Conductivity increase of amorphous Si and Ge by Mn

Amorphous Si and Ge are doped with Mn by co-sputtering. The electrical conductivity is incresed by as much as a factor of 10⁶～10⁷ in some cases by the addition of several at .% Mn. The temperature dependence of the conductivity shows the variable range hopping conduction for both samples with and without Mn. The results can be interpreted by the presence of two conduction processes; the variable range hopping through dangling bonds and that through Mn sites.     

Phononless hopping conduction in two-dimensional layers of quantum dots

Regularities are studied in charge transport due to the hopping conduction of holes along two-dimensional layers of Ge quantum dots in Si. It is shown that the temperature dependence of the conductivity obeys the Efros-Shklovskii law. It is found that the effective localization radius of charge carriers in quantum dots varies nonmonotonically upon filling quantum dots with holes, which is explained by the successive filling of electron shells. The preexponential factor of the hopping conductivity ceases to depend on temperature at low temperatures (T<10 K) and oscillates as the degree of filling quantum dots with holes varies, assuming values divisible by the conductance quantum e²/h. The results obtained indicate that a transition from phonon-assisted hopping conduction to phononless charge transfer occurs as the temperature decreases. The Coulomb interaction of localized charge carriers has a dominant role in these phononless processes.     

A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge: Ga

A model of hopping conduction between nearest neighbors is developed in which the majority and compensating dopant atoms are assumed to form a unified simple cubic lattice in a crystalline matrix. The hopping of carriers occurs when thermally activated “equalization” of majority impurity levels takes place, while the compensating impurities block the corresponding sites. The range of relatively high temperatures is considered in which the interactions giving rise to a Coulomb gap can be neglected and the density of states of the majority impurity band is Gaussian. The concentration dependences of the activation energy for hopping conductivity ? ₃ (nonmonotonic and having a maximum) and the preexponential factor σ₃ are found. The results are compared with experimental data obtained by different authors for neutron-doped Ge: Ga.     

Hopping and band transport in amorphized semiconductors

Crystalline samples of Si, GaAs, GaP, InP, and CdTe have been rendered amorphous by bombardment with rare gas ions. DC conductivity and thermopower have been measured as a function of temperature in the interval between 15–500 K. In all cases, electron transport at low temperatures is characterized by non-simply activated processes of the hopping type transport, whereas band transport is observed at higher temperatures. The common and individual features of the different amorphous systems are discussed within the framework of existing transport theories.     

Hall effect in hopping conduction in an ensemble of quantum dots

The Hall effect in heterostructures with a two-dimensional array of tunneling-coupled Ge quantum dots grown by molecular-beam epitaxy on Si is investigated. The conductivity of these structures in zero magnetic field at 4.2 K varies in the range of 10^?12?10^?4 Ω^?1, which includes both the diffusive transport under weak localization conditions and hopping conduction. It is shown that the Hall effect can be discerned against the magnetoresistance-related background in both high- and low-conductivity structures. The Hall coefficient in the hopping regime exhibits a nonmonotonic dependence on the occupancy of quantum dots by holes. This behavior correlates with that of the localization length of the hole wavefunctions.     

Electronic Structure And Magnetism of Novel Diluted Magnetic Semiconductors CdGeP 2 : Mn and ZnGeP 2 : Mn

Chalcopyrite II-IV-V 2 semiconductors CdGeP 2 : Mn and ZnGeP 2 : Mn are new types of diluted magnetic semiconductors (DMSs). Since their ferromagnetic Curie temperatures are much higher than room temperature, these DMSs are good candidates for materials to be used in spintronics devices. Their electronic and magnetic structures have been investigated using the first-principles calculations based on the Korringa-Kohn-Rostoker coherent-potential-approximation and local-density-approximation (KKR-CPA-LDA) methods. When Cd or Zn atoms are substituted by Mn atoms, the ground state magnetic structure is spinglass-like. On the other hand, if Mn atoms substitute Ge atoms, the system becomes ferromagnetic through the double-exchange mechanism. However, the calculation of the formation energies shows that this system is not energetically favorable. Instead, the system with vacancies (Cd, Vc, Mn)GeP 2 or a non-stoichiometric (Cd, Ge, Mn)GeP 2 are also ferromagnetic and, moreover, energetically stable. We conclude that either of these variants possess a ferromagnetic phase of the kind CdGeP 2 : Mn. Similar conclusions are obtained for ZnGeP 2 : Mn.     

High-temperature ferromagnetism in laser-deposited layers of silicon and germanium doped with manganese or iron impurities

The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T_c diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T_g=(20-550) °C on single-crystal GaAs or Al₂O₃ substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T_g, for Si:Mn/GaAs layers with T_c≈400 K is shown to be about 400 °C. The Si:Mn/Al₂O₃ layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, Si-based ferromagnetic layers have strongly different magnetic and electric properties in case of uniformly doped structures and digital alloys. Positive results of the Fermi level variation effect on the improvement of Si- and Ge-based DMS layers have been gained on the use of additional doping with shallow acceptor Al impurity which contributes to the increase of the hole concentration and the RKKY exchange interaction of 3d-ions. The Ge:(Mn, Al)/GaAs or Ge (Mn, Al)/Si layers grown at 20 °C feature surprising extraordinary angular dependence of FMR.     

