Atomically flat GaMnN by diffusion of Mn into GaN()

The interaction of Mn thin films on atomically flat GaN() has been investigated by Scanning Tunneling Microscopy (STM) and Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS). GaN surfaces prepared by repeated sputtering/annealing cycles show various reconstructions but essentially the 6×6 one. A high density of small islands (height 0.6 nm, diameter 5 nm) nucleates upon deposition of 0.3 ML Mn. Upon annealing at 575 C, these islands coalesce into larger islands (height 4 nm, diameter 50 nm) between which the GaN surface is visible. Atomically resolved STM images between the islands show the (3×3) reconstruction of GaN. Annealing the sample further to 675 C leads to the restoration of a bare GaN surface. ToF-SIMS reveals that Mn diffused into the bulk of the sample.     

A novel deposition method to grow ZnO nanorods: Spray pyrolysis

ZnO layers were deposited by chemical spray pyrolysis (CSP) using zinc chloride aqueous solutions onto indium tin oxide (ITO) glass substrates at growth temperatures in the region of 400–580 C. The layers were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and low-temperature () photoluminescence (PL) measurements. The flat film of ZnO obtained at 400 C evolves to a structured layer by raising the temperature up to 500 C. Deposition around 550 C and above results in a layer comprising well-shaped hexagonal ZnO nanorods with diameter of 100–150 nm and length of up to 1 micron. XRD shows strong c-axis orientation of ZnO being in accordance with the SEM study. Deposition of nanorods was successful using ITO with grain size around 100 nm, whereas on fine-grained ITO (grain size < 50 nm) with smooth surface fat crystals with diameter up to 400 nm and length of about 300 nm were formed. Sharp near band edge (NBE) emission peaks centered at 3.360 and 3.356 eV dominated the PL spectra of ZnO at , originating from the exciton transition bound to neutral donors. PL and XRD results suggest that ZnO rods prepared by spray pyrolysis are of high optical and crystalline quality.     

Atypical grain boundaries in ZnO layers deposited on sapphire by rf magnetron sputtering on (0001) sapphire

The crystalline quality of ZnO is investigated, in thin films prepared by RF magnetron sputtering on c-plane sapphire. The ZnO layers exhibit a columnar growth and the average column diameter depends on the deposition temperature. Along the [] zone axis of sapphire, the diffraction pattern exhibits two zone axis patterns; the central rows belong to the two zones, with the 0002n spots clearly underlined by the overlap. On each part, the two inner rows belong to the [] zone and the next two to the [] zone. Therefore, the two main epitaxial relationships in mismatched growth of wurtzite structures coexist in these layers, and adjacent columns are rotated, with respect to one other, by 90 around the [0001] direction. In cross section observations, the interface between two grains is abrupt, but it is not easy to determine its atomic structure. Observations in planar view show that although the long range rotation between grains is in agreement with the theoretical epitaxial relationships, the local angles oscillate between 27 and 32. This discrepancy is explained by the formation of grain boundaries which are found to follow the coincidence site lattice rules which make them settle into minimal energy configurations.     

Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogen

Thin films of GaN with the V/III≈10 ratio were grown by low-pressure metal organic vapour phase epitaxy (LP-MOVPE) using N₂ and Dimethylhydrazine (DMHy) as a carrier gas and nitrogen precursor, respectively. For the growth temperatures in the range from 550 to 690 C the GaN layers exhibited good surface morphology. In the temperature range from approximately 550 to 610 C, the growth rate increases with increasing temperature, characteristic of the process limited by surface kinetics with the activation energy of approximately 36 kcal/mol. For the temperatures between 620 and 690 C, the growth rate was nearly independent of temperature, which is indicative of a mass transport limited growth. The activation energy was about 4.6 kcal/mol. Micro Raman spectroscopy revealed a significant relaxation of the selection rules for the scattering by the optical phonons in the films grown at lower temperatures. Variation of the intensity ratio for and E₁ phonon modes has been attributed to the changes in the structural quality of the films grown at different temperatures.     

Tree-level contributions to the rare decays , , and in the Standard Model

The tree-level contributions to the rare decays , , and are analyzed and compared to those occurring in , , and . It is shown that these purely long-distance contributions, arising from the exchange of a charged lepton, can be significant in B⁺ decays for an intermediate τ, potentially blurring the distinction between the modes used to extract B⁺→τ⁺ν_τ and those used to probe the genuine short-distance and FCNC transitions. Numerically, the tree-level contributions are found to account for 98%, 12% and 14% of the total , , and rates, respectively.     

