Spin-dependent electron dynamics and recombination in GaAs<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>N<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> alloys at room temperature

Conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs_1−x N _x alloys with a small nitrogen content (x = 2.1, 2.7, and 3.4%) is studied both experimentally and theoretically. It is found that the photoluminescence circular polarization determined by the mean spin of free electrons reaches 40–45% and this giant value persists within 2 ns. Simultaneously, the total free-electron spin decays rapidly with the characteristic time ≈ 150 ps. The results are explained by spin-dependent capture of free conduction electrons on deep paramagnetic centers resulting in the dynamical polarization of bound electrons. A nonlinear theory of spin dynamics in the coupled system of spin-polarized free and localized carriers has been developed which describes the experimental dependencies, in particular, the electron spin quantum beats observed in a transverse magnetic field. The text was submitted by the authors in English.     

Electro-optical polarization mode dispersion in PbMg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>O<Subscript>3</Subscript> single crystals

The polarization mode dispersion induced by an external ac electric field in PbMg_1/3Nb_2/3O₃ single crystals is studied experimentally at frequencies of 10⁴–10⁷ Hz. It is established that the discovered electro-optical polarization mode dispersion (EPMD) displays anomalous properties related to the orientation of the induced dipole moments in microregions of the crystal. Analytical expressions describing the peculiarities of the physical properties of relaxors giving rise to the EPMD are obtained.     

Magnetoelectric effects in gadolinium iron borate GdFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript>

Magnetoelectric interactions have been investigated in a single crystal of gadolinium iron borate GdFe₃(BO₃)₄, whose macroscopic symmetry is characterized by the crystal class 32. Using the results of this study, the interplay of magnetic and electric orderings occurring in the system has been experimentally revealed and theoretically substantiated. The electric polarization and magnetostriction of this material that arise in spin-reorientation transitions induced by a magnetic field have been investigated experimentally. For H ‖ c and H ⊥ c, H-T phase diagrams have been constructed, and a strict correlation between the changes in the magnetoelectric and magnetoelastic properties in the observed phase transitions has been ascertained. A mechanism of specific noncollinear antiferroelectric ordering at the structural phase transition point was proposed to interpret the magnetoelectric behavior of the system within the framework of the symmetry approach in the entire temperature range. This ordering provides the conservation of the crystal class of the system when the temperature decreases to the antiferroelectric ordering point. The expressions that have been obtained for the magnetoelectric and magnetoelastic energy describe reasonably well the behavior of gadolinium iron borate observed experimentally.     

Magnetoelectric effect in ytterbium aluminum borate YbAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript>

The anisotropic magnetoelectric properties of an ytterbium aluminum borate YbAl (BO single crystal having noncentrosymmetric crystal structure (space group R32) are studied, including the orientational, field, and temperature dependences of the polarization in magnetic fields up to 5 T in the temperature range of 2–300 K. It has been shown experimentally for the first time that the symmetry of the observed magnetoelectric effects exactly corresponds to the trigonal structure of the crystal and is characterized by two quadratic magnetoelectric constants. The polarization in the basal plane P _{a, b} is a quadratic function of the field at low fields and reaches 250–300 μC/m² in a field of 5 T at a temperature of 2 K, almost an order of magnitude exceeding the previously reported values. A theoretical model based on the spin Hamiltonian of the ground Kramers doublet of Yb³⁺ ions in the crystal field is proposed including magnetoelectric interactions allowed by the symmetry. This model makes it possible to quantitatively describe all observed magnetic and magnetoelectric properties of YbAl₃(BO₃)₄.     

Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> and Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> Topological Insulators

The effect of an ultrathin Pb film deposited on the surface of Bi₂Se₃ and Sb₂Te₃ compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.     

Perfect valley polarization in MoS<Subscript>2</Subscript>

We study perfect valley polarization in a molybdenum disulfide (MoS₂) nanoribbon monolayer using two bands Hamiltonian model and non-equilibrium Green’s function method. The device consists of a one-dimensional quantum wire of MoS₂ monolayer sandwiched between two zigzag MoS₂ nanoribbons such that the sites A and B of the honeycomb lattice are constructed by the molecular orbital of Mo atoms, only. Spin-valley coupling is seen in energy dispersion curve due to the inversion asymmetry and time-reversal symmetry. Although, the time reversal symmetry is broken by applying an external magnetic field, the valley polarization is very small. A valley polarization equal to 46% can be achieved using an exchange field of 0.13 eV. It is shown that a particular spin-valley combination with perfect valley polarization can be selected based on a given set of exchange field and gate voltage as input parameters. Therefore, the valley polarization can be detected by detecting the spin degree of freedom.     

