Enhancement of charge and spin Seebeck effect in triple quantum dots coupling to ferromagnetic and superconducting electrodes

We theoretically study the thermoelectric transport properties through a triple quantum dots (QDs) device with the central QD coupled to a ferromagnetic lead, a superconducting one, and two side QDs with spin-dependent interdot tunneling coupling. The thermoelectric coefficients are calculated in the linear response regime by means of nonequilibrium Green's function method. The thermopower is determined by the single-electron tunneling processes at the edge of superconducting gap. Near the outside of the gap edge the thermopower is enhanced while thermal conductance is suppressed, as a result, the charge figure of merit can be greatly improved as the gap appropriately increases. In the same way, charge figure of merit also can be greatly improved near the outside of the gap edge by adjusting interdot tunneling coupling and asymmetry coupling of the side QDs to central QD. Moreover, the appropriate increase of the interdot tunneling splitting and spin polarization of ferromagnetic lead not only can improve charge thermopower and charge figure of merit, but also can enhance spin thermopower and spin figure of merit. Especially, the interdot tunneling splitting scheme provides a method of controlling charge (spin) figure merit by external magnetic field.     

Crossed Andreev reflection in a quantum dot coupled to a topological superconducting single-stranded DNA

We investigate the crossed Andreev reflection (CAR) through a quantum dot (QD) coupled to topological superconducting single-stranded DNA (ssDNA). It is found that the topological nontrivial states appear in the QD due to leakage of the Majorana zero mode. Majorana zero mode can be identified by measuring the CAR. This device can be used as a Majorana zero mode detector that relies on the system parameters, such as the spin orbit coupling, the twist angle, molecular length. A high efficiency Cooper pair splitter can be realized by regulating the magnitude and direction of the gate voltage. In additions, the signature of CAR is robust against the Coulomb blockade and the disorder induced by distinct amino acids. This work provides an alternative method for detection of Majorana zero mode in ssDNA.     

Flying qubits and entangled photons

Efficient generation of polarized single photons or entangled photon pairs is crucial for the implementation of quantum key distribution (QKD) systems. Self organized semiconductor quantum dots (QDs) are capable of emitting on demand one polarized photon or an entangled photon pair upon current injection. Highly efficient single‐photon sources consist of a pin structure inserted into a microcavity where single electrons and holes are funneled into an InAs QD via a submicron AlOx aperture, leading to emission of single polarized photons with record purity of the spectrum and non‐classicality of the photons. A new QD site‐control technique is based on using the surface strain field of an AlO_x current aperture below the QD. GaN/AlN QD based devices are promising to operate at room temperature and reveal a fine‐structure splitting (FSS) depending inversely on the QD size. Large GaN/AlN QDs show disappearance of the FSS. Theory also suggests QDs grown on (111)‐oriented GaAs substrates as source of entangled photon pairs.     

Majorana fermions induced fast- and slow-light in a hybrid semiconducting nanowire/superconductor device

We investigate theoretically Rabi-like splitting and Fano resonance in absorption spectra of quantum dots(QDs)based on a hybrid QD-semiconducting nanowire/superconductor(SNW/SC)device mediated by Majorana fermions(MFs).Under the condition of pump on-resonance and off-resonance,the absorption spectrum experiences the conversion from Fano resonance to Rabi-like splitting in different parametric regimes.In addition,the Fano resonances are accompanied by the rapid normal phase dispersion,which will indicate the coherent optical propagation.The results indicate that the group velocity index is tunable with controlling the interaction between the QD and MFs,which can reach the conversion between the fast-and slow-light.Fano resonance will be another method to detect MFs and our research may indicate prospective applications in quantum information processing based on the hybrid QD-SNW/SC devices.     

