Ferromagnetic resonance in monocrystalline spin valves CoFeB/Ta/CoFeB and CoFeB films with perpendicular magnetic anisotropy

Orientation dependences of ferromagnetic resonance in a MgO/CoFeB/MgO/Ta film with one ferromagnetic layer (monolayer) and in a MgO/CoFeB/Ta/CoFeB/MgO/Ta spin valve containing two single-crystal ferromagnetic CoFeB layers divided by a nonmagnetic Ta layer (bilayer) were investigated. Analysis of the orientation dependences of the structures with perpendicular magnetic anisotropy allowed calculating constants of magnetic anisotropy and damping factors. Physical reasons underlying the differences between these parameters in one- and two-layered structures are discussed.     

Anomalous Hall effect in perpendicular CoFeB thin films

Our recent research achievements in the perpendicular magnetic anisotropy （PMA） properties of the CoFeB sand- wiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin fihn. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeBFFa thin film with a thick MgO layer, which opens a door tbr future device applications of perpendicular ferromagnetic thin films.     

Magnetization Reversal of Ferromagnetic CoFeB Films and CoFeB/Ta/CoFeB Heterostructures in the Stray Field of Fe/Fe3O4 Nanoparticles

Journal of Experimental and Theoretical Physics - The magnetization reversal of the MgO/CoFeB/Ta/CoFeB/MgO/Ta/GaAs heterostructures and the ultrathin MgO/CoFeB/MgO/Ta/GaAs films with a...     

过量B的Ta/CoFeB/MgO薄膜垂直各向异性和温度稳定性的增强

以CoFeB/MgO为核心单元的垂直各向异性薄膜体系和相关的垂直磁隧道结已获得广泛研究,其中CoFeB的B含量基本都保持为原子比20%.本文采用磁控溅射制备了Ta/(Co0.5Fe0.5)1-xBx/MgO三明治结构及生长顺序相反的系列薄膜,并在573—623K进行真空退火,研究了样品垂直各向异性随B成分的变化.结果显示,当B含量减小到10%时,Ta/CoFeB/MgO体系的垂直各向异性明显降低;相反,当B含量增加至30%时,该体系的垂直各向异性明显增强;发现在高B含量的情形下,样品的垂直各向异性大小与温度稳定性均与三明治结构的生长顺序密切相关;获得了具有优异温度稳定性的垂直磁化MgO/CoFeB/Ta样品.结果表明适当增加B含量是增强CoFeB/MgO体系垂直各向异性和温度稳定性的有效途径之一.     

Strong anti-strain capacity of CoFeB/MgO interface on electronic structure and state coupling

Electronic structure and spin-related state coupling at ferromagnetic material(FM)/MgO(FM = Fe, CoFe, CoFeB)interfaces under biaxial strain are evaluated using the first-principles calculations. The CoFeB/MgO interface, which is superior to the Fe/MgO and CoFe/MgO interfaces, can markedly maintain stable and effective coupling channels for majorityspin ?_1 state under large biaxial strain. Bonding interactions between Fe, Co, and B atoms and the electron transfer between Bloch states are responsible for the redistribution of the majority-spin ?_1 state, directly influencing the coupling effect for the strained interfaces. Layer-projected wave function of the majority-spin ?_1 state suggests slower decay rate and more stable transport property in the CoFeB/MgO interface, which is expected to maintain a higher tunneling magnetoresistance(TMR) value under large biaxial strain. This work reveals the internal mechanism for the state coupling at strained FM/MgO interfaces. This study may provide some references to the design and manufacturing of magnetic tunnel junctions with high tunneling magnetoresistance effect.     

Large planar Hall effect in perpendicularly magnetized W/CoFeB/MgO structures

The planar Hall effect (PHE) in W/CoFeB/MgO structure with perpendicular magnetic anisotropy was investigated as a function of CoFeB thickness (t_CoFeB). The PHE is measured by sweeping the in-plane magnetic field at various azimuthal angles as well as by rotating strong magnetic field which is enough to saturate the magnetization. We observed a huge PHE in the W/CoFeB/MgO sample, which is even larger than anomalous Hall effect (AHE). This is distinct from the results in Ta/CoFeB/MgO samples showing a much smaller PHE than AHE. Since the PHE is insensitive to the t_CoFeB while the AHE is proportional to the t_CoFeB, the unprecedented PHE can be attributed to the W layer with a large spin-orbit coupling.     