Atomic layer deposition and characterization of Ga-doped ZnO thin films

Low-resistivity n-type ZnO thin films were grown by atomic layer deposition (ALD) using diethylzinc (DEZ) and H₂O as Zn and O precursors. ZnO thin films were grown on c-plane sapphire (c- Al₂O₃) substrates at 300 C. For undoped ZnO thin films, it was found that the intensity of ZnO () reflection peak increased and the electron concentration increased from 6.8×10¹⁸ to 1.1×10²⁰ cm⁻³ with the increase of DEZ flow rate, which indicates the increase of O vacancies () and/or Zn interstitials (Zn_i). Ga-doping was performed under Zn-rich growth conditions using triethylgallium (TEG) as Ga precursor. The resistivity of 8.0×10⁻⁴ Ω cm was achieved at the TEG flow rate of 0.24 μmol/min.     

Search for the rare decays , , and

Rare decay modes , J/ψ→D⁻π⁺+c.c., and are searched for using events collected with the BESII detector at the BEPC. No signal above background is observed. We present upper limits on the branching fractions of , B(J/ψ→D⁻π⁺)<7.5×10⁻⁵, and at the 90% confidence level.     

Polarized neutron scattering studies of the kagomé lattice antiferromagnet

We report polarized neutron scattering studies of spin-wave excitations and spin fluctuations in the lattice antiferromagnet KFe₃(OH)₆(SO₄)₂ (jarosite). Inelastic polarized neutron scattering measurements at 10 K on a single crystal sample reveal two spin gaps, associated with in-plane and out-of-plane excitations. The polarization analysis of quasi-elastic scattering at 67 K shows in-plane spin fluctuations with XY symmetry, consistent with the disappearance of the in-plane gap above the Néel temperature . Our results suggest that jarosite is a promising candidate for studying the 2D XY universality class in magnetic systems.     

Structural and electronic behavior of Sr2GdRuO6 complex perovskite

We report experimental and theoretical study of crystallographic lattice and electronic structure of Sr₂GdRuO₆ complex perovskite, which is used as precursor in the fabrication process of superconducting ruthenocuprate RuSr₂GdCu₂O₈. Samples were produced by the standard solid state reaction. Rietveld refinement of experimental X-ray diffraction patterns shows that material crystallizes in a monoclinic structure, which belongs to the P2₁/n (#14) space group, with lattice parameters , , , and tilt angle β=90.258. Calculations of electronic structure were performed by the density functional theory. The exchange and correlation potentials were included through the LDA+U approximation. Density of states (DOS) study was carried out considering the two spin polarizations. Results show Gd are majority responsible for the magnetic character in this material, but Ru contribution is also relevant because d-orbital is closer to Fermi level. Theoretical results evidence that Sr₂GdRuO₆ material behaves as a magnetic semiconductor, with 20μ_B effective magnetic moment.     

Theoretical structure and surface energy of the reconstructed {01.2} form of calcite (CaCO3) crystal

Two different reconstructions of the (01.2) face (Ca or CO₃ terminated) of calcite (CaCO₃) were studied: (i) R1 reconstruction: the outermost layer is based on the [0 1 0] × 1/3[2 1 1] rectangular mesh, which is symmetrical with respect to the c glide plane of the crystal, thus fulfilling the 2D symmetry of the face and (ii) R2 reconstruction: the outermost layer is based on a lozenge shaped mesh that does not respect the 2D symmetry of the face.The , , and slabs geometry optimizations of calcite (CaCO₃) were performed either at DFT level or by using empirical potentials; the results obtained with these two different calculation methodologies are in good agreement. With respect to their arrangement in the bulk, the CO₃ groups of the outermost layer are significantly rotated about the crystallographic a-axis and about the normal to the 01.2 plane; further, the thickness of the outermost layer is significantly lower than that of the underneath ones.The surfaces energies (γ) at 0 K, for relaxed and unrelaxed , , and faces, were determined either at DFT level or by using empirical potentials. Independently of the method of calculation employed, the stability order of the relaxed faces is < < < . Concerning the unrelaxed faces, whose energies were evaluated by using empirical potentials only, the stability order is instead < < < ; such different ordering shows the importance of geometry relaxation in the calculation of the surface energy. The values of the relaxed surface energies are , , and erg/cm².     