金属间化合物DyMn_2Ge_2的自发磁相变和场诱导的磁相变

在 10— 80 0K的温度范围内用X射线衍射方法测量了DyMn2 Ge2 化合物的晶格常数与温度的变化关系 ,观察到高温时DyMn2 Ge2 由顺磁状态到反铁磁状态的自发磁相变伴随着晶格常数a的负的磁弹性异常现象 .在4 2K— 2 0 0K的温度范围内测量了DyMn2 Ge2 的交流磁化率 .在交换相互作用的分子场模型近似下 ,从理论上分析讨论了DyMn2 Ge2 的低温自发磁相变和场诱导的磁相变 .计算了DyMn2 Ge2 单晶的磁化强度与温度的变化关系以及不同温度下外磁场沿晶轴c方向时的磁化曲线 .理论分析和计算结果表明 ,温度低于 33K时在DyMn2 Ge2 中观察到的场诱导的一级磁相变为由亚铁磁状态 (Fi)到中间态 (IS)相变 .     

Electrical transport in a-As2Se3 containing metallic impurities

Significant changes of the hole drift mobility are observed in a-As₂Se₃ containing concentrations less than ～ 10²⁰ cm^?3 of metallic impurities (Mn, Fe, Ni, Cu, Zn, Ga, In, Tl and Na). Depending upon metal concentration the results suggest a modification of the hopping transport channel in Ga, In and Tl doped samples and the buildup of new traps that are either isoenergetic with the intrinsic trap population (Tl, Ga, In, Cu) or lie deeper in the gap (Mn, Fe, Ni, Cu). Trap-limited hopping transport provides a consistent explanation of the experimental data.     

New diluted ferromagnets based on diamond-like semiconductors GaSb,InSb, InAs,Ge, and Si,supersaturated with manganese or iron impurities during laser epitaxy

The electric, magnetic, and magneto-optical properties of thin (50–100 nm) GaSb:Mn, InSb:Mn, InAs:Mn, Ge:Mn, Ge:Fe, Si:Mn, and Si:Fe layers with a Curie point up to 500 K, obtained by laser plasma deposition in vacuum in the case of strong supersaturation of a solid solution with a 3d impurity, have been experimentally investigated.     

氢化非晶硅的低温输运

从低温跳跃电导模型出发,计算低温下的跳跃频率,热发射率及输运能级随温度变化,分析讨论了非晶硅热激电导的低温峰。认为输运机制的变化是氢化非晶硅热激电导低温峰T_M独立于起始温度T₀的主要原因,T_M相应于输运机制变化的温度。 关键词：     

Ferromagnetism in epitaxial germanium and silicon layers supersaturated with managanese and iron impurities

The possibility of laser synthesis of diluted magnetic semiconductors based on germanium and silicon doped with manganese or iron up to 10–15 at % has been shown. According to data on the electronic levels of 3d atoms in semiconductors, Mn and Fe impurities are most preferable for realizing ferromagnetism in Ge and Si through the Ruderman-Kittel-Kasuya-Yosida mechanism. Epitaxial Ge and Si layers 50–110 nm in thickness were grown on gallium arsenide or sapphire single crystal substrates heated to 200–480°C. The content of a 3d impurity has been measured by x-ray spectroscopy. The ferromagnetism of layers and high magnetic and acceptor activities of Mn in Ge, as well as of Mn and Fe in Si, are manifested in the observation of the Kerr effect, anomalous Hall effect, high hole conductivity, and anisotropic ferromagnetic resonance at 77–500 K. According to the ferromagnetic resonance data, the Curie point of Ge:Mn and Si:Mn on a GaAs substrate and of Si:Fe on an Al₂O₃ substrate is no lower than 420, 500, and 77 K, respectively.     

Laser-plasma deposited nanosized layers of ferromagnetic semiconductors and silicon- and germanium-based Heusler alloys

The electric, magnetic resonance, and magneto-optical properties of thin laser-plasma deposited 50–100-nm layers of diluted magnetic semiconductors Ge:(Mn, Al)/GaAs, Ge:(Mn, Al)/Si, and Heusler alloys Co₂MnSi/Si, Co₂MnSi/GaAs, and Fe₂CrSi/GaAs with T _c > 293 K were studied. Anomalous ferromagnetic resonance in Ge:(Mn, Al) layers, ferromagnetism in CoSi/Si characterized by strong hysteresis in the magneto-optic Kerr effect, and the anomalous Hall effect at 293 K were observed.     