Magnetoresistance and magnetization studies through a Cu interlayer in spin valves of NiFe/Cu/NiFe/FeMn

The influence of the Cu layer thickness on the magnetic and magnetotransport properties has been investigated in Ta/NiFe/Cu/NiFe/FeMn spin valves. The magnetization and magnetoresistance measurements were carried out for magnetic field applied along the easy-axis direction. A phenomenological model, which assumes formation of a planar domain wall at the anti-ferromagnetic side of the interfaces as well as bilinear coupling between the ferromagnetic layers, was used to derive the anisotropy characteristics and orientation of each NiFe layer magnetization. The anisotropy and spin valve magnetoresistance were simulated numerically and compared with the experiment. It was found that the anisotropy magnetoresistance is negligible and that there is a poor agreement for the spin-valve one, which was attributed to the model (valid for ferromagnetic layers in single-domain state only) used for its calculation. It was found that the increase of the Cu layer thickness provokes a decrease of the interdiffusion between the NiFe and FeMn layers, and, as consequence, changes of the uniaxial anisotropy of the pinned NiFe layer, of the exchange interaction between the pinned NiFe layer and the FeMn ones, as well as of the exchange-bias field of the pinned NiFe layer.     

Investigation of ferromagnetic resonance and damping properties of CoFeB

In this study, the influences of thin film thickness and post-annealing process on the magnetic properties of CoFeB thin films were investigated. The angular dependency and linewidth of the ferromagnetic resonance signal were used to explore the magnetic behavior of sputtered single-layer and trilayer thin film stacks of CoFeB. A micromagnetic simulation model was employed based on the metropolis algorithm comprising the demagnetizing field and in-plane induced uniaxial anisotropy terms with all relevant contributions. Our results reveal that the direction of magnetization changes from in-plane to out-of-plane as a result of the annealing process and induces a perpendicular magnetic anisotropy in the 1-nm thick CoFeB thin film. The ferromagnetic resonance (FMR) linewidth can be defined well by the intrinsic Gilbert damping effect and the magnetic inhomogeneity contribution in both as-grown and annealed samples. The difference between the linewidths of the single and trilayer film is mainly caused by the spin pumping effect on damping which is associated with the interface layers.     

Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

To study the influence of CoFeB/MgO interface on tunneling magnetoresistance(TMR),different structures of magnetic tunnel junctions(MTJs) are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy,a physical property measurement system,x-ray photoelectron spectroscopy,and transmission electron microscopy.The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface,which occurs in CoFeB/MgO/CoFeB MTJs.The inherent properties of the CoFeB/MgO/CoFeB,CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions.The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs.Based on the experimental results and theoretical analysis,it is believed that in CoFeB/MgO/CoFeB MTJs,the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR,and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation,and then increasing TMR.     

Magnetoelectric Effect in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

JETP Letters - The possibility of electrical control of the interlayer exchange interaction in CoFeB/MgO/CoFeB tunnel junctions exhibiting magnetoresistance of ~200% is studied. It is shown that...     

X-ray scattering study on the electric field-induced interfacial magnetic anisotropy modulation at CoFeB / MgO interfaces

The electric field-induced modifications of magnetic anisotropy in CoFeB/MgO systems are studied using X-ray resonant magnetic scattering and magneto-optical Kerr effect. Voltage dependent changes of the magnetic anisotropy of −12.7 fJ/Vm and −8.32 fJ/Vm are observed for Ta/CoFeB/MgO and Hf/CoFeB/MgO systems, respectively. This implies that the interfacial perpendicular magnetic anisotropy is reduced (enhanced) when electron density is increased (decreased). X-ray resonant magnetic scattering measurements reveal that the small in-plane magnetic component of the remanent state of CoFeB/MgO systems with weak magnetic anisotropy changes depending on the applied voltage leading to modification of the magnetic anisotropy at the CoFeB/MgO interface.     

