890 mW Diode Pumped Nd:YVO4 Intracavity-doubled Red Light Laser

A diode-pumped Nd3+:YVO4 emitting at 1342 nm and 671 nm was developed. Low concentration neodymium doped Nd:YVO4 shows excellent stability at 1342 nm. With a type-Ⅱ noncritical phase-matched LBO crystal as the intracavity frequency doubler, 890 mW of 671 nm light was obtained at 11.2 W incident pumping power, the optical-optical conversion efficiency is 7.9%.     

激光二极管端面抽运的1342nmNd：YVO4激光器

报道了用高功率线列阵光纤耦合激光二极管端面抽运的１３４２ｎｍＤｄ：ＹＶＯ４激光器,在１３．３０Ｗ输入抽运功率下,１３４２ｎｍ激光输出功率达到３．２２Ｗ,斜效率为２５．５％。输出功率不稳定度小于１％。     

激光二极管端面抽运Nd:YVO4实现1386 nm连续波激光输出

在Nd:YVO4晶体的4F3/2-4I13/2跃迁带内,除了1342 nm激光辐射之外,其它的跃迁谱线由于小的受激发射截面和强的寄生振荡,很难形成激光振荡.通过调整谐振腔损耗,获得了光纤耦合激光二极管端面抽运1386 nmNd:YVO4激光器激光连续输出.在抽运功率达到4.24 W时,得到了305 mW的1386 nm激光连续输出,最高输出功率下的斜效率为13.9%.实验中还观察到了1342 nm和1386 nm的双波长运转.根据抽运阈值能量和实验数据,计算得到了Nd:YVO4晶体中1386 nm激光辐射处的受激发射截面大约为(3±1)×10-19cm2.     

Microchip Nd:vanadate lasers at 1342 and 671nm

As much as 105 mW of single-frequency output at 1342 nm was obtained from a diode-laser-pumped Nd:YVO(4) microchip laser. An intracavity frequency-doubled device generated 10 mW of single-frequency red radiation.     

Efficient generation of continuous-wave yellow light by single-pass sum-frequency mixing of a diode-pumped Nd:YVO(4) dual-wavelength laser with periodically poled lithium niobate

We report efficient generation of cw yellow light by use of single-pass sum-frequency mixing from a diode-pumped Nd:YVO(4) dual-wavelength laser with periodically poled lithium niobate. A diode-pumped Nd:YVO(4) dual-wavelength laser is implemented with a three-mirror cavity, and the optimum oscillation condition is obtained from theoretical analysis. We extracted 78 mW of power at 593 nm from 1.2 W at 1064 nm and from 1.0 W at 1342 nm in a beam with excellent quality. The output power could probably be increased to ~92 mW by antireflection coating of the crystal.     

Generation of UV radiation at 335.5 nm based on frequency-quadrupling of a diode-pumped Nd:YVO4 laser

The generation of ultraviolet （UV） light at 335.5 nm based on frequency quadrupling of a diode-end- pumped Q-switched Nd：YVO4 laser at 1342 nm was demonstrated. KTP crystal was used for generation of wavelength of 671 nm by intracavity doubling and LBO （BBO） crystal was exploited for the subsequent external fourth harmonic generation （FHG）. With 6.3-W absorbed pump power and 10-kHz frequency repetition rate, the UV output power of 35 and 63 mW were obtained by using LBO and BBO as frequency quadrupling nonlinear crystals, respectively. The experimental results show that the conversion efficiency （red-UV） of 6.4% for BBO crystal is higher than that of 3.5% for LBO crystal, but the UV beam quality obtained by LBO crystal is better than by BBO crystal.     

LBO Ⅰ类临界相位匹配内腔和频555 nm激光器

报道了全固态连续波555 nm激光器.555 nm激光是分别由Nd:YAG和Nd:YVO4晶体的946 nm和1342 nm谱线非线性和频产生,两条谱线在各自晶体对应能级跃迁分别为4F3/2-4Ⅰ9/2和4F3/2-4Ⅰ13/2.实验中采用复合折叠腔结构,利用LBOI类临界相位进行腔内和频,当注入Nd:YAG和Nd:YVO4晶体的泵浦功率分别为20 W和10 W时,获得1.06 W的TEM00连续波555 nm激光输出.4小时功率稳定度优于±3.3%.实验结果表明采用两种激光晶体进行腔内和频是获得激光的高效方法,并可以应用到其它两种激光晶体进行腔内非线性和频,获得更多不同波长激光输出.     

Red, yellow, green and blue – four-color light from a single, aperiodically poled LiTaO3 crystal

We demonstrate simultaneous quasi-continuous wave generation of red, yellow, green and blue coherent radiation based on quadruple quasi-phase matching (QPM) frequency upconversion from a single, aperiodically poled LiTaO₃ (APPLT) crystal with a diode-pumped Nd:YVO₄ dual-wavelength laser oscillating at 1342 and 1064 nm. We designed and prepared an APPLT crystal, which can provide four pertinent reciprocals for simultaneous quadruple QPM processes. Namely, frequency doubling of 1342 nm generates red light at 671 nm, sum-frequency mixing of 1342 nm and 1064 nm produces yellow light at 593 nm, frequency doubling of 1064 nm achieves green light at 532 nm and sum-frequency mixing of 1342 nm and 671 nm obtains blue light at 447 nm. PACS 42.65.Ky; 42.79.Nv; 42.55.Xi; 42.72.Bj     

InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd:YVO4 laser at 1342 nm

We report that InAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO4 lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained.     