Epitaxial growth of 4H–SiC{0001} and reduction of deep levels

Homoepitaxial growth of 4H–SiC{0001} by hot-wall chemical vapor deposition (CVD) and characterization of deep levels in both n- and p-type epilayers have been investigated. On 4 off-axis 4H–SiC(0001), formation of macrosteps can be reduced by decreasing the C/Si ratio during CVD, though the growth condition leads to the increase in nitrogen incorporation. The 4H–SiC() face is promising, owing to its very smooth surface morphology even on 4 off-axis substrates and to its superior quality of the oxide/SiC interface. Deep level transient spectroscopy measurements in the wide temperature range from 100 K to 820 K on both n- and p-type 4H–SiC epilayers have revealed almost all the deep levels located in the whole energy range of the bandgap. Thermal annealing at 1350–1700 C of epilayers has resulted in reduction of deep level concentrations by one order of magnitude.     

Structure of light hypernuclei

The structure of light hypernuclei with strangeness S=−1 and −2 is investigated with the microscopic cluster model and the Gaussian expansion method (GEM). We emphasize that the cluster picture as well as the mean-field picture is invaluable to understand the structure of Λ hypernuclei, Σ hypernuclei and double Λ hypernuclei. A variety of aspects of Λ hypernuclei is demonstrated through a systematic study of p-shell hypernuclei (,, , , , , ) and sd-shell ones (, ): for example, the appearance of genuine hypernuclear states with new spatial symmetry which cannot be seen in ordinary nuclei, the glue-like role of the Λ particle which shrinks the size of nuclear core and thus reduces the B(E2) value, and the halo and skin structures in and etc. The typical light hypernucleus is thoroughly investigated, including its production, structure and decay. Precise three-body and four-body calculations of , and using GEM provide important information on the spin structure of the underlying ΛN interaction, by comparing with recent experimental data from γ-ray hypernuclear spectroscopy. The Λ–Σ coupling effect is studied in and . The binding mechanism of is discussed together with the possible existence of , emphasizing the fact that the study of is useful for extracting information on the ΣN interaction differing from that from . A systematic study of double-Λ hypernuclei, constrained by the NAGARA data () within a four-body cluster model indicates that the recently observed Demachi–Yanagi event can be interpreted as the 2⁺ state of . The effect of hyperon mixing in and is investigated using one-boson-exchange potentials and quark-cluster-model interactions for the S=−2 sector. A close relation between nuclear deep hole states and hypernuclei is discussed, emphasizing the selection rule for fragmentation of the s-hole in light nuclei, which is promising for understanding the production mechanism of double-Λ and twin-Λ hypernuclei via Ξ-atomic capture.     

Absolute photoionization cross sections with ultra-high energy resolution for Ar, Kr, Xe and N2 in inner-shell ionization regions

The high-resolution absolute photoionization cross sections for Ar, Kr, Xe and N₂ in the inner-shell ionization region have been measured using a multi-electrode ion chamber and monochromatized synchrotron radiation. The energy ranges of the incident photons for the target gases were as follows: Ar: 242–252 eV (2p Rydberg excitation), Kr: 1650–1770 eV (near the 2p ionization thresholds), Xe: 665–720 eV (near the 3d ionization thresholds) and 880–1010 eV (near the 3p ionization thresholds), N₂: 400–425 eV (N 1s excitation and ionization). It is the first time to measure the absolute ionization cross sections of Ar, Kr, Xe and N₂ over the present energy ranges with the energy resolution of over 10,000. The natural lifetime widths of , , and resonances for Ar, resonance for Xe, and resonance for N₂ have been obtained based on the cross sections determined. The ionization energies into the Ar⁺ (), Ar⁺ () and Xe⁺ () ionic states are also determined using the Rydberg formula.     

Single transverse-spin asymmetry in very forward and very backward neutral particle production for polarized proton collisions at

In the 2001–2002 running period of the Relativistic Heavy Ion Collider (RHIC), transversely polarized protons were accelerated to 100 GeV for the first time, with collisions at . We present results from this run for single transverse-spin asymmetries for inclusive production of neutral pions, photons and neutrons of the energy region 20–100 GeV for forward and backward production for angles between 0.3 mrad and 2.2 mrad with respect to the polarized proton direction. An asymmetry of was observed for forward neutron production, where the errors are statistical and systematic, and the scale error is from the beam polarization uncertainty. The forward photon and π⁰, and backward neutron, photon, and π⁰ asymmetries were consistent with zero. The large neutron asymmetry indicates a strong interference between a spin–flip amplitude, such as one pion exchange which dominates lower energy neutron production, and remaining spin–non-flip amplitudes such as reggeon exchange.     

