Femtosecond pulsed laser deposition of Ge quantum dot growth on Si(1 0 0)-(2 × 1)

Ge quantum dots were grown on Si(1 0 0)-(2 × 1) by femtosecond pulsed laser deposition at various substrate temperatures using a femtosecond Ti:sapphire laser. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to analyze the film structure and morphology. The morphology of germanium islands on silicon was studied at different coverages. The results show that femtosecond pulsed laser deposition reduces the minimum temperature for epitaxial growth of Ge quantum dots to ∼280 °C, which is 120 °C lower than previously observed in nanosecond pulsed laser deposition and more than 200 °C lower than that reported for molecular beam epitaxy and chemical vapor deposition.     

Thermal decomposition mechanisms of tungsten nitride CVD precursors on Cu(1 1 1)

Chemisorption and thermal decomposition of metallorganic chemical vapor deposition precursors, (t-BuN)₂W(NHBu-t)₂, bis(tert-butylimido)bis(tert-butylamido)tungsten (BTBTT) and (t-BuN)₂W(NEt₂)₂, bis(tert-butylimido)bis(diethylamido)tungsten (BTBDT), on Cu(1 1 1) have been investigated by means of thermal desorption spectroscopy (TDS) and synchrotron-based X-ray photoelectron spectroscopy (SR-XPS) under ultrahigh vacuum conditions. The precursors remain intact upon chemisorption on Cu(1 1 1) at 100 K, and at 300 K both precursors decompose readily via the characteristic hydride abstraction/elimination pathways to produce two stable surface intermediates for each precursor. For BTBTT, one species is W(=NBu-t)₃ and the other is proposed to be a bridged amido complex, [(t-BuN)₂W(μ-NBu-t)]₂. In comparison, a W-imine complex and a W-N-C metallacycle are two intermediates produced from BTBDT. Annealing toward 800 K further decomposes the intermediates and the detectable desorption species are completely derived from the ligands. The desorption products from BTBTT include t-butylamine generated from α-H abstraction, isobutylene from γ-H elimination, acetonitrile from β-methyl elimination, and molecular hydrogen. In addition to these desorption species, BTBDT produces hydrogen cyanide and imine (EtN = CHMe) via β-H elimination, not possible with BTBTT due to the absence of β-H in the ligands. Eventually, tungsten nitrides incorporating oxygen atoms and a small amount of graphitic carbons are formed and the stoichiometry is approximated as WN_1.5O_0.1. Oxygen incorporation, driven by a large oxide formation enthalpy, is sensitively dependent on the moisture exposure in UHV environment.     

Epitaxial growth of titanium oxycarbide on MgO (0 0 1) substrates by pulsed laser deposition

Epitaxial TiC_xO_y thin films were grown on MgO (0 0 1) substrates by using pulsed laser deposition method. High-resolution X-ray diffraction and transmission electron microscopy were used to examine crystallinity and microstructure of epitaxial TiC_xO_y film on MgO. The chemical composition of the film is determined to be x ∼ 0.47 and y ∼ 0.69 by X-ray photoelectron spectroscopy. Atomic force microscopy revealed that the surface of TiC_xO_y film is very smooth with roughness of 0.18 nm. The resistivity of the TiC_xO_y film measured by four-point-probe method was about 137 μ Ω cm.     

Preparation of palladium film by coating photolysis process using KrF or ArF excimer laser

The preparation of palladium (Pd) films has been investigated using KrF or ArF laser irradiation on a Pd acetate (PdAc) coated substrate. A crystalline Pd film could be obtained by KrF laser irradiation (fluence = 15-40 mJ/cm²) but PdAc was found to remain in the film. An increase in the substrate temperature to 423 K decreased the inclusion of the unreacted precursor and produced a better crystallinity. An amorphous and uniform Pd film composed of very fine particles was found to be formed by this process under reduced pressure, which is probably due to the preferential ablation of the crystalline nuclei. ArF laser irradiation is more effective for decomposing the PdAc and for producing a Pd film with a better crystallinity and no (or smaller) organic inclusion.     

Growth of Au thin film on Cu-modified Si(1 1 1) surface

Miniaturizing of electronic devices requires that conductive elements maintain advanced electrical characteristics upon reducing their geometrical sizes. For gold, which is valued for its high electrical conductivity and stability against ambient conditions, creation of extra-thin films on silicon is hampered by formation of the quite complex Au/Si interface. In the present work, by forming a Si(1 1 1)5.55 × 5.55-Cu surface reconstruction prior to Au deposition we formed Au films with smoother surface morphology and higher surface conductivity compared to Au film grown on a pristine Si(1 1 1)7 × 7 surface. Scanning tunnelling microscopy and four-point probe measurements were used to characterize the growth mode of the Au film on a Si(1 1 1)5.55 × 5.55-Cu reconstruction at room temperature.     

