Mn掺杂ZnO稀磁半导体材料的制备和磁性研究

采用共沉淀方法制备了名义组分为Zn_1-xMn_xO(x=0.001,0.005,0.007,0.01)的Mn掺杂的ZnO基稀磁半导体材料,并研究了在大气气氛下经过不同温度退火后样品的结构和磁性的变化.结果表明：样品在600℃的大气条件下退火后, 仍为单一的六方纤锌矿结构的ZnO颗粒材料;当样品经过800℃退火后,Mn掺杂量为0.007,0.01的样品中除了ZnO纤锌矿结构外还观察到ZnMnO₃第二相的存在.磁性测量表明,大气条件下600℃退火后的样品,呈现出室温铁磁性;而800℃退火后的样品,其室温铁磁性显著减弱,并表现为明显的顺磁性.结合对样品的光致发光谱的分析,认为合成样品的室温铁磁性是由于Mn离子对ZnO中的Zn离子的替代形成的. 关键词： ZnO 掺杂 稀磁半导体 铁磁性     

Mn位W掺杂对La0.3Ca0.7MnO3体系磁结构的影响

通过对La_0.3Ca_0.7Mn_1-xW_xO₃(x=0.00，0.04，0.08，0.12，0.15)多晶样品M-T曲线、M-H曲线及ESR谱的测量，研究了Mn位W掺杂对电荷有序体系La_0.3Ca_0.7MnO₃磁结构的影响.结果表明，当掺杂量为0.00≤x≤0.08时，体系存在电荷有序(CO)相，AFM/CO态共存于相变温度以下，电荷有序温度T_CO随着W掺杂量的增加而增加；x＝0.04时，样品在低温下为FM相与AFM/CO相共存，在CO相建立前、后均有FM从PM中分离出来；当x≥0.12时，CO态融化，在极低温度下存在顺磁-铁磁(PM-FM)相变. 关键词： 磁结构 电荷有序 融化 Mn位掺杂     

多自旋态离子Co替代诱导La2/3Ca1/3MnO3体系的输运反常

利用具有多自旋态的Co离子进行Mn位替代.制备了La2/3Ca1/3Mn1-xCoxO31(0≤x≤0.15)系列样品并研究了体系的结构和输运特性.结果表明,在替代范围内,样品呈现很好的单相结构,各晶格参数随替代量的增大而减小;Co替代导致体系出现电输运反常,具体表现为在居里温度Tc以下电阻-温度曲线的二次金属-绝缘转变(M-I)行为(双峰效应),且随Co替代量的增大,无论是高温峰还是低温峰,其峰值温度均向低温区移动;所不同的是,对Co替代样品而言,随外加磁场增加,高温峰值温度TPH向高温区移动,而低温峰值温度TPL.则保持不变,表现出磁场无关的特征;相应的峰值电阻率对Co替代和外加磁场表现出很强的依赖关系,随Co替代含量的增加,各峰值电阻率增加.而低温峰值电阻对Co替代更为敏感;对照样品磁特性测量结果,证明高温峰对应于未替代体系的M-I转变,低温峰对应的反常变化则与Co3 离子替代Mn4 后在体系中引入氧缺位和高的自旋态相关联.     

Mn位W掺杂对La0.3Ca0.7MnO3体系磁结构的影响

通过对La0.3Ca0.7Mn1-xWxO3(x=0.00,0.04,0.08,0.12,0.15)多晶样品M-T曲线、M-H曲线及ESR谱的测量,研究了Mn位W掺杂对电荷有序体系La0.3Ca0.7MnO3磁结构的影响.结果表明,当掺杂量为0.00≤x≤0.08时,体系存在电荷有序(CO)相,AFM/CO态共存于相变温度以下,电荷有序温度TCO随着W掺杂量的增加而增加;x=0.04时,样品在低温下为FM相与AFM/CO相共存,在CO相建立前、后均有FM从PM中分离出来;当x≥0.12时,CO态融化,在极低温度下存在顺磁-铁磁(PM-FM)相变.     

