Epitaxial growth of Nb3Ge on Nb3Ir and Nb3Rh

This is a report on a cooperative research carried out in Stanford University to investigate the possibility of using epitaxy to prepare the high T_c superconductor Nb₃Ge in an A15 crystalline structure at the 3:1 stoichiometry.Nb₃Ir polycrystalline films with the A15 structure deposited on sapphire were used as substrates for the epitaxial growth of Nb₃Ge because of the favorable lattice parameter match. The experimental results clearly show that epitaxial growth indeed occurs and helps to extend the range of homogeneity of the A15 phase up to 26.3 at.% Ge as compared with the thermodynamic equilibrium boundary at 19 at.% Ge. We also used Nb₃Rh films as substrates and found them inferior to Nb₃Ir because of the multiphase nature of the films.In addition to extending the A15 phase boundary epitaxy results in a considerable rise in the superconducting transition temperature for Ge-rich samples together with a reduction in the transition width. The work suggests that polycrystalline epitaxy can be an important tool in the synthesis of thin-film intermetallic compounds.     

Extended x-ray absorption fine structure investigations of Nb3Ge0.26Al0.74

We have performed Extended X-ray Absorption Fine Structure (EXAFS) studies of the high-T_c ternary superconducting alloy Nb₃Ge_0.26Al_0.74 above the Ge K-edge. The EXAFS indicates that the local environment surrounding the Ge atoms is characterized by a high degree of structural order, similar to that found in previous investigations of high-T_c Nb₃Ge thin films. We also present direct “microscopic” structural evidence that this material is a solid solution of Nb₃Ge and Nb₃Al. No evidence of Nb₃Ge microcrystals is observed.     

The effect of thermal treatment on the magnetic properties of Ge-doped FeNbB alloys

The effects of Ge doping on the magnetic properties of nanocrystalline FeNbB ribbons are investigated. For amorphous Fe₈₀Nb₁₀Ge₃B₇ alloy, three crystallization processes are observed when heated from room temperature to 1173 K. At 973 K, a harder magnetic phase is formed, which brings about a constricted hysteresis loop. A large increase of relaxation frequency and a dramatic drop of permeability of 973 K-annealed Fe₈₀Nb₁₀Ge₃B₇ alloy are observed. The presence of Nb is essential for the nanocrystallization of α-Fe grains. If Nb is replaced by Ge completely, the thermal treatment will lead to the formation of coarse-grained Fe₃Ge phase rather than nanosized α-Fe grains. The coarse-grained Fe₃Ge results in a remarkable drop in magnetic softness. PACS 75.75.+a; 75.50.Bb     

Nb3Sn超导材料的高场钉扎行为

本文利用线性回归分析法处理扩散和气相沉积Nb₃Sn带材样品以及青铜法多芯Nb₃Sn线材样品在高场(²2T)下的临界电流测试数据,得到J_c-B曲线和钉扎力随磁场变化的经验规律。该规律与Kramer模型的钉扎力公式不一致,有待提出新的理论模型加以说明。 关键词：     

The CESR and spin wave studies of A-15 films in normal and superconducting states

The electron spin resonance studies have been reported for A-15 superconductors, namely Nb₃Ge, Nb₃Si and V₃Si possessing different T_c values and CESR, Platzmann-Wolff type spin waves, and spin waves of antiferromagnetic type are observed in all the samples. It is found that T_c of Nb₃Ge depends upon the presence and separation of spin wave absorptions from the CESR, and T_c is found to increase when the separation is reduced. It is concluded that the exchange interactions in the conduction band, as manifested by the behaviour of spin waves, are of antiferromagnetic type and they are responsible for superconductivity in A-15 materials studied.     

Ultrasonic attenuation by a thin film of high transition temperature Nb3Ge

The electron-phonon contribution to the ultrasonic attenuation coefficient of a 0.5 μm Nb₃Ge film has been measured using 1.2 GHz surface acoustic waves. Analysis of the attenuation data shows that the largest part of the film has a superconducting transition near the bulk transition temperature, 18 K, even though the total film has a high transition temperature, namely 21.5 K. The electron mean free path is calculated from the electron-phonon attenuation data and is found to be an order of magnitude higher than expected for high transition temperature Nb₃Ge films.     

Energy loss spectra,auger spectra and high energy electron diffraction of A-15 superconductors

We have measured the electron energy loss spectra of V₃Si, Nb₃Al, Nb₃Sn, Nb₃Ge (annealed) and Nb₃Ge (sputtered) from 3 to 70 eV. Numerous new structures were discovered in this study which could be related to interband transitions, plasma excitations, and core transitions. We have also measured the high energy electron diffraction patterns and Auger spectra which characterized the lattice structures and compositions of these surfaces.     

