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凹角结构具有优良的减振降噪特性,可以有效衰减结构振动响应,蜂窝结构具有优良的力学特性并已经较为普遍地被应用到工程之中,因此凹角蜂窝的复合结构引起了学者们的关注。本文通过对内凹蜂窝结构分形设计,构建了一种新型声子晶体模型。基于有限元方法对分形凹角蜂窝结构进行分析,计算能带结构以及振动传输特性,分析结构的负泊松比特性以及结构分形对振动带隙的影响。通过改变壁厚和内凹角度等参数,以及在分形结构顶点处填充钢材,可以更好地对某些频段振动产生抑制。结果表明:分形结构仍具有负泊松比特性,分形结构在二阶结构产生的带隙更宽,壁厚和凹角角度的增加会导致结构振动带隙向高频区域转移,填充钢材会使带隙变宽。 相似文献
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采用压痕断裂力学研究了B4C/TiB2基陶瓷喷嘴(B4C/TiB2/Mo和B4C/TiB2/Al2O3)力学性能对抗冲蚀特性的影响,从力学的角度分析了采用SiC磨料和Al2O3磨料时,B4C/TiB2基陶瓷喷嘴抗冲蚀特性产生显著差异的原因.结果表明,B4C/TiB2基陶瓷喷嘴的体积冲蚀磨损率随lnH和lnKIC增加呈线性降低;ln(Hp/H)=1.1是B4C/TiB2基陶瓷喷嘴软硬颗粒磨损的分界线.当使用SiC作为磨料时冲蚀磨损较为严重,因为ln(Hp/H)>1.1,即SiC对于B4C/TiB2基陶瓷喷嘴的冲蚀磨损为硬颗粒磨损;而Al2O3磨料造成冲蚀磨损较轻,因为ln(Hp/H)<1.1,此时的磨损属于软颗粒磨损. 相似文献
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本实验对采用不同工艺条件(析晶温度、析晶保温时间、釉层厚度)制备出具有晶花形貌的硅酸锌系结晶釉,应用分形理论对其晶花形貌进行了研究.结果发现该结晶釉的晶花形貌具有良好的分形特征,并且分形与制备工艺存在一定关系:随着析晶温度的增加,分形维数值与析晶温度除了在1140 ℃时稍有波动,基本上是成反比例关系,结晶形貌的变化趋势由针状或棒状转化为叶片状或圆盘状;随着析晶保温时间的增加,分形维数值逐渐增大,结晶形貌由针微晶逐渐转化成放射状晶体,尺寸也有明显增大的趋势;随着釉层厚度的增加,结晶产物的分形维数明显减小. 相似文献
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本文报道了直接利用透射电子显微镜中的透射电子束辐射氮硅使之分解,从而可利用TEM在纳米尺度上直接观察到氮化硅分解出的硅蒸气在挥发-凝聚过程中产生的分形生长全过程,为深入研究分形生长这一自然界最普遍的现象了提供了极佳的实验范例。 相似文献
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介绍了硅纳米线在制备技术方面的最新进展,综述了硅纳米线两种不同的生长模式("自上而下"和"自下而上"),以及在两种生长模式下硅纳米线的制备方法,即化学气相沉积、分子束外延、激光烧蚀、氧化物辅助生长、溶液法、电子束光刻、纳米压印光刻和金属辅助化学刻蚀等,并对各种方法的优缺点进行了仔细叙述,总结了硅纳米线的两种典型生长方向(平面和垂直)的研究现状.最后阐述了近年来硅纳米线在电子器件、传感器件和太阳能电池的应用情况,并展望其发展趋势,为科研人员进一步开拓硅纳米线研究提供一定参考. 相似文献
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Y. Zheng E. Shi S. Wang Z. Lu S. Cui L. Wang W. Zhong 《Crystal Research and Technology》2004,39(5):387-395
Stoichiometric lithium niobate single crystals with different Li contents have been grown both by the top‐seeded solution growth (TSSG) method from potassium containing flux and by the double crucible Czochralski (DC Cz) method. Spectroscopic properties (e.g. the UV absorption edge, Raman linewidth) and the Curie temperature measurement have been used for the characterization of the crystal composition. The double crucible Czochralski method is found to be suitable for mass production of stoichiometric LiNbO3 with Li content larger than 49.7 mol% and homogeneity of 0.03 mol%. The domain structures and etching morphologies on negative and positive c‐surface were also investigated by chemical etching method. A new domain structure of three‐fold symmetric sectors were observed in near‐stoichiometric LiNbO3 grown by TSSG method. The straight line arrangement hillocks on negative c‐surface and the net‐like arrangement etch lines were observed and explained by stress etching mechanism. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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An attempt has been made to study the etch pit dislocations of isolated as well as matched pairs of cleavage planes of solution grown NaSbF4 and Na3Sb4F15 single crystals when etched with analar grade methyl alcohol and ethyl alcohol. On etching of cleavage faces the pits nucleate at the intersection sites of dislocations with the cleavage face. On successive etching of a cleavage face, arrays of triangular shape etch pits are observed. After prolonged etching some of the etch pits disappear. These pits are curved and terminated indicating that they are crystallographically non-oriented. One-to-one correspondence with respect to number, shape, position and structure of the pits has been established by etching of a matched cleavage face. The etch pit densities of both NaSbF4 and Na3Sb4F15 crystals are found to be 103 per cm2. 相似文献
