Magnetic and transport properties of Mn-doped Bi2Se3 and Sb2Se3

We report on the single crystal growth and thermoelectric and magnetic properties of Mn-doped Bi₂Se₃ and Sb₂Se₃ single crystals prepared by the temperature gradient solidification method. The composition and crystal structure were determined using electron probe microanalysis and θ–2θ powder X-ray diffraction studies, respectively. The lattice constants of several percent Mn-doped Bi₂Se₃ and Sb₂Se₃ were slightly smaller than those of the undoped sample due to the smaller Mn atomic radius (1.40 Å) than those of Bi (1.60 Å) and Sb (1.45 Å). Mn-doped Bi₂Se₃ and Sb₂Se₃ showed spin-glass and paramagnetic properties, respectively.     

Anomalous temperature dependence of magnetization in polycrystalline Fe65Ni35 alloy

Magnetization at 0.3 and 140 Hz (0–10 Oe) and magnetic relaxation measurements were carried out in detail in the temperature range between 4.2 and 300 K for a polycrystalline Fe₆₅Ni₃₅ alloy. The typical temperature T_g and the magnetic field H_g which correspond to the anomalous temperature in χ-T curves and inflection field in σ-H curves, respectively, are summarized and a H-T diagram is obtained. A strong magnetic relaxation is observed along the H_g-T line. The temperature dependence of H_g is discussed by the thermal activation of 180° domain wall which is pinned strongly by the antiferromagnetic-like clusters below T_g. It is find that H _g is a linear function of T .     

Electrical conduction and optical properties of amorphous (Sb2Se3)100−xSnx thin films

The variation of DC electrical conductivity and the optical properties of thermally evaporated a- (Sb₂Se₃)_100−xSn_x thin films with temperature have been studied. It is found that the thermal activation energy decreases, while the optical gap first increases (up to x=1) and then decreases, with the increase in Sn content. These results have been explained by taking into consideration the structural modifications induced by the incorporation of Sn into the parent alloy. The variation in the conductivity prefactor (σ_o) with Sn addition indicates a change in the dominant conduction transport mechanism from extended states to localized states. An experimental correlation between the activation energy and the pre-exponential factor has been observed, indicating the validity of Meyer–Neldel rule in the studied samples.     

Electrical conduction and critical magnetic field for superconductivity of a Nb3Se4 single crystal

With respect to the quasi-one dimensionality of single crystals of Nb₃Se₄, the electrical resistivity from 1.3 to 320 K and the critical magnetic field for superconductivity are measured. The resistivity along the Nb-chain direction is represented as a sum of a temperature independent and an intrinsic temperature dependent term. The temperature dependence of the intrinsic resistivity subjects to T³ form between 10 and 80 K above which it tends to a T linear form. The critical magnetic field is proportional to the temperature difference from the transition temperature. Its dependence is well fitted by the elliptical fluxoid model of Ginzburg-Landau theory. The ratio of the parallel and the perpendicular to the c-axis is 5.7.     

Optical and electrical properties of single Sb2Se3 nanorod

In this report, methods of solvothermal synthesis of Sb₂Se₃ nanorods from a single-source precursor Sb[Se₂P(O ⁱPr)₂]₃ were demonstrated. The synthesized Sb₂Se₃ nanorods were expected to have new optical and electrical properties. With the electron beam (E-beam) lithography and focus ion beam (FIB) techniques, we achieved immobilization and positioning of a single Sb₂Se₃ nanorod on a patterned template. By using the confocal Raman microscope and two-point-contact electrical measurement methods, we obtained optical and electrical characteristics from a single Sb₂Se₃ nanorod.     