The Optical Gain of a Si-Based Lattice-Matched Si<Subscript>0.15</Subscript>Ge<Subscript>0.621</Subscript>Sn<Subscript>0.229</Subscript>/Si<Subscript>0.637</Subscript>Ge<Subscript>0.018</Subscript>Sn<Subscript>0.345</Subscript> MQW Laser

We study the optical-gain characteristics of a Si-based MQW laser, in which the active region has 20 Si_0.15Ge_0.621Sn_0.229 quantum wells separated by 20 Si_0.637Ge_0.018Sn_0.345 barriers. We reach a maximum optical gain of 2300 cm^?1 with an estimated carrier concentration of 5·10¹⁸ cm^?3, which is equivalent to the transparent current density equal to 0.5 kA/cm². Furthermore, we discuss the optical confinement factor and modal gain. The modal gain depends sensitively on the number of the quantum wells (QWs), and this fact restricts the optical confinement factor. The modal gain of the model we proposed can reach 1500 cm^?1 at the injection current density equal to 3 kA/cm². We hope that our results show the possibility to obtain a Si-based near-infrared laser.     

Entanglement in the linear-chain Heisenberg antiferromagnet Cu(C<Subscript>4</Subscript>H<Subscript>4</Subscript>N<Subscript>2</Subscript>)(NO<Subscript>3</Subscript>)<Subscript>2</Subscript>

Quantum correlations are generally impossible to address directly in bulk systems. Quantum measures extended only to a few number of parties can be discussed in practice. In the present work we study a cluster of spins belonging to a compound whose structure is that of a quantum magnet. We reproduce at a much smaller scale the experimental outcomes and then we study the role of quantum correlations there. A macroscopic entanglement witness has been introduced in order to reveal quantum correlations at nonzero temperatures. The critical point beyond which entanglement is zero is found at T _c = 15 K.     

Phase transition in Bi<Subscript>8</Subscript>Fe<Subscript>6</Subscript>Ti<Subscript>3</Subscript>O<Subscript>27</Subscript> multiferroic ceramics

The polycrystalline Bi₈Fe₆Ti₃O₂₇ compound was prepared by a high-temperature solid-state reaction technique. Preliminary structural analysis by X-ray diffraction (XRD) confirms the formation of a single-phase compound in an orthorhombic crystal system at room temperature. The elemental content of the compound was analyzed by EDAX microanalysis. Microstructural analysis by scanning electron microscopy (SEM) shows that the compound has well defined grains, which are distributed uniformly throughout the surface of the pellet sample. Detailed studies of temperature-dependent dielectric response at various frequencies show dielectric anomalies at 380, 389 and 403°C for 10 kHz, 100 kHz, and 1 MHz respectively. The hysteresis loop observed by applying an electric field of 12 kV/cm on the poled sample with smaller remanent polarization supports the existence of ferroelectricity in this material. The value of d₃₃ of the compound was found to be 19 pC/N.      

Retardation of polarization in mixed K<Subscript>0.88</Subscript>(NH<Subscript>4</Subscript>)<Subscript>0.12</Subscript>H<Subscript>2</Subscript>PO<Subscript>4</Subscript> crystal

The time dependences of polarization of K_0.88(NH₄)_0.12H₂PO₄ mixed crystal have been studied within the temperature range of 74–100 K. Two mechanisms of polarization relaxation were found. The first mechanism is caused by domain walls lateral motion and their interaction with point lattice defects. The second one supposedly is due to polar regions infiltration through the regions of frustrated paraelectric phase.     

Excitons and Biexcitons in Spheroidal Quantum Dots A<Subscript>2</Subscript>B<Subscript>6</Subscript>

In the limit of strong quantum confinement the lower energy states of excitons and biexcitons in spheroidal quantum dots of semiconductors with a fourfold degenerate vertex of the valence band, which are active in the dipole approximation at one- and two-photon excitation, have been considered. The comparative analysis of the order of energy levels of the hole in the potentials of the infinitely deep quantum well and a three-dimensional harmonic oscillator taking into account the axial anisotropy of the quantum dot (QD) shape is carried out. It is shown that the anisotropy of the QD shape can lead to the opposite sign of splitting with respect to angular momentum projection ±3/2, ±1/2 for spatially odd (1P_3/2) and even (1S_3/2) levels of the hole. At the same time, in the case of the potential of an infinitely deep quantum well, an inversion of the order of 1S_3/2 and 1P_3/2 levels can be observed at values of the ratio of the effective masses of the light and heavy holes β = m_lh/m_hh ≈ 0.14. The type of the trial wave functions of the hole for the state 1P_3/2 in the potential of an isotropic three-dimensional harmonic oscillator depending on β is proposed. The dependence of the binding energy of excitons in the considered potentials on β is presented and the possibility of formation of various biexcitonic states is considered.     

