Field-domain dynamics in negative-effective-mass terahertz oscillators

We have theoretically studied electric-field-domain dynamics and current self-oscillations in dc-biased negative-effective-mass (NEM) p ⁺ pp ⁺ diodes. The formation and traveling of electric-field domains in the diodes are investigated in detail with a realistic treatment of the scatterings contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon within the balance-equation theory. The interesting patterns of the spatiotemporal electric-field domains are shown as a gray density plot with the applied bias as a controlling parameter. It is found that, the applied bias could largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM p ⁺ pp ⁺ diode with a submicrometer p-base. The NEM p ⁺ pp ⁺ diode may therefore be developed as an electrically tunable THz-frequency oscillator.Received: 18 July 2003, Published online: 23 December 2003PACS: 73.61.Ey III-V semiconductors - 73.50.Fq High-field and nonlinear effects - 85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices) - 85.30.De Semiconductor-device characterization, design, and modeling     

0.15-μm T-gate In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As InP-based HEMT with fmax of 390 GHz

In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors （HEMTs） each with a gate-width of 2×50 μm are designed and fabricated. Their excellent DC and RF characterizations are demonstrated. Their full channel currents and extrinsic maximum transconductance （gm,max） values are measured to be 681 mA/mm and 952 mS/mm, respectively. The off-state gate-to-drain breakdown voltage （BVGD） defined at a gate current of-1 mA/mm is 2.85 V. Additionally, a current-gain cut-off frequency （fT） of 164 GHz and a maximum oscillation frequency （fmax） of 390 GHz are successfully obtained; moreover, the fmax of our device is one of the highest values in the reported 0.15-μm gate-length lattice-matched InP-based HEMTs operating in a millimeter wave frequency range. The high gm,max, BVGD, fmax, and channel current collectively make this device a good candidate for high frequency power applications.     

Current oscillation and chaotic dynamics in superlattices driven by crossed electric and magnetic fields

We have theoretically studied current oscillation and chaotic dynamics in doped GaAsAlAs superlattices driven by crossed electric and magnetic fields. When the superlattice system is driven by a dc voltage, a stationary or dynamic electric-field domain can be obtained. We carefully studied the electric-field-domain dynamics and current self-oscillation which both display different modes with the change of magnetic field. When an ac electric field is also applied to the superlattice, a typical nonlinear dynamic system is constructed with the ac amplitude, ac frequency, and magnetic field as the control parameters. Different nonlinear behaviors show up when we tune the control parameters.     

Ocean internal waves interpreted as oscillation travelling waves in consideration of ocean dissipation

Most studies of the synthetic aperture radar remote sensing of ocean internal waves are based on the solitary wave solutions of the Korteweg-de Vries （KdV） equation, and the dissipative term in the KdV equation is not taken into account. However, the dissipative term is very important, both in the synthetic aperture radar images and in ocean models. In this paper, the traveling-wave structure to characterize the ocean internal wave phenomenon is modeled, the results of numerical experiments are advanced, and a theoretical hypothesis of the traveling wave to retrieve the ocean internal wave parameters in the synthetic aperture radar images is introduced.     

The Role of the Hall Field in the Transverse Magnetotransport

The direct measurements show that the Hall field makes no contribution to the electric-field electron heating. The volt-ampere characteristics of n-InSb are measured at T = 4.2 K and the quantizing magnetic field up to 7.4 T for E _y = 0 and E _y 0. A significant effect of the Hall-contact shorting on the magnetoresistance oscillation curve is revealed.     

Effect of electric-field on spin transport and spin current in an organic semiconductor system

We use the two-component drift-diffusion model to study the spin density polarization in an organic semiconductor system under an external electric-field. The spin-dependent electrical-conductivity, the drift spin current and the diffusion spin current in the organic semiconductor are self-consistently derived. It is found that the spin current could be strongly influenced by the spin-dependent electrical-conductivity. When the spin-dependent conductivity varies from 0 to 0.5%, the spin current presents a very pronounced change almost three orders in magnitude. The electric-field could effectively enhance the spin-dependent electrical-conductivity and the spin current. Furthermore, the spin-dependent electrical-conductivity is position sensitive, but its position sensitivity goes down while electric-field is larger than about 1 mV/μm.     

