High performance thermoelectrics from earth-abundant materials: enhanced figure of merit in PbS by second phase nanostructures

Lead sulfide, a compound consisting of elements with high natural abundance, can be converted into an excellent thermoelectric material. We report extensive doping studies, which show that the power factor maximum for pure n-type PbS can be raised substantially to ~12 μW cm(-1) K(-2) at >723 K using 1.0 mol % PbCl(2) as the electron donor dopant. We also report that the lattice thermal conductivity of PbS can be greatly reduced by adding selected metal sulfide phases. The thermal conductivity at 723 K can be reduced by ~50%, 52%, 30%, and 42% through introduction of up to 5.0 mol % Bi(2)S(3), Sb(2)S(3), SrS, and CaS, respectively. These phases form as nanoscale precipitates in the PbS matrix, as confirmed by transmission electron microscopy (TEM), and the experimental results show that they cause huge phonon scattering. As a consequence of this nanostructuring, ZT values as high as 0.8 and 0.78 at 723 K can be obtained for nominal bulk PbS material. When processed with spark plasma sintering, PbS samples with 1.0 mol % Bi(2)S(3) dispersion phase and doped with 1.0 mol % PbCl(2) show even lower levels of lattice thermal conductivity and further enhanced ZT values of 1.1 at 923 K. The promising thermoelectric properties promote PbS as a robust alternative to PbTe and other thermoelectric materials.     

Thermoelectrics with earth abundant elements: high performance p-type PbS nanostructured with SrS and CaS

We report high thermoelectric performance in nanostructured p-type PbS, a material consisting of highly earth abundant and inexpensive elements. The high level of Na doping switched intrinsic n-type PbS to p-type and substantially raised the power factor maximum for pure PbS to ~9.0 μW cm(-1) K(-2) at >723 K using 2.5 at. % Na as the hole dopant. Contrary to that of PbTe, no enhancement in the Hall coefficient occurs at high temperature for heavily doped p-type PbS, indicating a single band model and no heavy hole band. We also report that the lattice thermal conductivity of PbS can be greatly reduced by adding SrS or CaS, which form a combination of a nanostructured/solid solution material as determined by transmission electron microscopy. We find that both nanoscale precipitates and point defects play an important role in reducing the lattice thermal conductivity, but the contribution from nanoscale precipitates of SrS is greater than that of CaS, whereas the contribution from point defects in the case of CaS is greater than that of SrS. Theoretical calculations of the lattice thermal conductivity based on the modified Callaway model reveal that both nanostructures and point defects (solid solution) effectively scatter phonons in this system. The lattice thermal conductivity at 723 K can be reduced by ~50% by introducing up to 4.0 at. % of either SrS or CaS. As a consequence, ZT values as high as 1.22 and 1.12 at 923 K can be achieved for nominal Pb(0.975)Na(0.025)S with 3.0 at. % SrS and CaS, respectively. No deterioration was observed after a 15 d annealing treatment of the samples, indicating the excellent thermal stability for these high performance thermoelectrics. The promising thermoelectric properties of nanostructured PbS point to a robust low cost alternative to other high performance thermoelectric materials.     

Spinodal decomposition and nucleation and growth as a means to bulk nanostructured thermoelectrics: enhanced performance in Pb(1-x)Sn(x)Te-PbS

