A study of kinetic effects in isotropic polycrystalline <Emphasis Type="Italic">p</Emphasis>-type silicon

A formula is derived for calculating the relaxation time of charge carriers scattered both by a disordered atomic lattice of polycrystalline silicon and by a system of disordered potential barriers formed on the surfaces of crystallites in isotropic polycrystalline silicon. The hole relaxation time is analyzed, and the temperature dependence of hole mobility is calculated for the p-type polycrystalline silicon. The calculations of the Hall factor, differential thermal emf, transverse magnetoresistance, and coefficients of elastoconductivity due to hole scattering by the disordered atomic lattice and by the potential barriers formed on the crystallite surfaces in isotropic polycrystalline p-type silicon are also made. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 76–88, February, 2008.     

Aluminum-assisted crystallization and <Emphasis Type="Italic">p</Emphasis>-type doping of polycrystalline Si

Aluminum-doped p-type polycrystalline silicon thin films have been synthesized on glass substrates using an aluminum target in a reactive SiH₄+Ar+H₂ gas mixture at a low substrate temperature of 300 °C through inductively coupled plasma-assisted RF magnetron sputtering. In this process, it is possible to simultaneously co-deposit Si–Al in one layer for crystallization of amorphous silicon, in contrast to the conventional techniques where alternating metal and amorphous Si layers are deposited. The effect of aluminum target power on the structural and electrical properties of polycrystalline Si films is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and Hall-effect analysis. It is shown that at an aluminum target power of 100 W, the polycrystalline Si film features a high crystalline fraction of 91%, a vertically aligned columnar structure, a sheet resistance of 20.2 kΩ/□ and a hole concentration of 6.3×10¹⁸ cm⁻³. The underlying mechanism for achieving the semiconductor-quality polycrystalline silicon thin films at a low substrate temperature of 300 °C is proposed.     

Estimation of the deformation-potential constant for <Emphasis Type="Italic">p</Emphasis>-type isotropic polycrystalline silicon through the deformation potential of a <Emphasis Type="Italic">p</Emphasis>-type silicon single crystal

A method of calculating the effective deformation-potential constant E ₁ for holes and longitudinal acoustic phonons in isotropic polycrystalline silicon is suggested. The deformation-potential constant E ₁ is estimated through the deformation potentials a, b, and d of the silicon single crystal. The procedure of averaging of the squared modulus of the hole and acoustic phonon interaction Hamiltonian written in the plane wave basis over the polycrystal ensemble provides the basis for calculation of the constant E ₁ . It is demonstrated that for T = 200–600 K, hole concentration p = (5.0–10.0)∙10¹⁹ cm^–3, and crystallite size d = 300–3000 ?, the deformationpotential constant E ₁ is independent of the hole concentration p, temperature T, and crystallite size d.     

Electrical properties,equivalent circuit,and dielectric relaxation studies on [(C<Subscript>3</Subscript>H<Subscript>7</Subscript>)<Subscript>4</Subscript>N]<Subscript>2</Subscript>Cd<Subscript>2</Subscript>Cl<Subscript>6</Subscript> polycrystalline

The Ac electrical conductivity and the dielectric relaxation properties of the [(C₃H₇)₄N]₂Cd₂Cl₆ polycrystalline sample have been investigated by means of impedance spectroscopy measurements over a wide range of frequencies and temperatures, 209 Hz–5 MHz and 361–418 K, respectively. The purpose is to make a difference between the electrical and dielectric properties of the polycrystalline sample and single crystal. Besides, a detailed analysis of the impedance spectrum suggests that the electrical properties of the material are strongly temperature-dependent. Plots of (Z" versus Z') are well fitted to an equivalent circuit model consisting of a series combination of grains and grains boundary elements. Moreover, the temperature dependence of the electrical conductivity in the different phases follows the Arrhenius law and the frequency dependence of σ (ω) follows the Jonscher’s universal dynamic law. Furthermore, the modulus plots can be characterized by full width at half height or in terms of a nonexperiential decay function φ(t) = exp(t/t)^β. Finally, the imaginary part of the permittivity constant is analyzed with the Cole–Cole formalism.     

Influence of low-intensive beta-irradiation on phase transformations in silicon at microindentation

Raman spectroscopy is used to investigate the morphology of silicon phase composition in the indenter imprint with spatial resolution of ~200 nm. Suppression of the efficiency of Si-XII, Si-III, and a-Si phase formation induced by beta-particle irradiation from a ⁹⁰Sr + ⁹⁰Y source (fluence F = 3.6⋅10¹⁰ cm^–2) is revealed.     