Structural studies and physical properties of novel Sm-doped Sb2Se3 nanorods

Sm³⁺ doped Sb₂Se₃ nanorods were synthesized by the co-reduction method at 180 °C and pH=12 for 48 h. Powder XRD patterns indicate that the Sm_xSb_2−xSe₃ crystals (x=0.00-0.05) are isostructural with Sb₂Se₃. The cell parameters increase for Sm³⁺ upon increasing the dopant content (x). SEM images show that doping of Sm³⁺ ions in the lattice of Sb₂Se₃ results in nanorods. High-resolution transmission electron microscopic (HRTEM) studies reveal that the Sm_0.05Sb_1.95Se₃ is oriented in the [1 0 −1] growth direction. UV-vis absorption reveals mainly electronic transitions of the Sm³⁺ ions in doped nanomaterials. Emission spectra of doped materials, in addition to the characteristic red emission peaks of Sb₂Se₃, show other emission bands originating from f-f transitions of the Sm³⁺ ions. The electrical conductance of Sm-doped Sb₂Se₃ is higher than undoped Sb₂Se₃ and increase with temperature.     

Crystallization kinetics in new Sb14As29Se52Te5 amorphous glass

Differential scanning calorimetry (DSC) under non-isothermal conditions is used to study the crystallization kinetics of Sb₁₄As₂₉Se₅₂Te₅ chalcogenide glass. In addition, two approaches are used to analyze the dependence of glass transition temperature (T_g) on the heating rate (α). One is empirical linear relationship between (T_g) and ln(α). The second approach is the use of straight line vs. 1/T_g for the evaluation of the activation energy for glass transition. The phases at which the alloy crystallizes after the thermal treatment have been identified by using X-ray diffraction. The diffractogram of the transformed material shows the presence of some crystallites of As, Te, AsSb, As₂Se₃, Sb₂Se₃ and AsSe_.5Te_.5 in the residual amorphous matrix.     

Strong polarization dependence and selenium lone-pairs in the photoemission spectra of Sb2Se3

The photoemission energy distribution curves (EDC's) of crystalline and amorphous Sb₂Se₃ were measured in the photon energy range hv=7 to 20 eV using polarized radiation from a synchroton storage ring. The EDC's show that the six electrons per Sb₂Se₃ molecule, attributed primarily to the selenium p-pairs, are clearly separated from the remaining part of the valence band of crystalline Sb₂Se₃. The optical transitions from these states occur with matrix elements strongly dependent on the orientation of the electrical vector of the polarized radiation as a result of crystal field effects. Model densities of states are constructed for both crystalline and amorphous Sb₂Se₃.     

Preparation and characterization of electrodeposited Sb2Se3 thin films from non-aqueous media

Semiconducting Sb₂Se₃ thin films have been prepared onto the stainless steel and fluorine doped tin oxide coated glass substrates from non-aqueous media using an electrodeposition technique. The electrodeposition potentials for different bath compositions and concentrations of solution have been estimated from the polarization curves. SbCl₃ and SeO₂ in the volumetric proportion as 1:1 with their equimolar solution concentration of 0.05 M form good quality films. The films are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and optical absorption techniques. The SEM studies show that the film covers the total substrate surface with uneven surface morphology. The XRD patterns of the films obtained by varying compositions and concentrations show that the as-deposited films are polycrystalline with relatively higher grain size for 1:1 composition and 0.05 M concentration. The optical band gap energy for indirect transition in Sb₂Se₃ thin films is found to be 1.195 eV.     

Magnetic and electric properties of antimony selenide (Sb2Se3) crystals

The magnetic susceptibility in the three principal crystallographic directions, and the electrical conductivity and thermoelectric power parallel and perpendicular to the basal plane of Sb₂Se₃ single crystals, have been measured over the temperature range 100–550 K. The different results obtained from the magnetic and electric studies have been accounted for on the basis of non-stoichiometry of the compound and localized lone electrons. A hopping mechanism in the higher temperature region simultaneously with impurity excitation is suggested.     

