GGA+U方法研究C-Al掺杂GaN的电子结构和光学性质

本文用密度泛函理论的第一性原理,研究了C单掺、Al单掺、C-Al共掺GaN体系的电子结构及光学性质.通过分析发现,与本征GaN相比,掺杂后体系都发生了晶格畸变,其中C-Al共掺GaN体系,较容易形成且禁带宽度明显减小,形成了P型半导体,显著降低了电子跃迁所需要的能量;另外,该共掺体系的静介电常数最大,极化能力最强,介电虚部的主峰向低能区域偏移,并且吸收光谱在可见光范围内产生了红移现象,这都体现了C-Al共掺可以拓展GaN体系对可见光的响应范围.因此,C-Al共掺将有望提高GaN体系的光催化性能.     

First-principles study of the influences of oxygen defects upon the electronic properties of Nb-doped TiO_2 by GGA + U methods

The influence of oxygen defects upon the electronic properties of Nb-doped TiO2has been studied by using the general gradient approximation(GGA)+U method. Four independent models(i.e., an undoped anatase cell, an anatase cell with a Nb dopant at Ti site(NbTi), an anatase cell with a Nb-dopant and an oxygen vacancy(NbTi+VO), and an anatase cell with a Nb-dopant and an interstitial oxygen(NbTi+Oi)) were considered. The density of states, effective mass, Bader charge, charge density, and electron localization function were calculated. The results show that in the NbTi+VOcell both eg and t2glevels of Ti 3d orbits make contributions to the electronic conductivity, and the oxygen vacancies(VO) collaborate with Nb-dopants to favor the high electrical conductivity by inducing the Nb-dopants to release more excess charges. In NbTi+Oi, an unoccupied impurity level appears in the band gap, which served as an acceptor level and suppressed the electronic conductivity. The results qualitatively coincide with experimental results and possibly provide insights into the preparation of TCOs with desirable conductivity.     

Optical properties of anatase and rutile TiO_2 studied by GGA + U

The optical properties of thermally annealed TiO_2 samples depend on their preparation process, and the TiO_2 thin films usually exist in the form of anatase or rutile or a mixture of the two phases. The electronic structures and optical properties of anatase and rutile TiO_2 are calculated by means of a first-principles generalized gradient approximation(GGA) +U approach. By introducing the Coulomb interactions on 3d orbitals of Ti atom(U~d) and 2p orbitals of O atom(U~p), we can reproduce the experimental values of the band gap. The optical properties of anatase and rutile TiO_2 are obtained by means of the GGA+U method, and the results are in good agreement with experiments and other theoretical data. Further, we present the comparison of the electronic structure, birefringence, and anisotropy between the two phases of TiO_2. Finally,the adaptability of the GGA+U approach has been discussed.     

GGA+U方法研究不同浓度镧(La)与氮(N)掺杂纤锌矿ZnO的光学性质

本文运用基于密度泛函理论的GGA+U方法,计算了纯ZnO体系,La、N单掺ZnO体系及Zn_(1-x)La_xO_(0.875)N_(0.125)(x=0.125,0.25,0.375)三个共掺体系的电子结构和光学性质.计算结果表明,共掺体系中随着La浓度的增加,掺杂后体系的禁带宽度变小,电子跃迁所需能量减小,晶格畸变程度增大,有利于阻碍光生空穴和电子对的复合,吸收光谱吸收带边红移程度越来明显,覆盖了整个可见光区域.这些特征非常有利地说明共掺体系随La浓度的增加,其光催化功能和电学性能也在提升.     

First-principles local density approximation （LDA）＋U and generalized gradient approximation （GGA） ＋ U studies of plutonium oxides

The electronic structures and properties of PuO2 and Pu2O3 have been studied according to the first principles by using the all-electron projector-augmented-wave （PAW） method. The local density approximation （LDA）＋U and the generalized gradient approximation （GGA）＋U formalisms have been used to account for the strong on-site Coulomb repulsion among the localized Pu 5f electrons. We discuss how the properties of PuO2 and Pu2O3 are affected by choosing the values of U and exchange-correlation potential. Also, the oxidation reaction of Pu2O3, leading to the formation of PuO2, and its dependence on U and exchange-correlation potential have been studied. Our results show that by choosing an appropriate U it is possible to consistently describe structural, electronic, and thermodynamic properties of PuO2 and Pu2O3, which enable the modelling of the redox process involving Pu-based materials.     