Structure and electrical properties of p-type twin ZnTe nanowires

Resonant tunneling is firstly found in twin p-type ZnTe nanowire field-effect transistors. The twin ZnTe nanowires are synthesized via the thermal evaporation process. X-ray diffraction and high-resolution transmission electron microscopy characterization indicate that the as-grown twin nanowire has a zinc-blende crystal structure with an integrated growth direction of [11-1]. The twin plane is (11-1) and the angle between the mirror symmetrical planes is 141°. The formation of twins is attributed to the surface tension from the eutectic liquid droplet. Field-effect transistors based on single ZnTe twin nanowire are constructed, the corresponding electrical measurements demonstrate that the twin nanowires have a p-type conductivity with a mobility (μ _h ) of 0.11 cm² V⁻¹ S⁻¹, and a carrier concentration (n _h ) of 1.1×10¹⁷ cm⁻³. Significantly, the negative differential resistance with a peak-to-valley current ratio of about 1.3 is observed in p-type twin ZnTe nanowire field-effect transistors at room temperature. As the periodic barriers produced in the periodic twin interfaces can form multi-barrier and multi-well along one-dimensional direction. The multibarrier can be modulated under external electrical field. When the resonant condition is met, the space charge will be enhanced with the inherent feedback mechanism, and the resonant tunneling will occur.     

Photoluminescence of fluoroacrylate polymers impregnated with Eu(bta)<Subscript>3</Subscript> using supercritical CO<Subscript>2</Subscript>

Optical properties (photoluminescence and absorption) of Eu(bta)₃(B) _n (B = H₂O or 1,10-phenanthroline) polycrystalline powders and fluoroacrylate polymers (FAPs) impregnated with these compounds using supercritical CO₂ (SC CO₂) were investigated. It was established that impregnation of Eu(bta)₃phen into the FAPs using an SC CO₂ solution was difficult to achieve. The type of B (ancillary ligand) and the polymer matrix were shown to influence the temperature quenching of photoluminescence of Eu³⁺ ions in the range 25–100°C. A comparative analysis of quantum yields (λ_ex = 300 and 380 nm) and photoluminescence decay times (λ_ex = 337.1 nm) for Eu(bta)₃B _n and for Eu(bta)₃B _n -doped FAPs was performed.     

Charge density wave and superconductivity in 2H- and 4H-NbSe<Subscript>2</Subscript>: A revisit

Good-quality hexagonal NbSe₂ single crystals were prepared. In 2H-NbSe₂, superconducting and charge density wave (CDW) transitions were found at T _s = 7.4 K and T _c = 35 K respectively as reported previously. We have noticed that these two transitions are changed to T _c = 42 K and T _s = 6.5 K, in 4H-NbSe₂. Thermopower has shown clear anomaly at CDW transitions. The anisotropic upper critical field was calculated as ~3 and 6.3 for 2H- and 4H-single crystals around t = 0.81, where t = T/T _s, from resistivity and explained in terms of coherence length. From the relation, H_c2 (T)=H_c2 (0)[1-t²]H_{\rm c2} (T)=H_{\rm c2} (0)[1-t^2], H_c2^l (0)H_{\rm c2}^l (0) was calculated as ~8.15 T and 16.98 T at t = 0.84 in 2H-NbSe₂ and 4H-NbSe₂ respectively. However, H_c2^t (0) = 2.68H_{\rm c2}^t (0) = 2.68T for both single crystals.     

Fluorescent Carbon Dots Capped with PEG<Subscript>200</Subscript> and Mercaptosuccinic Acid

The synthesis and functionalization of carbon nanoparticles with PEG₂₀₀ and mercaptosuccinic acid, rendering fluorescent carbon dots, is described. Fluorescent carbon dots (maximum excitation and emission at 320 and 430 nm, respectively) with average dimension 267 nm were obtained. The lifetime decay of the functionalized carbon dots is complex and a three component decay time model originated a good fit with the following lifetimes: τ ₁ = 2.71 ns; τ ₂ = 7.36 ns; τ ₃ = 0.38 ns. The fluorescence intensity of the carbon dots is affected by the solvent, pH (apparent pK _a of 7.4 ± 0.2) and iodide (Stern-Volmer constant of 78 ± 2 M⁻¹).     

