Acetylene adsorption on silicon (100)-(4 × 2) revisited

The aim of this work is to revisit the problem of acetylene adsorption on silicon (100). Extending previous theoretical work and including van der Waals forces explicitly in the simulations we remove existing ambiguities about the adsorption sites. The simulated adsorption energies and scanning tunneling microscopy contours are in good agreement with experimental data, they support the interpretation of a two-dimer feature at the surface as resulting from the adsorption of two individual molecules. It is also found that the simulated apparent heights agree with experimental values, if the actual bandgap of silicon is taken into account.     

Cation-anion mixed-dimer structure of Al-induced (2 × 4) reconstruction on InAs(001)

Adsorption of Al atoms on the As-stabilized InAs(001)—(2 × 4) surface induces the formation of the Al-stabilized (2 × 4) reconstruction. The Al-stabilized (2 × 4) surface has mixed In–As dimer at the outermost layer with the Al atoms being incorporated into the subsurface layers. Heating of the Al-stabilized (2 × 4) surface further promotes the diffusion of Al into deeper layers, which results in the formation of the In-rich (4 × 2) structure with the ζa structure.     

SU(4)×SU(4)禁闭弱作用复合模型

本文对超色群为半单群的亚夸克模型结构作了讨论, 具体构造了一个SU(4)×SU(4)禁闭弱作用复合模型, 模型中给出了三代轻质量的复合粒子.     

Reversible and irreversible reactions of three oxygen precursors on InAs(0 0 1)-(4 × 2)/c(8 × 2)

The substrate reactions of three common oxygen sources for gate oxide deposition on the group III rich InAs(0 0 1)-(4 × 2)/c(8 × 2) surface are compared: water, hydrogen peroxide (HOOH), and isopropyl alcohol (IPA). Scanning tunneling microscopy reveals that surface atom displacement occurs in all cases, but via different mechanisms for each oxygen precursor. The reactions are examined as a function of post-deposition annealing temperature. Water reaction shows displacement of surface As atoms, but it does not fully oxidize the As; the reaction is reversed by high temperature (450 °C) annealing. Exposure to IPA and subsequent low-temperature annealing (100 °C) show the preferential reaction on the row features of InAs(0 0 1)-(4 × 2)/c(8 × 2), but higher temperature anneals result in permanent surface atom displacement/etching. Etching of the substrate is observed with HOOH exposure for all annealing temperatures. While nearly all oxidation reactions on group IV semiconductors are irreversible, the group III rich surface of InAs(0 0 1) shows that oxidation displacement reactions can be reversible at low temperature, thereby providing a mechanism of self-healing during oxidation reactions.     

First principles calculations of the Sc adsorption on Si(001)-c(2 × 4)

We have investigated the energetics and the atomic structure of the adsorption of Sc on the Si(001)-c(2 × 4) surface using first principles total energy calculations, within the periodic density functional. The Sc adsorption has been studied at high symmetry sites considering different concentrations. We have first explored the one atom case and then increased the coverage up to a 0.25 of a monolayer of Sc. For the adsorption of one Sc atom we have obtained that the most stable configuration corresponds to the adsorption in the trench between two Si dimers, at the C1 (cave) site. The interaction of the adsorbed Sc with the Si dimers induces a decrease of the dimers buckling amplitude. On the other hand Si dimers without interaction with the adsorbate have buckling amplitudes similar to those of the clean Si surface. When the Sc coverage is increased to two Sc atoms, the most stable structure corresponds to the adsorption at two consecutive V (valley-bridge) sites along the trench between Si dimers, resulting in the weakening of some of the Si dimers bonds. This result indicates that the formation of one dimensional Sc chains on the silicon surface is energetically and kinetically favorable.     

The electronic structures of commensurate Ru(0001)–(3 × 3)–4Kr and Ru(0001)–(5 × 5)–Kr using density functional theory

We have calculated the minimum energies for each of three positionings of the adatom unit cells for Ru(0001)–(3 × 3)–4Kr (high Kr coverage) and for Ru(0001)–(5 × 5)–Kr (low Kr coverage). The differences between the results for the low and high-coverage cases may clarify puzzles posed by the experimental results of Narloch and Menzel. The low-coverage solution converges to a structure having Kr in the top site at a height of 3.09 Å above the substrate with the adsorption energy 185 meV. In the high-coverage case, adatom unit cells with a corner Kr at top, fcc hollow, and hcp hollow locations are found to have nearly the same adsorption energy of 175 meV. The height of the corner atom above the substrate is found to be 3.35, 3.54, and 3.50 Å for the top, fcc hollow and hcp hollow sites, respectively. These results are explained by demonstrating that there is an enhancement of the substrate electronic density of states at krypton orbital energies in the low-coverage case.     