The solid-state transformation phenomena of spinodal decomposition and nucleation and growth are presented as tools to create nanostructured thermoelectric materials with very low thermal conductivity and greatly enhanced figure of merit. The systems (PbTe)(1-x)(PbS)(x) and (Pb(0.95)Sn(0.05)Te)(1-x)(PbS)(x) are not solid solutions but phase separate into PbTe-rich and PbS-rich regions to produce coherent nanoscale heterogeneities that severely depress the lattice thermal conductivity. For x > approximately 0.03 the materials are ordered on three submicrometer length scales. Transmission electron microscopy reveals both spinodal decomposition and nucleation and growth phenomena the relative magnitude of which varies with x. We show that the (Pb(0.95)Sn(0.05)Te)(1-x)(PbS)(x) system, despite its nanostructured nature, maintains a high electron mobility (>100 cm(2)/V x s at 700 K). At x approximately 0.08 the material achieves a very low room-temperature lattice thermal conductivity of approximately 0.4 W/m x K. This value is only 28% of the PbTe lattice thermal conductivity at room temperature. The inhibition of heat flow in this system is caused by nanostructure-induced acoustic impedance mismatch between the PbTe-rich and PbS-rich regions. As a result the thermoelectric properties of (Pb(0.95)Sn(0.05)Te)(1-x)(PbS)(x) at x = 0.04, 0.08, and 0.16 were found to be superior to those of PbTe by almost a factor of 2. The relative importance of the two observed modes of nanostructuring, spinodal decomposition and nucleation and growth, in suppressing the thermal conductivity was assessed in this work, and we can conclude that the latter mode seems more effective in doing so. The promise of such a system for high efficiency is highlighted by a ZT approximately 1.50 at 642 K for x approximately 0.08.     

Nanostructures boost the thermoelectric performance of PbS

In situ nanostructuring in bulk thermoelectric materials through thermo-dynamic phase segregation has established itself as an effective paradigm for optimizing the performance of thermoelectric materials. In bulk PbTe small compositional variations create coherent and semicoherent nanometer sized precipitates embedded in a PbTe matrix, where they can impede phonon propagation at little or no expense to the electronic properties. In this paper the nanostructuring paradigm is for the first time extended to a bulk PbS based system, which despite obvious advantages of price and abundancy, so far has been largely disregarded in thermoelectric research due to inferior room temperature thermoelectric properties relative to the pristine fellow chalcogenides, PbSe and PbTe. Herein we report on the synthesis, microstructural morphology and thermoelectric properties of two phase (PbS)(1-x)(PbTe)(x)x = 0-0.16 samples. We have found that the addition of only a few percent PbTe to PbS results in a highly nanostructured material, where PbTe precipitates are coherently and semicoherently embedded in a PbS matrix. The present (PbS)(1-x)(PbTe)(x) nanostructured samples show substantial decreases in lattice thermal conductivity relative to pristine PbS, while the electronic properties are left largely unaltered. This in turn leads to a marked increase in the thermoelectric figure of merit. This study underlines the efficiency of the nanostructuring approach and strongly supports its generality and applicability to other material systems. We demonstrate that these PbS-based materials, which are made primarily from abundant Pb and S, outperform optimally n-type doped pristine PbTe above 770 K.     

New and Old Concepts in Thermoelectric Materials

Herein we cover the key concepts in the field of thermoelectric materials research, present the current understanding, and show the latest developments. Current research is aimed at increasing the thermoelectric figure of merit (ZT) by maximizing the power factor and/or minimizing the thermal conductivity. Attempts at maximizing the power factor include the development of new materials, optimization of existing materials by doping, and the exploration of nanoscale materials. The minimization of the thermal conductivity can come through solid‐solution alloying, use of materials with intrinsically low thermal conductivity, and nanostructuring. Herein we describe the most promising bulk materials with emphasis on results from the last decade. Single‐phase bulk materials are discussed in terms of chemistry, crystal structure, physical properties, and optimization of thermoelectric performance. The new opportunities for enhanced performance bulk nanostructured composite materials are examined and a look into the not so distant future is attempted.     

Nanostructured materials for thermoelectric applications

Recent studies indicate that nanostructuring can be an effective method for increasing the dimensionless thermoelectric figure of merit (ZT) in materials. Most of the enhancement in ZT can be attributed to large reductions in the lattice thermal conductivity due to increased phonon scattering at interfaces. Although significant gains have been reported, much higher ZTs in practical, cost-effective and environmentally benign materials are needed in order for thermoelectrics to become effective for large-scale, wide-spread power and thermal management applications. This review discusses the various synthetic techniques that can be used in the production of bulk scale nanostructured materials. The advantages and disadvantages of each synthetic method are evaluated along with guidelines and goals presented for an ideal thermoelectric material. With proper optimization, some of these techniques hold promise for producing high efficiency devices.     