In掺杂ZnO电子结构的第一性原理研究

采用第一性原理平面波超软赝势,计算了纤锌矿ZnO和不同掺杂量下In掺杂ZnO晶体的能带结构、态密度和分波态密度.计算表明,In的掺杂导致ZnO禁带宽度变窄.随着掺杂量的增大,In_xZn_1－xO的导带底和价带顶同时下降,但是导带底比价带顶下降得多,这导致了带隙的变窄.此外,In掺杂使晶胞晶格常数增大,这对带隙的变窄也有一定作用.     

First-principles calculations of structural and electronic properties of Tl_xGa_(1-x)As alloys

The zincblende ternary alloys Tl_xGa_(1-x) As(0 x 1) are studied by numerical analysis based on the plane wave pseudopotential method within the density functional theory and the local density approximation. To model the alloys,16-atom supercells with the 2 × 2 × 2 dimensions are used and the dependency of the lattice parameter, bulk modulus,electronic structure, energy band gap, and optical bowing on the concentration x are analyzed. The results indicate that the ternary Tl_xGa_(1-x) As alloys have an average band gap bowing parameter of 4.48 eV for semiconductor alloys and 2.412 eV for semimetals. It is found that the band gap bowing strongly depends on composition and alloying a small Tl content with GaAs produces important modifications in the band structures of the alloys.     

N掺杂和N-V共掺杂锐钛矿相TiO2的第一性原理研究

采用基于密度泛函理论的投影缀加平面波方法和广义梯度近似加Hubbard参数的似近,研究了锐钛矿相TiO₂,N掺杂TiO₂和N-V共掺杂TiO₂体系的基态原子构型、电子结构.结果表明,N掺杂后,其晶胞体积比末掺杂时要略微增大,基态构型并未发生明显变化,而N-V共掺杂时,对称性被破坏,V原子向N原子附近靠近.计算得到的锐钛矿相TiO₂带隙E_gap为3.256 eV,与实验值3.23 eV非常接近.N掺杂TiO₂带隙降低了0.4 eV,而N-V共掺杂带隙降低至2.555 eV.此外,N-V共掺杂会在价带顶和导带底之间形成受主和施主能级,这种能级对光生电子-空穴对的分离是非常有利的,降低了再次复合的概率.因此,N-V共掺杂TiO₂可以有效地提升TiO₂作为光催化剂的催化能力.     

Pressure-induced spin transitions of iron in MgSiO3 perovskite: a GGA+U study

First-principles calculations using the GGA+U method have been made to investigate the spin transitions of iron in MgSiO₃ perovskite up to 120 GPa, with Fe²⁺ and Fe³⁺ at the A and B sites involving different substitution mechanisms and various charge compensation configurations. Our results, unlike those from previous local density approximation and generalized gradient approximation calculations, are now consistent with available experimental data for the spin states of Fe³⁺ in perovskite. In particular, our calculations show that both Fe²⁺ and Fe³⁺ at the A site do not exhibit any spin transition at the lower mantle conditions. However, Fe³⁺ at the B site in both (Mg_0.9375Al_0.0625)(Si_0.9375Fe_0.0625)O₃ and (Mg_0.9375Fe_0.0625)(Si_0.9375Fe_0.0625)O₃ undergoes a high-spin to low-spin transition at ～ 35 GPa, and this spin-transition pressure is largely independent on substitution mechanisms and charge compensation configurations.     

强关联效应下非磁性元素Ir掺杂的SmFeAsO电子结构理论研究

基于密度泛函理论, 采用广义梯度近似方法 (SGGA+U) 计算分析了SmOFeAs电子结构以及 Ir 掺杂对该体系晶体结构和电子结构的影响. 结果表明, 随着Ir的掺杂, SmOFeAs晶体结构中FeAs层与SmO层之间的耦合增强, 晶体内部所含的铁砷四面体随着Ir掺杂其畸变性程度逐步减小. Fe3d以及As4p杂化轨道对体系电子结构起主要影响作用. Ir掺杂所引入的电子使FeAs层的巡游电子增多、Fe3d轨道中的 d_z2轨道离域性增强. 当Ir掺杂量为20%时, 费米面处于电子态密度峰值附近, 费米面急剧变化使该体系的T_c值有所增高, 反映了体系费米能级移动与其超导电性的密切关联性. 计算的电子态密度与XPS所得价带谱实验结果一致, 进一步验证了采用SGGA+U方法其包含修正d轨道局域电子的库仑势, 使得计算结果与实验结果更加接近. 关键词： U')" href="#">GGA+U SmOFeAs 晶体结构 电子结构     