Negative magnetoresistance and nonlinear conduction in Ti0.99V0.01Se2

Both magnetic and electric field dependences of transport coefficients are investigated on the layered material Ti_1-xV_xSe₂ (x = 0.01). In contrast to semimetallic TiSe₂, the resistivity of the V-doped samples increases with decrease of temperature even in the low temperature region. At liquid helium temperatures it is found that the resistivity is strongly dependent on electric field strength. The behaviour of the nonlinear conduction is similar to that observed in 1T-TaS₂. In the low field (Ohmic) region anomalously large negative mangetoresistance is observed, Δ?/?₀ = -80% at 1.6 K and 60 KOe. Moreover the Hall coefficient is also found to depend on both magnetic and electric fields. All the experimental data suggests that mobile carriers are excited by the applied fields.     

Electrical transport in a-As2Se3 containing metallic impurities

Significant changes of the hole drift mobility are observed in a-As₂Se₃ containing concentrations less than ～ 10²⁰ cm^?3 of metallic impurities (Mn, Fe, Ni, Cu, Zn, Ga, In, Tl and Na). Depending upon metal concentration the results suggest a modification of the hopping transport channel in Ga, In and Tl doped samples and the buildup of new traps that are either isoenergetic with the intrinsic trap population (Tl, Ga, In, Cu) or lie deeper in the gap (Mn, Fe, Ni, Cu). Trap-limited hopping transport provides a consistent explanation of the experimental data.     

Electrodeposition of Sb2Se3 on indium-doped tin oxides substrate: Nucleation and growth

The mechanisms related to the initial stages of the nucleation and growth of antimony selenide (Sb₂Se₃) semiconductor compounds onto the indium-doped tin oxides (ITO) coated glass surface have been investigated using chronoamperometry (CA) technique. The fabrication was conducted from nitric acid bath containing both Sb³⁺ and SeO₂ species at ambient conditions. No underpotential deposition (UPD) of antimony and selenium onto ITO substrate was observed in the investigated systems indicating a weak precursor-substrate interaction. Deposition of antimony and selenium onto ITO substrate occurred with large overvoltage through 3D nucleation and growth mechanism followed by diffusion limited growth. FE-SEM and XRD results show that orthorhombic phase Sb₂Se₃ particles with their size between 90 and 125 nm were obtained and the atomic ratio for antimony and selenium was 2:2.63 according to the EDX results.     

Study of molecular antimony: Sb4 and Sb2 in solid neon

Electronic absorption and laser-induced fluorescence spectra of Sb₂ in solid Ne matrix are observed and examined. The Raman spectrum of Sb₄ is also recorded and two of its three ground state vibrational fundamental vibrations are determined.     

Ge20Sb15Se65薄膜的热致光学特性变化研究

采用磁控溅射法制备了Ge₂₀Sb₁₅Se₆₅薄膜, 研究热处理温度(150—400 ℃)对薄膜光学特性的影响. 通过分光光度计、X射线衍射仪、显微拉曼光谱仪对热处理前后薄膜样品 的光学特性和微观结构进行了表征, 并根据Swanepoel方法以及Tauc公式分别计算了薄膜折射率色散曲线和光学带隙等参数. 结果表明当退火温度(T_a)小于薄膜的玻璃转化温度(T_g)时,薄膜的光学带隙(E_g^opt)随着退火温度的增加由1.845 eV上升至1.932 eV, 而折射率由2.61降至2.54; 当退火温度大于薄膜的玻璃转化温度时,薄膜的光学带隙随退火温度的增加由1.932 eV降至1.822 eV, 折射率则由2.54增至2.71. 最后利用Mott和Davis提出的非晶材料由非晶到晶态的结构转变模型对结果进行了解释, 并通过薄膜XRD和Raman光谱进一步验证了结构变化是薄膜热致变化的重要原因. 关键词： 20Sb₁₅Se₆₅薄膜')" href="#">Ge₂₀Sb₁₅Se₆₅薄膜 热处理 光学带隙 折射率     

Electrical conduction in Fe2O3 and Cr2O3

The influence of some impurities on the conduction properties of Cr₂O₃ and Fe₂O₃ are examined and contrasted. A mechanism is proposed to account for the effect of Ti in Cr₂O₃.     

