合金钢材料光学常数的椭偏测量及其修正

用椭偏法测量了入射光波长0.632μm、入射角50°至85°时某合金钢的光学常数。考虑材料表面的粗糙度,用Ohlidal-Lukes理论对所测光学常数值进行修正,发现椭偏参量的修正量随入射角增大而增大。结果表明,用椭偏法测量合金钢光学常数时采用较小入射角能获得更精确的样片光学常数。     

椭偏法测量表面微粗糙合金钢材料的光学常数研究

采用椭偏法测量入射光波长为0.632μm,入射角为50°～85°时合金钢的光学常数。考虑材料表面的粗糙度,用Ohlidal-Lukes理论对所测光学常数值进行了修正,发现椭偏参量的修正量随入射角增大而增大。结果表明,测量入射角在50°～70°范围内测量值与修正后计算结果基本一致,在70°～85°范围内测量值与修正后的计算结果差距较大。因此,用椭偏法测量合金钢光学常数时使入射角小于70°,测量结果会更加准确。     

椭偏与光度法联用精确测定吸收薄膜的光学常数与厚度

介绍了一种同时利用椭偏仪和分光光度计精确测量薄膜光学常数的方法, 并详细比较了该方法与使用单一椭偏仪拟合结果的可靠性.采用可变入射角光谱型椭偏仪（VASE）表征了250—1700 nm波段辉光放电法沉积的类金刚石薄膜,研究发现当仅用椭偏参数拟合时,由于厚度与折射率、消光系数的强烈相关性,无法得到吸收薄膜光学常数的准确解.如果加入分光光度计测得的透射率同时拟合,得到的结果具有很好的惟一性.该方法无需设定色散模型即可快速拟合出理想的结果,特别适合于确定透明衬底上较薄吸收膜的光学常数. 关键词： 光学常数 光谱型椭偏仪 吸收薄膜 透射率     

椭偏与光度法联用精确测定吸收薄膜的光学常数与厚度

介绍了一种同时利用椭偏仪和分光光度计精确测量薄膜光学常数的方法, 并详细比较了该方法与使用单一椭偏仪拟合结果的可靠性.采用可变入射角光谱型椭偏仪（VASE）表征了250—1700 nm波段辉光放电法沉积的类金刚石薄膜,研究发现当仅用椭偏参数拟合时,由于厚度与折射率、消光系数的强烈相关性,无法得到吸收薄膜光学常数的准确解.如果加入分光光度计测得的透射率同时拟合,得到的结果具有很好的惟一性.该方法无需设定色散模型即可快速拟合出理想的结果,特别适合于确定透明衬底上较薄吸收膜的光学常数.     

光谱型椭偏仪精确表征非晶吸收薄膜的光学常数

采用光谱型椭偏仪(SE)和分光光度计分别测量了超薄类金刚石(DLC)薄膜和非晶硅(a-Si)薄膜的椭偏参数(y和D)和透射率T。由于薄膜的厚度与折射率、消光系数之间存在强烈的相关性,仅采用椭偏参数拟合,难以准确得到薄膜的光学常数。如果加入透射率同时进行拟合(以下简称SE+T法),可简单、快速得到薄膜的厚度和光学常数。但随机噪声、样品表面的轻微污染或衬底上任何小的吸收都可能影响SE+T法拟合的光学常数的准确性。因此将SE+T法和光学常数参数化法联用,实现DLC、a-Si薄膜光学常数的参数化,以消除测量数据中的噪声对光学常数的影响。结果显示,联用时的拟合结果具有更好的唯一性,而且拟合得到的光学常数变得平滑、连续且符合Kramers-Kronig(K-K)关系。这种方法特别适合于精确表征厚度仅为几十纳米的非晶吸收薄膜的光学常数。     