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Etching of {111} cleavage faces of CaF2 crystals in aqueous solution of 50% HCl is carried out in citric acid set silica gel, and the kinetics of growth of etch pits at the sites of dislocations is investigated as a function of temperature, time of etching and height of gel column above the crystal surface. It is observed that the transient period required to initiate etch pit at the sites of a dislocation decreases (1) at particular temperature, with a decrease in gel height, and (2) for a particular gel height, with an increase in the temperature of etching. It is also observed that the morphology of dislocation etch pits remains triangular irrespective of the gel height and the temperature of etching. The results are compared with those of solution etching and discussed. 相似文献
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Transport of ionic species in the melt and their partitioning at the solid–liquid interface during growth of lithium niobate was studied under the influence of intrinsic and external electric fields. A Mn-doped lithium niobate (Mn:LiNbO3) single crystal was grown via the micro-pulling-down (μ-PD) method with electric current injection at the interface. Mn ions were accumulated or depleted at the interface, depending on the sign of the injected current. The electric current injection induced an interface electric field as well as a Coulomb force between the interface and Mn ions. The electric field modified the transportation of Mn ions and their partitioning into the crystal, while the Coulomb force led to adsorption or rejection of Mn ions at the interface in addition to Mn concentration change due to the electric field. Effect of the Coulomb force was often observed to be larger on Mn concentration at the interface than that of the induced electric field, and dominated the redistribution of Mn in the solid. It has been experimentally and analytically shown that Mn concentration partitioned into the crystal can be obtained by multiplying Mn concentration at the interface by a field-modified partition coefficient, kE0, instead of the conventional equilibrium partition coefficient, k0. 相似文献
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Etch structures obtained by HF etching on habit and cleaved rhombohedral surfaces of synthetic quartz grown by hydrothermal crystallization technique, indicative of twinning in them are described, illustrated and discussed. The twin traces appear in the form of lines of dis-continuity in [1121] and [1211] directions. Etch pits within the parallelogram-shaped bound areas are oppositely oriented with respect to those on the rhombohedral surface of the main crystal. The form of twinning observed is found to be of parallel lattice type and the surface within and outside the bound areas are coplanar in most of the cases. The rhombohedral faces of the twinned crystals are found to be geometrically related to each other as if one part is derived from the other by a rotation of 180° about [1210] direction. Discontinuation in the crystal lattice along the twin trace is evidenced by obstructions in the normal development of an etch pit. Deep penetration of twin traces and parallelogram-shaped regions, enclosing etch pits of opposite orientation (twinned areas), well within the crystal structure is demonstrated by comparison of etch patterns on matched rhombohedral cleavages and the results on their successive etching. The type of twinning displayed by the crystals is discussed in the light of models suggested. Causes for the generation of twinning in synthetic quartz are explained to lie in the availability of twinned nuclei in the seed plates used for hydrothermal crystallization of quartz. 相似文献
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铌酸锂晶体的内偏置场对铁电应用、电光应用和非线性光学应用等均有直接影响。本工作建立了铌酸锂(LN)晶体内偏置场测试方法,对同成分铌酸锂(CLN)晶体、近化学计量比铌酸锂(nSLN)晶体、掺杂铌酸锂(doped LN)晶体的内偏置场和矫顽场进行测量。结果表明,CLN晶体内偏置场最高(Eint=2.53 kV/mm),nSLN晶体的内偏置场大幅降低,其中富锂熔体法生长和气相输运平衡(vapor transport equilibration, VTE)法结合得到的nSLN晶体的内偏置场最小,与CLN晶体相比降低了约两个数量级;掺杂铌酸锂晶体的内偏置场与CLN晶体相比也普遍降低,其中掺6.5%(摩尔分数)Mg的CLN晶体的内偏置场约为CLN晶体的四分之一,掺7%(摩尔分数)Zn的CLN晶体的内偏置场约为CLN晶体的六分之一。最后对组分和掺杂影响内偏置场的因素进行了简要分析。 相似文献