大功率LED路灯叉排式散热器的热学特性研究

本文结合有限体积数值模拟建立散热器热学模型,可准确计算散热器系统中温度场以及流体场分布,为有效评价散热器的散热效率提供重要参考依据。基于散热器热学模型．分析比较叉排式以及顺排式散热器的温度场以及流体场分布,发现又排式散热器中交错分布翅片可有效破坏散热器层流底层,增强了流体扰动,加大了换热效果,为优化叉排式散热器结构提供了可靠依据,进而通过分析优化散热器系统送风方向、粘结层材料、散热器材料对总体散热性能以及重量的交叉影响。     

脉冲LED发光强度的时间特性∕光谱特性测试装置

研制了一种可同时快速测试光源发光强度时间特性和发光强度光谱特性的测试装置。并将其应用于脉冲LED光源特性研究。结果表明，利用这种测试装置不但能有效测试闪光时间、光通量、闪光上升时间、闪光下降时间等时间特性参数。而且能有效测试光谱分布、CIE1931色坐标、CIE1960色坐标、相关色温、显色指数等光谱特性参数。为脉冲LED光源研发和生产中的(现场)质量控制提供了一个先进的技术手段。     

高功率开关型脉冲YAG激光电源

叙述了由SG3525A型PWM控制的全桥功率场效应管变换器的主电路：通过这一创新，提高了电源的输出功率、运转精度（达到0.005)、可靠性和使用寿命。通过对启动电路的改进，使电源启动的成功率达到百分之百。介绍了对主电路参数的计算方法和具有独特优点的逻辑控制电路。     

功率型LED弧面阵列系统的热特性研究

为准确计算LED光场以及内部温度场的分布,结合有限体积数值模拟、非成像光学方法建立了单个LED光学以及热学模型,并通过实验测试证实模型的有效性。在此基础上,采用能量叠加原理讨论了LED弧面阵列系统目标平面区域的照度分布,得到了在特定距离的目标平面上均匀的照度分布。通过对复合型散热器系统结构中散热通道内钉柱与翅片的位置尺寸、基板厚度和器件间距的优化设计,增强了热交换效果。     

高功率LED器件的热特性分析

GaN基白光LED不断向高功率、高性能和长寿命方向发展,GaN基白光LED的热性能成为在使用中的重要参数.采用瞬态热测量方式,对工作在不同的温度和驱动电流的GaN基发光二极管的热性能进行了研究.通过比较光、电特性发现LED芯片对器件热阻影响很小,但同时管芯附着层对LED器件的热特性起着非常重要的作用.此外,热电阻随着电流和环境温度的升高而增加,主要归因于管芯附着层声子或粒子的平均自由程减小.     

基于脉冲耦合的超宽带高功率电脉冲源

以固态半导体器件为基础,基于超快电子学中的晶体管雪崩导通理论,利用脉冲耦合原理,在时域上将多路高压皮秒脉冲耦合输出,获得了超宽带高功率脉冲。通过四路脉冲耦合实验验证了该设计思路的可行性,提高了输出脉冲功率。实验中,单路高压皮秒脉冲的幅度为1.33kV,宽度为770ps,峰值抖动≤1%,脉宽抖动≤1%,四路脉冲耦合后,输出脉冲幅度为2.66 kV,宽度为875 ps,峰值抖动≤1%,脉宽抖动≤1%。该方法可以推广至多路脉冲耦合,获得更高的功率。     

功率型LED热特性测试及评价

针对现有热特性测试及评价标准尚不完善的问题,以功率型发光二极管(LED)的精确热特性测试及评价为目标,采用光热一体化测试技术对不同的LED灯珠进行了热特性测试,研究了测试电流对K值标定及结温测试的影响,分析了热特性随环境温度的变化情况,提出了热性能测试及评价的合理建议。研究结果表明:测试电流对K值标定及结温测试有较大影响,测试电流的合理选取与芯片本身及功率的大小有关;材料的热导率随环境温度变化波动,对于某些高温使用环境,仅25℃的热性能参数数据并不能准确反应LED的热特性;热阻测试的准确性与光功率有关,光热一体化测试有利于得到准确的热特性数据。     

