Exchange bias studies of NiFe/FeMn/NiFe trilayer by ion beam etching

Effect of low energy ion beam etching on exchange bias in NiFe/FeMn/NiFe trilayer is investigated in multilayers prepared by rf magnetron sputtering. Stepwise etching and magnetization measurement of FeMn layer in an NiFe/FeMn bilayer show increase of bias as etching proceeds and FeMn thickness decreases. The bias show a maximum around 7 nm FeMn thickness and then fall sharply below 5 nm, broadly in line with the exchange bias variation at increasing FeMn thickness but in reverse order, particularly at low FeMn thickness. Progressive etching of top NiFe layer in the NiFe/FeMn/NiFe trilayer shows an initial gradual increase in bias followed by a sharp increase below 7 nm thickness of top NiFe layer, with a maximum at 2 nm thickness for both NiFe layers and greater bias for seed NiFe layer.     

几种元素的界面插层对Ta/NiFe/Ta的各向异性磁电阻效应的影响

文章中,通过磁控溅射制备了界面处插入4d,5d元素薄层(包括Ru,Pd,Ag和Au)的Ta/NiFe/Ta多层膜,并对它们的磁输运和磁性以及微结构进行了测试和表征.结果显示,Pd和Pt一样界面效应显著,能有效地提高NiFe薄膜退火前后的AMR比值,并抑制磁性死层.表面能比较小、熔点相对低的插层材料Ag,Au在退火过程中容易通过晶界扩散,强烈破坏其AMR性能.对于熔点高、表面能比较大的插层材料如Ru,磁性死层同样得到了抑制,NiFe薄膜的温度稳定性也可以得到提高.结果表明界面插层从界面电子自旋-轨道散射、界面死层和界面原子扩散等方面深刻影响NiFe薄膜的AMR. 关键词： 各向异性磁电阻 界面效应 原子扩散     

磁控溅射制备本征ZnO/Ag/ZnO透明导电薄膜的性质研究

室温下采用射频磁控溅射氧化锌（ZnO）粉末靶、银（Ag）靶,在玻璃衬底上制备ZnO/Ag/ZnO透明导电薄膜。首先,ZnO厚度为30 nm时,改变Ag厚度制备3层透明导电薄膜,研究Ag层厚度及膜层间配比对光电性能的影响;其次,按ZnO∶Ag厚度比为30∶11比例制备不同厚度的3层透明导电薄膜,研究多层厚度对薄膜光电性能的影响。结果表明：Ag厚度为8 nm及11 nm的ZnO/Ag/ZnO表面相对平整,结晶程度较好,在可见光范围内最高透过率达到90%及86%,并且方块电阻为6 Ω/□及3.20 Ω/□,具有优良的光电性;当按配比制备ZnO/Ag/ZnO 3层膜时,增加ZnO厚度对Ag层的增透作用反而减弱,同时增加Ag层厚度也会降低3层薄膜的整体光学性。     

Prerequisites for high-quality magnetic tunnel junctions: XPS and NMR study of Co/Al bilayers

Aluminum films with thicknesses ranging from 1 nm to 12 nm have been sputtered on 20 nm thick Co layers. The properties of the Co/Al bilayers were studied by X-ray photoemission spectroscopy (XPS) and spin-echo nuclear magnetic resonance (NMR). Both methods show independently that a 1 nm Al film covers the Co surface completely. XPS and NMR also showed that layers thicker than 1 nm Al are not oxidized completely in ambient air. Similarities to and deviations from niobium with Al overlayers (Nb/Al) are described. Prerequisites for the fabrication of tunneling magnetoresistance devices based on Co or NiFe ferromagnets and an aluminum oxide barrier are discussed. Received: 7 July 1999 / Accepted: 11 November 1999 / Published online: 8 March 2000     

Pseudo spin-valves with Al or Nb as spacer layer: GMR and search for spin switch behaviour

The magnetoresistance of several Ferromagnet/Normal metal/Ferromagnet spin-valve type structures has been investigated using Al as normal spacer layer. A magnetoresistance ratio up to 4.1% at room temperature and 5.7% at 0.3 K is found for the sandwich with both Co layers, while slightly lower signals are found for the structures involving CoFe and NiFe layers. The magnetoresistance dependence for Co/Al/Co, Co/Al/CoFe and Co/Al/NiFe on the spacer layer thickness exhibits the familiar non monotonic behaviour with second peak slightly larger than the one reported for Cu based pseudo spin valves. At cryogenic temperatures, preliminary results on the onset of spin switch effects in Co/Al/Co and the full spin switch effect in Co/Nb/Co are also reported here.     