Quantum Dots Microstructural Metrology: From Time-Resolved Spectroscopy to Spatially Resolved Electron Microscopy

Colloidal quantum dots (QDs) have unique optical and electrical properties with promising applications in next-generation semiconductor technologies, including displays, lighting, solar cells, photodetectors, and image sensors. Advanced analytical tools to probe the optical, morphological, structural, compositional, and electrical properties of QDs and their ensemble solid films are of paramount importance for the understanding of their device performance. In this review, comprehensive studies on the state-of-the-art metrology approaches used in QD research are introduced, with particular focus on time-resolved (TR) and spatially resolved (SR) spectroscopy and microscopy. Through discussing these analysis techniques in different QD system, such as various compositions, sizes, and shell structures, the critical roles of these TR-spectroscopic and SR-microscopic techniques are highlighted, which provide the structural, morphological, compositional, optical, and electrical information to precisely design QDs and QD solid films. The employment of TR and SR analysis in integrated QD device systems is also discussed, which can offer detailed microstructural information for achieving high performance in specific applications. In the end, the current limitations of these analytical tools are discussed, and the future development of the possibility of interdisciplinary research in both QD fundamental and applied fields is prospected.     

Effect of diamine treatment on the conversion efficiency of PbSe colloidal quantum dot solar cells

Polymer-free photovoltaic devices were fabricated via a solution process using PbSe colloidal quantum dots (QDs) and an organic semiconductor (tetrabenzoporphyrin, BP) that can be prepared in situ from a soluble precursor. The device structure was ITO/PEDOT/BP:QD/QD/Al, where the BP:QD and QD layers correspond to a bulk heterojunction and a buffer layer, respectively. The buffer layer was treated with ethylenediamine (EDA) to crosslink the QDs. As a result, the energy conversion efficiency of the EDA-treated device was superior to that of an untreated device, mainly due to an increase in the short-circuit current density.     

半导体自组织量子点量子发光机理与器件

介绍了自组织量子点单光子发光机理及器件研究进展.主要内容包括：半导体液滴自催化外延GaAs纳米线中InAs量子点和GaAs量子点的单光子发光效应、自组织InAs/GaAs量子点与分布布拉格平面微腔耦合结构的单光子发光效应和器件制备,单量子点发光的共振荧光测量方法、量子点单光子参量下转换实现的纠缠光子发射、单光子的量子存储效应以及量子点单光子发光的光纤耦合输出芯片制备等.     

Modeling and numerical simulation of electrical and optical characteristics of a quantum dot light-emitting diode based on the hopping mobility model: Influence of quantum dot concentration

We present a comprehensive numerical framework for the electrical and optical modeling and simulation of hybrid quantum dot light-emitting diodes (QD-LEDs). We propose a model known as hopping mobility to calculate the carrier mobility in the emissive organic layer doped with quantum dots (QDs). To evaluate the ability of this model to describe the electrical characteristics of QD-LEDs, the measured data of a fabricated QD-LED with different concentrations of QDs in the emissive layer were taken, and the corresponding calculations were performed based on the proposed model. The simulation results indicate that the hopping mobility model can describe the concentration dependence of the electrical behavior of the device. Then, based on the continuity equation for singlet and triplet excitons, the exciton density profiles of the devices with different QD concentrations were extracted. Subsequently, the corresponding luminance characteristics of the devices were calculated, where the results are in good agreement with the experimental data.     

Exciton states in strongly coupled asymmetric semimagnetic double quantum dots

Exciton states in a pair of strongly coupled artificial asymmetric quantum dots (QDs) have been studied in magnetic fields up to B = 8T by means of photoluminescence spectroscopy. The QD molecules have been fabricated using a selective interdiffusion technique applied to asymmetric CdTe/(Cd,Mg,Mn)Te double quantum wells. The lateral confinement potential within the plane induced by the diffusion gives rise to effective zero-dimensional exciton localization. Incorporation of the Mn ions in only one dot results in a pair of QDs with a markedly different spin splitting. In contrast to a positive value of the exciton Lande g factor in nonmagnetic (Cd,Mg)Te-based single QDs, the ground exciton transition in the nonmagnetic QD demonstrates nearly zero g factor, thus, indicating a strong electron coupling between the dots. A new low-energy band with a strong red shift appears at high B signifying formation of the indirect exciton in accordance with our calculations. The text was submitted by the authors in English.     

Fabrication and characterization of a vertical pillar structure including a self-assembled quantum dot and a quantum well

We fabricate and characterize a novel vertical pillar structure including a self-assembled InAs quantum dot (QD) and an InGaAs quantum well (QW). The vertical current through both the InAs QD and an electrostatically defined QD made in the InGaAs QW can be measured by adjusting the position of the InGaAs QD in the QW plane relative to the InAs QD with two side-gate voltages applied independently. We study optical response of the current through the vertical double QD by irradiating light, which is assumed to be mainly absorbed in the InAs QDs. We successfully probe a time-dependent energy level shift due to the Coulomb interaction from holes trapped in the vicinity of the pillar.     