基于ADP3806的高功率LED驱动电路设计

设计了一种基于ADP3806的高功率发光二极管(LED)的高效驱动电路。ADP3806是一款开关模式电源控制器,拥有双环路恒定电压和恒定电流控制、远程精确电流检测以及关断和可编程可同步开关频率,能提供恒定电流。同时在设计中利用单端原边电感转换器(SEPIC),其可以提供一种可以高于或低于输入电压的输出电压,在适当的占空比下工作,使连续传导模式(CCM)和脉冲宽度调制(PWM)控制变得简单,提高了效率,并且避免由变压器泄漏电感带来的电压尖峰和振铃。从而在需要进行升压和降压转换来同时驱动多个高功率LED的场合,这个设计是非常适合的。     

细长型高功率脉冲氙灯

高功率脉冲氙灯主要在惯性约束聚变(ICF)研究中用作高功率激光驱动器的抽运光源,其各项性能和使用寿命对高功率激光驱动器的整体工作性能影响很大。在改进制灯材料和管壁结构的基础上,研制了两种不同规格的细长型高功率脉冲氙灯:一种是in16 mm,放电弧长为1140 mm;另一种是in17 mm,放电弧长为1270 mm。研制的细长型高功率脉冲氙灯,其极限负载能量大、工作寿命长、辐射效率高,工作性能较原先脉冲氙灯有很大的改进和提高。     

高功率LED恒流源串联驱动器的设计

本文着重介绍任意个(1￣20个)高功率LED串联的恒流源驱动器。它能有效克服并联LED驱动器的缺点,明显扩展和提高了市场上已出现的高功率LED串联驱动器的应用范围和性能。     

一种高性能的新型脉冲激光电源

介绍了一种高性能、用于中小功率脉冲激光器的新型开关电源,它采用Cuk变换器作为主电路的拓扑.文章分析了主电路和控制电路的工作原理,给出了测试结果.与传统电路相比,电源具有结构简单,性能优异,使用元器件少,价格低廉等优点.     

Investigation of dynamic color deviation mechanisms of high power light-emitting diode

Environmental concerns have led to the popularity of solid stating lighting, in which a high quality white light source depends on the stable property of light emitting diode. This study examines a white-light high-power light-emitting diode composed of a blue chip and yellow phosphor. A white-light light-emitting diode can be divided into four parts—a blue chip, yellow phosphor, transparent silicone, and reflector. In a transient experiment, the wavelength shift of the blue chip markedly affects the conversion efficiency of yellow phosphor, causing white-light deviation, especially in the sharp variation region of absorption of yellow phosphor. A series of short-term experiments was conducted to identify the mechanisms of color deviation between yellow phosphor and transparent silicone. The robustness of commercial phosphor and silicone was much stronger than expected. In addition to a yellowed reflector and blue chip degradation, several combinations of degradation mechanisms between yellow phosphor and transparent silicone. In a long-term experiment, damaged silicon confines blue light resulting in warm white light. Two suggestions are provided to obtain white-light light-emitting diodes with high color reliability.     

Obtaining high efficiency at low power using a quantum-dotmicrocavity light-emitting diode

Efficiencies are calculated for quantum-dot apertured-microcavity light-emitting diodes. Although the maximum efficiency depends strongly on the quantum-dot inhomogeneous broadening, greater than 20% efficiency is calculated for a small-sized apertured microcavity, even for an inhomogeneous linewidth as large as 30 meV. The efficiency can be increased to 40% if the inhomogeneous linewidth is reduced to 10 meV and to more than 60% if the inhomogeneous linewidth is eliminated to leave a homogeneous linewidth of 6.6 meV. The maximum output powers are ~40 nW, although a microarray can increase this value. For the case of a single quantum dot, an efficiency >80% is estimated for a submicron apertured-microcavity, with a maximum output power of ~3 nW     

Efficient silicon light-emitting diode with temperature-stable spectral characteristics

The influence of temperature on the parameters of the band-to-band emission spectrum of a light-emitting diode based on single-crystal silicon was investigated; the unprecedentedly high stability against variations in temperature was observed for both the electroluminescence intensity at the peak of the spectral distribution (I _EL ^m ) and the wavelength corresponding to this peak (λ_m). The internal quantum efficiency of the light-emitting diode at room temperature is estimated as no lower than 0.1%. The value of I _EL ^m varies by no more than ～10% as the temperature is varied from 120 to 300 K. The value of λ_m remains virtually constant in the temperature range of 200–300 K. The unprecedentedly high stability of λ_m is related to interference effects in the oxide film through which the radiation of the light-emitting exits. It is shown that one of the important factors that govern the temperature stability of I _EL ^m is a decrease in the lifetime of the minority charge carriers with decreasing temperature.     