Structure,thermal properties,conductivity and electrochemical stability of di-urethanesil hybrids doped with LiCF<Subscript>3</Subscript>SO<Subscript>3</Subscript>

Variable chain length di-urethane cross-linked poly(oxyethylene) (POE)/siloxane hybrid networks were prepared by application of a sol-gel strategy. These materials, designated as di-urethanesils (represented as d-Ut(Y′), where Y′ indicates the average molecular weight of the polymer segment), were doped with lithium triflate (LiCF₃SO₃). The two host hybrid matrices used, d-Ut(300) and d-Ut(600), incorporate POE chains with approximately 6 and 13 (OCH₂CH₂) repeat units, respectively. All the samples studied, with compositions ∞ > n ≥ 1 (where n is the molar ratio of (OCH₂CH₂) repeat units per Li⁺), are entirely amorphous. The di-urethanesils are thermally stable up to at least 200 °C. At room temperature the conductivity maxima of the d-Ut(300)- and d-Ut(600)-based di-urethanesil families are located at n = 1 (approximately 2.0 × 10⁻⁶ and 7.4 × 10⁻⁵ Scm⁻¹, respectively). At about 100 °C, both these samples also exhibit the highest conductivity of the two electrolyte systems (approximately 1.6 × 10⁻⁴ and 1.0 × 10⁻³ Scm⁻¹, respectively). The d-Ut(600)-based xerogel with n = 1 displays excellent redox stability.     

Validated Spectrofluorimetric Method for the Determination of Lamotrigine in Tablets and Human Plasma Through Derivatization with <Emphasis Type="BoldItalic">o</Emphasis>-phthalaldehyde

A sensitive, simple and selective spectrofluorimetric method was developed for the determination of Lamotrigine (LMT) in pharmaceutical formulations and biological fluids. The method is based on reaction of LMT with o-phthalaldehyde in presence of 2-mercaptoethanol in borate buffer of pH 9.8 to yield a highly fluorescent derivative that is measured at 448 nm after excitation at 337 nm. The different experimental parameters affecting the development and stability of the reaction product were carefully studied and optimized. The fluorescence-concentration plot was rectilinear over the range of 0.1–1.0 μg ml⁻¹ with lower limit of detection (LOD) 0.02 μg ml⁻¹ and limit of quantification (LOQ) 0.06 μg ml⁻¹ respectively. The proposed method was successfully applied to the the analysis of commercial tablets. Statistical comparison of the results obtained by the proposed and reference method revealed no significant difference in the performance of the two methods regarding the accuracy and precision respectively. The proposed method was further extended to the in-vitro and in-vivo determination of the drug in spiked and real human plasma. The mean percentage recoveries in spiked and real human plasma (n = 3) were 95.78 ± 1.37 and 90.93 ± 2.34 respectively. Interference arising from co-administered drugs was also studied. A proposal for the reaction pathway with o-phthalaldehyde was postulated.     

Cluster radioactivity leading to doubly magic <Superscript>100</Superscript>Sn and <Superscript>132</Superscript>Sn daughters

Decay of neutron-deficient ^{128 − 137}Gd parents emitting ⁴He to ³²S clusters are studied within the Coulomb and proximity potential model. The predicted half-lives are compared with other models and most of the values are well within the present experimental limit for measurements (T _1/2 < 10³⁰ s). The lowest T _1/2 value for ²⁸Si emission from ¹²⁸Gd indicates the role of doubly magic ¹⁰⁰Sn daughter in cluster decay process. It is also found that neutron excess in the parent nuclei slows down the cluster decay process. Geiger–Nuttal plots for all clusters are found to be linear with different slopes and intercepts. The α-decay half-lives of ^{148 − 152}Gd parents are computed and are in agreement with experimental data. The role of doubly magic ¹³²Sn daughter in cluster decay process is also examined for various neutron-rich Ba, Ce, Nd, Sm and Gd parents emitting clusters ranging from ⁴He to ³²Si. Alpha-like structures are most probable in the decays leading to ¹⁰⁰Sn, while non-α-like structures are probable in the decays leading to ¹³²Sn. The neutron–proton asymmetry in parent and daughter nuclei is responsible for the reduced decay rate in the decay leading to ¹³²Sn.     

