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1.
采用凝胶-燃烧法合成了Ca3Sc2Si3O12 ∶Ce绿色LED用荧光粉,用X射线粉末衍射(XRD)、扫描电镜(SEM)、荧光光谱仪等对合成产物进行了分析和表征.结果表明:通过添加H3BO3做助熔剂,制得的荧光粉晶相纯正,颗粒形貌均呈现为较规则的类球形,而且所得荧光粉的粒径均小于1 μm.发射光谱呈现为一宽带,发射主峰位于505 nm,该宽峰对应于Ce3+关键词: 白光LED 荧光粉 3Sc2Si3O12 ∶Ce')" href="#">Ca3Sc2Si3O12 ∶Ce 发光  相似文献   

2.
Abstract

AC and DC electrical measurements between 273 and 800 K were used to characterize the electrical conductivity of Al2O3: Mg single crystals containing [Mg]0 centers. At low fields contacts are blocking. At high fields, electrical current flows steadily through the sample and the I–V characteristic corresponds to a directly biased barrier with a series resistance (bulk resistance). AC measurements yield values for the junction capacitance as well as for the sample resistance, and provide reproducible conductivity values. The conductivity varies linearly with the [Mg]0 concentration and a thermal activation energy of 0.67 eV was obtained, which agrees very well with the activation energy previously reported for the motion of free holes.  相似文献   

3.
4.
The optical absorption spectra (d-d transition bands) and covalent effect of Ni2+ ions in octahedral sites of Ca3Sc2Ge3O12 crystal have been investigated by the full energy matrix based on the two spin–orbit coupling parameters model. The bond length of octahedral site is Ri?=?2.19 Å, which can be determined by the cubic crystal-field parameter and optical spectral data. The lattice distortion of the Ni2+ center in Ca3Sc2Ge3O12 crystal is also obtained from the calculations. In addition, the result has shown that the covalent effect of Ni2+ ion in the octahedral site of Ga3Sc2Ge3O12 is obvious and cannot be ignored. The calculated d-d transition bands agree well with that of the experimental findings, suggesting that the present methods can explain reasonably the optical spectral data and covalent effect of 3d8 ions in octahedral lattices.  相似文献   

5.
Submicron core-shell structure particles SiO2@Y3Al5O12:Er3+, which silica spherical particles was coated with an yttrium aluminum garnet (Y3Al5O12) layer doped with Er3+, were prepared by the modified Pechini-Type sol-gel method for the first time. The structure and morphology of samples were detected by the X-ray powder diffraction (XRD) measurement, field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM), respectively. The results indicate that well-crystallized garnet nanocrystallines were formed on the surface of the silica particles. The luminescent spectra in near infrared and visible region of the core-shell structured SiO2@Y3Al5O12:Er3+ powders were also investigated and compared with those of the pure Y3Al5O12:Er3+ and the Er3+ doped silicate glass. The results show that mono-dispersed SiO2@Y3Al5O12:Er3+ core-shell spherical particles with the near infrared, red and green luminescent emissions under the excitation of 980 nm laser diode have been successfully synthesized.  相似文献   

6.
The absorption spectra of CO and CO2 confined in nanopores of SiO2/Al2O3 xerogel have been measured using a Bruker IFS-125 HR Fourier spectrometer. Dependences of the half-width values on rotational quantum numbers and the line shift mean values are studied and compared with the data available in literature. Possible causes which can affect the rotational dependences are discussed.  相似文献   

7.
A coating method with precipitating process was developed to reduce the particle size and to improve the particle dispersion of Y3Al5O12:Tb3+ phosphor prepared by sol-gel method. The particle morphology was observed by using SEM and TEM; and the particle size and its dispersion was measured by using laser scattering technique. Several coating materials were tested. Among them, Al2(SiO3)3 coating not only reduced the particle size from several micrometers to ∼1 μm and improved the particle dispersion, but also well kept luminescent intensities and improved the duration of the phosphor under the bombardment of cathode ray. The mechanism of the particle size reduction was proposed.  相似文献   

8.
This paper describes the heavy ion-induced effects on the electrical characteristics of reactively sputtered ZrO2 and Al2O3 high-k gate oxides deposited in argon plus nitrogen containing plasma. Radiation-induced degradation of sputtered high-k dielectric ZrO2/Si and Al2O3/Si interface was studied using 45?MeV Li3+ ions. The devices were irradiated with Li3+ ions at various fluences ranging from 5?×?109 to 5?×?1012?ions/cm2. Capacitance–voltage and current–voltage characteristics were used for electrical characterization. Shift in flat band voltage towards negative value was observed in devices after exposure to ion radiation. Post-deposition annealing effect on the electrical behavior of high-k/Si interface was also investigated. The annealed devices showed better electrical and reliability characteristics. Different device parameters such as flat band voltage, leakage current, interface defect density and oxide-trapped charge have been extracted.The surface morphology and roughness values for films deposited in nitrogen containing plasma before and after ion radiation are extracted from Atomic Force Microscopy.  相似文献   