Mo覆盖层对MgO/CoFeB/Mo结构磁各向异性的影响

研究了Mo覆盖层厚度对MgO/CoFeB结构磁各向异性的影响. 研究发现, 加平行磁场生长出来的MgO/CoFeB/Mo样品表现为面内各向异性, 并且随着CoFeB的厚度减小, 面内各向异性逐渐减弱; 在CoFeB厚度减小到1.1 nm时, 仍可以保持面内各向异性, 垂直方向的外加饱和场逐渐减少; 厚度在0.9 nm及以下的情况下, 面内各向异性消失. 改变Mo覆盖层厚度, 当t_Mo= 1.6 nm时, 垂直方向的饱和场最小. 当生长过程的磁场变为垂直磁场时, 不同厚度的Mo覆盖层对MgO/CoFeB 的磁各向异性影响不同. Mo厚度在1 nm及以下时MgO/CoFeB/Mo样品表现为面内各向异性, Mo覆盖层厚度在1.2和5 nm之间时样品出现了垂直磁各向异性; 并且垂直方向的矫顽力也发生了变化, Mo覆盖层厚度为1.4 nm时样品的磁滞损耗会大一些.     

Crystallization characteristics of a middle CoFeB layer in a double MgO barrier magnetic tunnel junction

The crystallization characteristics of a middle CoFeB free layer in a magnetic tunnel junction (MTJ) with double MgO barriers were investigated by tunneling magnetoresistance (TMR) measurements of patterned cells across an 8-inch wafer. The MTJ structure was designed to have two CoFeB free layers and one bottom pinned layer, separated by MgO tunnel barriers. The observed resistance showed three types of TMR curves depending on the crystallization of the middle CoFeB layer. From the analysis of TMR curves, coherent crystallization of the middle CoFeB layer with the top and bottom MgO barriers was found to occur non-uniformly: About 80% of the MTJ cells in the wafer exhibited coherent crystallization of the middle CoFeB layers with the bottom MgO tunnel barrier, while others had coherent crystallization with the top MgO tunnel barrier or both barriers. This non-uniform crystallization of the middle CoFeB layer in a double MTJ was also clearly observed in tunneling electron microscopy images. Thus, control of the crystallization of the middle CoFeB layer is important for optimizing the MTJ with double MgO barriers, and especially for the fabrication of double barrier MTJ on a large area substrate.     

CoFeB/AlOx/Ta及AlOx/CoFeB/Ta结构中垂直易磁化效应的研究

本文详细研究了在不同氧化层和铁磁层厚度情况下, 底层CoFeB/AlO_x/Ta结构和 顶层AlO_x/CoFeB/Ta结构中的垂直磁各向异性. 在底层CoFeB/AlO_x/Ta结构中观察到了垂直磁化的磁滞回线, 证明了其垂直易磁化效应的存在; 而在顶层AlO_x/CoFeB/Ta结构中却没有观察到类似的磁滞回线. 对这种对称结构中的非对称现象进行了分析. 研究还发现不同的氧化层和铁磁层厚度均会影响层间界面相互作用的强度, 从而导致结构的垂直磁化曲线矫顽力大小发生改变. 这项研究将对基于AlO_x氧化层垂直磁隧道结的研制具有重要的意义. 关键词： 垂直磁各向异性 磁隧道结 随机存储器     

Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers

The dependence of perpendicular magnetic anisotropy(PMA) on the barrier layer MgO thickness in MgO/CoFeB/Ta multilayers is investigated.The results show that the strongest PMA occurs in a small window of about2-4nm with the increase of MgO thickness from l-10 nm.The crystalline degree of MgO and the change of interatomic distance along the out-of-plane direction may be the main reasons for the change of PMA in these multilayers.Moreover,the roughnesses of 2- and 4-nm-thick MgO samples are 3.163 and 1.8nm,respectively,and both the samples show PMA.These results could be used to tune the magnetic characteristic of the ultra thin CoFeB film for future applications in perpendicular magnetic devices.     

EuS/Ta异质结的极大磁电阻效应

在铁磁/超导异质结中,铁磁体的交换场通过近邻效应将导致超导体准粒子态密度的塞曼劈裂.基于该效应,在外磁场不强的情况下,通过外加磁场可以有效地调节铁磁/超导界面处的交换作用,从而实现超导体在正常态和超导态之间转换,产生极大磁电阻.本文利用脉冲激光沉积方法制备了EuS/Ta异质结并研究了其电磁特性.Ta在3.6 K以下为超导态,EuS在20 K以下为铁磁态.在2 K时,EuS/Ta异质结中可观测蝴蝶型磁滞回线,证明在低磁场下(<±0.18 T)异质结中EuS铁磁态和Ta超导态共存.磁输运测试表明,通过施加外磁场可以有效调节EuS的交换场,随着交换场的增大,同时也加强了界面处的交换作用,从而抑制Ta的超导态,实现了Ta在超导态和正常态之间的转变,在EuS/Ta异质结中观测到了高达144000%的磁电阻.本文制备的EuS/Ta异质结具有极大磁电阻效应,在自旋电子学器件中有潜在的应用前景.     