Properties of Nb3Ge tapes for high field magnets

A laboratory process for long Nb₃Ge tapes fabrication by chemical vapor deposition (CVD) has been set up. The Nb₃Ge tapes which were fabricated offer the possibility of high current and high field operation at 4.2 K since the values of critical current densities, J_c, measured in high magnetic fields at 20T and 4.2K exceed 5 × 10⁴ A cm^?2 which is the generally accepted criterion for producing a superconducting magnet.     

Nanocrystals magnetic contribution to FINEMET-type soft magnetic materials with Ge addition

Over the last years several works have been published in which magnetic and structural properties of soft magnetic nanocrystalline alloys were reported. Among these, there are a series of articles where the nanocrystals composition of FINEMET-type alloys with Ge addition was obtained by Mössbauer spectroscopy (MS) and X-ray diffraction (XRD). By considering a linear relationship between the magnetic moments of the nanocrystals and the composition of various elements in these crystallites, the magnetic moment of the nanocrystals was calculated. This paper reviews results obtained by different authors since 1980 and they are compared with ours. In turn, we revised some elements not previously considered for the calculus of the nanocrystals composition that allowed us to obtain the magnetic moment of the crystallites in the alloy. In particular, we analyzed FINEMET-type alloys with replacement of B for Ge: Fe_73.5Si_13.5Ge₂B₇Nb₃Cu₁ and Fe_73.5Si_13.5Ge₄B₅Nb₃Cu₁. The nanocrystalline structure was obtained by isothermal annealing of melt-spun ribbons at 823 K for 1 h. From MS and XRD we obtained the atomic composition of the nanocrystals in the magnetic material. The magnetic contribution of the nanocrystals to the alloy was calculated using a linear model and the results were compared with experimental measurements of the samples.     

Upper critical fields of Nb3Ge thin film superconductors

The upper critical field H_c2(T) of the highest T_c(～23K) Nb₃Ge superconducting films has been found to be ≈370kG at 4.2K. Measurements on lower T_c films show very broad transitions reflecting nonuniformity. The H_c2(T) characteristics are consistent with other Nb₃X type II superconductors.     

Effect of the addition of Ge to the FINEMET alloy

The results obtained by partially substituting Ge for B and Si in the FINEMET alloy for the purpose of improving its magnetic properties at high temperatures are presented in this work. Nanocrystalline ribbons were obtained from controlled crystallization of amorphous material made employing the melt spinning technique. The studied compositions were: Fe_73.5Si_13.5Ge₂Nb₃B₇Cu₁ and Fe_73.5Si_13.5Ge₄Nb₃B₅Cu₁. The structural evolution of these alloys was studied using X-ray diffraction (XRD) and differential scanning calorimetry (DSC) and these results were correlated with their magnetic properties at different annealing temperatures. The coercivity obtained for both alloys was below 1 A/m at anneling temperatures between 773 and 823 K. The amorphous saturation magnetization was satisfactory, almost 137 emu/g, comparable with that obtained for FINEMET alloys. The nanocrystallization and the Curie temperatures are dependent on Ge concentration.     

Effects of tin-compounds addition on Jc and microstructure for YBCO films

Tin-compounds were doped into YBa₂Cu₃O_7−δ (YBCO) films as pinning centers to enhance J_c in magnetic fields. YBCO films were grown by a metal organic deposition process using tri-fluoroacetates starting solutions. Tin-acetylacetonate salts were then dissolved into the starting solution as pinning centers. J_c of the YBCO films with tin-acetylacetonates were enhanced in all magnetic field angles. Transmission electron microscopy (TEM) and TEM-EDS (Energy Dispersive X-ray Spectroscopy) observations revealed the existence of tin-compound particles with the size of about 30 nm in the YBCO film. These nano particles were distributed randomly in the film and were considered to act as 3-dimentional pinning centers.     

Commensurability effects in magnetic properties of superconducting Nb thin films with periodic submicrometric pores

Pinning properties in 100 nm thick continuous and porous superconducting Nb films are examined by ac susceptibility and dc magnetization measurements. The Nb film was deposited on a smooth Si substrate, while the porous film, Nb_P, was deposited on an anodized Al oxide substrate. Pores or “antidots” 40 nm in diameter, 100 nm apart, form a triangular array. The porous film presents commensurate or matching field effects for applied magnetic fields where the magnetic flux threading each unit cell is an integer number of the flux quantum, where ac shielding capability and dc diamagnetic magnetization show an abrupt increase. The response to ac fields as a function of temperature and dc field provided a way to determine that Nb_P sample has higher pinning than the continuous one, and that T_C suppression due to fluxoid quantization is not relevant for the investigated temperature range.     