Magnetoresistance in epitaxial [NiFe/Cu/Co(/Cu)] films

Epitaxial [NiFe/Cu/Co(/Cu)] films have been grown on Si(100)/Cu substrates using an ultrahigh vacuum evaporation method. Magnetoresistance (MR) and magnetization were measured at room temperature with maximum applied field, 40 kA/m. The (100) oriented [NiFe(3 nm)/Cu(6 nm)/Co(3 nm)/Cu(6 nm)] × 10 multilayers showed a sharply peaked MR curve (when the external field was applied along [011] direction) due to magnetization rotation of free NiFe layers separated from Co layers with thick Cu layers. Furthermore the interposition of a Ag layer in the Cu layer reduced the couplings between ferromagnetic layers and improved the sensitivity of the [NiFe/Cu/Co(/Cu)] film. Si(100)/Cu(5 nm)/[Co(3 nm)/Cu(2.4 nm)/Ag(0.2 nm)/Cu(2.4 nm)/NiFe(3 nm)/Cu(2.4 nm)/Ag(0.2 nm)/Cu(2.4 nm)] × 10 multilayers showed a resistivity change of about 8.2% per kA/m (12 Oe).     

Thermal stability and separation characteristics of anti-sticking layers of Pt/Cr films for the hot slumping technique

The thermal stability and separation characteristics of anti-sticking layers of Pt/Cr films are studied in this paper. Several types of adhesion layers were investigated: 10.0 nm Pt, 1.5 nm Cr + 50.0 nm Pt, 2.5 nm Cr+ 50.0 nm Pt and 3.5 nm Cr + 50.0 nm Pt fabricated using direct current magnetron sputtering. The variation of layer thickness, roughness, crystallization and surface topography of Pt/Cr films were analyzed by grazing incidence X-ray reflectometry, large angle X-ray diffraction and optical profiler before and after heating. 2.5 nm Cr + 50.0 nm Pt film exhibits the best thermal stability and separation characteristics according to the heating and hot slumping experiments. The film was also applied as an anti-sticking layer to optimize the maximum temperature of the hot slumping technique.     

Quantitative TEM analysis of Al/Cu multilayer systems prepared by pulsed laser deposition

Thin films composed of alternating Al/Cu/Al layers were deposited on a (111) Si substrate using pulsed laser deposition (PLD). The thicknesses of the film and the individual layers, and the detailed internal structure within the layers were characterized by means of transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and energy-filtered TEM (EFTEM). Each Al or Cu layer consists of a single layer of nano-sized grains of different orientations. EFTEM results revealed a layer of oxide about 2 nm thick on the surface of the Si substrate, which is considered to be the reason for the formation of the first layer of nano-sized Al grains. The results demonstrate that the PLD technique is a powerful tool to produce nano-scale multilayered metal films with controllable thickness and grain sizes.     

Structural and magnetic studies of Co thin films

The trend in reducing device dimension induces new physical properties and requires the development of measurement tools at the nanometer scale. This paper deals with the relation between magnetism and structure of thin films. We have chosen cobalt as a ferromagnetic layer and chromium as a bcc buffer. Magnetic and structural investigations have been led on epitaxial Co/Cr layers grown on MgO (001) substrates. The thickness of the cobalt layer varies from 0.75 to 20 nm. Investigations on the cobalt layer by EXAFS and HRTEM give evidence for a bcc or a hcp structure depending on the cobalt thickness. Magnetic measurements using SQUID indicate that the saturation magnetisation per volume unit is constant for the layers. EELS experiments have been carried out to measure any evolution in the I(L3)/I(L2) ratio for ferromagnetic layers of different thickness. We discuss the influence of structural and magnetic contributions on the evolution of the ratio with the cobalt thickness.     