La4/3(Sr1-xBax)5/3Mn2O7的电输运性质研究

本文主要介绍用溶胶-凝胶法制备的Ba离子掺杂的双层钙钛矿锰基氧化物La4/3(Sr1-xBax)5/3Mn2O7(00.4范围内,低温电阻值随烧结温度增加而减小.出现这种反常行为的结果可能是由于随着Sr逐步被Ba离子取代而引起的失配效应造成结构相分离所致.     

(La1-xCex)2/3Ca1/3MnO3体系的输运性质和反常磁特性研究

本文报告了对Ce掺杂锰氧化物(La1-xCex)2/3Ca1/3MnO3 (x=0～1.0)系列样品的输运特性和反常磁特性的研究结果.实验表明,Ce掺杂对Tc有明显的抑制作用,整体上电阻率随Ce掺杂含量增加而上升,在外加磁场时表现出极大的磁电阻效应.磁化强度随温度变化的曲线出现了两个转变,高温处对应于Mn离子磁矩的铁磁金属转变,低温处的转变则对应于Ce离子磁矩自旋有序排列的形成.表明Ce掺杂引起样品中铁磁双交换作用和反铁磁超交换作用之间的竞争,Ce离子与Mn离子有很强的相互作用.随Ce掺杂含量的增加,铁磁有序转变温度下降,而反铁磁有序转变温度则向高温处移动,铁磁区域明显减小.     

Nb2O5掺杂的氧化锌陶瓷导电特性研究

研究了Nb2O5掺杂的ZnO陶瓷在低温下导电特性,结果表明,低温状态下,随着Nb2O5掺杂量的增加,ZnO电阻率降低,不同温度下烧结的ZnO样品,烧结温度越高,电阻率愈小,同一烧结温度下,不同烧结时间的ZnO样品,随着烧结时间的增加,电阻率愈小.     

CoxTi1-xO2-δ体材中氢退火引起的铁磁性及结构相变

利用固相反应法在700℃-1000℃不同的温度下、空气中烧结Co3O4和TiO2混合物,制备了(Co3O4)x/3(TiO2)1-x(0相似文献   

La0.3Ca0.7Mn1-xWxO3体系电荷有序的建立与融化

用标准的固相反应法制备了La0.3Ca0.7Mn1-xWxO3(0.00≤X≤0.15)多晶样品.通过对样品磁化强度-温度(M-T)曲线、磁化强度-磁场强度(MH)曲线及ESR谱的测量,研究了Mn位W掺杂对La0.3Ca0.7Mn1-xWxO3体系的磁相变的影响.结果表明,随着W掺杂量的增加,体系磁相变发生了复杂的变化过程.当掺杂量为0.00≤X≤0.08时,体系存在电荷有序(CO)相,反铁磁(AFM)/C0态共存于相变温度以下,电荷有序温度(Tco)随着W掺杂量的增加而增加.x≥0.12时,体系电荷有序态逐渐减弱并融化,在极低温度下存在顺磁-铁磁(PM-FM)相变.     

La_(0.4)Ca_(0.6)MnO_3中Mn-位Fe和Cr掺杂对磁性质的影响

研究了Fe和Cr掺杂对La0.4Ca0.6Mn O3中电荷有序反铁磁基态的调控作用.磁性质的测量结果表明,两种离子掺杂均能有效抑制原型样品中的长程电荷有序相,但是Fe离子掺杂样品均具有反铁磁的基态,而Cr掺杂样品中则出现了显著的铁磁性.结合电输运测量结果显示,Cr掺杂引起的铁磁态同时具有金属性,表明其中是电子双交换作用占主导.对比两种掺杂离子的电子结构发现,Cr离子空的e g电子轨道促进了电子双交换作用,而Fe掺杂则只是引入了不同的自旋交换作用,导致自旋无序.     

