180–425 GHz low noise SIS waveguide receivers employing tuned Nb/AIOx/Nb tunnel junctions

We report recent results on a 20% reduced height 270–425 GHz SIS waveguide receiver employing a 0.49 µm² Nb/AlO _x /Nb tunnel junction. A 50% operating bandwidth is achieved by using a RF compensated junction mounted in a two-tuner reduced height waveguide mixer block. The junction uses an end-loaded tuning stub with two quarter-wave transformer sections. We demonstrate that the receiver can be tuned to give 0–2 dB of conversion gain and 50–80% quantum efficiency over parts of it's operating range. The measured instantaneous bandwidth of the receiver is 25 GHz which ensures virtually perfect double sideband mixer response. Best noise temperatures are typically obtained with a mixer conversion loss of 0.5 to 1.5 dB giving uncorrected receiver and mixer noise temperatures of 50K and 42K respectively at 300 and 400 GHz. The measured double sideband receiver noise temperature is less than 100K from 270 GHz to 425 GHz with a best value of 48K at 376 GHz, within a factor of five of the quantum limit. The 270–425 GHz receiver has a full 1 GHz IF passband and has been successfully installed at the Caltech Submillimeter Observatory in Hawaii. Preliminary tests of a similar junction design in a full height 230 GHz mixer block indicate large conversion gain and receiver noise temperatures below 50K DSB from 200–300 GHz. Best operation is again achieved with the mixer tuned for 0.5–1.5 dB conversion loss which at 258 GHz resulted in receiver and mixer noise temperature of 34K and 27K respectively.     

Effects of interface bound states on the shot noise in normal metal–low-dimensional Rashba semiconductor tunnel junctions with induced s-wave pairing potential

We consider the effects of interface bound states on the electrical shot noise in tunnel junctions formed between normal metals and one-dimensional(1 D) or two-dimensional(2 D) Rashba semiconductors with proximity-induced s-wave pairing potential. We investigate how the shot noise properties vary as the interface bound state is evolved from a non-zero energy bound state to a zero-energy bound state. We show that in both 1 D and 2 D tunnel junctions, the ratio of the noise power to the charge current in the vicinity of zero bias voltage may be enhanced significantly due to the induction of the midgap interface bound state. But as the interface bound state evolves from a non-zero energy bound state to a zero-energy bound state, this ratio tends to vanish completely at zero bias voltage in 1 D tunnel junctions, while in 2 D tunnel junctions it decreases smoothly to the usual classical Schottky value for the normal state. Some other important aspects of the shot noise properties in such tunnel junctions are also clarified.     

Properties of planar Nb/α-Si/Nb Josephson junctions with various degrees of doping of the α-Si layer

The properties of Nb/??-Si/Nb planar Josephson junctions with various degrees of doping of the amorphous silicon layer are experimentally studied. Tungsten is used as a doping impurity. The properties of the Josephson junctions are shown to change substantially when the degree of doping of the ??-Si layer changes: a current transport mechanism and the shape of the current-voltage characteristic of the junctions change. Josephson junctions with SNS-type conduction are formed in the case of a fully degenerate ??-Si layer. The properties of such junctions are described by a classical resistive model. Josephson junctions with a resonance mechanism of current transport through impurity centers are formed at a lower degree of doping of the ??-Si layer. The high-frequency properties of such junctions are shown to change. The experimental results demonstrate that these junctions are close to SINIS-type Josephson junctions.     

Manifestation of geometric resonance in current dependence of AC susceptibility for unshunted array of Nb–Alx–Nb Josephson junctions

A pronounced resonance-like structure has been observed in the current dependence of AC susceptibility for two-dimensional array of unshunted Nb–Al_x–Nb Josephson junctions. Using a single-plaquette approximation, we were able to successfully fit our data assuming that resonance structure is related to the geometric (inductive) properties of the array.     