X-ray photoelectron and auger spectroscopy analysis of Ge:Mn-based magnetic semiconductor layers

Thin (～60 nm) germanium layers supersaturated with a manganese impurity of 10–16 at % have been studied by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The layers have been fabricated by pulsed laser deposition onto a semi-insulating single-crystal GaAs substrate. The results of XPS analysis of the Ge:Mn layers reveal a change in the line shape of germanium and manganese (2p) in the surface region compared to deeper layers, which indicates a transition from the oxidized form of the base material (Ge²⁺ and Ge¹⁺) and impurity (Mn²⁺) near the surface to the unoxidized state of germanium (Ge ⁰) and manganese (Mn⁰) in the interior of the layer. The XPS spectra of the valence electrons of the Ge:Mn structure indicate that the density of states in the valence band of the ferromagnetic Ge:Mn structures is caused not only by mechanical mixing of germanium and manganese. The composition of heterogeneous inclusions in Ge:Mn films has been studied using scanning Auger microscopy.     

Magnetic and electrical properties of zinc selenide crystals containing disorder

The electrical and magnetic properties of ZnSe single crystals containing disorder have been studied between temperatures 290K and 900K. The study of the magnetic properties has been extended to low temperatures (100K). Paramagnetism has been found to appear at high temperatures (460–900K). From the fact that this paramagnetism is proportional to e^?δE/kT, it is suggested that localized states of single occupancy are created by thermal excitation. The study of the magnetic properties has been of help in ascertaining the nature of the transport (band conduction or hopping conduction) and in finding the hopping energy and excitation energy separately. It has also been shown from this that both band conduction and hopping conduction exist simultaneously in the sample. A study of the thermo electric power (t.e.p.) shows that below 450K current is carried by electrons in the conduction band and above by hopping of holes.     

纳米硅薄膜的低温电输运机制

在很宽的温度范围(500—20K)研究了本征和不同掺磷浓度的纳米硅薄膜的电输运现象.发现 原先的异质结量子点隧穿(HQD)模型能很好地解释薄膜在高温下(500—200K)的电导曲线,但 明显偏离低温下的实验值.低温电导(100—20K)具有单一的激活能W,并与k_BT值 大小相当(W～1—3k_BT),呈现出Hopping电导的特征.对HQD模型做了修正,认为 纳米硅同时存在两种输运机制：热激发辅助的电子隧穿和费米能级附近定域态之间的Hoppin g电导.高温时(T 关键词： 纳米硅薄膜 低温电导 电输运     

Cd3Al2Ge3O12:Mn2+锗酸盐石榴石光谱性质

本文报道室温下Cd₃Al₂Ge₃O₁₂:Mn²⁺(简称CAGG:Mn²⁺)锗酸盐石榴石的漫反射光谱、激发和发射光谱.在UV光激发下,在CAGG中Mn²⁺离子发射强黄光,这是基质到Mn²⁺离子无辐射能量传递的结果.Mn²⁺的黄发射带是由一个弱的红带和一个强的绿带所组成.讨论了这两个Mn²⁺发射带的起因.     

Coulomb effects and thermopower in elemental covalent amorphous semiconductors

It is shown that the Coulomb effects resulting in a single-occupancy of localized states in the vicinity of the chemical potential in the mobility gap yield a simple possibility to explain both the magnitude and the temperature insensitiveness of the thermoelectric power of amorphous Ge and Si in the phonon-assisted hopping regime observed at low temperatures.The main physical ideas of this work resulted from a collaboration with Drs. A.Aldea and L.Bányai (see ref. [28]). The present author acknowledges with pleasure their significant contribution to this work.     

Many-electron Coulomb correlations in hopping transport along layers of quantum dots

Experimental data are analyzed on the hopping transport of holes in two-dimensional layers of Ge/Si(001) quantum dots (QDs) under conditions of the long-range Coulomb interaction of charge carriers localized in QDs, when the temperature dependence of the conductivity obeys the Efros-Shklovskii law. It is found that the parameters of hopping conduction significantly deviate from the predictions of the model of one-electron excitations in “Coulomb glasses.” Many-particle Coulomb correlations associated with the motion of holes localized in QDs play a decisive role in the processes of hopping charge transfer between QDs. These correlations lead to a substantial decrease in the Coulomb barriers for the tunneling of charge carriers.     

Hopping spectroscopy in doped germanium near the metal-insulator transition

The density of states (DOS) in the vicinity of the Fermi level controls all transport phenomena at low temperatures near the metal-insulator transition (MIT). The well-known method for DOS-determination on the metallic side of the MIT, the so-called “tunneling spectroscopy”, is inapplicable on the insulating side because of the high sample resistance at low temperatures. In this work a new method for DOS-determination on the insulating side is presented. The method is based on the measurements of variable range hopping (VRH) resistance in magnetic fields. By analogy this method can be called “hopping spectroscopy”.