Cubic aluminum silicides RE8Ru12Al49Si9(Al(x)Si12-x) (RE = Pr, Sm) from liquid aluminum. Empty (Si,Al)12 cuboctahedral clusters and assignment of the Al/Si distribution with neutron diffraction.

Two new quaternary aluminum silicides, RE8Ru12Al49Si9(Al(x)Si12-x) (x approximately 4; RE = Pr, Sm), have been synthesized from Sm (or Sm2O3), Pr, Ru, and Si in molten aluminum between 800 and 1000 degrees C in sealed fused silica tubes. Both compounds form black shiny crystals that are stable in air and NaOH. The Nd analog is also stable. The compounds crystallize in a new structural type. The structure, determined by single-crystal X-ray diffraction, is cubic, space group Pm3m with Z = 1, and has lattice parameters of a = 11.510(1) A for Sm8Ru12Al49Si9(Al(x)Si12-x) and a = 11.553(2) A for Pr8Ru12Al49Si9(Al(x)Si12-x) (x approximately 4). The structure consists of octahedral units of AlSi6, at the cell center, Si2Ru4Al8 clusters, at each face center, SiAl8 cubes, at the middle of the cell edges, and unique (Al,Si)12 cuboctohedral clusters, at the cell corners. These different structural units are connected to each other either by shared atoms, Al-Al bonds, or Al-Ru bonds. The rare earth metal atoms fill the space between various structural units. The Al/Si distribution was verified by single-crystal neutron diffraction studies conducted on Pr8Ru12Al49Si9(Al(x)Si12-x). Sm8Ru12Al49Si9(Al(x)Si12-x) and Pr8Ru12Al49Si9(Al(x)Si12-x) show ferromagnetic ordering at Tc approximately 10 and approximately 20 K, respectively. A charge of 3+ can be assigned to the rare earth atoms while the Ru atoms are diamagnetic.     

RE(AuAl2)nAl2(AuxSi1-x)2: a new homologous series of quaternary intermetallics grown from aluminum flux

The combination of early rare earth metals (La- to Gd and Yb), gold, and silicon in molten aluminum results in the formation of intermetallic compounds with four related structures, forming a new homologous series: RE[AuAl2]nAl2(AuxSi(1-x))2, with x approximately 0.5 for most of the compound and n = 0, 1, 2, and 3. Because of the highly reducing nature of the Al flux, rare earth oxides instead of metals can also be used in these reactions. These compounds grow as large plate-like crystals and have tetragonal structure types that can be viewed as intergrowths of the BaAl4 structure and antifluorite-type AuAl2 layers. REAuAl2Si materials form with the BaAl4 structure type in space group I4/mmm (cell parameters for the La analogue are a = 4.322(2) A, c = 10.750(4) A, and Z = 2). REAu2Al4Si forms in a new ordered superstructure of the KCu4S3 structure type, with space group P4/nmm and cell parameters of the La analogue of a = 6.0973(6) A, c = 8.206(1) A, and Z = 2. REAu3Al6Si forms in a new I4/mmm symmetry structure type with cell parameters of a = 4.2733(7) A, c = 22.582(5) A, and Z = 2 for RE = Eu. The end member of the series, REAu4Al8Si, forms in space group P4/mmm with cell parameters for the Yb analogue of a = 4.2294(4) A, c = 14.422(2) A, and Z = 1. New intergrowth structures containing two different kinds of AuAl2 layers were also observed. The magnetic behavior of all these compounds is derived from the RE ions. Comparison of the susceptibility data for the europium compounds indicates a switch from 3-D magnetic interactions to 2-D interactions as the size of the AuAl2 layer increases. The Yb ions in YbAu(2.91)Al(6)Si(1.09) and YbAu(3.86)Al(8)Si(1.14) are divalent at high temperatures.     

Crystal structure, chemical bonding, and phase relations of the novel compound Co4Al(7+x)Si(2-x) (0.27 < or = x < or = 1.05)

The title compound was detected and characterized during a systematic study of the Al-rich part of the Co-Al-Si system. The crystal structure was established via single-crystal X-ray diffraction. It represents a new type of structure of intermetallic compounds (Pearson symbol mC26, space group C2/m). The homogeneity range of the phase Co4Al(7+x)Si(2-x) (0.27(3) < or = x < or = 1.05(2)) and equilibria with neighboring phases were studied by electron probe microanalysis (EPMA) and X-ray powder diffraction. The lattice parameters of the compound were found to vary between Al-poor and Al-rich composition (a = 11.949(1)-12.042(1) A, b = 3.9986(4)-4.0186(4) A, c = 7.6596(8)-7.6637(9) A, and beta = 106.581(7)-106.140(7) degrees). A partial disorder caused by the Al/Si substitution in one of the five main group element positions was found, and different ordering models yielding different Al/Si occupation motifs and different distributions of interatomic distances are discussed in detail. Chemical bonding analysis with the electron localization function (ELF) reveals a covalently bonded Al/Si network and rather ionic interactions between Co and the network.     