Demonstration of a nanoparticle-based optical diode

We present the operation of an optical device that exhibits diodelike properties based on two adjacent layers of quantum dots (QDs) encased in a fiber-optic jacket. The possibility of a multilayered device is also discussed. A significant change in the emission spectrum of CdSe/ZnS core-shell QDs was observed when excited by the input laser and the fluorescence of other CdSe/ZnS core-shell QDs. The output of the diode can be taken to be either the incoming laser wavelength of light similar to a conventional diode, or the output may be considered to be one of the QD fluorescence wavelengths. Current work has applications in biological fluorescence monitors and sensors as well as in telecommunications applications.     

Quantum Transport through a Rigidly Connected Double Quantum-Dot Shuttle

We design a double quantum-dot （QD） shuttle （DQDS） model including two rigidly connected QDs that are softly linked to two leads via deformable organic materiaJs. Based on the full quantum mechanical approaches we explore the influences on the electron transport induced by the electrical and mechanical degrees of freedom. First of a/l the modified rate equations of the DQDS are derived theoretically and then a numerical investigation on the quantum transport through the DQDS is performed. For the classical DQDS, the time-dependent evolutions of the electron- occupation probabilities and the currents flowing through the DQDS show the periodic oscillations with their periods determined by the oscillation period of the DQDS. Both the mechanical oscillation amplitude and the interdot coupling can play crucial roles in adjusting the peak shapes of the currents and the probabilities. For the quantum DQDS, the current and electron-occupation probabilities of the DQDS evolve into a stationary state as time goes on, with no periodical oscillations observed. As a consequence, the sharp differences of the time-dependent properties between the c/assica/ and quantum DQDS systems are clearly demonstrated, which should be greatly helpful in designing new nanoelectromechanical devices. Also, this work is of great significance to understanding the kind of rigidly connected QD shuttle systems that have more than two QDs.     

A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm2 only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.     

Quantum information transfer between topological and conventional charge qubits

We propose a scheme to realize coherent quantum information transfer between topological and conventional charge qubits. We first consider a hybrid system where a quantum dot(QD) is tunnel-coupled to a semiconductor Majorana-hosted nanowire(MNW) via using gated control as a switch, the information encoded in the superposition state of electron empty and occupied state can be transferred to each other through choosing the proper interaction time to make measurements.Then we consider another system including a double QDs and a pair of parallel MNWs, it is shown that the entanglement information transfer can be realized between the two kinds of systems. We also realize long distance quantum information transfer between two quantum dots separated by an MNW, by making use of the nonlocal fermionic level formed with the pared Majorana feimions(MFs) emerging at the two ends of the MNW. Furthermore, we analyze the teleportationlike electron transfer phenomenon predicted by Tewari et al. [Phys. Rev. Lett. 100, 027001(2008)] in our considered system.Interestingly, we find that this phenomenon exactly corresponds to the case that the information encoded in one QD just returns back to its original place during the dynamical evolution of the combined system from the perspective of quantum state transfer.     

Resonant tunneling of electrons through single self-assembled InAs quantum dot studied by conductive atomic force microscopy

Resonant tunneling of electrons through a quantum level in single self-assembled InAs quantum dot (QD) embedded in thin AlAs barriers has been studied. The embedded InAs QDs are sandwiched by 1.7-nm-thick AlAs barriers, and surface InAs QDs, which are deposited on 8.3 nm-thick GaAs cap layer, are used as nano-scale electrodes. Since the surface InAs QD should be vertically aligned with a buried one, a current flowing via the buried QD can be measured with a conductive tip of an atomic force microscope (AFM) brought in contact with the surface QD-electrode. Negative differential resistance attributed to electron resonant tunneling through a quantized energy level in the buried QD is observed in the current–voltage characteristics at room temperature. The effect of Fermi level pinning around nano-scale QD-electrode on resonance voltage and the dependence of resonance voltage on the size of QD-electrodes are investigated, and it has been demonstrated that the distribution of the resonance voltages reflects the size variation of the embedded QDs.     