9.
ABSTRACT

We study the interaction of two mono-halomethanes (CH3F and CH3Cl) on Al12N12 and Al12P12 fullerene-like nano-clusters based on density functional theory (DFT). We search on fully optimised adsorbed systems by theoretical investigation considering binding energies, total density of states, natural bond orbital (NBO) charges, and molecular electrostatic potential. We found that the direction of electron transfer is from halomethane to nano-cluster for all systems, indicating p-type semiconductor property of the mentioned nano-clusters. The interaction energy of halomethanes on nano-clusters is evaluated with dispersion corrected (wB97XD) and non-corrected (B3LYP) methods in order to estimate the dispersion effects. The binding energies are found in order of Al12N12–CH3F > Al12N12–CH3Cl > Al12P12–CH3F > Al12P12–CH3Cl with the values of ?102.7, ?83.7, ?64.2, and ?48.9 kJ mol?1 based on wB97XD, respectively. We found significant changes in the location of HOMO as well as LUMO of nano-clusters upon adsorption of the above-mentioned molecules. As a result, we suggest the suitability of Al12N12 nano-cluster as a strong adsorbent for practical applications.  相似文献   

10.
We constructed a scanning near-field optical microscope (SNOM) on a commercially available atomic force microscopy (AFM) apparatus (SPM-9500J2; Shimadzu Corp.) to measure the stress distribution in ceramic composite materials. Features of our SNOM system are: (1) a compact SNOM head substituted for the original AFM head; (2) a wide scanning range (125 × 125 μm2) inherited from the original scanner; (3) use of conventional shear-force regulation; (4) an optical system for the illumination-collection (I-C) mode; (5) excitation by a 488 nm line of an Ar-ion laser, and (6) light detection by photon counting or a polychromator equipped with an electronically cooled charge coupled device (CCD). This SNOM system was used to measure the surface structure and stress distribution of an Al2O3/ZrO2 eutectic composite. We simultaneously measured topographic images and fluorescence spectra of an Al2O3/ZrO2 eutectic composite. We estimated its peak intensity, peak position, and peak width from the fluorescence spectrum during scanning, which respectively correspond to the abundance of Al2O3, stress in the grain, and the anisotropy of that stress. Mapping images showed that the stress and its anisotropy were weaker in the center of the Al2O3 grain than its boundary between Al2O3 and ZrO2. That observation suggests that Al2O3 underwent intense anisotropic stress induced by volume expansion in the phase transition of ZrO2 from the cubic phase to the monoclinic phase during preparation.  相似文献   

11.
Atomic layer deposited (ALD) Al2O3/dry-oxidized ultrathin SiO2 films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al2O3/SiO2, Al2O3, and SiO2) are fabricated and compared with each other. The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO2, and a relatively low gate leakage current of 1× 10-7 A/cm2 at electric field of 4 MV/cm comparable to Al2O3. The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface.  相似文献   

12.
将碳纳米管与纳米Al2O3-TiO2陶瓷粉末超声共混制备了碳纳米管/纳米Al2O3-TiO2复合粉末,测试了复合粉末在2—18GHz波段的电磁参数.研究表明:随着碳纳米管质量分数的增加,碳纳米管/纳米Al2O3-TiO2复合粉末的复介电常数和损耗角不断增大.当碳纳米管质量分数和厚度增加时,复合粉末对电磁波的反射率峰值先增加后减小,而谐振频率不断向低频移动.采用微弧等离子喷涂制备了7wt%碳纳米管/纳米Al2O3-TiO2复合吸波涂层,当厚度为1.5mm时,涂层最小反射率为-24.0dB,当厚度为2.0mm时,涂层小于-10dB的频带宽为3.60GHz,当温度为500℃高温时,1.0mm厚的涂层最小高温反射率为-12.2dB,小于-10dB频带宽为2.0GHz.复合涂层的实际厚度D与理论厚度d呈线关系:d=0.898D+0.515. 关键词: 等离子喷涂 碳纳米管 2O3-TiO2')" href="#">纳米Al2O3-TiO2 吸波性能  相似文献   

13.
研究了提拉法生长的Er3+/Yb3+:Gd3Sc2Ga3O12和Er3+:Gd3Sc2Ga3O12晶体在室温下320—1700nm范围的吸收光谱和500—750nm范围内的上转换荧光谱,同时对其上转换荧光的可能发生机制、途径以及上转换过程可能对Er3+相似文献   

14.
We present an AlInN/AlN/GaN MOS–HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al2O3 dielectric layer and a 0.3 μm field-plate (FP)-MOS--HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS--HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS--HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance--voltage (C--V) curve of the FP-MOS--HEMT demonstrates a high-quality interface of Al2O3/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μ m and a negligible double-pulse current collapse is achieved in the FP-MOS--HEMT. This is attributed to the adoption of an ultra-thin Al2O3 gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al2O3 FP-MOS--HEMT to deliver high currents and power densities in high power microwave technologies.  相似文献   