Deposition and wettability of silver nanostructures on Si(1 0 0) substrate based on galvanic displacement reactions

A new route for silver electroless deposition on Si(1 0 0) substrate is developed based on the galvanic displacement process. The basic electroless bath contains NaF and AgNO₃ with different concentrations. The morphologies of electrolessly deposited silver nanostructures, including silver nanowires and nanoparticles, are strongly dependent on the electrolyte composition. Adding an excess dosage of polyvinylpyrrolidone into the basic electrolyte yields final silver films of porous structures composed by multitudinous Ag nanoparticles. The porous silver films possess the surface hydrophobic property after the modification with n-dodecanethiol. Unidirectional wetting and spreading of a water droplet are also demonstrated on the patterned porous Ag films.     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

Electron and lattice structure of ultra thin Ag films on Si(1 1 1) and Si(0 0 1)

We studied the low temperature (T ? 130 K) growth of Ag on Si(0 0 1) and Si(1 1 1) flat surfaces prepared by Si homo epitaxy with the aim to achieve thin metallic films. The band structure and morphology of the Ag overlayers have been investigated by means of XPS, UPS, LEED, STM and STS. Surprisingly a (√3 × √3)R30° LEED structure for Ag films has been observed after deposition of 2-6 ML Ag onto a Si(1 1 1)(√3 × √3)R30°Ag surface at low temperatures. XPS investigations showed that these films are solid, and UPS measurements indicate that they are metallic. However, after closer STM studies we found that these films consists of sharp Ag islands and (√3 × √3)R30°Ag flat terraces in between. On Si(0 0 1) the low-temperature deposition yields an epitaxial growth of Ag on clean Si(0 0 1)-2 × 1 with a twinned Ag(1 1 1) structure at coverage’s as low as 10 ML. Furthermore the conductivity of few monolayer Ag films on Si(1 0 0) surfaces has been studied as a function of temperature (40-300 K).     

High-resolution electron microscopy study of SiGeC thin films grown on Si(1 0 0) by laser-assisted techniques

PLIE was used for rapid crystallisation of a-SiGeC films deposited by LCVD on Si(1 0 0) substrates. HRTEM study of thin films grown with several laser energies shows that the combination of the two laser techniques gives an almost completely crystallised alloy, even for the lowest laser fluence. Island formation is observed below a certain threshold of fluence (about 450 mJ/cm²). In the case of the lowest energy (100 mJ/cm²) the material was partially crystallised (with the crystalline material being the predominant state), to a nanocrystalline alloy with a considerable amount of epitaxialy grown grains and with grain sizes of several tens of nanometers. Above the threshold of 450 mJ/cm² a rather smooth thin film is grown. The crystallisation is almost complete and the alloy is grown in an almost perfect epitaxial way.     

Characterization of cubic phase MgZnO/Si(1 0 0) interfaces

The microstructural properties of the Mg_xZn_1−xO/Si(1 0 0) interface were investigated using transmission electron microscopy (TEM) and chemical states of the heterostructure were studied by high resolution X-ray photoelectron spectroscopy (XPS). By analyzing the valence band spectra of thin Mg_xZn_1−xO/Si(1 0 0) heterostructures, the valence band offset between such Mg_0.55Zn_0.45O and Si(1 0 0) was obtained to be 2.3 eV. Using the cubic ternary thin films as insulators, metal-insulator-semiconductor (MIS) capacitors have been fabricated. Leakage current density lower than 3 × 10⁻⁷ A/cm² is obtained under the electrical field of 600 kV/cm by current-voltage (I-V) measurement. Frenkel-Poole conduction mechanism is the main cause of current leakage under high electrical field.     

