Ge在Si(111)7×7表面的选择性吸附

利用超高真空扫描隧道显微镜研究了室温条件下Ge在Si(111)7×7表面上初期吸附过程.在Ge所形成团簇中存在一个临界核.这些Ge团簇的吸附中心总是在三个增原子所围成的区域中.它们的电子结构具有类似半导体的性质,即其局域态密度在远离费米面的能级处很大,而在费米面附近的能级处非常小. 关键词： 扫描隧道显微镜 Si(111)7×7表面 Ge团簇     

用扫描隧道显微镜针尖操纵金岛

用扫描隧道显微镜，在小隧道阻抗的条件下（小偏压和大隧道电流），通过移动针尖，实现了在室温下对真空蒸镀在高定向石墨上的、由几万个原子组成的纳米尺度金岛的操纵．在大隧道阻抗的情形下，用同一个针尖可对操纵的结果进行观察，而不会对金岛产生扰动．这种可控的操纵是通过当钨针尖与金岛间距离很近时形成的金属间黏附力大于金岛与石墨间的摩擦力而实现的 关键词：     

电场下用扫描隧道显微镜对针尖原子扩散的观察

用扫描隧道显微镜（STM）研究了在金针尖和金样品间施加大偏压时所发生的各种不同的现象．在缓变大偏压的作用下，观察到针尖原子会发生场致扩散，导致针尖形状发生变化，并且还观察到了场发射和共振隧穿现象．提出了针尖原子的场致扩散是偏压电场使针尖表面极化引起的这一机理，并且指出了这种场致扩散在用大脉冲偏压作表面加工中起着重要的作用 关键词：     

表面偶极子对扫描电子显微镜共振电子注入的影响

用共振电子注入法和第一性原理计算研究了硒(Se)单原子在Si(111)-7×7表面的吸附. 理论结果表明由于不同的电负性,表面Si原子会向吸附的Se原子发生电子转移,从而导致一个0.61 eV的表面偶极子形成. 该表面偶极子改变了Si表面的有效隧道能垒同时导致在样品和扫描电子显微镜针尖之间真空间隙中共振态能级的移动. 并且0.61 eV的表面偶极子会引起共振电子注入偏压向高电位移动0.45 V.     

Al(111)表面单个Al原子的操纵── W针尖与Al原子的相互作用

为了较清楚地阐明扫描隧道显微镜针尖在样品表面原子操纵中的具体作用，根据第一性原理的离散变分理论计算，采用“团簇模型”研究了在无外加电场下，W针尖与样品Al(111)表面Al原子的相互作用．结果表明：随着W针尖与样品表面接近到一定程度（针尖与样品表面的距离S≤10a.u.(0.53nm))时，由于针尖原子与样品表面原子的相互作用，使位于针尖正下方的表面Al原子在脱离表面时感受到一稳定的势阱，即在无外场的情况下，当W针尖与样品Al(111)表面接近到一定程度时，由于针尖的吸引作用，将使针尖正下方的Al原子自动离开样品表面而移向W针尖，实现Al(111)表面单个Al原子的操纵． 关键词：     

局域功函数图像及其在Cu(111)-Au/Pd表面的应用

用扫描隧道显微镜（STM）对Cu(111)-Au和Cu(111)-Pd表面的局域功函数进行了研究.通过 测量隧道电流对针尖样品间距的响应，得到了与STM形貌图一一对应的表面局域功函数图像. 实验发现，Au/Pd覆盖层和Cu衬底间的功函数有明显的不同.Pd薄膜的功函数甚至超过了其体 本征值，且功函数在台阶处变小.用偶极子的形成解释了台阶处功函数的降低.这一工作表明 ，用测量局域功函数的方法容易区分表面上不同的元素，并具有纳米尺度的空间分辨率. 关键词： 扫描隧道显微镜 局域功函数 台阶     

Na原子在Si(111)-(7×7)表面的吸附:从二维原子气到纳米团簇阵列

作者利用扫描隧道显微镜 (STM)详细研究了室温下Na原子在Si(111) (7× 7)表面的吸附 .对STM图像及功函数变化的分析表明 ,当Na原子覆盖度小于临界覆盖度 (0 .0 8ML)时 ,Na原子具有类气态的性质并可以在一个吸附能阱中快速移动 .从STM图像可看出这种移动导致的对比度调制 .在临界覆盖度以上 ,Na原子自组装形成团簇阵列 .第一原理模拟计算的结果与作者的实验结论很好吻合 .     