不同厚度溅射Ag膜的微结构及光学常数研究

用直流溅射法在室温Si基片上制备了4．9nm-189.0nm范围内不同厚度的Ag薄膜，并用X射线衍射及反射式椭偏光谱技术对薄膜的微结构和光学常数进行了测试分析。结构分析表明：制备的Ag膜均呈多晶状态，晶体结构仍为面心立方；随膜厚增加薄膜的平均晶粒心潮6．3nm逐渐增大到14．5nm；薄膜晶格常数均比标准值（0．40862nm)稍小，随膜厚增加，薄膜晶格常数由0．40585nm增大到0.40779nm。250nm-830nm光频范围椭偏光谱测量结果表明：与Johnson的厚Ag膜数据相比，我们制备的Ag薄膜光学折射率n总体上均增大，消光系数k变化复杂；在厚度为4．9nm-83.7nm范围内，实验薄膜的光学常数与Johnson数据差别很大，厚度小于33．3nm的实验薄膜k谱线中出现吸收峰，峰位由460nm红移至690nm处，且其对应的峰宽逐渐宽化；当膜厚达到约189nm时，实验薄膜与Johnson光学常数数据已基本趋于一致。     

光谱型椭偏仪精确表征非晶吸收薄膜的光学常数EI北大核心CSCD

采用光谱型椭偏仪(SE)和分光光度计分别测量了超薄类金刚石(DLC)薄膜和非晶硅(a-Si)薄膜的椭偏参数(y和D)和透射率T。由于薄膜的厚度与折射率、消光系数之间存在强烈的相关性,仅采用椭偏参数拟合,难以准确得到薄膜的光学常数。如果加入透射率同时进行拟合(以下简称SE+T法),可简单、快速得到薄膜的厚度和光学常数。但随机噪声、样品表面的轻微污染或衬底上任何小的吸收都可能影响SE+T法拟合的光学常数的准确性。因此将SE+T法和光学常数参数化法联用,实现DLC、a-Si薄膜光学常数的参数化,以消除测量数据中的噪声对光学常数的影响。结果显示,联用时的拟合结果具有更好的唯一性,而且拟合得到的光学常数变得平滑、连续且符合Kramers-Kronig(K-K)关系。这种方法特别适合于精确表征厚度仅为几十纳米的非晶吸收薄膜的光学常数。     

椭偏透射法测量氢化非晶硅薄膜厚度和光学参数

针对多角度椭偏测量透明基片上薄膜厚度和光学参数时基片背面非相干反射光的影响问题,报道了利用椭偏透射谱测量等离子增强化学气相沉积法(PECVD)制备的a-Si:H薄膜厚度和光学参数的方法,分析了基片温度T_s和辉光放电前气体温度T_g的影响.研究表明,用椭偏透射法测量的a-Si:H薄膜厚度值与扫描电镜(SEM)测得的值相当,推导得到的光学参数与其他研究者得到的结果一致.该方法可用于生长在透明基片上的其他非晶或多晶薄膜. 关键词： 椭偏测量 透射法 光学参数 氢化非晶硅薄膜     

UBMS技术制备DLC薄膜的光学常数椭偏分析

采用宽光谱变角度椭圆偏振仪对非平衡磁控溅射（UBMS）技术沉积的类金刚石（DLC）薄膜的光学常数进行了测量与分析。在建立模型时,根据DLC薄膜成膜特性,分析和调整了模型结构;综合考虑了表面粗糙度、薄膜与基底表面及界面因素对测试结果的影响,将表面层和界面层分离出来,并采用有效介质方法对它们的影响作了近似处理。结果表明：硅基底上采用UBMS技术制备DLC薄膜的椭偏数据,经该模型拟合后均方误差（MSE值）从37.39下降到4.061,提高了测量精度。     

椭偏法测厚及折射率的计算机解算

WJZ型多功能激光椭圆偏振仪是在JJY型分光计上附加激光椭偏装置而组成。兼有分光计和椭偏仪的功能,可用于测量不同基底上介质薄膜的厚度和折射率;除作为高校中级物理实验外,亦可用于材料表面光学参数的分析研究。但是,与原椭偏装置相配用的椭偏仪数据表,只能适用于K_q基底上生长的氧化锆薄膜标准试样,这就实际上限制了椭偏仪的使用范围;另一方面,即使对上述标准试样测量,所获数据往往与数据表提供的数值偏离甚大,直接影响实验效果。经过多次实际试验,本文分析了三相椭偏方程解的特性,讨论了不同条件下椭偏法测厚及折射率的计算机解算。     