Solid-solutioned homojunction nanoplates with disordered lattice: a promising approach toward "phonon glass electron crystal" thermoelectric materials

The concept of "phonon glass electron crystal" (PGEC) was proposed in the mid-1990s to maximize the ZT value for thermoelectric materials, based on its combined advantages of low thermal conductivity as in a glass but high electricity as in a well-ordered crystal. Although a great amount of research in complex materials systems for achieving this concept has been done, a perfect "PGEC" material has not been acquired yet. Herein, we first put forward a solid-solutioned homojunction in high temperature phase with disordered lattice, which possesses both high electrical conductivity and low thermal conductivity, as an effective way to optimize the low/mid-temperature thermoelectric property. As an example, nonambient cubic phase AgBiSe(2) was successfully stabilized to room temperature through the formation of a solid solution by Sb incorporation for the first time, and furthermore, in situ formed homojunctions on the surface of solid-solutioned nanoplates were also first achieved through a simple colloidal method. A significant enhancement of thermoelectric performance at low/mid-temperature was realized through synergistical regulation on electronic and thermal transport. As a result, compared to that of original AgBiSe(2) (ZT = 0.03 at 550 K), the ZT value of AgBi(0.5)Sb(0.5)Se(2) was increased to 0.51 at 550 K by the formation of a solid solution, and then further increased to 1.07 at 550 K by the formation of solid-solutioned homojunction.     

导电聚合物热电材料研究进展

导电聚合物在室温下具有较高的电导率(σ)、较低的热导率(κ)、柔韧性好、易于合成、原料来源丰富、对环境无污染等优势,是目前最具有热电应用潜力的有机热电材料之一。然而,目前针对导电聚合物作为有机热电材料的相关研究依然处于初级阶段,其在空气气氛中的化学稳定性问题、低的热电优值及尚未完全明确的热电机制一直困扰着研究人员。本文主要针对以上问题,在对前人的研究成果进行综述的基础上对目前有机热电材料所面临的关键问题进行阐述和总结。     

Recent progress in oxide thermoelectric materials: p-type Ca3Co4O9 and n-type SrTiO3(-)

Thermoelectric energy conversion technology to convert waste heat into electricity has received much attention. In addition, metal oxides have recently been considered as thermoelectric power generation materials that can operate at high temperatures on the basis of their potential advantages over heavy metallic alloys in chemical and thermal robustness. We have fabricated high-quality epitaxial films composed of oxide thermoelectric materials that are suitable for clarifying the intrinsic "real" properties. This review focuses on the thermoelectric properties of two representative oxide epitaxial films, p-type Ca 3Co 4O 9 and n-type SrTiO 3, which exhibit the best thermoelectric figures of merit, ZT (= S (2)sigma Tkappa (-1), S = Seebeck coefficient, sigma = electrical conductivity, kappa = thermal conductivity, and T = absolute temperature) among oxide thermoelectric materials reported to date. In addition, we introduce the recently discovered giant S of two-dimensional electrons confined within a unit cell layer thickness ( approximately 0.4 nm) of SrTiO 3.     

Nanostructured AgPb(m)SbTe(m+2) system bulk materials with enhanced thermoelectric performance

Nanostructured Ag0.8Pbm+xSbTem+2 (m = 18, x = 4.5) system thermoelectric materials have been fabricated by combining mechanical alloying (MA) and spark plasma sintering (SPS) methods followed by annealing for several days to investigate the effect on microstructure and thermoelectric performance. It was found that appropriate annealing treatment could reduce both the electrical resistivity and the thermal conductivity at the same time, consequently greatly enhancing the thermoelectric performance. A low electrical resistivity of 2 x 10-3 Ohm-cm and low thermal conductivity of 0.89 W m-1 K-1 were obtained for the sample annealed for 30 days at 700 K. The very low thermal conductivity is supposed to be due to the nanoscopic Ag/Sb-rich regions embedded in the matrix. A high ZT value of 1.5 at 700 K has been achieved for the sample annealed for 30 days.     