Measurement of the (199)Hg+ 5d9 6s2 (2)D(5/2) electric quadrupole moment and a constraint on the quadrupole shift

The electric-quadrupole moment of the (199)Hg+ 5d9 6s2 (2)D(5/2) state is measured to be theta(D,5/2) = -2.29(8) x 10(-40) C m2. This value was determined by measuring the frequency of the (199)Hg+ 5d10 6s (2)S(1/2) --> 5d9 6s2 (2)D(5/2) optical clock transition for different applied electric-field gradients. An isolated, mechanically stable optical cavity provides a frequency reference for the measurement. We compare the results with theoretical calculations and discuss the implications for the accuracy of an atomic clock based upon this transition. We now expect that the frequency shift caused by the interaction of the quadrupole moment with stray electric-field gradients will not limit the accuracy of the Hg+ optical clock at the 10(-18) level.     

Model for Influences of Magnetic Fields on Intracellular Calcium Oscillations

Based on the model of the two calcium stores developed by Goldbeter, the influence of external magnetic field on the calcium concentration has been discussed. We believe that the cell membrane is a major site of interaction for extremely-low-frequency （ELF） electromagnetic fields, and the permeability of ions can be changed with the changing electromagnetic fields. It is shown that magnetic field initiates intraeellular calcium oscillation with a threshold in flux density, and that the calcium oscillations do not occur if the density of magnetic field is below the threshold. The results of theoretical calculation are consistent with that of the experiment. The intracellular free calcium concentrations of different cells exposed to the same magnetic fields are different from each other. It is indicated that the different behaviors such as oscillation, rise and invariability of calcium concentration are associated with the sort of cells.     

Electromagnetic Bloch oscillation in one-dimensional multiple microcavities composed of metamaterials

We propose a photonic structure stacked sequentially by one-dimensional photonic crystals and cavities. The whole structure is composed of single-negative and double-negative materials. The optical Wannier-Stark ladder （WSL） can be obtained in a low frequency region by modulating the widths of the cavities in order. We simulate the dynamical behavior of the electromagnetic wave passing through the proposed photonic structure. Due to the dispersive characteristics of the metamaterials, a very narrow WSL can be obtained. The long-period electromagnetic Bloch oscillation is demonstrated theoretically to have a period on a microsecond time scale.     

Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices

The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation.     

Noise-induced synchronous stochastic oscillations small scale cultured heart-cell networks

This paper reports that the synchronous integer multiple oscillations of heart-cell networks or clusters are observed in the biology experiment. The behaviour of the integer multiple rhythm is a transition between super- and sub- threshold oscillations, the stochastic mechanism of the transition is identified. The similar synchronized oscillations are theoretically reproduced in the stochastic network composed of heterogeneous cells whose behaviours are chosen as excitable or oscillatory states near a Hopf bifurcation point. The parameter regions of coupling strength and noise density that the complex oscillatory rhythms can be simulated are identified. The results show that the rhythm results from a simple stochastic alternating process between super- and sub-threshold oscillations. Studies on single heart cells forming these clusters reveal excitable or oscillatory state nearby a Hopf bifurcation point underpinning the stochastic alternation. In discussion, the results are related to some abnormal heartbeat rhythms such as the sinus arrest.     

Quantum Effects of Many Atoms in Spinor Bose-Einstein Condensates

We have studied the evolutions of the population transfer, tunnelling current and antibunching effects between spin-（＋1） and spin-（-1） in the case of the strong laser pulses. It is found that the population transfer and tunnelling current exhibit periodical oscillation. For the same Rabi frequency, the larger the atom number, the longer the oscillation period is. For the spin-（-1） component, when the atomic numbers are N=4 and 10, the antibunching effect can appear. For different atomic numbers, the appearing regions are very different. For spin component ＋1, the antibunching effect can always appear for different atomic numbers.     

基于VLES模型的振动圆柱数值模拟

本文将一种VLES(Very Large Eddy Simulation)模型引入到动网格数值计算中,并验证了VLES模型用于模拟类似振动圆柱绕流的动边界问题的有效性.数值求解了不同振幅和频率下非稳态振动圆柱绕流问题.研究表明:随着振幅和激励频率的增加,绕圆柱流动涡脱离形式从2S模式转换到2P0模式,再到P+S模式.在...     