Optical description of HfO2/Al/HfO2 multilayer thin film devices

A three-layer system of dielectric/metal/dielectric (D/M/D) has been prepared on Marienfeld commercial glass substrates with Metal = Al, and Dielectric = HfO₂ for energy efficient windows applications. Subsequently, HfO₂/Al/HfO₂ multilayers have been deposited with 10 nm each HfO₂ layer and 5 nm thick Al layer using electron beam evaporation. The microstructural characteristics of D/M/D thin films have been investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). Present results indicate the formation of HfO₂ weak polycrystals embedded in the disordered lattice. AFM data reveals quite a smooth surface involving a structure of slightly elongated grains with almost Gaussian size distribution with mean grain size in the range from 7 to 23 nm. Regarding optical properties, maximum transmittance of the D/M/D structure is noticed to occur in the UV-region, whereas reflectance rises to ∼60% in the visible to near infrared (NIR)-regions. To optimize the performance of these D/M/D devices, computer calculations have been performed by varying either the thickness of both HfO₂ layers and/or thickness of metallic Al layer. A satisfactory agreement between theoretical and experimental spectra is noticed. Such D/M/D structures can be useful in heat mirror applications involving energy efficient windows etc.     

Thermomagnetic recording properties of novel bismuth-substituted garnet films

The effects of various reflecting layers on the magneto-optical recoding properties of BiGaYIG films are reported. The thickness and composition of the reflecting layer are important for thermomagnetic recording quality. A static tester was build to write domains at various temperatures and fields. In the samples tested, the written domains were regular, reproducible and stable in the presence of magnetic stray fields. Films with thicker Al+Cr and Al-doped Cr reflectors were found to be easier to write domains.     

Angular and NiFe thickness dependence of exchange bias in IrMn/NiFe/IrMn thin film

Exchange biased IrMn/NiFe/IrMn thin films were studied as a function of NiFe thickness. In plane angular dependence of a resonance field distribution which is measured by FMR was analyzed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. The unidirectional anisotropic field and the uniaxial anisotropic field were linearly varied with NiFe thickness while the films with a thicker NiFe layer do not follow the linear variation. Resonance field and linewidth variations were also analysed with NiFe thickness.     

Deformation mechanisms of ultra-thin Al layers in Al/SiC nanolaminates as a function of thickness and temperature

The mechanical properties of Al/SiC nanolaminates with layer thicknesses between 10 and 100 nm were studied by nanoindentation in the temperature range 25 to 100 °C. The strength of the Al layers as a function of the layer thickness and temperature was obtained from the hardness of the nanolaminates by an inverse methodology based on the numerical simulation of the nanoindentation tests by means of the finite element method. The room temperature yield stress of the Al layers showed a large ‘the thinner, the stronger’ effect, which depended not only on the layer thickness but also on the microstructure, which changed with the Al layer thickness. The yield stress of the Al layers at ambient temperature was compatible with a deformation mechanism controlled by the interaction of dislocations with grain boundaries for the thicker layers (>50 nm), while confined layer slip appeared to be dominant for layers below 50 nm. There was a dramatic reduction in the Al yield stress with temperature, which increased as the Al layer thickness decreased, and led to an inverse size effect at 100 °C. This behavior was compatible with plastic deformation mechanisms controlled by grain boundary and interface diffusion at 100 °C, which limit the strength of the ultra-thin Al layers.     

Epitaxial growth of Al on Si(1 1 1) with Cu buffer layers

The structure of thin Al films grown on Si(1 1 1) with thin Cu buffer layers has been investigated using synchrotron radiation photoemission spectroscopy. A thin Cu(1 1 1) layer between the Si(1 1 1) substrate and an Al film may enhance quantum well effects in the Al film significantly. The strength of quantum well effects has been investigated qualitatively with respect to the thickness of the Cu buffer layer and to the Al film thickness. Deposition of Cu on Si(1 1 1)7 × 7 leads to formation of a disordered silicide layer in an initial regime before a well-ordered Cu(1 1 1) film is formed after deposition of the equivalent of 6 layers of Cu. In the regime below 6 layers of Cu the disorder is transferred to Al layers subsequently grown on top. The initial growth of up to 8 layers of Al on a well-ordered Si/Cu(1 1 1) layer leads to a disordered film due to the lattice mismatch between the two metals. When the Cu buffer layer and the Al over-layer are above 6 and 8 layers, respectively the Al film shows sharp low energy electron diffraction patterns and very sharp quantum well peaks in the valence band spectra signalling good epitaxial growth.     