Pr0.7Ca0.15Ba0.15MnO3 manganite: Electron paramagnetic resonance,conductivity and susceptibility

We present a systematic experimental study of single phase Pr_0.7Ca_0.15Ba_0.15MnO₃ manganites. Ferromagnetic insulating state is observed in wide temperature range between the Curie point and peak resistivity temperature. Two approaches for the analysis of the electron paramagnetic resonance (EPR) line-width (ΔH) were considered in details. The first approach is based on the proportionality between the temperature dependencies of resistivity and inverse ΔH. The second approach is based on the model where ΔH∝1/Tχ_dc (χ_dc is a static magnetic susceptibility). For the studied Pr_0.7Ca_0.15Ba_0.15MnO₃ manganites the resistivity, associated with the grain boundary scattering, follows Mott law; the EPR line-width, suggested to be an intrinsic property, is well described with polaron hopping model.     

XPS and ionic conductivity studies on Li1.3Al0.15Y0.15Ti1.7(PO4)3 ceramics

Li_1.3Al_0.15Y_0.15Ti_1.7(PO₄)₃ compound was synthesized by solid-state reaction, and ceramics were sintered. The surfaces of the ceramics were investigated by scanning electron microscopy and X-ray photoelectron spectroscopy. Li_1.3Al_0.15Y_0.15Ti_1.7(PO₄)₃ samples were tested in solid galvanic cells Ag|O₂+CO₂|Li₂CO₃|Li_1.3Al_0.15Y_0.15Ti_1.7(PO₄)₃|LiMnO₂+Mn₂O₃|O₂|Ag. The electromotive force measurements of this cell indicated that investigated samples are practically pure Li-ion conductors. Impedance spectroscopy studies have been performed in the frequency range 10^?2–3·10⁹ Hz and temperatures from ?57 °C to 334 °C. Three dispersion regions related to Li⁺ ionic transport in bulk, grain boundaries of the ceramics and to polarization of electrodes have been found. Total conductivity changes according to Arrhenius law in the studied temperature range, but an anomalous behavior was observed for the bulk conductivity of the ceramics.     

应力导致InAs/In0.15Ga0.85As量子点结构中 In0.15Ga0.85As阱层的合金分解效应研究

利用固源分子束外延技术,在In0.15Ga0.85As/GaAs量子阱生长了两个InAs/In0.15Ga0.85As量子点(DWELL)样品.通过改变其中一个InAs DWELL样品中的In0.15Ga0.85As阱层的厚度和生长温度,获得了量子点尺寸增大而且尺寸分布更均匀的结果.结合光致发光光谱(PL)和压电调制光谱(PzR)实验结果,发现该样品量子点的光学性质也同时得到了极大的优化.基于有效质量近似的数值计算结果表明:量子点后生长过程中应力导致In0.15Ga0.85As阱层合金分解机理是导致量子点尺寸和光学性质得到优化的主要原因.     

Superconductivity in La1.85Sr0.15Cu1-xZnxO4

Based on the multiple exchange-mediated interaction mechanism of high-T_c superconductivity and the Abrikosov-Gorfiov theory of magnetic impurity superconductors, this letter quantitatively explains the Zn-substitution experiment of La_1.85Sr_0.15Cu_1-xZn_xO₄     

Band offsets in In0.15Ga0.85As/ GaAs and In0.15Ga0.85As/Al0.15Ga0.85As studied by photoluminescence and cathodoluminescence

Photoluminescence and cathodoluminescence measurements of strained undoped In_0.15Ga_0.85As/GaAs and In_0.15Ga_0.85As/Al_0.15Ga_0.85As quantum well structures with emission lines attributed to the first electron–first heavy hole and first electron–first light hole excitonic transitions have been analysed theoretically within the eight-band effective mass approximation. For In_0.15Ga_0.85As/GaAs the results are consistent with either type I or type II alignment of the light hole band. In the case of In_0.15Ga_0.85As/Al_0.15Ga_0.85As our results indicate type II alignment for the light hole band and offset ratio ofQ = 0.83.