Static characteristics of high-barrier Schottky diode under high injection level

Static J–V, σ–J, γ–J characteristics based on numerical 1D simulation for Me–n–n⁺ and Me–n structures are given. The forward voltage drop of the former structure is less then the last one under high level injection because of LH (nn⁺) junction reflecting properties with respect to minority carriers. Holes stimulate base conductivity modulation but, in spite of this, the hole current gives a negligible contribution to the total current. It is shown that the injection ratio is a less significant parameter compared to base conductivity modulation if it is necessary to estimate charge storage. Influence of substrate is investigated. In addition to forming an LH barrier, the substrate acts as a source of majority carriers and defines the forward voltage drop across the diode structure. Bandgap narrowing in the substrate is taken into account. A comparison with experimental results is also given.     

大功率平面连接结构倒装LED的热仿真及热分析

Conventional GaN-based flip-chip light-emitting diodes （CFC-LEDs） use Au bumps to contact the LED chip and Si submount, however the contact area is constrained by the number of Au bumps, limiting the heat dissipation performance. This paper presents a flat surface high power GaN-based flip-chip light emitting diode （SFC-LED）, which can greatly improve the heat dissipation performance of the device. In order to understand the thermal performance of the SFC-LED thoroughly, a 3-D finite element model （FEM） is developed, and ANSYS is used to simulate the thermal performance. The temperature distributions of the SFC-LED and the CFC-LED are shown in this article, and the junction temperature simulation values of the SFC-LED and the CFC-LED are 112.80 ℃ and 122.97℃C, respectively. Simulation results prove that the junction temperature of the new structure is 10.17 ℃ lower than that of the conventional structure. Even if the CFC-LED has 24 Au bumps, the thermal resistance of the new structure is still far less than that of the conventional structure. The SFC-LED has a better thermal property.     

Deep blue light-emitting diode based on high molecular weight poly(9,9-dioctylfluorene) with high efficiency and color stability

A highly efficient deep blue polymer light-emitting diode based on poly(9,9-dioctylfluorene) is demonstrated. The performance is found to increase significantly with the molecular weight. Two different molecular weights are compared, one is 71,000 and the other is 365,000. The electroluminescent efficiency and color stability are improved by slightly doping hole traps into the emission layer and bilayer structure. The maximum efficiency is 3.8 cd/A with the corresponding external quantum efficiency of 3.7% at deep blue with Commission Internationale de L’Eclairage (CIE) coordinate at (0.15, 0.09). Stable blue emission is maintained up to 6600 cd/m² without growth of green shoulder in emission spectrum.     

半导体激光器特性微机测量系统

建立了一个微机控制的LD特性测量系统.本文重点介绍了系统设计、各部件的功能和有关软件,并且给出了若干实验结果.实验表明,微机测试技术比原有的测试技术好得多,在半导体激光器的制造和应用领域有着广泛的用途.     

Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface

This investigation describes the development of InGaN-GaN light-emitting diode (LED) with a nano-roughened top p-GaN surface which uses Ni nano-mask and wet etching. The light output of the InGaN-GaN LED with a nano-roughened top p-GaN surface is 1.4 times that of a conventional LED, and wall-plug efficiency is 45% higher. The operating voltage of InGaN-GaN LED was reduced from 3.65 to 3.5 V at 20 mA and the series resistance was reduced by 20%. The light output is increased by the nano-roughening of the top p-GaN surface. The reduction in the series resistance can be attributed to the increase in the contact area of nano-roughened surface.     

基于DE150的高速大电流窄脉宽半导体激光电源

总结了一种基于射频MOSFET管的高速大电流窄脉宽半导体激光驱动源设计方法,运用PSpice对整个驱动电路进行了仿真,最后利用DE150-201N09A MOSFET管制作了面积为12cm2的电路板,测试结果表明半导体激光器输出电流脉宽10ns左右、上升时间4ns,最大脉冲电流27A,最高重复频率可达50 kHz。