扫描隧道显微镜针尖调制的薄膜表面的原子扩散

采用原子尺度的模拟方法,探讨了在零偏压下扫描隧道显微镜(STM)针尖调制的金属表面岛上原子运动及岛边的层间质量输运. 研究结果显示STM的移动对岛上及岛边的原子扩散有重要的影响. 针尖与吸附原子的交互作用及岛和基体中强的形状变化影响了岛上吸附原子的跳跃扩散及岛边的跳下扩散和交换扩散过程. 研究发现,通过调节针尖与基体的垂直距离及针尖与吸附原子的水平距离,可以降低岛上吸附原子的跳跃扩散能垒及岛边的跳下扩散和交换扩散能垒,从而实现薄膜由三维生长模式向二维生长模式的转变. 关键词： 扫描隧道显微镜 原子运动 质量输运     

铜箔上生长的六角氮化硼薄膜的扫描隧道显微镜研究

利用扫描隧道显微镜研究了采用化学气相沉积法在铜箔表面生长出的高质量的六角氮化硼薄膜. 大范围的扫描隧道显微镜图像显示出该薄膜具有原子级平整的表面, 而扫描隧道谱则显示, 扫描隧道显微镜图像反映出的是该薄膜样品的隧穿势垒空间分布. 极低偏压的扫描隧道显微镜图像呈现了氮化硼薄膜表面的六角蜂窝周期性原子排列, 而高偏压的扫描隧道显微镜图像则呈现出无序和有序排列区域共存的电子调制图案. 该调制图案并非源于氮化硼薄膜和铜箔衬底的面内晶格失配, 而极有可能来源于两者界面处的氢、硼和/或氮原子在铜箔表面的吸附所导致的隧穿势垒的局域空间分布.     

超高真空原子尺度Aux/Si(111)-(7×7)表面吸附的电荷分布测量

原子尺度表面吸附Au原子的物理化学性质对研究纳米器件的制备以及表面催化等起着非常重要的作用.利用调频开尔文探针力显微镜研究了室温下Au在Si(111)-(7×7)表面吸附的电荷分布的特性.首先,利用自制超高真空开尔文探针力显微镜成功得到了原子尺度Au在Si(111)-(7×7)不同吸附位的表面形貌与局域接触电势差(LCPD);其次,通过原子间力谱与电势差分析了Au/Si(111)-(7×7)特定原子位置的原子特性,实现了原子识别;并通过结合差分电荷密度计算解释了Au/Si(111)-(7×7)表面间电荷转移与Au的吸附特性.结果显示,Au原子吸附有单原子和团簇形式.其中,Au团簇以6个原子为一组呈六边形结构吸附于Si(111)-(7×7)的层错半单胞内的3个中心原子位;单个Au原子吸附于非层错半单胞的中心顶戴原子位;同时通过电势差测量得知单个Au原子和Au团簇失去电子呈正电特性.表面差分电荷密度结果显示金在吸附过程中发生电荷转移,失去部分电荷,使得吸附原子位置上的功函数局部减少.在短程力、局域接触势能差和差分电荷密度发生变化的距离范围内,获得了理论和实验之间的合理一致性.     

Stress-induced phenomena on gold surfaces in air

When gold atoms are field-evaporated onto a gold surface in an STM in an atmospheric environment, the deposited clusters can induce a large strain on the substrate around them. Cluster atoms may spread by diffusion to relieve the strain. Sometimes, additional features involving the substrate atoms are formed which can be changed by the scanning direction of the tip. For a surface which has not yet reached the thermal equilibrium state, the tip scanning can occasionally induce large-scale structural changes of the surface.     

Ge(112)-(4×1)-In表面重构的原子结构

用扫描隧道显微镜(STM)研究了亚单层In原子引起的Ge(112)-(4×1)-In表面重构.结合随偏压极性不同而显著不同的STM图象和相应的“原子图象”,为这个重构提出了一个原子结构模型,供进一步研究参考.其中,In原子的吸附位置与它在Si(112)表面的吸附位置一致,但与Al原子和Ga原子在Si(112)表面的吸附位置不同.这个吸附位置的不同主要是由In原子较长的共价键键长引起的 关键词： 表面结构 In Ge 扫描隧道显微镜(STM)     

Dopant-pair structures segregated on a hydrogen-terminated Si(100) surface

Novel atomic structures on a H-terminated Si(100)-(2x1)-H surface were found using scanning tunneling microscopy (STM). The structures are distinguishable only from Si dimers in empty-state STM images. They were observed on arsenic- and phosphorus-doped substrates, but not on boron-doped substrates. Surface density of these structures was found to be proportional to the dopant density in the substrate. First-principles calculations clarify that they are consisting of dopant pairs that are segregated from the bulk material. Hydrogen atoms attached to the dopant pair are found to flip between two positions on the surface due to a quantum effect.     