Mixed (ionic and hole) conductivity of Tl<Subscript>3</Subscript>VS<Subscript>4</Subscript> crystals

A model of mixed (ionic and hole) conductivity in Tl₃VS₄ crystals at close-to-room temperatures is proposed. The significant fraction of the ionic conductivity component (～70% of the total conductivity) is explained by the nonstoichiometric electrically active thallium vacancies, whose acceptor levels provide p-type conductivity. The characteristic time dependence of the voltage developing across a sample due to its polarization and depolarization is described using the diffusion theory of mixed conductivity previously developed by Yokota. The charge transport phenomena in Tl₃VS₄ are studied experimentally, and the data are processed according to the theoretical model.     

Ferroelectric and dielectric properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> thin films grown on Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> film layer

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi₄Ti₄O₁₅ grown on Bi₄Ti₃O₁₂, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO₂/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P _r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm² at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 10¹⁰ switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi₄Ti₄O₁₅ on Bi₄Ti₃O₁₂ ferroelectric thin films were better than those of the SrBi₄Ti₄O₁₅ grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi₄Ti₄O₁₅ on the c-axis-oriented Bi₄Ti₃O₁₂ layer or on the Pt-coated Si substrate.     

Preparation and electrical properties of Bi<Subscript>3.25</Subscript>Pr<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ferroelectric thin films

Bi_3.25Pr_0.75Ti₃O₁₂ (BPT) ferroelectric thin films have been prepared by chemical solution deposition on platinized Si substrates. Well-crystallized BPT films can be achieved by 600 °C rapid thermal annealing. The film surface is smooth and crack-free, composed of uniform spherical grains around 90–100 nm in diameter. The electrical properties of Pt/BPT/Pt thin film capacitors were characterized by hysteresis and impedance measurements. The remanent polarization of 700 °C annealed BPT films is around 20 C/cm² at 120-kV/cm stimulus field. The dielectric constant is around 380 at 10 kHz, 100-mV amplitude. The remanent polarization of BPT film showed a slight reduction, 10% of its original value, after 2.8×10⁹ cycles, while a 30% reduction of non-volatile polarization was observed. PACS 81.15.-z; 77.55.+f; 77.22.Gm     

Effects of LaNiO<Subscript>3</Subscript> on the structures and properties of SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript> thin films

SrBi₂Ta₂O₉(SBT)/LaNiO₃(LNO)/Si and SBT/Pt/TiO₂/SiO₂/Si multilayers were fabricated by pulsed laser deposition. With Pt top electrodes, the measured remanent polarization (2P_r) of Pt/SBT/LNO/Si and Pt/SBT/Pt/TiO₂/SiO₂/Si capacitors was 6.5 C/cm² and 5.2 C/cm², respectively. Using LNO as both bottom electrodes and buffer layers, enhanced non-c-axis crystalline SBT films were induced, which resulted in a 2P_r greater than that of the Pt/SBT/Pt/TiO₂/SiO₂/Si capacitor. The hysteresis loop of the Pt/SBT/LNO/Si capacitor showed a great external-field-dependent horizontal shift. Using an electron-injection model, this dependence was addressed. The fatigue-free property of the Pt/SBT/LNO/Si capacitor was experimentally established, in that the non-volatile polarization decreased by less than 5% of the initial value after 1.44×10⁹ switching cycles . PACS 77.84.Dy; 68.65.+g     

Quasi-two-dimensional ferroelectricity in KNbO<Subscript>3</Subscript>/KTaO<Subscript>3</Subscript> superlattices

First-principles density functional theory is used to calculate the phonon spectrum in the paraelectric phase, the ground-state structure and polarization distribution in the polar phase, and energies of ferro- and antiferroelectrically ordered phases of free-standing (KNbO₃)₁(KTaO₃) _n ferroelectric superlattices with n = 1–7. It is established that quasi-two-dimensional ferroelectricity with polarization oriented in the layer plane, which weakly interacts with polarization in neighboring layers, appears in potassium niobate layers with a thickness of one unit cell in the superlattices. The possibility of using of such ferroelectric superlattices as a medium for three-dimensional information recording is shown.     