椭偏光谱法研究溶胶-凝胶TiO2薄膜的光学常数

以钛酸丁酯为前驱体,采用溶胶-凝胶工艺成功制备了TiO₂薄膜.利用反射式椭圆偏振光谱仪测量了薄膜的椭偏参量Ψ和Δ,并用Cauchy模型对椭偏参数进行数据拟合,得到了薄膜的厚度和光学常数在380—800 nm的色散关系.用分光光度计测量了薄膜的反射率,并用干涉法计算薄膜的厚度;使用原子力显微镜观测了薄膜的表面微结构,分析讨论了不同退火温度处理的薄膜微结构与光学常数之间的关系.研究结果表明,Cauchy模型能较好地符合溶胶-凝胶TiO₂薄 关键词： 光学常数 2薄膜')" href="#">TiO₂薄膜 溶胶-凝胶 椭圆偏振     

Optical constants of 3,4,9,10-perylenetetracarboxylic dianhydride films on silicon and gallium arsenide studied by spectroscopic ellipsometry

The optical constants of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) films grown by organic molecular beam deposition on Si and GaAs substrates were determined in the spectral range from 300 nm to 1700 nm. All PTCDA layers deposited at room temperature with a low deposition rate of about 0.2 nm/min are uniaxial and strongly optically anisotropic. For the layers on Si a refractive index of 2.21 is derived in the substrate plane at 830 nm. The out-of-plane refractive index has a much lower value of 1.58. A similar anisotropy is observed for PTCDA layers on GaAs. The altogether lower refractive indices of 2.03 and 1.54, however, indicate a lower density of the films, which can be explained by the film structure. Received: 6 November 2000 / Accepted: 10 August 2001 / Published online: 17 October 2001     

Optical properties of dye-doped zirconia films by spectroscopic ellipsometry

The optical properties of zirconia films doped with rhodamine 6G and oxazine 725 by the sol-gel process were investigated using spectroscopic ellipsometry (SE). Accurate refractive index n and the extinction coefficient k were determined using a three-oscillator classical Lorentz model in the wavelength range of 300-800 nm. The derived refractive index of dye-doped films exhibited anomalous dispersion in the absorption region. Wavelength tunable output lasing action yellow and near-infrared wavelength region was achieved by DFB configuration using zirconia films doped with R6G and oxazine 725.     

Optical properties of Al-doped ZnO thin films by ellipsometry

Al-doped ZnO thin films (AZO) were prepared on Si (1 0 0) substrates by using sub-molecule doping technique. The Al content was controlled by varying Al sputtering time. The as-prepared samples were annealed in vacuum chamber at 800 °C for 30 min. From the XRD observations, it is found that all films exhibit only the (0 0 2) peak, suggesting that they have c-axis preferred orientation. The average transmittance of the visible light is above 80%. Spectroscopic ellipsometry was used to extract the optical constants of the films. The absorption coefficient and the energy gap were then calculated. The results show that the absorption edge initially blue-shifts and then red-shifts with increase of Al content.     

Optical properties of silver selenium indate films obtained by the method of pulse laser vaporization

The spectra of transmission and reflection are measured in the region of 0.4–2.5 μm on thin silver selenium indate films obtained by means of pulse laser vaporization. The magnitudes of the refractive index and absorption coefficient are calculated. The energies of interband transitions and the values of crystalline and spin-orbit splitting are determined. The experimental results for the AgInSe₂ films agree with the data for bulk crystals. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 4, pp. 512–514, July–August, 2000.     

Surface plasmon–exciton transition in ultra-thin silver and silver iodide films

Silver thin films in the thickness range 2–10 nm produced by thermal evaporation onto glass substrates were systematically iodized and carefully characterized by X-ray diffraction, atomic force microscopy (AFM) and optical absorption spectroscopy. While the uniodized films are X-ray amorphous in keeping with their quasi-continuous nature and 2D islanded structure, briefly iodized films showed characteristic beta AgI structure. Most interestingly, AFM of Ag films revealed uniform triangle-shaped embryos whose shape does not change appreciably upon iodization. Optical absorption spectra of uniodized Ag films show intense surface plasmon resonance (SPR) features with maxima at 440, 484 and 498 nm for the films of thicknesses 2, 5 and 10 nm, respectively, with 5 nm films showing properties characteristic of optimally matched dielectric and electronic properties of the substrate and sample, respectively. Finally, an interesting and unique SPR–exciton phase transition is observed as the ultra-thin films are progressively iodized. These Ag and AgI films could be promising candidates for plasmonic and nanophotonic applications. PACS 78.66.-w; 73.20.Mf; 71.35.Cc; 42.70; 68.37.Ps; 42.82.-m     

