ESR) of the GSI in Darmstadt. Main objective of the measurements is the precise determination of the 2s_1/2−2p_1/2 energy splitting as an additional QED test. This novel method, developed at the ESR [1], is based on the extrapolation of a multitude of measured resonances Au⁷⁵⁺ (1s²2p_1/2 nl_j) up to the series limit (n = ∞). Furthermore experimental data for the Au⁷⁵⁺ (1s²2p_3/26l_j) resonance manifold are presented. This revised version was published online in July 2006 with corrections to the Cover Date.     

类镍钆(Gd36+)离子的双电子复合系数研究

 在自旋轨道劈裂阵模型下,通过类铜组态理论计算出类镍Gd³⁶⁺的双电子复合速率系数,得出其在电子温度 0.02~5keV 范围内的变化规律,并分析了影响双电子复合速率系数的主要因素是相应的自电离系数和离化势,这为等离子体的诊断提供了一种新的方法。     

Dielectronic recombination and resonant transfer excitation processes for helium-like krypton

The relativistic configuration interaction method is employed to calculate the dielectronic recombination(DR) cross sections of helium-like krypton via the 1s2lnl ’(n = 2,3,...,15) resonances.Then,the resonant transfer excitation(RTE) processes of Kr 34+ colliding with H,He,H 2,and CH x(x = 0-4) targets are investigated under the impulse approximation.The needed Compton profiles of targets are obtained from the Hartree-Fock wave functions.The RTE cross sections are strongly dependent on DR resonant energies and strengths,and the electron momentum distributions of the target.For H 2 and H targets,the ratio of their RTE cross sections changes from 1.85 for the 1s2l2l ’ to 1.88 for other resonances,which demonstrates the weak molecular effects on the Compton profiles of H 2.For CH x(x = 0-4) targets,the main contribution to the RTE cross section comes from the carbon atom since carbon carries 6 electrons;as the number of hydrogen increases in CH x,the RTE cross section almost increases by the same value,displaying the strong separate atom character for the hydrogen.However,further comparison of the individual orbital contributions of C(2p,2s,1s) and CH 4(1t 2,2a 1,1a 1) to the RTE cross sections shows that the molecular effects induce differences of about 25.1%,19.9%,and 0.2% between 2p-1t 2,2s-2a 1,and 1s-1a 1 orbitals,respectively.