The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE

Ultra thin films of pure silicon nitride were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma with a high content of nitrogen atoms. The effect of annealing of silicon nitride surface was investigated with core-level photoelectron spectroscopy. The Si 2p photoelectron spectra reveals a characteristic series of components for the Si species, not only in stoichiometric Si₃N₄ (Si⁴⁺) but also in the intermediate nitridation states with one (Si¹⁺) or three (Si³⁺) nitrogen nearest neighbors. The Si 2p core-level shifts for the Si¹⁺, Si³⁺, and Si⁴⁺ components are determined to be 0.64, 2.20, and 3.05 eV, respectively. In annealed sample it has been observed that the Si⁴⁺ component in the Si 2p spectra is significantly improved, which clearly indicates the crystalline nature of silicon nitride. The high resolution X-ray diffraction (HRXRD), scanning electron microscopy (SEM) and photoluminescence (PL) studies showed a significant improvement of the crystalline qualities and enhancement of the optical properties of GaN grown on the stoichiometric Si₃N₄ by molecular beam epitaxy (MBE).     

Nitrogen adsorption and thin surface nitrides on Cu(1 1 1) from first-principles

Experimental studies of nitrogen adsorbed on a Cu(1 1 1) surface show that the surface layer undergoes a reconstruction to form a pseudo-(1 0 0) structure. We use ab initio techniques to demonstrate the theoretical stability of this reconstructed surface phase over a range of conditions. We systematically investigate the chemisorption of N on the Cu(1 1 1) surface, from 0.06 to 1 ML coverage. A peculiar atomic relaxation of N atoms for 0.75 ML is identified, which results in the formation of a (metastable) “N-trimer cluster” on the surface. We have also investigated surface nitride formation, as suggested from experiments. A surface nitride-like structure similar to the reported pseudo-(1 0 0) reconstruction is found to be highly energetically favored. Using concepts from “ab initio atomistic thermodynamics”, we predict that this surface nitride exists for a narrow range of nitrogen chemical potential before the formation of bulk Cu₃N.     

Metal organic chemical vapor deposition of ultrathin ZrO2 films on Si(1 0 0) and Si(1 1 1) studied by electron spectroscopy

The growth of ultrathin ZrO₂ films on Si(1 0 0)-(2 × 1) and Si(1 1 1)-(7 × 7) has been studied with core level photoelectron spectroscopy and X-ray absorption spectroscopy. The films were deposited sequentially by chemical vapor deposition in ultra-high vacuum using zirconium tetra-tert-butoxide as precursor. Deposition of a > 50 Å thick film leads in both cases to tetragonal ZrO₂ (t-ZrO₂), whereas significant differences are found for thinner films. On Si(1 1 1)-(7 × 7) the local structure of t-ZrO₂ is not observed until a film thickness of 51 Å is reached. On Si(1 0 0)-(2 × 1) the local geometric structure of t-ZrO₂ is formed already at a film thickness of 11 Å. The higher tendency for the formation of t-ZrO₂ on Si(1 0 0) is discussed in terms of Zr-O valence electron matching to the number of dangling bonds per surface Si atom. The Zr-O hybridization within the ZrO₂ unit depends furthermore on the chemical composition of the surrounding. The precursor t-butoxy ligands undergo efficient C-O scission on Si(1 0 0), leaving carbonaceous fragments embedded in the interfacial layer. In contrast, after small deposits on Si(1 1 1) stable t-butoxy groups are found. These are consumed upon further deposition. Stable methyl and, possibly, also hydroxyl groups are found on both surfaces within a wide film thickness range.     

KrF excimer laser ablation of thin Cr film on glass substrate

Received: 5 October 1998 / Accepted: 14 December 1998 / Published online: 24 February 1999     

ZnO thin films on Si(1 1 1) grown by pulsed laser deposition from metallic Zn target

ZnO thin films with highly c-axis orientation have been fabricated on p-type Si(1 1 1) substrates at 400 °C by pulsed laser deposition (PLD) from a metallic Zn target with oxygen pressures between 0.1 and 0.7 mbar. Experimental results indicate that the films deposited at 0.3 and 0.5 mbar have better crystalline and optical quality and flatter surfaces than the films prepared at other pressures. The full width at half maximum (FWHM) of (0 0 0 2) diffraction peak decreases remarkably from 0.46 to 0.19° with increasing annealing temperature for the film prepared at 0.3 mbar. In photoluminescence (PL) spectra at room temperature, the annealed film at 700 °C exhibits a smaller ultraviolet (UV) peak FWHM of 108 meV than the as-grown film (119 meV). However, an enhanced deep-level emission is observed. Possible origins to above results are discussed.     