Optical characterization of thin thermal oxide films on copper by ellipsometry

A complete optical characterization in the visible region of thin copper oxide films has been performed by ellipsometry. Copper oxide films of various thicknesses were grown on thick copper films by low temperature thermal oxidation at 125 °C in air for different time intervals. The thickness and optical constants of the copper oxide films were determined in the visible region by ellipsometric measurements. It was found that a linear time law is valid for the oxide growth in air at 125 °C. The spectral behaviour of the optical constants and the value of the band gap in the oxide films determined by ellipsometry in this study are in agreement with the behaviour of those of Cu₂O, which have been obtained elsewhere through reflectance and transmittance methods. The band gap of copper oxide, determined from the spectral behaviour of the absorption coefficient was about 2 eV, which is the generally accepted value for Cu₂O. It was therefore concluded that the oxide composition of the surface film grown on copper is in the form of Cu₂O (cuprous oxide). It was also shown that the reflectance spectra of the copper oxide–copper structures exhibit behaviour expected from a single layer antireflection coating of Cu₂O on Cu. Received: 19 July 2001 / Accepted: 27 July 2001 / Published online: 17 October 2001     

激光照射下的低温氧化生成锗的纳米结构及其特性

在高精度椭偏仪（HPE）系统中，采用激光照射硅锗合金衬底助氧化的新方法，在SiO2层中生成锗的双纳米面结构；并在样品生长过程中，用HPE同步测量样品的纳米结构. 用Raman光谱仪测量样品的横断面，发现很强的PL发光谱峰. 用量子受限模型和改进的量子从头计算（UHFR）方法分析了PL光谱的结构. 关键词： 高精度椭偏仪 锗的纳米结构 PL光谱 量子受限     

Thermally tunable optical constants of vanadium dioxide thin films measured by spectroscopic ellipsometry

Smart materials with reversible tunable optical constants from visible to near-infrared wavelengths could enable excellent control over the resonant response in metamaterials, tunable plasmonic nanostructures, optical memory based on phase transition and thermally tunable optical devices. Vanadium dioxide (VO₂) is a promising candidate that exhibits a dramatic change in its complex refraction index or complex dielectric function arising from a structural phase transition from semiconductor to metal at a critical temperature of 70 °C. We demonstrated the thermal controllable reversible tunability of optical constants of VO₂ thin films. The optical/dielectric constants showed an abrupt thermal hysteresis which confirms clearly the electronic structural changes. Temperature dependence of dielectric constants as well as optical conductivity of sputtered VO₂ thin films was also reported and compared to previous theoretical and experimental reports.     

Optical study of BST films combining ellipsometry and reflectivity

Optical properties of plasma laser-deposited Ba_0.75Sr_0.25TiO₃ (BST) thin films have been investigated using variable angle spectroscopic ellipsometry (VASE) and near-normal spectroscopic reflectivity (NNSR) within a broad spectral range at room temperature. The samples prepared under various deposition conditions and the Si substrate coated with the structure SiO₂/TiO_x/Pt were measured. The X-ray diffraction, atomic force microscopy and alpha step measurement were used for characterization of the samples. A special attention was paid to study sample texture. Both sets of experimental data (VASE and NNSR) were fitted simultaneously to obtain the optical constants (e.g. complex refractive index) and thicknesses of the films. For modeling of the experimental data in the range of transparency the Cauchy and Urbach formulas were used. The direct fit procedure and the Cody-Lorentz model were applied around and below absorption edge. In the entire spectral range the reflectivity spectra were analyzed by Kramers-Kronig analysis. The data around the absorption edge were fitted using the single-wavelength method and the absorption edge features were found up about 3.5 eV. The platinum-coated Si substrate data were fitted as a semi-infinite medium using the Drude and Lorentz oscillators model. The structure model for optical characterization of the sample included not only the BST layers and substrate but also the intermix and surface roughness layers to achieve good agreement with experimental data. The substrate structure was modeled by a simple bulk with surface roughness.