Superionic phase transition in silver chalcogenide nanocrystals realizing optimized thermoelectric performance

Thermoelectric has long been recognized as a potentially transformative energy conversion technology due to its ability to convert heat directly into electricity. However, how to optimize the three interdependent thermoelectric parameters (i.e., electrical conductivity σ, Seebeck coefficient S, and thermal conductivity κ) for improving thermoelectric properties is still challenging. Here, we put forward for the first time the semiconductor-superionic conductor phase transition as a new and effective way to selectively optimize the thermoelectric power factor based on the modulation of the electric transport property across the phase transition. Ultra low value of thermal conductivity was successfully retained over the whole investigated temperature range through the reduction of grain size. As a result, taking monodisperse Ag(2)Se nanocrystals for an example, the maximized ZT value can be achieved around the temperature of phase transition. Furthermore, along with the effective scattering of short-wavelength phonons by atomic defects created by alloying, the alloyed ternary silver chalcogenide compounds, monodisperse Ag(4)SeS nanocrystals, show better ZT value around phase transition temperature, which is cooperatively contributed by superionic phase transition and alloying at nanoscale.     

Nanostructuration of CoSi by mechanical milling and mechanical alloying

CoSi is an inexpensive thermoelectric material for medium temperature (200–500 °C). Its power factor is as large as the state of the art materials; however, its thermal conductivity is too large. Then, improving its thermoelectric performances implies increasing the scattering of phonons, which can be performed by nanostructuring the material. In this paper we investigate the effect of nanostructuration on the structure, microstructure, lattice dynamics and stability of CoSi. We obtained powders of about 13 nm by mechanical milling bulk CoSi for only four hours or by mechanical alloying pure elements for twelve hours. Nanostructuration induces a 0.1% expansion of the lattice parameter. Raman spectroscopy, associated to ab initio calculations, highlights the effectiveness of nanostructuration on phonon scattering, showing a reduction of the phonon relaxation time by as much as 80%. Powders are stable up to 450 °C; then grains coarsen and a partial degradation of the material occurs, probably due to silicon sublimation. Our results indicate that nanostructuration should be considered when interested to reduce CoSi thermal conductivity.     

Phase and Defect Engineering of GeTe-based Alloys for High Thermoelectric Performance

The widespread applications of thermoelectric(TE) materials in power generation and solid-state cooling require improving their TE figure of merit(ZT) significantly. Recently, GeTe-based alloys have shown great promise as mid-temperature TE materials with superhigh TE performance, mostly due to their relatively high-degeneracy band structures and low lattice thermal conductivity. In this perspective, we review the most recent progress of the GeTe-based TE alloys from the view of phase and defect engineering. These two strategies are the most widely-used and efficient approaches in GeTe-based alloys to optimize the transport properties of electrons and phonons for high ZT. The phase transition from rhombohedral to cubic structure is believed to improve the band convergence of GeTe-based alloys for higher electrical performance. Typical defects in GeTe-based alloys include the point defects from Ge vacancies and substitutional dopants, linear and planar defects from Ge vacancies. The defect engineering of GeTe-based alloys is important not only for optimizing the carrier density but also for tuning the band structure and phonon-scattering processes. The summarized strategies in this review can also be used as a reference for guiding the further development of GeTe-based alloys and also other TE materials.     