Optical–optical double resonance spectroscopy of the transition of CaOH

The state of CaOH was investigated using optical–optical double resonance spectroscopy. A combined least-squares fit of the double resonance transition data along with optical transition data and the millimeter-wave pure rotational data of the state was performed using an effective Hamiltonian. The spin–rotation constant was determined for the state for the first time. An analysis of these constants showed that the Ca–O bond length and spin–rotation parameter of the state have the smallest values of all the observed ²Σ⁺ states of CaOH. This evidence suggests the assignment of the state as arising from a Ca⁺ atomic orbital of mainly 5sσ character. This atomic orbital assignment was shown to be consistent with both previous work on CaF and recent theoretical calculations on CaOH.     

Double-quantum NMR spectroscopy of P species submitted to very large CSAs

We introduce an original pulse sequence, , which is a block super-cycled sequence employing as basic element a π pulse sandwiched by ‘window’ intervals. This homonuclear dipolar recoupling method allows the efficient excitation of double-quantum coherences between spin-1/2 nuclei submitted to very large chemical shift anisotropy. We demonstrate that this technique can be employed in double-quantum ↔ single-quantum ³¹P homonuclear correlation experiment at high magnetic field (B₀  14 T) and high MAS frequencies (ν_R  30 kHz). The performances of are compared to those of the double-quantum recoupling methods, such as BABA and bracketed fp-RFDR, which were already employed at fast MAS rates. The sequence displays a higher robustness to CSA and offset than the other existing techniques.     

Epitaxial Heusler alloy films on GaAs(0 0 1) substrates

We present results on fabrication, and structural and electrical properties of single-crystal heterostructures grown by molecular beam epitaxy. The exact stoichiometry of the Heusler alloy films can be achieved for almost lattice matched films. As evidenced by high-resolution X-ray diffraction, transmission electron microscopy, and resistivity measurements, we find an optimum growth temperature of , to obtain ferromagnetic layers with high crystal and interface perfection as well as high degree of atomic ordering. .     

The magnetocaloric effect and low temperature specific heat of SmNi

The magnetocaloric effect (MCE) in a magnetic SmNi sample was evaluated from magnetization and heat capacity measurements. The MCE phenomena in the vicinity of magnetic phase transitions in terms of magnetic entropy change, , and adiabatic temperature change, , are reported. Isothermal magnetization measurements at several temperatures around the transition were carried out and used for versusT calculations. A similar dependence of the magnetic entropy change was evaluated from heat capacity C_p(T) measurements under zero field and 5 T. The SmNi system provides magnetic refrigerants that induce an adiabatic cooling of about during the magnetization process with a field of 5 T in the temperature range of 35-45 K. The temperature dependence of C_p(T) is analyzed in terms of the magnetic and the lattice contributions.     

Symmetry-adapted tight-binding calculations of the totally symmetric A1 phonons of single-walled carbon nanotubes and their resonant Raman intensity

The atomistic calculations of the physical properties of perfect single-walled carbon nanotubes based on the use of the translational symmetry of the nanotubes face increasing computational difficulties for most of the presently synthesized nanotubes with up to a few thousand atoms in the unit cell. This difficulty can be circumvented by use of the helical symmetry of the nanotubes and a two-atom unit cell. We present the results of such symmetry-adapted tight-binding calculations of the totally symmetric A₁ phonons (the RBM and the G-band modes) and their resonant Raman intensity for several hundred nanotubes.In particular, we show that (1) the frequencies and the resonant Raman intensity of the RBM and the G-band modes show diameter and chirality dependence and family patterns, (2) the strong electron– phonon interactions in metallic nanotubes lead to Kohn anomalies at the zone center, (3) the G-band consists of a subband due to phonons of semiconducting tubes centered at 1593 cm⁻¹, a subband of phonons at 1570 cm⁻¹, and a subband of phonons of metallic tubes at 1540 cm⁻¹. The latter prediction confirms previous theoretical results but disagrees with the commonly adopted assignment of the G-band features.     

Measurement of at

We present a measurement of the cross section for Z boson production times the branching fraction to tau lepton pairs in collisions at . The measurement is performed in the channel in which one tau lepton decays into a muon and neutrinos, and the other tau lepton decays hadronically or into an electron and neutrinos. The data sample corresponds to an integrated luminosity of 1.0 fb⁻¹ collected with the DØ detector at the Fermilab Tevatron Collider. The sample contains 1511 candidate events with an estimated 20% background from jets or muons misidentified as tau leptons. We obtain , which is consistent with the standard model prediction.