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1.
We have investigated the controversy surrounding the (sqrt[3] x sqrt[3]) R30 degrees structure of self-assembled monolayers of methylthiolate on Au(111) by first principles molecular dynamics simulations, energy and angle resolved photoelectron diffraction, and grazing incidence x-ray diffraction. Our simulations find a dynamic equilibrium between bridge site adsorption and a novel structure where 2 CH3S radicals are bound to an Au adatom that has been lifted from the gold substrate. As a result, the interface is characterized by a large atomic roughness with both adatoms and vacancies. This result is confirmed by extensive photoelectron and grazing incidence x-ray diffraction measurements.  相似文献   

2.
Atomic depth distribution and growth modes of Ga on an Si(111)-alpha-(sqrt[3]xsqrt[3])-Au surface at room temperature were studied after each monolayer deposition of Ga via reflection high-energy electron diffraction and characteristic x-ray spectroscopy measurements as functions of glancing angle theta(g) of the incident electron beam. One monolayer of Ga grew on the Au layer, and the sqrt[3]xsqrt[3] periodicity was conserved below the Ga overlayer. Above a critical Ga coverage of about one monolayer, this growth mode drastically changed; i.e., Au atoms dissociated from the sqrt[3]xsqrt[3] structure and Ga grew into islands of Ga-Au alloy.  相似文献   

3.
Density functional theory calculations show that the reversible Sn/Ge(111) sqrt[3]xsqrt[3]<-->3x3 phase transition can be described in terms of a surface soft phonon. The isovalent Sn/Si(111) case does not display this transition since the sqrt[3]xsqrt[3] phase is the stable structure at low temperature, although it presents a partial softening of the 3x3 surface phonon. The rather flat energy surfaces for the atomic motion associated with this phonon mode in both cases explain the experimental similarities found at room temperature between these systems. The driving force underlying the sqrt[3]xsqrt[3]<-->3x3 phase transition is shown to be associated with the electronic energy gain due to the Sn dangling bond rehybridization.  相似文献   

4.
Distortions of the sqrt[3]x sqrt[3] Sn/Ge(111) and Sn/Si(111) surfaces are shown to reflect a disproportionation of an integer pseudocharge, Q, related to the surface band occupancy. A novel understanding of the (3 x 3)-1U ("1 up, 2 down") and 2U ("2 up, 1 down") distortions of Sn/Ge(111) is obtained by a theoretical study of the phase diagram under strain. Positive strain keeps the unstrained value Q=3 but removes distortions. Negative strain attracts pseudocharge from the valence band causing first a (3 x 3)-2U distortion (Q=4) on both Sn/Ge and Sn/Si, and eventually a (sqrt[3] x sqrt[3])-3U ("all up") state with Q=6. The possibility of a fluctuating phase in unstrained Sn/Si(111) is discussed.  相似文献   

5.
A plane-wave density functional theory (DFT) study on surface interactions of a cyclo-[Au(μ-Pz)]3 monolayer (denoted as T), Pz = pyrazolate, with Au(111) and Al(111) surfaces (denoted as M′) has been performed. Structural and electronic properties at the M′–T interfaces are determined from individually optimized structures of M′, T and M′–T. Results show that the gold pyrazolate trimer (T) binds more strongly on the Au(111) surface than on Al(111). Charge redistribution has been observed at both M′–T interfaces, where charge is “pushed” back towards the Au(111) surface from the trimer monolayer in Au(111)–T system, while the opposite happens in the Al(111)–T system where the charge is being pushed toward the trimer monolayer from the Al(111) surface. Considerable changes to the work function of Au(111) and Al(111) surfaces upon the trimer adsorption which arise from monolayer vacuum level shifts and dipole formation at the interfaces are calculated. The interaction between cyclo-[Au(μ-Pz)]3 with metal surfaces causes band broadening of the gold pyrazolate trimer in M′–T systems. The present study aids better understanding of the role of intermolecular interactions, bond dipoles, energy-level alignment and electronic coupling at the interface of metal electrodes and organometallic semiconductor to help design metal–organic field effect transistors (MOFETs) and other organometallic electronic devices.  相似文献   