Structure determination of the Cu(0 0 1)–c(4 × 4)-Sn surface by low-energy electron diffraction

Low-energy electron diffraction (LEED) have been used to determine the Cu(0 0 1)–c(4 × 4)-Sn structure formed at 300 K. It is demonstrated that a structural model suggested by scanning tunneling microscopy observations is correct: The model consists of one substitutional Sn atom and four Sn adatoms in the unit cell. Optimum parameters of the determined c(4 × 4) structure reveal that Sn adatoms laterally are displaced by 0.30 Å away from ideal fourfold-hollow sites along the 〈100〉 directions. It is proposed that such displacements of the Sn adatoms cause the formation of a network of octagonal rings on Cu(0 0 1). The substitutional Sn atom is located at each center of the octagonal rings. The formation conditions of the network are discussed.     

Order-disorder transition on Si(001): c(4 × 2) to (2 × 1)

A phase transition between c(4 × 2) and (2 × 1) structures on the clean Si(001) surface has been observed at about 200 K by low energy electron diffraction. From the temperature dependence of the width and intensity of the diffraction spots this transition is concluded to be a second order order-disorder transition. The transition proceeds by a single stage, which is in strong contrast with the case of Ge(001) for which a two-stage transition has been reported.     

Tin-stabilized (1 × 2) and (1 × 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy,photoelectron spectroscopy,and ab initio calculations

Tin (Sn) induced (1 × 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn–III dimers. Furthermore, a new Sn-induced (1 × 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 × 2) reconstruction, and it is shown that the (1 × 4) reconstruction is stabilized as the adatom size increases.     

Ab initio study of Yb on the Ge(111)–(3 × 2) and Si(111)–(3 × 2) surfaces

The surface reconstruction, 3 × 2, induced by Yb adsorption on a Ge (Si)(111) surface has been studied using first principles density-functional calculation within the generalized gradient approximation. The two different possible adsorption sites have been considered: (i) H₃ (this site is directly above a fourth-layer Ge (Si) atom) and (ii) T₄ (directly above a second-layer Ge (Si) atom). We have found that the total energies corresponding to these binding sites are nearly the same, indeed for the Yb/Ge (Si)(111)–(3 × 2) structure the T₄ model is slightly energetic by about 0.01 (0.08) eV/unitcell compared with the H₃ model. In particular for the Ge sublayer, the energy difference is small, and therefore it is possible that the T₄, H₃, or T₄H₃ (half of the adatoms occupy the T₄ adsorption site and the rest of the adatoms are located at the H₃ site) binding sites can coexist with REM/Ge(111)–(3 × 2). In contrast to the proposed model, we have not determined any buckling in the Ge = Ge double bond. The electronic band structures of the surfaces and the corresponding natures of their orbitals have also been calculated. Our results for both substrates are seen to be in agreement with the recent experimental data, especially that of the Yb/Si(111)–(3 × 2) surface.     

Strained c(4 × 2) CoO(1 0 0)-like monolayer on Pd(1 0 0): Experiment and theory

We report on an interface-stabilized strained c(4 × 2) phase formed by cobalt oxide on Pd(1 0 0). The structural details and electronic properties of this oxide monolayer are elucidated by combination of scanning tunneling microscopy data, high resolution electron energy loss spectroscopy measurements and density functional theory. The c(4 × 2) periodicity is shown to arise from a rhombic array of Co vacancies, which form in a pseudomorphic CoO(1 0 0) monolayer to partially compensate for the compressive strain associated with the large lattice mismatch (～9.5%) between cobalt monoxide and the substrate. Deviation from the perfect 1:1 stoichiometry thus appears to offer a common and stable mechanism for strain release in Pd(1 0 0) supported monolayers of transition metal rocksalt monoxides of the first transition series, as very similar metal-deficient c(4 × 2) structures have been previously found for nickel and manganese oxides on the same substrate.     

As-rich (2 × 2) surface reconstruction on GaAs(111)A

The atomic structures and the formation processes of the Ga- and As-rich (2×2) reconstructions on GaAs(111)A have been studied. The Ga-rich (2×2) structure is formed by heating the As-rich (2×2) phase, but the reverse change hardly occurs by cooling the Ga-rich surface under the As₂ flux. Only when the Ga-rich (2×2) surface covered with amorphous As layers was thermally annealed, the As-rich (2×2) surface is formed. The As-rich (2×2) surface consists of As trimers located at a fourfold atop site of the outermost Ga layer, in which the rest-site Ga atom is replaced by the As atom.     

AN SU(4)×SU(2)×U(1) UNIFIED MODEL

In this paper we propose an SU(4)×SU(2)×U(1) unified model, in which the stratons and leptons of every generation belong to the same Multiplet, and the leptons will couple to the stratons. But this kind of coupling cannot cause the proton decay, and has only some effects in high energy scatterings. This model predicts the existense of two neutral intermediate bosons, instead of one, and the value of Weinberg angle to be sin²θ_w=0.25. The neutrinos have reasonable masses in the model.     