Controllable Spin-Polarized Transport in a Three-Terminal Model

By means of the Keldysh Green's function method, we investigate the spin-polarized electron transport in a three-terminal device, which is composed of three normal metal leads and two serially-coupled quantum dots (QDs). The Rashba spin-orbit interaction (RSOI) is also considered in one of the QDs. We show that the spin-polarized charge current with arbitrary spin polarization can be obtained because of the quantum spin interference effect arising from the Rashba spin precession phase, and it can be modulated by the system parameters such as the applied external voltages, the RSOI strength, the QD levels, as well as the dot-lead coupling strengths. Moreover, a fully spin-polarized current or a pure spin current without any accompanying charge current can also be controlled to flow in the system. Our findings indicate that the proposed model can serve as an all-electrical spin device in spintronics field.     

Optimum Quantum Yield of the Light Emission from 2 to 10 nm Hydrosilylated Silicon Quantum Dots

Optimizing the light‐emitting efficiency of silicon quantum dots (Si QDs) has been recently intensified by the demand of the practical use of Si QDs in a variety of fields such as optoelectronics, photovoltaics, and bioimaging. It is imperative that an understanding of the optimum light‐emitting efficiency of Si QDs should be obtained to guide the design of the synthesis and processing of Si QDs. Here an investigation is presented on the characteristics of the photoluminescence (PL) from hydrosilylated Si QDs in a rather broad size region (≈2–10 nm), which enables an effective mass approximation model to be developed, which can very well describe the dependence of the PL energy on the QD size for Si QDs in the whole quantum‐confinement regime, and demonstrates that an optimum PL quantum yield (QY) appears at a specific QD size for Si QDs. The optimum PL QY results from the interplay between quantum‐confinement effect and surface effect. The current work has important implications for the surface engineering of Si QDs. To optimize the light‐emission efficiency of Si QDs, the surface of Si QDs must be engineered to minimize the formation of defects such as dangling bonds at the QD surface and build an energy barrier that can effectively prevent carriers in Si QDs from tunneling out.     

Optical control of excitons in a pair of quantum dots coupled by the dipole-dipole interaction

We demonstrate coherent nonlinear-optical control of excitons in a pair of quantum dots (QDs) coupled via dipolar interaction. The single-exciton population in the first QD is controlled by resonant picosecond excitation, giving rise to Rabi oscillations. As a result, the exciton transition in the second QD is spectrally shifted and concomitant Rabi oscillations are observed. We identify coupling between permanent excitonic dipole moments as the dominant interaction mechanism, whereas quasiresonant (F?rster) energy transfer is weak. Such control schemes based on dipolar interaction are a prerequisite for realizing scalable quantum logic gates.     

Exploring spatial resolution in high-sensitivity nanogap quantum dot photodetectors

We propose a new approach to experimentally determine the spatial resolution of nanogap quantum dot (QD) photodetectors consist of solution-processed QDs. Cross talk between a pair of closely positioned QD photodetectors was measured. Devices with 200?nm spacing exhibit low crosstalk of 8.4%. A single QD photodetector also shows high sensitivity, with a lowest detectable optical intensity of 95.3 fW/μm² achieved. The results show the potential of nanogap QD photodetectors for applications in high-density imaging/sensing arrays.     

White light-emitting quantum dot diodes and tuning of luminescence processes

A novel white light-emitting diode based on a large Stokes shift (~200 nm) and using pure green light-emitting CdSeS quantum dots (QDs) with an Ag/ZnSnO/QDs/spiro-TPD/ITO structure has been fabricated in which ZnSnO and spiro-TPD are served as the electron and hole transport layer, respectively. The large Stokes shift of the CdSeS QDs excludes potentially Förster resonance energy transfer process, which allows spiro-TPD to act as both an emitter and hole transport layer. The devices exhibit a wide EL spectrum consisting of three components: blue emission from spiro-TPD, green emission from QD band–band recombination, and red emission from QD surface-state recombination. We further found that as the intensity ratios among these three components vary with bias the color of the QD light-emitting diodes is tunable. The device displays a good white light-emitting characteristic with CIE coordinates of (0.281, 0.384) at an appropriate bias.