Thickness‐dependent structural characteristics for a sputtering‐deposited chromium monolayer and Cr/C and Cr/Sc multilayers

The interior structure, morphology and ligand surrounding of a sputtering‐deposited chromium monolayer and Cr/C and Cr/Sc multilayers are determined by various hard X‐ray techniques in order to reveal the growth characteristics of Cr‐based thin films. A Cr monolayer presents a three‐stage growth mode with sudden changes occurring at a layer thickness of ～2 nm and beyond 6 nm. Cr‐based multilayers are proven to have denser structures due to interfacial diffusion and layer growth mode. Cr/C and Cr/Sc multilayers have different interfacial widths resulting from asymmetry, degree of crystallinity and thermal stability. Cr/Sc multilayers present similar ligand surroundings to Cr foil, whereas Cr/C multilayers are similar to Cr monolayers. The aim of this study is to help understand the structural evolution regulation versus layer thickness and to improve the deposition technology of Cr‐based thin films, in particular for obtaining stable Cr‐based multilayers with ultra‐short periods.     

Magnetoresistance and magnetization studies through a Cu interlayer in spin valves of NiFe/Cu/NiFe/FeMn

The influence of the Cu layer thickness on the magnetic and magnetotransport properties has been investigated in Ta/NiFe/Cu/NiFe/FeMn spin valves. The magnetization and magnetoresistance measurements were carried out for magnetic field applied along the easy-axis direction. A phenomenological model, which assumes formation of a planar domain wall at the anti-ferromagnetic side of the interfaces as well as bilinear coupling between the ferromagnetic layers, was used to derive the anisotropy characteristics and orientation of each NiFe layer magnetization. The anisotropy and spin valve magnetoresistance were simulated numerically and compared with the experiment. It was found that the anisotropy magnetoresistance is negligible and that there is a poor agreement for the spin-valve one, which was attributed to the model (valid for ferromagnetic layers in single-domain state only) used for its calculation. It was found that the increase of the Cu layer thickness provokes a decrease of the interdiffusion between the NiFe and FeMn layers, and, as consequence, changes of the uniaxial anisotropy of the pinned NiFe layer, of the exchange interaction between the pinned NiFe layer and the FeMn ones, as well as of the exchange-bias field of the pinned NiFe layer.     

Interlayer magnetic coupling in multilayer magnetic Fe/Cr/Fe systems

The interlayer magnetic coupling of iron layers as a function of the chromium spacer thickness and temperature has been studied for three-layer epitaxial Fe/Cr/Fe films by the methods of Kerr magnetometry and Mandelstam-Brillouin scattering. The results obtained indicate that the short-period component of the interlayer exchange is related to the spin density wave in the chromium spacer.     

Fabrication and performance characterization of Al/Ni multilayer energetic films

Al/Ni multilayer bridge films, which were composed of alternate Al and Ni layers with bilayer thicknesses of 50, 100 and 200 nm, were prepared by RF magnetron sputtering. In each bilayer, the thickness ratio of Al to Ni was maintained at 3:2 to obtain an overall 1:1 atomic composition. The total thickness of Al/Ni multilayer films was 2 μm. XRD measurements show that the compound of AlNi is the final product of the exothermic reactions. DSC curves show that the values of heat release in Al/Ni multilayer films with bilayer thicknesses of 50, 100 and 200 nm are 389.43, 396.69 and 409.92 J?g^?1, respectively. The temperatures of Al/Ni multilayer films were obviously higher than those of Al bridge film and Ni bridge film. Al/Ni multilayer films with modulation of 50 nm had the highest electrical explosion temperature of 7000 K. The exothermic reaction in Al/Ni multilayer films leads to a more intense electric explosion. Al/Ni multilayer bridge films with modulation period of 50 nm explode more rapidly and intensely than other bridge films because decreasing the bilayer thickness results in an increased reaction velocity.     

Production of single-crystal laminated ferro-ferrite films and certain of their magnetic properties

A method is developed for producing single-crystal magnetic laminated films of ferrite-ferromagnetic composition based on chemical transport reactions. Certain magnetic properties of these films are investigated. It is established that the exchange interaction between the ferrite film and the ferromagnetic layer depends essentially on the thickness of the diffusion layer of the latter into the ferrite layer. This leads to almost simultaneous remagnetization of both films. It is postulated that the process of rotation of the magnetic moment in the direction of the external field begins in the ferrite film and passes smoothly first into the diffusion layer and then into the ferromagnetic film. Exchange coupling considerably decreases the coercive force of ferromagnetic layers grown on ferrite films.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 90–94, May, 1974.