6.
We propose that the indirect adatom-adatom interaction mediated by the conduction electrons of a metallic surface is responsible for the sqrt[3]xsqrt[3]<==>3x3 structural phase transitions observed in Sn/Ge (111) and Pb/Ge (111). When the indirect interaction overwhelms the local stress field imposed by the substrate registry, the system suffers a phonon instability, resulting in a structural phase transition in the adlayer. Our theory is capable of explaining all the salient features of the sqrt[3]xsqrt[3]<==>3x3 transitions observed in Sn/Ge (111) and Pb/Ge (111), and is in principle applicable to a wide class of systems whose surfaces are metallic before the transition.  相似文献   

7.
Structure of epitaxially grown gold films of varying thickness (10–1000Å) has been investigated using LEED, AES, resistivity measurements and X-ray diffraction analysis. Silicon 111-oriented crystals, which are prehandled to exhibit \(\sqrt 3 \times \sqrt 3 R 30^\circ \) -supersctructure in the LEED pattern, serve as substrates. The gold films show a homogeneous structure with smooth surfaces and a marked (111)-orientation. The use of silicon substrates, however, is complicated by the fact, that silicon diffuses through the gold films to a small extent even at room temperature.  相似文献   

8.
The adsorption of lead on gold at room temperature in UHV conditions has been studied by LEED and AES. We review some of the data obtained on the Au(100), (111), and (110) faces, published elsewhere, and we give some new experimental results on the stepped Au(S) [n(100) × (111)] (with n = 3, 4, 5, and 6) faces. On all these faces, as lead is deposited on the gold substrate it first forms a monolayer of lead, then a compound AuPb2. Using the LEED and Auger data we give a model of the epitaxy with a layer-by-layer growth mechanism. We propose a model which involves a transition alloy wich forms at the interface Au/AuPb2. This model is in agreement with the LEED diagrams observed before the one corresponding to bulk AuPb2. In the case of the epitaxy of lead on gold (100), we calculate the Auger peak-to-peak ] heights of the gold (72 eV) and lead (93 eV) transitions versus coverage. We obtain good agreement with the experimental data, assuming that the first and last layers of the alloy are lead monolayers and diffusion of lead in gold as well as gold in lead.  相似文献   

9.
Observations of clean Si(111) and gold-deposited Si(111) surfaces have been performed using micro-probe reflection high-energy electron diffraction. It was found that many atomic steps on a Si(111) surface run in nearly the same direction, about 9° off the [1&#x0304;1&#x0304;2] direction. When gold was deposited on this surface at a substrate temperature of about 800°C, 5 × 1, diffuse √3 × √3R30°, sharp √3 × √3 R30° structures and Au clusters appeared on the surface with continuation of the deposition. During the deposition process, it was found that one kind of Si(111) 5 × 1 Au domain grew selectively along these atomic steps and nearly covered the entire surface. A phenomenon of gold clusters moving during the deposition was also observed. These clusters all moved in nearly the same direction so as to climb the atomic steps.  相似文献   

10.
Growth of gold condensed on the (110) plane of tungsten has been studied using LEED and AES. Three ordered surface structures were observed when condensation takes place at or above 700 K, and no detectable order is seen below this temperature. Structure 1 is developed as the coverage approaches one monolayer and has gold atoms held in the W(110) array with a resultant 2% reduction in gold atom diameter. The second gold layer adopts the Au(111) structure with Au[121] rotated by 2.5° from W[110] and the first gold layer may also be constrained to adopt this structure. Deposition of more gold produces three dimensional crystallites with Au(111)∥W(110) which are double-positioned with their 121 directions parallel to the 121 directions of tungsten. Addition of half a monolayer of oxygen before condensation, completely prevents formation of structures 1 and 2. Instead, at coverages of 3 or more monolayers, three dimensional crystallites develop with Au(111) ∥ W(110) and Au[121] ∥ W[110]. This behaviour is compared with the reported behaviour of copper and silver on W(110).  相似文献   