Formation of strontium template on Si(1 0 0) by atomic layer deposition

The formation of ordered Sr overlayers on Si(1 0 0) by Atomic Layer Deposition (ALD) from bis(triisopropylcyclopentadienyl) Strontium (Sr(C₅ⁱPr₃H₂)₂) and H₂O has been investigated. SrO overlayers were deposited on a 1-2 nm SiO₂/Si(1 0 0) substrate, followed by a deoxidation process to remove the SiO₂ layer at high temperatures. Auger electron spectroscopy, Rutherford backscattering spectrometry, spectroscopic ellipsometry, and low-energy electron diffraction were used to investigate the progress of both ALD and deoxidation processes. Results show that an ordered Sr/Si(1 0 0) surface with 2 × 1 pattern can be obtained after depositing several monolayers of SrO on Si using ALD followed by an anneal at 800-850 °C. The (2 × 1) ordered Sr/Si(1 0 0) surface is known to be an excellent template for the epitaxial growth of SrTiO₃ (STO) oxide. The present results demonstrate that ALD is a potential alternative to molecular beam epitaxy methods for the fabrication of epitaxial oxides on semiconductor substrates.     

Me-PTCDI thin film deposition on InSb(1 1 1)A

The evolution of N,N′-dimethylperylene-3,4,9,10-dicarboxyimide (Me-PTCDI) thin films formed by vapour deposition on InSb(1 1 1)A substrates has been studied by X-ray photoelectron spectroscopy (XPS), high-resolution electron energy loss spectroscopy (HREELS) and low energy electron diffraction (LEED). XPS studies of the Me-PTCDI covered surface indicate that no significant interaction occurs at sub-monolayer coverage when compared to multilayer Me-PTCDI films. HREELS studies suggest only a weak interaction as evidenced by very small changes in the frequencies of several molecular vibrational modes. LEED patterns show the Me-PTCDI overlayer adopts a structure commensurate with the underlying InSb(1 1 1)A substrate surface and that can be rationalised by van der Waals intermolecular energy calculations for the Me-PTCDI unit cell. The results are consistent with a weak interaction at the Me-PTCDI/InSb interface, the formation of the commensurate structure being sufficient to overcome the small energetic penalty associated with deviation from the calculated intermolecular interaction energy minimum.     

Structural and magnetic properties of evaporated Fe thin films on Si(1 1 1), Si(1 0 0) and glass substrates

We present experimental results on the structural and magnetic properties of series of Fe thin films evaporated onto Si(1 1 1), Si(1 0 0) and glass substrates. The Fe thickness, t, ranges from 6 to110 nm. X-ray diffraction (XRD) and atomic force microscopy (AFM) have been used to study the structure and surface morphology of these films. The magnetic properties were investigated by means of the Brillouin light scattering (BLS) and magnetic force microscopy (MFM) techniques. The Fe films grow with (1 1 0) texture; as t increases, this (1 1 0) texture becomes weaker for Fe/Si, while for Fe/glass, the texture changes from (1 1 0) to (2 1 1). Grains are larger in Fe/Si than in Fe/glass. The effective magnetization, 4πM_eff, inferred from BLS was found to be lower than the 4πM_S bulk value. Stress induced anisotropy might be in part responsible for this difference. MFM images reveal stripe domain structure for the 110 nm thick Fe/Si(1 0 0) only.     

Atomic structure of thin dysprosium-silicide layers on Si(1 1 1)

We report on scanning tunneling microscopy results of thin dysprosium-silicide layers formed on Si(1 1 1). In the submonolayer regime, both a and a 5 × 2 superstructure were found. Based on images taken at different tunneling conditions, a structure model could be developed for the superstructure. For one monolayer, a 1 × 1 superstructure based on hexagonal DySi₂ was observed, while several monolayers thick films are characterized by a superstructure from Dy₃Si₅.     

Heteroepitaxial thin film of iron phthalocyanine on Ag(1 1 1)

Ordering of submonolayer iron phthalocyanine (FePc) molecules deposited on Ag(1 1 1) was investigated using scanning tunneling microscopy. The room temperature deposition of FePc alone, without any annealing, results in no ordered overlayers. However, posterior annealing the substrate to 475 K leads to the formation of a two-dimensional oblique lattice with the lattice constants of 16.2 ± 0.3 Å and the angle of 78 ± 1° between them. The resulting FePc lattice is commensurate to the substrate lattice. In addition, the nearest neighbor distance in the lattice is significantly increased through a distinctive molecular orientation of the FePc molecules within the unit cell. The commensurate lattice with a large intermolecular distance is in sharp contrast to that observed from a close-packed square lattice that many other metallo-phthalocyanine molecules often self-assemble into. A possible reasoning behind this intriguing structure is discussed.