Gd(1.33)Pt(3)(Al,Si)(8) and Gd(0.67)Pt(2)(Al,Si)(5): two structures containing a disordered Gd/Al layer grown in liquid aluminum

Gd(1.33)Pt(3)Al(8) was synthesized by the combination of Gd and Pt in excess liquid aluminum. Addition of silicon resulted in the incorporation of a small amount of this element into the material to form the isostructural Gd(1.33)Pt(3)Al(7)Si. Both compounds grow as rodlike crystals with hexagonal cross section. The structures were refined in the rhombohedral space group R(-)3m, with cell parameters a = 4.3359(6) A and c = 38.702(8) A for the ternary and a = 4.3280(8) A and c = 38.62(1) A for the quaternary compound. The structure is comprised of stuffed arsenic-like PtAl(2) layers and disordered Gd/Al layers. Analysis of the hk0 zone reflections indicate the presence of an a = radical 3a supercell, but the structure is not ordered along c, as revealed by the highly diffuse reflections in the 0kl zone photos. Therefore, the compounds are disordered variants of the Gd(4)Pt(9)Al(24) type. Magnetic susceptibility studies reveal antiferromagnetic transitions at 15 K for the ternary and 7 K for the quaternary compound. Variation of the reactant ratio produces a different structure comprised of the same structural blocks, including the disordered Gd/Al layer. Gd(0.67)Pt(2)Al(5) and its quaternary analogue Gd(0.67)Pt(2)Al(4)Si form in the hexagonal system P6(3)/mmc with cell parameters a = 4.2907(3) A and c = 16.388(2) A for the ternary and a = 4.2485(6) A and c = 16.156(3) A for the quaternary compound.     

Phase range of the type-I clathrate Sr8Al(x)Si(46-x) and crystal structure of Sr8Al10Si36

Samples of the type-I clathrate Sr(8)Al(x)Si(46-x) have been prepared by direct reaction of the elements. The type-I clathrate structure (cubic space group Pm3n) which has an Al-Si framework with Sr(2+) guest atoms forms with a narrow composition range of 9.54(6) ≤ x ≤ 10.30(8). Single crystals with composition A(8)Al(10)Si(36) (A = Sr, Ba) have been synthesized. Differential scanning calorimetry (DSC) measurements provide evidence for a peritectic reaction and melting point at ～1268 and ～1421 K for Sr(8)Al(10)Si(36) and Ba(8)Al(10)Si(36), respectively. Comparison of the structures reveals a strong correlation between the 24k-24k framework sites distances and the size of the guest cation. Electronic structure calculation and bonding analysis were carried out for the ordered models with the compositions A(8)Al(6)Si(40) (6c site occupied completely by Al) and A(8)Al(16)Si(30) (16i site occupied completely with Al). Analysis of the distribution of the electron localizability indicator (ELI) confirms that the Si-Si bonds are covalent, the Al-Si bonds are polar covalent, and the guest and the framework bonds are ionic in nature. The Sr(8)Al(6)Si(40) phase has a very small band gap that is closed upon additional Al, as observed in Sr(8)Al(16)Si(30). An explanation for the absence of a semiconducting "Sr(8)Al(16)Si(30)" phase is suggested in light of these findings.     

Structure and white luminescence of Eu-activated (Ba,Sr)(13-x)Al(22-2x)Si(10+2x)O66 materials

The optical properties of Eu-activated (Ba,Sr)(13-x)Al(22-2x)Si(10+2x)O66 materials have been determined after the structural reinvestigation of the hypothetical Ba 13Al 22Si 10O 66 material on the basis of the Gebert's model. The white fluorescence and phosphorescence of the (Ba,Sr)(13-x)Al(22-2x)Si(10+2x)O66:Eu series result from the existence of two broad emission bands associated with (8)H-4f(6)5d(1)-->(8)S-4f(7) transitions peaking at 534 and 438 nm, the intensities of which may be tuned at room temperature via the control of the europium concentration and the substitution of Sr for Ba. This suggests the possibility to adjust the emission of the material to white LED requisites.     