Closed form solutions for thermal stress field due to non-equilibrium heating during laser short-pulse irradiation

Non-equilibrium heating in the lattice sub-system results in high temperature gradients in the surface region. This in turn causes thermal stress waves propagating into the substrate material. In the present study, a closed form solution for thermal stress developed in the substrate material due to volumetric pulse heating is presented. The stress free and stress continuity boundary conditions at the surface are incorporated in the closed form solutions. It is found that thermal stress wave is tensile in the surface region and it becomes compressive at some depth below the surface for stress free condition at the surface; however, it remains compressive for the condition of stress continuity at the surface.     

Identification of active oxygen on Cu 110 using low temperature scanning tunneling microscopy

Using a low temperature scanning tunneling microscope (STM) we have imaged isolated oxygen-related features on the unreconstructed surface between (2 × 1)-O regions on Cu{110}. On the assumption that these are individual oxygen atoms, they appear to occupy mostly hollow sites in the troughs. We suggest that such adatoms constitute an active form of oxygen known to participate readily in deprotonation reactions on copper surfaces.     

Imaging and tunneling spectroscopy of individual iron adsorbates at room temperature

We have imaged for the first time individual atoms and small clusters of metal species on a metal substrate at room temperature by means of a scanning tunneling microscope (STM) operated under ultrahigh vacuum conditions. The system we have studied is Fe on W(110), for which a carbon-induced (15×3)-reconstruction of the W(110) substrate has been found to prevent surface diffusion of Fe atoms at 300 K. Upon positioning the STM-tip above individual Fe adsorbates, local tunneling spectra could be obtained. A pronounced empty-state peak at 0.5 eV above the Fermi level has been found, characteristic for individual Fe adsorbates. This peak can serve as a fingerprint for the identification of Fe adsorbate species.     

Imaging and tunneling spectroscopy of individual iron adsorbates at room temperature

We have imaged for the first time individual atoms and small clusters of metal species on a metal substrate at room temperature by means of a scanning tunneling microscope (STM) operated under ultrahigh vacuum conditions. The system we have studied is Fe on W(110), for which a carbon-induced (15×3)-reconstruction of the W(110) substrate has been found to prevent surface diffusion of Fe atoms at 300 K. Upon positioning the STM-tip above individual Fe adsorbates, local tunneling spectra could be obtained. A pronounced empty-state peak at 0.5 eV above the Fermi level has been found, characteristic for individual Fe adsorbates. This peak can serve as a fingerprint for the identification of Fe adsorbate species.     

Formation and stabilization of Fe-induced magic clusters on Si(1 1 1)-(7 × 7) template

We demonstrate the growth of Fe-induced magic clusters on Si(1 1 1)-(7 × 7) template by in situ scanning tunneling microscopy (STM). These clusters form near a dimer row at one side of the half-unit cell (HUC); and with three different equivalent orientations. A cluster model comprising three top layer Si atoms bonded to six Fe atoms at the next layer in the 7 × 7 faulted-half template is proposed. The optimized cluster structure determined by first-principles total-energy calculation shows an inward-shifting of the three center Fe atoms. The clusters and the nearby center-adatoms of the next HUCs appear with a significantly reduced height below bias voltages 0.4 V in high resolution empty-state STM images, suggesting an energy gap opening near the Fermi level at these localized cluster and adatom sites. We explain the stabilization of the clusters on the 7 × 7 template using the gain in electronic energy as the driving force for cluster formation.     

Fabrication of atomic wires based on self-organization

One-dimensional chain-like structures consisting of rows of single chromium adatoms have been obtained by annealing a submonolayer chromium film deposited under ultra-high vacuum (UHV) conditions onto a Cr(100) single crystal substrate. The self-organization of the Cr atoms under the influence of the substrate surface potential leads to two kinds of atomic rows orientated in orthogonal directions, thereby reflecting the symmetry of the Cr(100) surface potential. The formation of these atomic-scale wires has been monitored in-situ by means of a UHV scanning tunneling microscope (STM).     

Na adsorption on the Si111-(7 x 7) surface: from two-dimensional gas to nanocluster array

We have systematically investigated Na adsorption on the Si(111)-(7 x 7) surface at room temperature using scanning tunneling microscopy (STM). Below the critical coverage of 0.08 monolayer, we find intriguing contrast modulation instead of localized Na adsorbates, coupled with streaky noise in the STM images, which is accompanied by monotonic work function drop. Above the critical coverage, Na clusters emerge and form a self-assembled array. Combined with first-principles theoretical simulations, we conclude that the Na atoms on the (7 x 7) surface are, while strongly bound ( approximately 2.2 eV) to the surface, highly mobile in "basins" around the Si rest atoms, forming a two-dimensional gas phase at the initial coverage, and that the cluster at the higher coverage consists of six Na atoms together with three Si adatoms.