Interaction of ethidium bromide and caffeine with DNA in aqueous solution

Two component (ethidium bromide–caffeine, ethidium bromide–DNA) and three component (ethidium bromide–caffeine–DNA) systems in aqueous saline (0.01 M NaCl) phosphate buffer solutions (pH 6.86, T = 298 K) are studied spectrophotometrically. The equilibrium constants for dimerization of caffeine, K _D  = 1.22 ± 2 M⁻¹, and for heteroassociation of ethidium bromide with caffeine, K = 71 ± 8 M⁻¹, in ethidium bromide–caffeine systems are determined. When the concentration of caffeine is increased, the dynamic equilibrium of the solution shifts toward formation of heterocomplexes which are, presumably, stabilized by dispersive and hydrophobic interactions of chromophores. The equilibrium parameters for ethidium bromide complex formation with DNA are calculated: the coupling constant for the dye with the biopolymer, K ₁ = (232 ± 16)⋅103 M⁻¹, and the number of base pairs of the biopolymer participating in bonding with the ligand, n ₁ = 3.6 ± 0.2, are calculated. Given these values, it is suggested that under these experimental conditions there are two types of bonding between ethidium bromide and the nucleic acid — intercalation and “external” bonds. A McGhee–von Hippel model for a three component system and the numerical values of the parameters for molecular complex formation in two component systems are used to calculate the bonding constant for caffeine with DNA, K ₂ = 127 ± 30 M⁻¹, and the number of base pairs of DNA which bond with caffeine, n ₂ = 1.7 ± 0.2. The concentrations of ethidium bromide and caffeine in the composition of two and three component complexes are calculated as functions of the nucleic acid content in the solution. An analysis of the concentration dependences shows that heteroassociation of ligands has a significant effect on the reduction in the concentration of ethidium bromide–DNA complexes in a three component system for low DNA concentrations, while at high DNA concentrations the bonding of caffeine with the biopolymer has this effect. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 1, pp. 143–151, January–February 2009.     

Plasma-filled rippled wall rectangular backward wave oscillator driven by sheet electron beam

Performance of the backward wave oscillator (BWO) is greatly enhanced with the introduction of plasma. Linear theory of the dispersion relation and the growth rate have been derived and analysed numerically for plasma-filled rippled wall rectangular waveguide driven by sheet electron beam. To see the effect of plasma on the TM₀₁ cold wave structure mode and on the generated frequency, the parameters used are: relativistic factor γ = 1.5 (i.e. v/c = 0.741), average waveguide height y ₀ = 1.445 cm, axial corrugation period z ₀ = 1.67 cm, and corrugation amplitude ε = 0.225 cm. The plasma density is varied from zero to 2 ×10¹² cm^− 3. The presence of plasma tends to raise the TM₀₁ mode cut-off frequency (14 GHz at 2 ×10¹² cm^− 3 plasma density) relative to the vacuum cut-off frequency (5 GHz) which also causes a decrease in the group velocity everywhere, resulting in a flattening of the dispersion relation. With the introduction of plasma, an enhancement in absolute instability was observed.     

Measurement of ionic conductivity of poly (<Emphasis Type="Italic">N</Emphasis>-vinylimidazole) and its fluoroborate salt in solid state

The conductivity of poly(N-vinylimidazole) (PVIM) and its fluoroborate salt (PVIM–HBF₄) are reported here. N-vinylimidazole is polymerized by free radical method and PVIM–HBF₄ is prepared by acidification of PVIM with HBF₄. The polyelectrolyte so formed has been characterized by infrared, hydrogen-1 nuclear magnetic resonance, thermogravimetric analyzer, and differential scanning calorimetry. Frequency and temperature dependence of AC conductivity has been studied to learn about the electrical conduction behavior in the materials. The electrical conductivity of the new material is found to be in the range of 10⁻⁵ to 10⁻⁶ S cm⁻¹.There is about 10²- to 10³-fold increase in conductivity of the polyelectrolyte. The material is shown to be a predominantly ionic conductor with t _ion ≈ 0.88. Apparent activation energies are found to be 0.397 and 0.250 eV for the polymer and the polyelectrolyte, respectively.     

Low voltage operating OFETs based on solution-processed metal phthalocyanines

The class of sodium salts of sulphonated metal phthalocyanines (MePCS _x , S = SO₃Na, x=1–4) was investigated as a p-type channel component in organic field-effect transistors (OFETs). The solubility of these materials appears to be enhanced compared to their non-sulphonated counterparts (MePCs). We fabricated transistors based on MePCS _x varying the central metal atom (Me = Ni, Co, Zn, Al) and we evaluated the dependence of transistor performance on the nature of the central atom and the degree of sulphonation. The best results were obtained in the case of Ni and low sulphur content. In this case the mobility value is μ=1.08 cm² V⁻¹ s⁻¹ and the on/off current ratio ∼10³. The degree of sulphonation affects the electric field inside the active film in a way analogous to the case of polyelectrolyte-gated OFETs. The Na⁺ counter ions present in the channel contribute to the device characteristics but their concentration should be controlled in order to optimize device performance.     