15.
A novel surfactant-modulated precipitation method is proposed to produce pure perovskite Pb(Sc1/2Nb1/2)O3 (PSN) nanopowders at a low temperature of 700 °C. The samples were characterized by XRD, SEM, TEM, and HRTEM, respectively. The results indicate that the powders exhibit a granular shape of 80 nm in diameter. It is believed that the nanosize of as-prepared PSN powders is dependent on the well-dispersed performance, which arouse from the combined effects of both precipitant TMAH and surfactant CTAB. The mechanism of the formation of the pure perovskite PSN nanopowders is discussed in detail. Our method is expected to create a new, low-cost route to produce the promising nanopowders of multi-component perovskite systems.  相似文献   

16.
The effect of high hydrostatic pressure (up to 10.3?GPa) at room temperature on fluorescence lifetime τ for R line (2E→4A2 transition) in ruby Al2O3:V2+ was studied. The performed studies show the linear increase of τ with increasing pressure. At 10.3?GPa, τ is about 1.36 times higher than at ambient pressure. The obtained trend was explained by a model which considered the effect of pressure on τ through an induced change of line position, inter-ionic distance, compressibility, and molecular polarizability. A good agreement between the calculated and experimental values for τ was obtained.  相似文献   

17.
Crystalloluminescence and temporary mechanoluminescence of As2O3 crystals are investigated. The crystalloluminescence spectra are similar to the photoluminescence and mechanoluminescence (of fresh crystals, in CO2 atmosphere) spectra. The mechanoluminescence spectra of freshly grown crystals taken in air consist of the superposition of the photoluminescence and nitrogen emissions. The mechanoluminescence spectra of old crystals of As2O3 consist of only the nitrogen emission. The total number of crystalloluminescence flashes is linearly related to the total mass of the crystals grown. The mechanoluminescence intensity increases with the mass of the crystals. The mechanoluminescence intensity decreases with the age of the crystals and the rate of decrease increases with increasing temperature of the crystals. Different possibilities of crystalloluminescence and mechanoluminescence excitations in As2O3 crystals are explored and it is concluded that crystalloluminescence and mechanoluminescence are of different origins.  相似文献   

18.
We investigated the effects of added Tm2O3, Sc2O3, and Yb2O3 on the superconducting properties of sintered Er123 samples. Tm2O3 addition caused the least Tc degradation, exhibiting a Tc above 90 K even for 17 vol% addition. Samples with added Sc2O3 maintained a Tc at above 90 K up to an addition of 7.2 vol%, while Yb2O3-containing samples showed a monotonic decrease in Tc with increased vol% of added Yb2O3. Tm2O3-containing samples exhibited a slight increase in Jc(0.1 T)/Jc(0) and had constant Jc values even for 17 vol% addition. XRD and SEM results indicate that the Tm2O3 is very stable in the superconducting matrix.  相似文献   

19.
CaCu3Ti4O12陶瓷的微观结构及直流导电特性   总被引:2,自引:0,他引:2       下载免费PDF全文
杨雁  李盛涛 《物理学报》2009,58(9):6376-6380
采用传统固相反应法制备了CaCu3Ti4O12陶瓷.XRD证实其CaCu3Ti4O12相;SEM观察到明显的晶粒晶界结构,晶界区亦由小晶粒构成;结合EDS结果,判定晶界区小晶粒为CuO.在较宽的温度范围内,CaCu3Ti4O12陶瓷的介电常数保持在105左右;当频率为103 Hz温度小于150 K时,介电常数迅速下降.在173—373 K温度范围内,通过其I-V特性,得到CaCu3Ti4O12陶瓷直流电导随温度的变化:直流电导与温度的关系可分为三部分,对应的活化能分别为0.681 eV,0.155 eV和0.009 eV,这与CuO陶瓷直流电导活化能一致.可以认为晶界区的CuO小晶粒在CaCu3Ti4O12陶瓷的直流电导中占主导,这为解释CaCu3Ti4O12陶瓷反常的介电性能提供了新的思路. 关键词: 3Ti4O12')" href="#">CaCu3Ti4O12 微观结构 直流电导 介电特性  相似文献   

20.
Integrating materials with different functionalities into a composite material to obtain synergetic properties has generated considerable interest in various scientific and technical fields. In this study, a dry-mechanical coating process was used to fix nanosized Al2O3 and CuO particles directly onto the surface of Al2O3 fiber substrates by employing high shear and compression forces. The resulting composite materials showed good dispersion and homogeneous distribution of Al2O3 and CuO nanoparticles. Important coating parameters, including initial particle loadings and processing times were investigated for their effects on coating characteristics and product properties. The experimental results showed that the product surface area increased with higher nanoparticle loadings. The degree of dispersion and homogenous distribution of Al2O3 nanoparticles with CuO nanoparticles increased with the processing time. Additionally, the crystalline phase of raw materials was preserved during the coating process under the conditions studied in this work.  相似文献   

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