Quasi-one-dimensional quantum spin liquid in the Cu(C<Subscript>4</Subscript>H<Subscript>4</Subscript>N<Subscript>2</Subscript>)(NO<Subscript>3</Subscript>)<Subscript>2</Subscript> insulator

We analyze measurements of the magnetization, differential susceptibility and specific heat of quasi-onedimensional insulator Cu(C₄H₄N₂)(NO₃)₂ (CuPzN) subjected to magnetic fields. We show that the thermodynamic properties are defined by quantum spin liquid formed with spinons, with the magnetic field tuning the insulator CuPzN towards quantum critical point related to fermion condensation quantum phase transition (FCQPT) at which the spinon effective mass diverges kinematically. We show that the FCQPT concept permits to reveal and explain the scaling behavior of thermodynamic characteristics. For the first time, we construct the schematic T–H (temperature-magnetic field) phase diagram of CuPzN that contains Landau–Fermi-liquid, crossover and non-Fermi liquid parts, thus resembling that of heavy-fermion compounds.     

Specific features of magneto-optical spectra of Tb<Subscript>3</Subscript>Ga<Subscript>5</Subscript>O<Subscript>12</Subscript>

The spectra of magnetic circular dichroism in the range of the ⁷ F ₆→⁵ D ₄ absorption band and the spectra of magnetic circular polarization of luminescence in the range of the ⁵ D ₄→⁷ F ₅ band in the terbium-gallium garnet Tb₃Ga₅O₁₂ are studied at a temperature of 80 K. The optical transitions between the Stark sublevels of the ⁷ F ₆, ⁷ F ₅, and ⁵ D ₄ multiplets are identified based on the analysis of the magneto-optical and optical spectra. It is shown that the experimentally determined symmetry and energy of the Stark sublevels of these multiplets confirm the results of numerical calculations of the energy spectrum of the Tb³⁺ rare-earth ion in terbium-gallium garnet.     

Soft X-ray resonant scattering study of single-crystal LaSr<Subscript>2</Subscript>Mn<Subscript>2</Subscript>O<Subscript>7</Subscript>

Soft X-ray resonant scattering studies at the Mn L_{II, III}- and the La M_{IV, V}- edges of single-crystal LaSr₂Mn₂O₇ are reported. At low temperatures, below T_N ≈ 160 K, energy scans with a fixed momentum transfer at the A-type antiferromagnetic (0 0 1) reflection around the Mn L_{II, III}-edges with incident linear σ and π polarizations show strong resonant enhancements. The splitting of the energy spectra around the Mn L_{II, III}-edges may indicate the presence of a mixed valence state, e.g., Mn³⁺/Mn⁴⁺. The relative intensities of the resonance and the clear shoulder-feature as well as the strong incident σ and π polarization dependences strongly indicate its complex electronic origin. Unexpected enhancement of the charge Bragg (0 0 2) reflection at the La M_{IV, V}-edges with σ polarization has been observed up to 300 K, with an anomaly appearing around the orbital-ordering transition temperature, T_OO ≈ 220 K, suggesting a strong coupling (competition) between them.     

Magnetic and electric properties of Eu<Subscript>0.62</Subscript>Bi<Subscript>0.38</Subscript>MnO<Subscript>3</Subscript> and Eu<Subscript>0.53</Subscript>Bi<Subscript>0.32</Subscript>Sr<Subscript>0.15</Subscript>MnO<Subscript>3</Subscript> crystals

Single crystals of Eu_0.62Bi_0.38MnO₃ and Eu_0.53Bi_0.32Sr_0.15MnO₃ solid solutions crystallizing in an orthorhombically distorted perovskite structure were prepared. At temperatures above 120 K, Eu_0.62Bi_0.38MnO₃ exhibits the properties of structural glass while remaining a dielectric at all temperatures. There is no long-range magnetic order in this compound. Eu_0.53Bi_0.32Sr_0.15MnO₃ behaves as a semiconductor above 120 K and exhibits a jump in conductivity at T = 175 K associated with a metal-insulator transition occurring within limited regions of the crystal. In these regions, there appears a ferromagnetic moment (due to double exchange mediated by charge carriers) and local electric polarization.