Novel quaternary lanthanum bismuth sulfides Pb(2)La(x)Bi(8-x)(S(14)), Sr(2)La(x)Bi(8-x)S(14), and Cs(2)La(x)Bi(10-x)S(16) with complex structures

The compounds Pb(2)La(x)Bi(8-x)S(14) (I), Sr(2)La(x)Bi(8-x)S(14) (II), and Cs(2)La(x)Bi(10-x)S(16) (III) were synthesized from the corresponding elements or binary sulfides at temperatures above 850 degrees C. Compounds I and II are isostructural, forming a new structure type, while the structure of III is related to the structure of the mineral kobellite. All compounds crystallize in the orthorhombic space group Pnma (No. 62) with a = 21.2592(4) A, b = 4.0418(1) A, c = 28.1718(3) A, Z = 4 for I, a = 21.190(1) A, b = 4.0417(2) A, c = 28.285(2) A, Z = 4 for II and a = 34.893(4) A, b = 4.0697(4) A, c = 21.508(2) A, Z = 4 for III. All compounds exhibit mixed site occupancy between Bi and La. Furthermore, I and II exhibit disorder between the divalent atom (Sr or Pb) and/or La and/or Bi. The structures of I and II consist of thin walls made of two metal-atom-thick NaCl-type blocks running in two opposite directions in the ac plane, forming rhombus-shaped tunnels. These tunnels are filled with Bi(2)Te(3)-type fragments. In the points where the walls intersect they form Gd(2)S(3)-type fragments. The structure of III consists of a complex three-dimensional framework with Cs-filled tunnels. All compounds are semiconductors with band gaps around 1.0 eV, and they melt around 740-860 degrees C.     

Structural and thermochemical chemisorption of CO2 on Li(4+x)(Si(1-x)Al(x))O4 and Li(4-x)(Si(1-x)V(x))O4 solid solutions

Different Li(4)SiO(4) solid solutions containing aluminum (Li(4+x)(Si(1-x)Al(x))O(4)) or vanadium (Li(4-x)(Si(1-x)V(x))O(4)) were prepared by solid state reactions. Samples were characterized by X-ray diffraction and solid state nuclear magnetic resonance. Then, samples were tested as CO(2) captors. Characterization results show that both, aluminum and vanadium ions, occupy silicon sites into the Li(4)SiO(4) lattice. Thus, the dissolution of aluminum is compensated by Li(1+) interstitials, while the dissolution of vanadium leads to lithium vacancies formation. Finally, the CO(2) capture evaluation shows that the aluminum presence into the Li(4)SiO(4) structure highly improves the CO(2) chemisorption, and on the contrary, vanadium addition inhibits it. The differences observed between the CO(2) chemisorption processes are mainly correlated to the different lithium secondary phases produced in each case and their corresponding diffusion properties.     

Composition-structure relationships in polar intermetallics: experimental and theoretical studies of LaNi(1 + x)Al(6 - x) (x = 0.44)

A new ternary aluminide, LaNi(1 + x)Al(6 - x ) (x = 0.44), has been synthesized from La, Ni, and Al in sealed silica tubes. Its structure, determined by single-crystal X-ray diffraction, is tetragonal P4/mmm (No. 123) with Z = 1 and has the lattice parameters a = 4.200(8) and c = 8.080(8) angstroms. Refinement based on Fo2 yielded R1 = 0.0197 and wR2 = 0.020 [I > 2sigmaI]. The compound adopts a structure type previously observed in SrAu2Ga5 and EuAu2Ga5. The atomic arrangement is closely related to the one in BaAl4 as well as in other rare-earth gallide compounds such as LaNi0.6Ga6, HoCoGa5, Ce4Ni2Ga20, Ce4Ni2Ga17, Ce4NiGa18, and Ce3Ni2Ga15. This structure exhibits a large open cavity which may be filled by a guest atom. Band structure calculations using density functional theory have been carried out to understand the stability of this new compound.     