Photoemission experiments and density functional calculations for the W(1 1 2) stepped surface with submonolayer Au coverages

Photoemission experiments and theoretical calculations for the system Au-stepped W(1 1 2), have been done at submonolayer coverage region ranging from 0.1 to 0.9 monolayers, for different sample orientations relative to the photon polarization, i.e. parallel and perpendicular to the steps direction. Valence-band photoemission spectra of the Au/W(1 1 2) system demonstrate sharp angular dependent features at 4.5 and 0.3 eV binding energies when the photon polarization is parallel to the steps direction. Density functional theory calculations were performed for the Au/W(1 1 2) system with monolayer and half monolayer Au coverages in order to assign the origin of these features.     

Band-gap engineering of La_(1-x)Nd_xAlO_3(x = 0,0.25,0.50,0.75,1)perovskite using density functional theory:A modified Becke Johnson potential study

The structural,electronic,and magnetic properties of the Nd-doped Rare earth aluminate,La_(1-x)Nd_xAlO_3(x = 0%to 100%) alloys are studied using the full potential linearized augmented plane wave(FP-LAPW) method within the density functional theory.The effects of the Nd substitution in La AlO_3 are studied using the supercell calculations.The computed electronic structure with the modified Becke–Johnson(m BJ) potential based approximation indicates that the La_(1-x)Nd_xAlO_3 alloys may possess half-metallic(HM) behaviors when doped with Nd of a finite density of states at the Fermi level(E_F).The direct and indirect band gaps are studied each as a function of x which is the concentration of Nddoped La AlO_3.The calculated magnetic moments in the La_(1-x)Nd_xAlO_3 alloys are found to arise mainly from the Nd-4f state.A probable half-metallic nature is suggested for each of these systems with supportive integral magnetic moments and highly spin-polarized electronic structures in these doped systems at E_F.The observed decrease of the band gap with the increase in the concentration of Nd doping in La AlO_3 is a suitable technique for harnessing useful spintronic and magnetic devices.     

GGA+U的方法研究Ag掺杂浓度对ZnO带隙和吸收光谱的影响

目前, 当Ag掺杂ZnO摩尔数为0.0208-0.0278的范围内, Ag掺杂对ZnO吸收光谱影响的实验研究均有文献报道, 但是, 有两种不同的实验结果, 掺杂体系吸收光谱红移或蓝移两种相悖的报道. 为了解决本问题, 本文采用自旋密度泛函理论(DFT)框架下的广义梯度近似(GGA+U)平面波赝势方法, 构建三种Zn_1-xAg_xO (x=0, x=0.0278, x=0.0417)模型, 分别对所有模型进行几何结构优化和能量计算. 结果表明, 与纯的ZnO布居值和Zn-O的键长相比, 掺杂体系布居值减小、Ag-O键长增加、共价键减弱、离子键增强. 当Ag掺杂ZnO摩尔数为0.0278-0.0417的范围内, Ag掺杂量越增加、O原子2p轨道、Zn原子的4s, 3d轨道电荷数不变、Ag原子的5s轨道电荷数越增加、Ag原子的4d轨道电荷数越减小、掺杂体系晶格常数越增加、体积越增加、总能量越增加、稳定性越下降、形成能越下降、掺杂越难、掺杂体系的带隙越变窄、吸收光谱红移越显著. 计算结果与实验结果相一致. 并且合理解释了存在的问题. 这对设计和制备Ag掺杂ZnO体系的光催化剂有一定的理论指导作用.     

The geometry structures and electronic properties of Li_mB_n(m+n=12) clusters

The geometric structures, electronic properties, total and binding energies, harmonic frequencies, the highest occupied molecular orbital to the lowest unoccupied molecular orbital energy gaps, and the vertical ionization potential energies of small LimBn （m＋ n = 12） clusters were investigated by the density functional theory B3LYP with a 6-31 I＋G （2d, 2p） basis set. All the calculations were performed using the Gaussian09 program. For the study of the LimBn clusters, the global minimum of the B 12 cluster was chosen as the starting point and the boron atoms were gradually replaced by Li atoms. The results showed that as the number of Li atoms increased, the stability of the LimBn cluster decreased and the physical and chemical properties became more active. In addition, on average there was a large charge transfer from the Li atoms to the B atoms.     