11.
Four families of conjugated molecules, containing between one and three phenyl rings and having both thiol (–SH) and isocyanide (–NC) end groups, have been synthesized and assembled as monolayers on flat Au(111) substrates. The conductance spectra G(V) for these molecular wires were systematically measured in UHV conditions using scanning tunneling microscope techniques. The measured conductance spectra for the molecules having thiol end groups are compared to a recent theory for molecular conduction. The favorable comparison indicates that the important properties influencing the conductance of short, conjugated molecular wires having thiol end groups and forming self-assembled monolayers on a Au(111) surface have been successfully identified. The isocyanide molecules reveal a shift in Fermi level of the molecule as a function of phenyl ring number that is opposite to that observed for the thiol-terminated molecules. The trends in molecular conductance determined from this systematic study are summarized and discussed and provide insight into the role played by bonding end groups in electronic conduction.  相似文献   

12.
We measured the barrier height (BH) a UHV scanning tunneling microscope on Au(111) surfaces with Au, Pt, and carbon nanotube tips. The 222?{[¯] }3[¯]\sqrt\Box3\Box]] reconstruction was observed with all the tips, and the current-voltage relation reflected the density of states of the tips. The BH measured on the reconstructed Au(111) surface using a modulation method showed a bias-polarity dependence as 30%, at low currents (<100 pA) irrespective of the tip material, while on unreconstructed Au surfaces, BH values were independent of the bias polarity, suggesting a dipole layer originating from the reconstructed Au(111) surface.  相似文献   

13.
李白  吴太权  汪辰超  江影 《物理学报》2016,65(21):216301-216301
利用第一性原理研究了甲基联二苯丙硫醇盐(BP3S)单体、虚拟Au表面BP3S的分子链和单层膜及BP3S/Au(111)吸附系统的原子结构.计算表明BP3S单体呈对称结构,两苯环夹角为35°±10°.首先BP3S单体在虚拟Au(111)表面自组装成稳定的单一分子链.然后在虚拟Au(111)表面,分子链错位排列自组装成两种稳定的单层膜.在虚拟Au(111)-(3~(1/2)×7~(1/2))和Au(111)-(3~(1/2)×13~(1/2))表面,分子链与虚拟表面夹角分别为60°和30°.最后把两种稳定的单层膜吸附在Au(111)表面的四个吸附位,计算表明只有桥位和顶位稳定,且桥位的吸附能比顶位的吸附能低.比较吸附前后BP3S单层膜的结构变化,可知其变化不大,这说明吸附系统的结构参数主要取决于单层膜内的相互作用,衬底对其的影响不大.  相似文献   

14.
We present first-principle calculations on the initial stages of SiC homoepitaxial growth on the beta-SiC(111)-(sqrt[3]xsqrt[3]) surface. We show that the nonstoichiometric reconstruction plays a relevant role in favoring the attainment of high-quality films. The motivation is twofold: On one hand, we find that the reconstruction controls the kinetics of adatom incorporation; on the other hand, we observe that the energy gain upon surface stability can induce the reorganization of the deposited material into a crystalline structure, thus revealing that a surface-driven mechanism is able to stabilize defect-free layer deposition on Si-rich surfaces.  相似文献   

15.
We have determined the structure of the ultrathin (sqrt[67] x sqrt[67])R12.2 degrees aluminum oxide on Ni3Al(111) by a combination of scanning tunneling microscopy and density functional theory. In addition to other local defects, the main structural feature of the unit cell is a 0.4-nm-diameter hole reaching down to the metal substrate. Understanding the structure and metal growth on this oxide allows us to use it as a template for growing highly regular arrays of nanoparticles.  相似文献   

16.
The growth kinetics of self-assembled monolayers (SAMs) of thiophene compounds on Au(111) surfaces was revealed by Fourier-transform infrared reflection absorption spectroscopy (FT-IR-RAS). Thiophene and terthiophene form well-ordered SAMs on Au(111) surfaces by immersing gold substrates into their ethanol solutions for ca. 15 h. Gibbs free energies for the adsorption processes of thiophene and terthiophene were found to be identical. However, the growth and molecular orientation of SAMs are different between two thiophene compounds. Terthiophene in SAMs orients parallel to the surface. The SAM growth of terthiophene obeys a time-dependent Langmuir scheme. On the other hand, the thiophene SAM undergoes a two-step growth process with unique molecular orientations. In the primary phase, thiophene assumes a parallel orientation on the Au(111) surface. In the second phase, thiophene is oriented close to the normal of the surface. The different growth process between thiophene and terthiophene is attributable to the topology of sulfur positions in the molecules. Received 23 May 2001 and Received in final form 11 February 2002  相似文献   