Ferromagnetic resonance spin pumping in CoFeB with highly resistive non-magnetic electrodes

The relative contribution of spin pumping and spin rectification from the ferromagnetic resonance of CoFeB/non-magnetic bilayers was investigated as a function of non-magnetic electrode resistance. Samples with highly resistive electrodes of Ta or Ti exhibit a stronger spin rectification signal, which may result in over-(or under-) estimation of the spin Hall angle of the materials, while those with low resistive electrodes of Pt or Pd show the domination of the inverse spin Hall effect from spin pumping. By comparison with samples of single FM layer and an inverted structure, we provide a proper analysis method to extract spin pumping contribution.     

铁磁异质结构中的超快自旋流调制实现相干太赫兹辐射

利用飞秒激光脉冲在生长于二氧化硅衬底上的W/CoFeB/Pt和Ta/CoFeB/Pt两类铁磁/非磁性金属异质结构中实现高效、宽带的相干THz脉冲辐射.实验中, THz脉冲的相位随外加磁场的反转而反转,表明THz辐射与样品的磁有序密切相关.为了考察三层膜结构THz辐射的物理机制,分别研究了构成三层膜结构的双层异质结构(包括CoFeB/W, CoFeB/Pt和CoFeB/Ta)的THz辐射.实验结果都与逆自旋霍尔效应相符合, W/CoFeB/Pt和Ta/CoFeB/Pt三层膜结构所辐射的THz强度优于同等激发功率下的ZnTe (厚度0.5 mm)晶体.此外,还研究了两款异质结构和ZnTe的THz辐射强度与激发光脉冲能量密度的关系,发现Ta/CoFeB/Pt的饱和能量密度略大于W/CoFeB/Pt的饱和能量密度,表明自旋电子在Ta/CoFeB/Pt中的界面积累效应相对较小.     

The origin of spin current in YIG/nonmagnetic metal multilayers at ferromagnetic resonance

Spin pumping in yttrium-iron-garnet(YIG)/nonmagnetic-metal(NM) layer systems under ferromagnetic resonance(FMR) conditions is a popular method of generating spin current in the NM layer.A good understanding of the spin current source is essential in extracting spin Hall angle of the NM and in potential spintronics applications.It is widely believed that spin current is pumped from precessing YIG magnetization into NM layer.Here,by combining microwave absorption and DC-voltage measurements on thin YIG/Pt and YIG/NM_1/NM_2(NM_1 =Cu or Al,NM_2 =Pt or Ta),we unambiguously showed that spin current in NM,instead of from the precessing YIG magnetization,came from the magnetized NM surface(in contact with thin YIG),either due to the magnetic proximity effect(MPE) or from the inevitable diffused Fe ions from YIG to NM.This conclusion is reached through analyzing the FMR microwave absorption peaks with the DC-voltage peak from the inverse spin Hall effect(ISHE).The voltage signal is attributed to the magnetized NM surface,hardly observed in the conventional FMR experiments,and was greatly amplified when the electrical detection circuit was switched on.     

CoFeB/MgO不连续多层纳米软磁薄膜微波电磁特性

采用直流/射频磁控溅射方法和不连续多层交替沉积工艺,制备了CoFeB/MgO系列纳米不连续多层薄膜,研究了微波频段下的电磁性能.结果表明,通过调整CoFeB合金相和MgO介质相的相对含量可有效调控薄膜的微结构和电磁性能,且在［Co₆₄Fe₂₄B₁₂(0.7nm)/MgO(0.4nm)］₄₀薄膜中获得了优良的微波软磁性能和高电阻率,其饱和磁化强度1.3 T,难轴矫顽力130 A/m,电阻率3.4mΩ·cm,且共振频率高达2.1 GHz,磁导率实部μ′和虚部μ″在1.59 GHz处均高于240,并且在0.9—2 GHz宽频带范围同时大于100.该薄膜可用于微波吸收材料和电磁兼容的设计中. 关键词： 纳米磁性颗粒膜 磁导率频谱 电磁性能 吸波材料