Optical second harmonic generation studies of the nature of the oxide-covered and clean c(4 × 4) and (2 × 4) reconstructed GaAs(001) surfaces

We report the application of the “epioptic” technique of optical second harmonic generation (SHG) to the study of surface chemical processes occurring at the technologically important (001) surfaces of the non-centrosymmetric compound semiconductor GaAs. SHG has been used to monitor the thermal removal of surface contamination from an GaAs(001) substrate mounted in a conventional molecular beam epitaxy (MBE) chamber. Rotational anisotropy plots of the reflected SH signal recorded at near-normal incidence indicate that the oxide layer is not fully disordered and possesses some structural anisotropy, i.e. some preferred net surface orientation. In addition the rotational anisotropy plots were observed to change in both intensity and apparent phase between the oxide-covered surface and the clean reconstructed surfaces. Following heating to 850 K under the background As₂ flux present in the chamber, the SH signal from the clean, reconstructed surface was approximately 5 × weaker than that observed for the contaminated surface and was subsequently found to be insensitive to the reconstruction change between the (2 × 4) and c(4 × 4) surfaces, in agreement with theoretical predictions for surfaces having 2mm and 4mm symmetry, respectively.These data are discussed in terms of the difficulties encountered when attempting to observe a surface SH response from a non-centrosymmetric substrate. The sensitivity of the technique towards the thin oxide overlayer suggests that for overlayers which are likely to possess net oriented in-plane dipoles due to the structural mismatch with the substrate, an SH response may be observed in preference to a bulk response when a normal incidence geometry is employed.     

GaAs(100)表面(4×1)结构的UPS研究

用偏振的紫外光源测量了GaAs(100)表面(4×1)结构的UPS谱,从清洁表面和吸附氧以后UPS的差谱中辨别出了在价带顶以下2eV以内的表面态峰,根据用偏振光所得到的谱和跃迁选择定则的讨论,认为表面态包含了三个峰,价带顶以下0.5eV处有一个对应于表面Ga原子桥键态的峰,在0.7eV处有对应于表面As原子桥键态的峰,而在1.3eV处的峰则同表面原子的悬键态相联系。 关键词：     

Critical phenomena in the β-(2×4) → α-(2×4) reconstruction transition on the (001) GaAs surface

The critical exponents of the β-(2×4) → α-(2×4) reconstruction phase transition on the (001) GaAs surface are determined experimentally. It is found that the phase transition is analogous to a van der Waals transition. The critical parameters T _c , P _c , and Θ_c have been measured experimentally. The mean field theory is applied, and three-parameter isotherms are obtained that agree with the experimental results at the following values of the parameters: E_st = 0.36 eV, ΔE = 0.18 eV, and E _i = 0.134 eV. Precision measurements of the critical exponents β and δ are carried out. Their values β = 1/8 and δ = 15 indicate that the phase transition is truly two-dimensional.     

Diffusion of a Ga adatom on the GaAs(001)‐c(4 × 4)‐heterodimer surface: A first principles study

The adsorption and diffusion behavior of a Ga adatom on the GaAs (001)‐c(4 × 4)-heterodimer surface were studied by employing ab initio density functional theory (DFT) computations in the local density approximation. Structural and bonding features of the c(4 × 4)-heterodimer reconstruction surface were examined. A comparison with the c(4 × 4)-ss reconstruction was performed. Minimum energy sites (MES) on the c(4 × 4)-heterodimer surface were located by mapping the potential energy surface for a Ga adatom. Barriers for diffusion of a Ga adatom between the neighboring MES were calculated by using top hopping- and exchange-diffusion mechanisms. We proposed two unique diffusion pathways for a Ga adatom diffusing between the global minimums of two neighboring unit cells. Signature differences between electronic structures of top hopping- and exchange‐diffusion mechanisms were studied for relevant atoms. We observed a higher diffusion barrier for exchange mechanism compared to top hopping.     

Real time dynamics of Si magic clusters mediating phase transformation: Si(111)-(1 × 1) to (7 × 7) reconstruction revisited

Using Scanning Tunneling Microscope (STM), we show that the surface undergoes phase transformation from disordered “1 × 1” to (7 × 7) reconstruction which is mediated by the formation of Si magic clusters. Mono-disperse Si magic clusters of size ~ 13.5 ± 0.5 Å can be formed by heating the Si(111) surface to 1200 °C and quenching it to room temperature at cooling rates of at least 100 °C/min. The structure consists of 3 tetra-clusters of size ~ 4.5 ? similar to the Si magic clusters that were formed from Si adatoms deposited by Si solid source on Si(111)-(7 × 7) [1]. Using real time STM scanning to probe the surface at ~ 400 °C, we show that Si magic clusters pop up from the (1 × 1) surface and form spontaneously during the phase transformation. This is attributed to the difference in atomic density between “disordered 1 × 1” and (7 × 7) surface structures which lead to the release of excess Si atoms onto the surface as magic clusters.