Influence of carbon additive on the properties of spherical Li<Subscript>4</Subscript>Ti<Subscript>5</Subscript>O<Subscript>12</Subscript> and LiFePO<Subscript>4</Subscript> materials for lithium-ion batteries

Preparing spherical particles with carbon additive is considered as one effective way to improve both high rate performance and tap density of Li₄Ti₅O₁₂ and LiFePO₄ materials. Spherical Li₄Ti₅O₁₂/C and LiFePO₄/C composites are prepared by spray-drying–solid-state reaction method and controlled crystallization–carbothermal reduction method, respectively. The X-ray diffraction characterization, scanning electron microscope, Brunauer–Emmett–Teller, alternating current impedance analyzing, tap density testing, and electrochemical property measurements are investigated. After hybridizing carbon with a proper quantity, the crystal grain size of active materials is remarkably decreased and the electrochemical properties are obviously improved. The Li₄Ti₅O₁₂/C and LiFePO₄/C composites prepared in this work are spherical. The tap density and the specific surface area are as high as 1.71 g cm⁻³ and 8.26 m² g⁻¹ for spherical Li₄Ti₅O₁₂/C, which are 1.35 g cm⁻³ and 18.86 m² g⁻¹ for spherical LiFePO₄/C powders. Between 1.0 and 3.0 V versus Li, the reversible specific capacity of the Li₄Ti₅O₁₂/C is more than 150 mAh g⁻¹ at 1.0-C rate. Between 2.5 and 4.2 V versus Li, the reversible capacity of the LiFePO₄/C is close to 140 mAh g⁻¹ at 1.0-C rate.     

Specific heat measurement of stable and metastable liquid Ti–Al alloys

The specific heats of liquid Ti–20at.%Al and Ti–51at.%Al alloys are determined to be 33.01±2.75 and 31.27±2.91 J mol⁻¹ K⁻¹ in the stable superheated and metastable undercooled states by using an electromagnetic levitation drop calorimeter. The experimental temperature ranges are 1733–2133 K and 1511–1948 K, and maximum undercoolings of 230 (0.12 T _L) and 242 K (0.14 T _L) are achieved, respectively. On the basis of the experimental results, the specific heat dependence on the composition is obtained for binary Ti–Al alloys.     

Europium(III) Concentration Effect on the Spectroscopic and Photoluminescent Properties of BaMoO4:Eu

BaMoO₄:Eu (BEMO) powders were synthesized by the polymeric precursor method (PPM), heat treated at 800 °C for 2 h in a heating rate of 5 °C/min and characterized by powder X-ray diffraction patterns (XRD), Fourier Transform Infra-Red (FTIR) and Raman spectroscopy, besides room temperature Photoluminescence (PL) measurements. The emission spectra of BEMO samples under excitation of 394 nm present the characteristic Eu³⁺ transitions. The relative intensities of the Eu³⁺ emissions increase as the concentration of this ion increases from 0.01 to 0.075 mol, but the luminescence is drastically quenched for the Ba_0.855Eu_0.145MoO₄ sample. The one exponential decay curves of the Eu^{3+ 5}D₀→⁷F₂ transition, λ _exc = 394 nm and λ _em = 614 nm, provided the decay times of around 0.54 ms for all samples. It was observed a broadening of the Bragg reflections and Raman bands when the Eu⁺³ concentration increases as a consequence of a more disordered material. The presence of MoO₃ and Eu₂Mo₂O₇ as additional phases in the BEMO samples where observed when the Eu³⁺ concentration was 14.5 mol%.     

Measurement and simulation of specific heat for metastable liquid Ni80Fe10Cu10 alloy

The specific heat of undercooled liquid Ni₈₀Fe₁₀Cu₁₀ alloy was experimentally measured by electromagnetic levitation drop calorimeter, and also numerically simulated by the molecular dynamics method. The achieved maximum undercooling is up to 252 K (0.15 T _L) in the experiments, and the measured result is 41.67 J mol⁻¹ K⁻¹. The simulation provides calculated data within 0∼702 K undercooling range, which is much broader than the experimental regime. The simulated value is 37.02 J mol⁻¹ K⁻¹. Although there exists a difference of 4.65 J mol⁻¹ K⁻¹ between them, the result is quite acceptable for simulation. Furthermore, the liquid structure of undercooled Ni₈₀Fe₁₀Cu₁₀ alloy is studied in terms of the total and partial pair distribution functions, which display that the ordered degree of atoms enhances from a normal liquid to metastable state.