Tuning the magnetic and electronic properties of strontium titanate by carbon doping

The magnetic and electronic properties of strontium titanate with different carbon dopant configurations are explored using first-principles calculations with a generalized gradient approximation (GGA) and the GGA+U approach. Our results show that the structural stability, electronic properties and magnetic properties of C-doped SrTiO₃ strongly depend on the distance between carbon dopants. In both GGA and GGA+U calculations, the doping structure is mostly stable with a nonmagnetic feature when the carbon dopants are nearest neighbors, which can be ascribed to the formation of a C–C dimer pair accompanied by stronger C–C and weaker C–Ti hybridizations as the C–C distance becomes smaller. As the C–C distance increases, C-doped SrTiO₃ changes from an n-type nonmagnetic metal to ferromagnetic/antiferromagnetic half-metal and to an antiferromagnetic/ferromagnetic semiconductor in GGA calculations, while it changes from a nonmagnetic semiconductor to ferromagnetic half-metal and to an antiferromagnetic semiconductor using the GGA+U method. Our work demonstrates the possibility of tailoring the magnetic and electronic properties of C-doped SrTiO₃, which might provide some guidance to extend the applications of strontium titanate as a magnetic or optoelectronic material.     

Ag(110)表面吸附酞菁铜分子的紫外光电子谱研究

用紫外光电子能谱(UPS)研究了酞菁铜分子在Ag(110)单晶表面上的吸附，随着酞菁铜分子覆盖度增加，衬底Ag的3d电子信号逐渐减弱，在此能带区域出现两个新的谱峰，这两个与吸附有机分子轨道有关的谱峰的束缚能分别为4.45 和6.36 eV.随着覆盖度的增加，在结合能为1.51和9.20 eV处又出现了两个谱峰，它们同样来自吸附有机分子的轨道.随着覆盖度的继续增加，上述四个谱峰的强度逐渐增加，其能量位置均发生了明显的偏移.根据角分辨光电子能谱的实验结果，酞菁铜分子的分子平面基本与衬底表面平行.密度泛函理论计     

Cr,Cu掺杂Ag电子结构和光学特性的第一性原理研究

基于密度泛函理论的第一性原理平面波超软赝势方法,分别计算了Cr、Cu掺杂Ag晶胞的电子结构和光学特性,计算结果表明,掺杂后Cr、Cu外层电子分别与Ag外层电子发生作用,价带会出现一定展宽;掺杂体系的反射谱和吸收谱在不同波段范围内会发生不同变化,体系的光谱特性发生改变. 研究结果对于光电子器件制备及薄膜界面特性研究具有指导意义.     

Ag(110)表面吸附酞菁铜分子的紫外光电子谱研究

用紫外光电子能谱(UPS)研究了酞菁铜分子在Ag(110)单晶表面上的吸附,随着酞菁铜分子覆盖度增加,衬底Ag的3d电子信号逐渐减弱,在此能带区域出现两个新的谱峰,这两个与吸附有机分子轨道有关的谱峰的束缚能分别为4.45 和6.36 eV.随着覆盖度的增加,在结合能为1.51和9.20 eV处又出现了两个谱峰,它们同样来自吸附有机分子的轨道.随着覆盖度的继续增加,上述四个谱峰的强度逐渐增加,其能量位置均发生了明显的偏移.根据角分辨光电子能谱的实验结果,酞菁铜分子的分子平面基本与衬底表面平行.密度泛函理论计 关键词： 酞菁铜 紫外光电子谱 吸附电子态 密度泛函理论     

Cr,Cu掺杂Ag电子结构和光学特性的第一性原理研究

基于密度泛函理论的第一性原理平面波超软赝势方法,分别计算了Cr、Cu掺杂Ag晶胞的电子结构和光学特性,计算结果表明,掺杂后Cr、Cu外层电子分别与Ag外层电子发生作用,价带会出现一定展宽;掺杂体系的反射谱和吸收谱在不同波段范围内会发生不同变化,体系的光谱特性发生改变.研究结果对于光电子器件制备及薄膜界面特性研究具有指导意义.