Leakage current analysis of La0.67Sr0.33MnO3/Nb:SrTiO3 p–n junctions

La_0.67Sr_0.33MnO₃ (LSMO) films were grown on 0.7 wt% Nb-doped SrTiO₃ (NSTO) single-crystal substrates by pulsed laser deposition. The crystal phase structure and surface morphology of the LSMO films were investigated by means of X-ray diffraction method and atomic force microscopy, respectively. The diode-like behavior was observed in the leakage currents of the LSMO/NSTO heterojunction, by which I–V curves were measured at room temperature. The leakage current of LSMO/NSTO heterojunction follows the space-charge-limited conduction (SCLC) model under lower forward bias. As the forward bias increases, the barrier at the LSMO/NSTO interface becomes narrower and lower, which allows electrons to go over/through the interface barrier by the conduction mechanisms of Schottky emission and interface-limited Fowler–Nordheim tunneling, respectively. Under the same backward bias, the leakage current still undergoes the Ohmic law region according to the SCLC model, which is due to the drift currents of holes in the LSMO films and electrons in the NSTO substrates.     

Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin–orbit coupling

We have studied the characteristics of current-induced nonequilibrium spin polarization in semiconductor-nanowire/swave superconductor junctions with strong spin–orbit coupling. It was found that within some parameter regions the magnitude of the current-induced nonequilibrium spin polarization density in such structures will increase(or decrease) with the decrease(or increase) of the charge current density, in contrast to that found in normal spin–orbit coupled semiconductor structures. It was also found that the unusual characteristics of the current-induced nonequilibrium spin polarization in such structures can be well explained by the effect of the Andreev reflection.     

Nanocomposite L10 FePt–SiNx and FePt–SiNx–C films with large coercivity and small grain size on a TiN intermediate layer

FePt–SiN_x–C films with high coercivity, (001) texture and small grain size were obtained by co-sputtering FePt, Si₃N₄ and C on TiN/CrRu/glass substrate at 380 °C. Without C doping, FePt–SiN_x films with good perpendicular anisotropy and a single layer structure were obtained. However, the grain size was still too large and the grain isolation was poor. When C was doped into the FePt–SiN_x films, the out-of-plane coercivity increased due to the decrease of the exchange coupling. In addition, the grain size of the FePt films decreased, and well-separated FePt grains with uniform size were formed. The microstructure of [FePt–SiN_x 40 vol%]−20 vol% C films changed from a single layer structure to a multiple layer structure when the FePt thickness was increased from 4 to 10 nm. By optimizing the sputtering process, the [FePt (4 nm)–SiN_x 40 vol%]−20 vol% C (001) film with coercivity higher than 21.5 kOe, a single layer structure, and small average FePt grain size of 5.6 nm was obtained, which makes it suitable for ultrahigh density perpendicular recording.     

High-frequency FeCoNiNbB–SiO2 nano-granular films with high resistivity and adjustable resonance frequency from 1.3 to 7.8?GHz

A series of (FeCoNiNbB) _x –(SiO₂)_1−x nano-granular thin films were fabricated by magnetron sputtering with different oblique incidence angles θ. High-resolution transmission electron micrographs show that the films consist of amorphous CoFeM (M = Ni, Nb, B) alloy particles with diameter about 2 nm surrounded by amorphous SiO₂ matrix. Excellent soft magnetic properties have been achieved with a variable in-plane uniaxial magnetic anisotropy field H _k0, which increases monotonically with θ and x, and decreases with the composition of B in FeCoM. For one typical sample of x=0.63 with θ=30°, H _ch and H _ce are 4.2 Oe and 5.4 Oe, respectively, ρ reaches 12.5 mΩ cm and 4π M _s and H _k0 are 5.70 kG s and 92 Oe, respectively, which lead to a high ferromagnetic resonance frequency f _r of 2.2 GHz. Based on the analysis of experimental results, two sources for the origin of the magnetic anisotropy, namely anisotropic magnetic coupling and orientation order of atomic pairs, are suggested.