Elektronenmikroskopische Untersuchungen von Nb3 Sn-Bändern

An electronmicroscopic study of chemical vapour deposited Nb₃Sn is reported. A special electropolishing technique for thinning HASTELLOY strips coated with Nb₃Sn on both sides made it possible to study the defect structure of Nb₃Sn doped with Carbon at different amounts. A net work like defect structure is concluded to determine the pinning character and the ability of Nb₃Sn to carry a high transport current.     

A possible role of amorphous regions at grain-boundary vertex points as linear defects on flux pinning in MgB2 films with columnar grain structure

We measured the transport properties of MgB₂ films having columnar grain structure with their axis normal to the substrate. When an external magnetic field was applied parallel to the grain axis, an enhanced critical current density has been observed, and this result has been ascribed to flux pinning induced by grain boundaries. The shape of the angular dependence of critical current density and its magnetic field dependence showed a quite similar resemblance to those of YBa₂Cu₃O_x films containing columnar defects, implying a possible existence of linear defects in MgB₂ films of columnar structure. We propose that the amorphous regions at the vertex points of three or more grain boundaries observed in microstructural studies correspond to the linear defects and these linear defects anchor the end points of the flux line dislocations of Frank-Read sources, by which the shear in the flux line lattice is actuated. This assumed mechanism is found to reasonably explain the magnetic field dependence of the flux pinning force density of MgB₂ films with columnar grain structure.     

The sputtering of high Tc A15 Nb3Si and V3Ge

We report some initial results on the preparation of A15 Nb₃Si and V₃Ge using a getter sputtering technique. Under sufficiently clean conditions we observe an increase in the superconducting transition temperature. DC onsets in excess of 14 and 11 K have been observed for Nb₃Si and V₃Ge respectively. In each case a positive identification of the A15 phase has been made.     

Enhanced critical current density of MgB2 thin films deposited at low temperatures by ZnO seed impurity

We report a facile method to enhance the critical current density (J_c) of superconducting MgB₂ thin films. MgB₂ thin films were deposited on zinc acetate dehydrate (Zn(CH₃COO)₂2H₂O) spin-coated Al₂O₃ (000l) substrates by using a hybrid physical-chemical vapor deposition system at low temperatures. Synthesis of MgB₂ at low temperatures can reduce the substitution of Zn into the Mg site, hence avoiding the reduction of superconducting critical temperature. MgB₂ thin films grown on ZnO-buffered layers showed a significant enhancement of J_c in the magnetic field due to the creation of additional pinning sources, namely point defects and grain boundaries. Broad peaks were observed in the magnetic field dependence of the flux pinning force density, indicating competition of different pinning sources.     

Evidence for insulator–metal transition in amorphous chalcogenide Se–Ge–Te films

The temperature dependence of the dc conductivity and thermoelectric power was determined for five different amorphous chalcogenide Se–Ge–Te films, with Ge?=?3.0–22?at.%, Se?=?0–97?at.% and Te?=?0–97?at.%. The films were prepared by thermal evaporation of GeSe₄, GeTe₄ and GeSe₂Te₂ quenched bulk materials. Values of the activation energy calculated from the temperature dependence of both electrical conductivity and thermoelectric power showed a decrease with increasing Ge content in the Se–Ge films as well as with replacement of Te for Se in the Se–Ge–Te films. The results showed an Anderson transition, with the conductivity showing insulating behaviour on the Ge–Se side to metallic behaviour at the binary composition Ge–Te. The radius of localization was obtained for the different compositions investigated. The wave function associated with the charge carriers at the composition Ge_3.3Te_96.7 is non-localized. A minimum metallic conductivity of 237?±?5?(Ω?cm)^?1 was found.     

Round-robin study of Tc measurement of superconducting “Nb3Ge” thin films

To determine the reproductibility in the measurement of T_c a round-robin experiment was conducted. The samples consisted of five high T_c “Nb₃Ge” thin films. The results of this experiment show that only the midpoint of the T_c curve is reproducible to within ≈±0.2 K.     

Superconductivity with onset above 23° K in NbGe sputtered films

Sputtered films of nominal composition Nb₃Ge deposited onto hot substrates, of the type recently found by Gavaler to have superconductivity onsets at 22.3° K, have now been obtained with a maximum onset temperature of 23.2 ± 0.2° K and a transition width of ～ 1.2° K. The sputtering conditions necessary to achieve these results are discussed and suggest that the high T_c phase may be detrimentally affected by the presence of high energy particles present under normal sputtering conditions.