酪氨酸-溴酸钾-硫酸-丙酮在三邻菲啰啉合铁(Ⅱ)催化下的B-Z振荡反应

研究了酪氨酸 溴酸钾 硫酸 丙酮在三邻菲啉合铁 (Ⅱ )催化下的化学振荡反应 ,对振荡的影响因素进行了研究和讨论 .运用正交实验法确立了振荡反应进行的浓度范围 ,得到一个 4 0多次振荡寿命为 6 0min的振荡波 .获得振荡的诱导期和周期与反应物浓度之间的变化趋势曲线 ,以及振荡反应在诱导期和振荡期的表观活化能分别为Ein=4 9.0kJ/mol和E =5 7.0kJ/mol.根据反应过程中的现象和实验数据 ,建立了振荡反应的模型和反应机理 ,确定 [Br-]是振荡反应自发进行的关键因素 .     

Suppression of laser noise in CW 337μm HCN lasers

In a d.c.-discharge-excited 337 μm HCN laser, amplitude laser noise has been observed at the frequency range of 30 kHz to 1 MHz. The laser noise is classified into three types; oscillation noise having sharp peaks, broadly distributed noise having a center frequency and 1/f-noise. Characteristics of the laser noise have been studied experimentally. The laser noise is caused by small oscillation which appears on d.c.-discharge current and by random fluctuations of current and plasma density. The laser noise has been suppressed more than 30 dB by adjusting the laser parameters such as discharge current, pressure and flow rates of mixed gas (CH4₄ + N₂ + He) and added He.     

CP violation and neutrino oscillations

We review the basic mechanisms of neutrino mass generation and the corresponding structure of the lepton mixing matrix. We summarize the status of three-neutrino oscillation parameters as determined from current observations, using state-of-the-art solar and atmospheric neutrino fluxes, as well as latest experimental data as of September 2007. We also comment on recent attempts to account for these results and to understand flavour from first principles. We discuss extensively the prospects of probing the strength of CP violation in two near term accelerator neutrino oscillation experiments, T2K and , as well as possible extensions such as T2KK and a second large off-axis detector near the detector. We also briefly discuss the possibility of probing the effect of Majorana phases in future neutrinoless double beta decay searches and discuss other implications of leptonic CP violation such as leptogenesis. Finally we comment on the issue of robustness of the current oscillation interpretation and possible ways of probing for non-standard neutrino interactions in precision oscillation studies.     

Muon与Tau中微子的运动学有效质量及其不可探测性

利用最新的WMAP观测数据推导出电子、Muon和Tau中微子的运动学有效质量的一般上限:e2+μ2+τ2=m12+m22+m32<0.5eV2,或α<0.71eV(其中α=e,μ,τ)。考虑现有中微子振荡的实验数据,进一步得到e<0.24eV以及μ≈τ<0.24eV. 因此有效质量_μ和_τ太小而无法被探测.     

Application of Donkin’s formula in the theory of energy analyzers: Part II

Studies of conic-type electric-field structures are continued. The electric field is investigated, and its potential is described by the following analytical expression. $\Phi (x,y,z) = \frac{x}{{z + \sqrt {x^2 + y^2 + z^2 } }}$ . Expression (1) is derived on the basis of Donkin’s formula. Properties of these electric fields are described in Part I [1].     

Dynamic dc voltage band in vertical transport of superlattices

By the numerical method, we show a transition process from static to dynamic electric-field domain formation in semiconductor superlattices. During this transition, there can be noticed a sawtooth-like zone in which static and dynamic electric-field domain zones appear alternatively with increasing voltage. Therefore, a dynamic dc voltage band emerges from each sawtooth-like branch of the current－voltage characteristic. These results are qualitatively in agreement with experiment.     

多铁异质结构中逆磁电耦合效应的研究进展

电场调控磁性能够有效降低功耗,在未来低功耗多功能器件等方面具有巨大的潜在应用前景.铁磁/铁电多铁异质结构是实现电场调控磁性的有效途径,其中室温、磁电耦合效应大的应变媒介磁电耦合是最为活跃的研究领域之一.本文简要介绍在以Pb(Mg_(1/3)Nb_(2/3))_(0.7)Ti_(0.3)O_3为铁电材料的多铁异质结构中通过应变媒介磁电耦合效应对磁性、磁化翻转及磁性隧道结调控的研究进展.首先讨论了多铁异质结构中电场对磁性的调控;之后介绍了电场调控磁化翻转的研究进展及理论上实现的途径;然后简述了电场对磁性隧道结调控的相关结果;最后在此基础上,对多铁异质结构中电场调控磁性及磁性器件进行了总结和展望.