Low temperature photoconductivity of ZnIn2Se4 and CdIn2Se4

The photoconductivity of ZnIn₂Se₄ and CdIn₂Se₄ single crystals has been studied at 4.2 K. The spectra are compared to reflectivity spectra and relevant structures are interpreted in terms of interband transitions. The absence of excitonic transitions is discussed in connection with the crystalline perfection.     

Electrical conduction in undoped and yttrium-doped Na2SO4

The electrical conductivity of undoped and yttrium-doped Na₂SO₄ has been measured by the ac two-terminal method at temperatures between 540 and 1075 K in air or in SO₂O₂SO₃ atmospheres. At high temperatures such as 1075 K, doping of 1.7 at% yttrium (Y) decreases the conductivity, which indicates that the Frenkel defect of sodium ions is pre-dominant in Na₂SO₄ and that the mobility of the interstitial ions is higher than that of the vacancies. However, the vacancy concentration is high enough to increase the conductivity in the samples doped with 2.0–3.8 at% Y. A further addition of yttrium decreases the electrical conductivity again, suggesting the appeareance of defect interactions such as ordering or clustering of the defects. The electrical conductivity of the undoped and the 4 at% Y-doped Na₂SO₄ is independent of the SO₃ partial pressure. The complex impedance analysis shows that the grain boundary resistance increases with sintering time. This is probably caused by a decrease in the contact area between grains during sintering.     

Effect of heat treatment on the optical and electrical transport properties of Ge15Sb10Se75 and Ge25Sb10Se65 thin films

The effect of heat treatment on the optical and electrical properties of Ge₁₅Sb₁₀Se₇₅ and Ge₂₅Sb₁₀Se₆₅ thin films in the range of annealing temperature 373-723 K has been investigated. Analysis of the optical absorption data indicates that Tauc's relation for the allowed non-direct transition successfully describes the optical processes in these films. The optical band gap (E_g^opt.) as well as the activation energy for the electrical conduction (ΔE) increase with the increase of annealing temperature (T_a) up to the glass transition temperature (T_g). Then a remarkable decrease in both the E_g^opt. and ΔE values occurred with a further increase of the annealing temperature (T_a>T_g). The obtained results were explained in terms of the Mott and Davis model for amorphous materials and amorphous to crystalline structure transformations. Furthermore, the deduced value of E_g^opt. for the Ge₂₅Sb₁₀Se₆₅ thin film is higher than that observed for the Ge₁₅Sb₁₀Se₇₅ thin film. This behavior was discussed on the basis of the chemical ordered network model (CONM) and the average value for the overall mean bond energy 〈E〉 of the amorphous system Ge_xSb₁₀Se_90−x with x=15 and 25 at%. The annealing process at T_a>T_g results in the formation of some crystalline phases GeSe, GeSe₂ and Sb₂Se₃ as revealed in XRD patterns, which confirms our discussion of the obtained results.     

Electrical conduction of a quasi-one dimensional Nb3S4 single crystal

With respect to single crystals of Nb₃S₄ the electrical resistivity from 2.8 K to 300 K and the magnetoresistance at 4.2 K were measured. The resistivity is represented as a sum of a temperature independent and an intrinsic temperature dependent component. The temperature dependence of the intrinsic resistivity subjects to T₃ form between 7 and 50 K above which it becomes weaker than T₃ approaching a T linear from. This behaviour is discussed in terms of the electron-electron Umklapp scattering. The ratio of the resistivities perpendicular and parallel to the c-axis takes about 15 between room temperature and 50 K. The transverse magnetoresistance is proportional to the magnetic field. The longitudinal magnetoresistance is too small to be measured.