Modulating the thermoelectric transport properties of the novel material Er2Te3 via strain

The rare-earth chalcogenide Er₂Te₃, characterized by its low lattice thermal conductivity, represents a highly promising and innovative thermoelectric material. However, there have been limited studies exploring its thermoelectric properties in depth. Additionally, it has been discovered that strain engineering is an effective method for enhancing thermoelectric properties, a technique successfully applied to relevant materials. In this study, we employed a first-principles approach in conjunction with the semi-classical Boltzmann transport theory to investigate the thermoelectric properties of Er₂Te₃ materials under −4% to 4% strain. The results indicate that applying compressive strain modulates thermoelectric properties more effectively than tensile strain for Er₂Te₃. Under strain modulation, the maximum power factor for both p-type and n-type Er₂Te₃ increases significantly, from 0.9 to 2.5 mW m⁻¹ K⁻² and from 14 to 18 mW m⁻¹ K⁻² at 300 K, respectively. Moreover, the figure of merit (ZT) for p-type and n-type Er₂Te₃ improves notably, from 0.15 to 0.25 and from 1.15 to 1.35, respectively, under −4% strain. Consequently, the thermoelectric properties of Er₂Te₃ materials can be significantly enhanced through strain application, with n-type Er₂Te₃ demonstrating substantial potential as a thermoelectric material.     

Thermoelectrics from abundant chemical elements: high-performance nanostructured PbSe-PbS

We report promising thermoelectric properties of the rock salt PbSe-PbS system which consists of chemical elements with high natural abundance. Doping with PbCl(2), excess Pb, and Bi gives n-type behavior without significantly perturbing the cation sublattice. Thus, despite the great extent of dissolution of PbS in PbSe, the transport properties in this system, such as carrier mobilities and power factors, are remarkably similar to those of pristine n-type PbSe in fractions as high as 16%. The unexpected finding is the presence of precipitates ~2-5 nm in size, revealed by transmission electron microscopy, that increase in density with increasing PbS concentration, in contrast to previous reports of the occurrence of a complete solid solution in this system. We report a marked impact of the observed nanostructuring on the lattice thermal conductivity, as highlighted by contrasting the experimental values (~1.3 W/mK) to those predicted by Klemens-Drabble theory at room temperature (~1.6 W/mK). Our thermal conductivity results show that, unlike in PbTe, optical phonon excitations in PbSe-PbS systems contribute to heat transport at all temperatures. We show that figures of merit reaching as high as ~1.2-1.3 at 900 K can be obtained, suggesting that large-scale applications with good conversion efficiencies are possible from systems based on abundant, inexpensive chemical elements.     

Excellent Room-Temperature Thermoelectricity of 2D GeP3: Mexican-Hat-Shaped Band Dispersion and Ultralow Lattice Thermal Conductivity

Although some atomically thin 2D semiconductors have been found to possess good thermoelectric performance due to the quantum confinement effect, most of their behaviors occur at a higher temperature. Searching for promising thermoelectric materials at room temperature is meaningful and challenging. Inspired by the finding of moderate band gap and high carrier mobility in monolayer GeP_3, we investigated the thermoelectric properties by using semi-classical Boltzmann transport theory and first-principles calculations. The results show that the room-temperature lattice thermal conductivity of monolayer GeP₃ is only 0.43 Wm⁻¹K⁻¹ because of the low group velocity and the strong anharmonic phonon scattering resulting from the disordered phonon vibrations with out-of-plane and in-plane directions. Simultaneously, the Mexican-hat-shaped dispersion and the orbital degeneracy of the valence bands result in a large p-type power factor. Combining this superior power factor with the ultralow lattice thermal conductivity, a high p-type thermoelectric figure of merit of 3.33 is achieved with a moderate carrier concentration at 300 K. The present work highlights the potential applications of 2D GeP₃ as an excellent room-temperature thermoelectric material.     