LD泵浦Nd:YVO4/LBO腔内和频连续黄光激光器

用国产半导体激光二极管泵浦Nd:YVO4晶体,通过优化膜系,调节1064 nm谱线的线性损耗以达到与弱谱线1342 nm 增益匹配,在室温下实现1064 nm和1342 nm双波长连续运转,并通过Ⅰ类临界相位匹配LBO晶体腔内和频在国内首次实现593.5 nm黄色激光连续输出,当泵浦注入功率为1.8 W时和频黄激光最大输出达85 mW,光光转换效率为4.7%,功率稳定性24 h内优于±2.8%.     

激光二极管抽运Nd∶YVO4/LBO红光激光器研究

报道了激光二极管抽运的Nd∶YVO4晶体、LBO晶体Ⅱ类非临界相位匹配腔内倍频大功率红光激光器。通过对激光晶体热效应的考虑 ,设计了热不灵敏腔 ,采用低掺杂浓度Nd∶YVO4晶体 ,获得了 6 71nm红光的最高输出为890mW。     

All-solid-state doubly resonant sum-frequency continuous-wave laser at 555 nm

A new kind of resonator for doubly resonant continuous-wave (CW) intracavity sum-frequency mixing(SFM) is presented. A coherent radiation of 327 mW at 555 nm is generated by mixing 1342-nm Nd:YVO4 laser and 946-nm Nd:YAG laser. The M2 beam quality factor of the sum-frequency mixed yellow-green laser is less than 1.7. The low-noise characteristic of the yellow laser is demonitrated.     

激光二极管抽运Nd∶YVO4晶体1342nm和671nm激光器研究

报道了激光二极管抽运的Nd∶YVO₄晶体1342和671nm激光特性.1342nm激光最大输出功率为1.75W，光-光转换效率为32.1%，斜效率为43%.利用Ⅰ类非临界相位匹配LBO晶体腔内倍频，当输入抽运功率为6W时，获得功率为502mW的671nm激光输出，光-光转换效率超过8.3%；当671nm激光输出功率为400mW时，短期的不稳定度小于2%. 关键词：     

BIBO腔内和频593 nm激光器

采用激光二极管纵向泵浦Nd∶YVO4晶体,用一个线性平凹腔实现了1064 nm和1342 nm双波长连续波振荡,经BIBO腔内和频得到了593 nm的激光输出.当泵浦输入功率为1.4 W时593 nm激光输出功率为48.5 mW. 593 nm激光功率的均方根稳定性＜2.0%,光斑椭圆度为0.90,峰-峰值噪音小于0.5%.     

Compact efficient all-solid-state eye-safe laser with self-frequency Raman conversion in a Nd:YVO4 crystal

An efficient compact eye-safe laser at 1525 nm is presented by use of self-frequency Raman conversion in a diode-pumped actively Q-switched Nd:YVO4 1342-nm laser. At an incident pump power of 13.5 W, the self-stimulated Raman laser produces 1.2 W of 1525-nm average output power at a repetition rate of 20 kHz. The corresponding peak power at 1525 nm is generally greater than 10 kW for repetition rates from 5 to 20 kHz.     

LBOⅠ类非临界相位匹配腔内倍频671 nm激光器

报道了利用１类非临界相位匹配的ＬＢＯ晶体腔内倍频、激光二级管泵浦的Ｎｄ：ＹＶＯ４４激光器,在吸收泵浦功能５．４４Ｗ时,获得２４０ｍＷ的６７１ｎｍ激光输出,光－光转换效率约４．４％。     

Diode-pumped passively mode-locked Nd:YVO4 laser at 1342 nm with periodically poled LiNbO3

In this Letter, we demonstrate a nonlinear-mirror (NLM) mode-locked diode-pumped solid-state Nd:YVO4 laser operating at 1342?nm, in which the NLM comprises a periodically poled LiNbO3 crystal and a dichroic mirror. The self-starting threshold for cw mode locking is 1.5?W, which is significantly lower than that of saturable absorber mode locking. An average power of 1.52?W at 1342?nm is obtained under diode pump power of 10?W at 808?nm, with the slope efficiency being up to 16.8%. The pulse width and the repetition rate of the mode-locked laser output are about 9.5?ps and 101?MHz, respectively.     

All-solid-state continuous wave doubly linear resonator sum-frequency mixing yellow laser

We report a continuous-wave (CW) yellow laser emission by sum-frequency mixing in Nd:YVO4 crystal. Using type-II critical phase-matching KTP crystal, a yellow laser at 593.5 nm is obtained by 1064 and 1342 nm intracavity sum-frequency mixing. The maximum laser output power of 2.1 W is obtained when an incident pump laser of 18.2 W is used. At the output power level of 2.1 W, the output stability is better than 3.2%.     

InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-microm lasers

A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 microm. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained.     

腔内倍频Nd:YVO4晶体激光获得的大功率671nm红光

本文报道了由双端泵浦Nd:YVO4晶体产生1342nm基频光，经过非线性晶体LBO腔内产生的671nm的红光光源。泵浦功率19.5W时，产生的671nm的红光平均功率是2.9W。光光转换效率为14.9%。分析了最近泵浦光斑尺寸，最佳聚焦位置，减少热透镜效应对输出功率的影响。双端泵浦结构和准连续运行模式大大减弱了热透镜效应。