RE2MAl6Si4 (RE = Gd, Tb, Dy; M = Au, Pt): layered quaternary intermetallics featuring CaAl2Si2-type and YNiAl4Ge2-type slabs grown from aluminum flux

Six new intermetallic aluminum silicides--Gd(2)PtAl(6)Si(4), Gd(2)AuAl(6)Si(4), Tb(2)PtAl(6)Si(4), Tb(2)AuAl(6)Si(4), Dy(2)PtAl(6)Si(4), and Dy(2)AuAl(6)Si(4)--have been obtained from reactions carried out in aluminum flux. The structure of these compounds was determined by single-crystal X-ray diffraction. They form in space group Rthremacr;m with cell constants of a = 4.1623(3) A and c = 51.048(5) A for the Gd(2)PtAl(6)Si(4) compound. The crystal structure is comprised of hexagonal nets of rare earth atoms alternating with two kinds of layers that have been observed in other multinary aluminide intermetallic compounds (CaAl(2)Si(2) and YNiAl(4)Ge(2)). All six RE(2)MAl(6)Si(4) compounds show antiferromagnetic transitions at low temperatures (T(N) < 20 K); magnetization studies of the Dy compounds show metamagnetic behavior with reorientation of spins at 6000 G. Band structure calculations indicate that the AlSi puckered hexagonal sheets in this structure are electronically distinct from the other surrounding structural motifs.     

Electron-precise/deficient La(5-x)Ca(x)Ge4 (3.4 < or = x < or = 3.8) and Ce(5-x)Ca(x)Ge4 (3.0 < or = x < or = 3.3): probing low-valence electron concentrations in metal-rich Gd5Si4-type germanides

We report for the first time the syntheses of electron-precise/deficient alloys, Ln5-xCaxGe4 (Ln = La, Ce; x = 3.37, 3.66, 3.82 for La; x = 3.00, 3.20, 3.26 for Ce), in the metal-rich R5Tt4 Zintl system (R = rare earth metal; Tt = Si, Ge). The new alloys extend the phase width from electron-rich to open-shell electron-deficient region in the metal-rich Zintl system and demonstrate possible occurrence of varied electron deficiencies in Zintl phases without structural changes, as a result of other existing structure-forming factors.     

H(x)TeV9O28]((5-x)-) (x=1 and 2): vanadotellurates with decavanadate structure

Two new vanadotellurates, [HTeV(9)O(28)](4-) and [H(2)TeV(9)O(28)](3-) have been synthesized and structurally characterized as tetra-n-butylammonium (TBA) salts: TBA(4)[HTeV(9)O(28)]·2CH(3)CN [triclinic, space group P ?1, a = 16.7102(6) ?, b = 17.4680(7) ?, c = 17.9634(7) ?, α = 74.412(1)°, β = 67.494(1)°, γ = 74.160(2)°, Z = 2] and TBA(3)[H(2)TeV(9)O(28)] [monoclinic, space group P2(1)/c, a = 13.0013(5) ?, b = 19.157(1) ?, c = 28.453(1) ?, β = 97.222(2)°, Z = 4]. The results of the structural analyses indicate that the four O atoms that bridge two V atoms on the Te side are the most basic ones in the structure. The results of density-functional theory (DFT) calculations support this view.     

Mullite-derivative Bi2Mn(x)Al(7-x)O14 (x~1): structure determination by powder X-ray diffraction from a multi-phase sample

As a supplementary method to single crystal X-ray diffraction (XRD), nowadays crystal structure determination by powder XRD has become popular, especially for those areas with difficulties getting high quality single crystals. Here we observed an intermediate phase Bi(2)Mn(x)Al(7-x)O(14) (x~1) during the decomposition of mullite-Bi(2)Mn(x)Al(4-x)O(9+δ) (solid solution of Bi(2)Mn(4)O(10)-Bi(2)Al(4)O(9)). As a metastable phase, it started to decompose while forming, thus no single-phase sample can be obtained. We successfully determined its structure by powder XRD from a multi-phase sample. A modified Le Bail fitting using the atomic structure information of known impurities showed a more reliable intensity extraction from a multi-phase powder XRD than that without using atomic structures for the known impurities. The charge-flipping algorithm and Monte-Carlo based simulated annealing technique were then applied to obtain the full structural model. In principle, this strategy is applicable to more complex problems, and not limited to the oxide materials. Bi(2)Mn(x)Al(7-x)O(14) possesses a mullite-related structure. There are one tetrahedral and two octahedral sites for Mn and Al, where disordering with substantial site preferences is observed. Specifically, M1O(6) and M3O(6) octahedra share edges along the c-direction with the periodicity of 1 : 2. These octahedral chains are further connected into a 3D structure through M2O(4) dimmers and Bi.     