17.
The spin texture of the metallic two-dimensional electron system (sqrt[3]×sqrt[3])-Au/Ge(111) is revealed by fully three-dimensional spin-resolved photoemission, as well as by density functional calculations. The large hexagonal Fermi surface, generated by the Au atoms, shows a significant splitting due to spin-orbit interactions. The planar components of the spin exhibit a helical character, accompanied by a strong out-of-plane spin component with alternating signs along the six Fermi surface sections. Moreover, in-plane spin rotations toward a radial direction are observed close to the hexagon corners. Such a threefold-symmetric spin pattern is not described by the conventional Rashba model. Instead, it reveals an interplay with Dresselhaus-like spin-orbit effects as a result of the crystalline anisotropies.  相似文献   

18.
Self-organized islands of uniform heights can form at low temperatures on metal/semiconductor systems as a result of quantum size effects, i.e., the occupation of discrete electron energy levels in the film. We compare the growth mode on two different substrates [Si(111)- (7x7) vs Si(111)- Pb(sqrt[3]xsqrt[3] )] with spot profile analysis low-energy electron diffraction. For the same growth conditions (of coverage and temperature) 7-step islands are the most stable islands on the (7x7) phase, while 5-step (but larger islands) are the most stable islands on the (sqrt[3]xsqrt[3] ). A theoretical calculation suggests that the height selection on the two interfaces can be attributed to the amount of charge transfer at the interface.  相似文献   

19.
We have characterized the structural behaviour of ethanethiol self-assembled monolayers (SAMs) on Au(1 0 0) in 0.1 M H2SO4 as a function of electrode potential, using in-situ scanning tunneling microscopy (STM). After modification of the Au(1 0 0) electrode in an ethanolic solution of ethanethiol, STM images in air reveal a disordered thiol adlayer and a surface that is covered by 25% of monoatomic high gold islands, which originate from lifting of the (hex) reconstruction during thiol adsorption. In contrast to alkanethiol SAMs on Au(1 1 1), no vacancy islands are seen on the Au(1 0 0) surface. After contact of the SAM-covered Au(1 0 0) electrode with 0.1 M H2SO4 under potential control, two different structures are observed, depending on the potential range positive or negative of +0.3 V vs. SCE. In both cases the emerging ordered structures are quadratic, their unit cells being rotated by 45° with respect to the main crystallographic axes of the substrate. However, the ordered structure at negative potentials is more densely packed than the one at positive potentials, and in addition the surface reveals an almost 50% coverage of monoatomic high gold islands. The structure of the SAM changes reversibly with the electrode potential, the long range order gradually decreasing with each transition. Concomittant with this structure transition monoatomic deep holes are created when the potential is stepped from the cathodic to the anodic region. The experimental observations are rationalized by a high mobility of the gold thiolate moiety, causing the surface density of the SAM-covered gold to change drastically with potential.  相似文献   

20.
Scanning tunneling microscopy is used to investigate the structure of sequentially adsorbed coronene/octanethiol monolayers on Au(111). In these experiments, coronene-covered gold surfaces are exposed to octanethiol vapor. The resulting mixed monolayers are covered by close-packed octanethiol domains with clusters of coronene located within octanethiol domain boundaries. For these systems, the positions of coronene on the surface are determined by the kinetics of octanethiol monolayer formation and the local structure of the gold. The initial coverage and order of the coronene-covered surface influence the final structure of the mixed coronene/alkanethiol monolayer: deposition of coronene from the vapor phase, which creates a relatively lower coverage and higher degree of order than solution-based deposition, results in smaller coronene clusters. Statistical analysis of the locations of clusters of coronene shows that depending on the deposition parameters, coronene clusters are repelled in varying degree by upward-going and downward-going steps or are attracted to the top edges of surface step defects. In contrast to clusters, isolated coronene molecules are observed in the middle of close-packed octanethiol domains, but also appear to have an affinity for the edge of downward-going steps. We compare these results to mixed monolayers composed of C70 and octanethiol.  相似文献   

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