Enhanced TE properties of Cu@Ag/Bi2Te3 nanocomposites by decoupling electrical and thermal properties

Cu@Ag/Bi2Te3 nanocomposites were prepared for the first time by ultrasonic dispersion-rapid freezedrying method combined with spark plasma sintering(SPS).By changing the content of Cu@Ag nanoparticle,we could modulate the temperature dependent thermoelectric properties.The highest ZT value can be obtained at 450 K for 1 vol%Cu@Ag/Bi2Te3,which is benefited from the decoupling of electrical and thermal properties.With the increase of electrical conductivity,the absolute value of Seebeck coefficient lifts while the thermal conductivity declines.Meanwhile,the average ZT value between 300 K and 475 K was 0.61 for 1 vol%Cu@Ag/Bi2Te3,which is much higher than that of pristine Bi2 Te3.Therefore,the decoupling effect of Cu@Ag nanoparticles incorporation could be a promising method to broaden the application of Bi2Te3 based thermoelectric materials.     

The effect of Cu substitution on microstructure and thermoelectric properties of LaCoO(3) ceramics

La(Co, Cu)O(3-δ) ceramics were prepared by pressureless sintering of citrate precursor powders, and their thermoelectric properties were investigated with an emphasis on the influence of Cu doping and phase structure as well as microstructure. It was found that a secondary phase first appeared in the form of a network along the grain boundaries and then changed to dispersion with increasing Cu content, which effectively reduced the lattice thermal conductivity of the materials. The thermal conductivity was only 1.21 W m(-1) K(-1) for the sample LaCo(0.75)Cu(0.25)O(3-δ), being much lower as for the thermoelectric oxide materials. In addition, a small amount of Cu substitution for Co increased the electrical conductivity greatly and the absolute Seebeck coefficient, whose sign was also reversed from negative to positive. The dimensionless figure of merit, ZT, of LaCoO(3-δ) oxides at low and middle temperatures can be remarkably enhanced by substituting Co with Cu.     

Potential of Chevrel phases for thermoelectric applications

A low lattice thermal conductivity is one of the requirements to achieve high thermoelectric figures of merit. Several low thermal conductivity materials were identified and developed over the past few years at the Jet Propulsion Laboratory (JPL), including filled skutterudites and Zn₄Sb₃-based materials. A study of the mechanisms responsible for the high phonon scattering rates in these compounds has demonstrated that materials with structures that can accommodate additional atoms in their lattice are likely to possess low lattice thermal conductivity values. Chevrel phases (Mo₆Se₈-type) are just such materials and are currently being investigated at JPL for thermoelectric applications. The crystal structures of the Chevrel phases present cavities which can greatly vary in size and can contain a large variety of atoms ranging from large ones such as Pb to small ones such as Cu. In these materials, small inserted atoms usually show large thermal parameters which indicate that they move around and can significantly scatter the phonons. The electronic and thermal properties of these materials can potentially be controlled by a careful selection of the filling element(s). We have synthesized (Cu, Cu/Fe, Ti)_xMo₆Se₈ samples and report in this paper on their thermoelectric properties. Approaches to optimize the properties of these materials for thermoelectric applications are discussed. Solid State Sciences, 1293-2558/99/7-8/© 1999 Éditions scientifiques et médicales Elsevier SAS. All rights reserved.     

Optoelectronic structure and related transport properties of BiCuSeO-based oxychalcogenides: First principle calculations

Recent experiments have revealed that the p-type BiCuSeO-based oxychalcogenides compounds exhibit a high thermoelectric figures of merit due to their very low lattice thermal conductivities and moderate Seebeck coefficient in the medium temperature range. In the present work, we reported on the optoelectronic and thermoelectric properties using the full potential linear augmented plane wave method and modified Becke-Johnson potential with spin-orbit coupling. The properties show that the BiCuSeO-based oxychalcogenides exhibit a semiconductor behavior with band gap values of 0.51, 0.45 and 0.41 eV for BiCuSO, BiCuSeO, and BiCuTeO, respectively. Due to their prominent role for thermoelectric applications, we combined Boltzmann transport theory to DFT results to compute the transport properties, mainly electronic conductivity, thermal conductivity, Seebeck coefficient and power factor. The present results show the dominance of BiCuTeO for thermoelectric application compared to the BiCuSO and BiCuSeO.