Hydrogen desorption kinetics from the Si(1-x)Gex(100)-(2x1) surface

We study the influence of germanium atoms upon molecular hydrogen desorption energetics using density functional cluster calculations. A three-dimer cluster is used to model the Si((1-x))Ge(x)(100)-(2x1) surface. The relative stabilities of the various monohydride and clean surface configurations are computed. We also compute the energy barriers for desorption from silicon, germanium, and mixed dimers with various neighboring configurations of silicon and germanium atoms. Our results indicate that there are two desorption channels from mixed dimers, one with an energy barrier close to that for desorption from germanium dimers and one with an energy barrier close to that for desorption from silicon dimers. Coupled with the preferential formation of mixed dimers over silicon or germanium dimers on the surface, our results suggest that the low barrier mixed dimer channel plays an important role in hydrogen desorption from silicon-germanium surfaces. A simple kinetics model is used to show that reasonable thermal desorption spectra result from incorporating this channel into the mechanism for hydrogen desorption. Our results help to resolve the discrepancy between the surface germanium coverage found from thermal desorption spectra analysis, and the results of composition measurements using photoemission experiments. We also find from our cluster calculations that germanium dimers exert little influence upon the hydrogen desorption barriers of neighboring silicon or germanium dimers. However, a relatively larger effect upon the desorption barrier is observed in our calculations when germanium atoms are present in the second layer.     

Synthesis and Hydrolysis of Hybridized Silicon Alkoxide: Si(OEt)x(OBut)4-x. Part II: Hydrolysis of the Si(OEt)x(OBut)4-x

The hydrolyzation behavior of the Si(OEt)_x(OBu^t)_4-x synthesized in part I was investigated by gas chromatogram/mass spectrum (GC/MS) technique. In the Si(OEt)_x(OBu^t)_4-x, Si(OEt)(OBu^t)₃ showed more rapid hydrolysis than Si(OEt)₂(OBu^t)₂, especially in the initial stages of the hydrolyzation. The dimer and trimer formations along with the sol-gel course were followed during the hydrolyzation process.     

Crystal structure, coloring problem and magnetism of Gd(5-x)Zr(x)Si4

Ternary Gd(5-x)Zr(x)Si(4) silicides were synthesized by arc melting of the constituent elements and subsequent heat treatments. The Gd(5-x)Zr(x)Si(4) phases adopt the orthorhombic Gd(5)Si(4)-type (space group Pnma) structure for x≤ 0.25 and the tetragonal Zr(5)Si(4)-type (space group P4(1)2(1)2) structure for x≥ 1.0, respectively. The samples with intermediate compositions contain two phases. Single-crystal X-ray diffraction reveals a preferential site occupancy for Zr on the three metal sites in the order of M3 > M2 > M1. Size arguments based on the local coordination environments suggest that the larger Gd atoms preferentially occupy the larger M1 site, while the smaller Zr atoms tend to occupy the smaller metal sites, M2 and M3. Tight-binding linear-muffin-tin orbital calculations illustrate a role of the metal-silicon bonds in the metal site occupation. An increase in the valence electron concentration through the Zr substitution weakens the Si-Si interactions but enhances the metal-silicon and metal-metal interactions. The Curie temperature of Gd(5-x)Zr(x)Si(4) decreases gradually with the increasing Zr content.     

A new aluminum hydroxide octamer, [Al8(OH)14(H2O)18](SO4)5 x 16H2O

A new aluminum hydroxide cluster with eight Al(III) ions linked together by a series of hydroxyl bridges as a sulfate salt has been synthesized from aqueous solution and characterized by X-ray crystallography and 27Al NMR spectroscopy.     

Synthesis and Hydrolysis of Hybridized Silicon Alkoxide: Si(OEt)x(OBut)4-x. Part I: Synthesis and Identification of the Si(OEt)x(OBut)4-x

Using silicon tetrachloride (SiCl₄), tert-butanol (t-BuOH), ethanol (EtOH) and NH₃, the hybridized silicon ethoxide 3-tert-butoxide (Si(OEt)_x(OBu^t)_4-x) was synthesized and the configuration of the material was investigated by FT-IR,¹ H and ¹³C NMR and gas chromatogram/mass spectrum (GC/MS) techniques. The results confirm that both the ethoxy and the tert-butoxy groups have been attached to silicon atoms. Furthermore, the alkoxy group types and their relative amounts in the alkoxide were also determined by ¹H and ¹³C NMR and GC/MS.