Characteristic features of the low-temperature thermal conductivity of highly-enriched and natural germanium

Experimental data on the thermal conductivity K(T) of natural and highly enriched (99.99%) Ge⁷⁰ crystals with ground and polished surfaces are analyzed in the temperature interval ∼2–8 K. In all samples, the boundary scattering mechanism predominates in the interval from 2 to 4.0 K. As temperature increases, in highly enriched samples N processes start to contribute to phonon transport and the behavior of K(T) corresponds to viscous Poiseuille flow of a phonon gas. The isotopic scattering mechanism plays a large role in isotopically nonideal samples. Fiz. Tverd. Tela (St. Petersburg) 40, 1604–1607 (September 1998)     

Thermal conductivity of crystalline fullerite C60 in the simple cubic phase

The behavior of the thermal conductivity k(T) of bulk faceted fullerite C₆₀ crystals is investigated at temperatures T=8–220 K. The samples are prepared by the gas-transport method from pure C₆₀, containing less than 0.01% impurities. It is found that as the temperature decreases, the thermal conductivity of the crystal increases, reaches a maximum at T=15–20 K, and drops by a factor of ∼2, proportional to the change in the specific heat, on cooling to 8 K. The effective phonon mean free path λ _p, estimated from the thermal conductivity and known from the published values of the specific heat of fullerite, is comparable to the lattice constant of the crystal λ _p∼d=1.4 nm at temperatures T>200 K and reaches values λ_p∼50d at T<15 K, i.e., the maximum phonon ranges are limited by scattering on defects in the volume of the sample in the simple cubic phase. In the range T=25−75 K the observed temperature dependence k(T) can be described by the expression k(T)∼exp(Θ/bT), characteristic for the behavior of the thermal conductivity of perfect nonconducting crystals at temperatures below the Debye temperature Θ (Θ=80 K in fullerite), where umklapp phonon-phonon scattering processes predominate in the volume of the sample. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 8, 651–656 (25 April 1997)     

Electron mobility in compensated VPE GaAs films

Electron Hall mobilities were measured on a series of intentionally compensated vapor phase epitaxy (VPE) GaAs layers. Using Sn and Zn as dopants, compensation ratiosK=(N_D+N_A)/(N_D-N_A) as high as 50 were obtained. Already for samples with the lowestK values the 300 K mobilities are higher than the 77 K values. In the range 20<T<100 [K] the data may be represented by μ∼T ^α with α increasing from 0.6 to 1.1 with compensation. The experimental μ values are smaller than those predicted from current models in all cases. It appears that scattering at ionized impurities is the dominant process also at temperatures well above 77 K, and that this scattering process is quantitatively underestimated in current models.     

Temperature dependence of electric resistance and magnetoresistance of pressed nanocomposites of multilayer nanotubes with the structure of nested cones

Bulk samples of carbon multilayer nanotubes with the structure of nested cones (fishbone structure) suitable for transport measurements, were prepared by compressing under high pressure (∼25 kbar) a nanotube precursor synthesized through thermal decomposition of polyethylene catalyzed by nickel. The structure of the initial nanotube material was studied using high-resolution transmission electron microscopy. In the low-temperature range (4.2–100 K) the electric resistance of the samples changes according to the law ln R ∝ (T ₀/T)^1/3, where T ₀∼7 K. The measured magnetoresistance is quadratic in the magnetic field and linear in the reciprocal temperature. The measurements have been interpreted in terms of two-dimensional variable-range hopping conductivity. It is suggested that the space between the inside and outside walls of nanotubes acts as a two-dimensional conducting medium. Estimates suggest a high value of the density of electron states at the Fermi level of about 5×10²¹ eV⁻¹ cm⁻³. Zh. éksp. Teor. Fiz. 113, 2221–2228 (June 1998)     

Magnetic and thermal properties of CuFeS<Subscript>2</Subscript> at low temperatures

The magnetic moment M, the magnetic susceptibility χ, and the thermal conductivity of chalcopyrite CuFeS₂, which is a zero-gap semiconductor with antiferromagnetic ordering, have been measured in the temperature range 10–310 K. It has been revealed that the quantities χ(T) and M(T) increase anomalously strongly at temperatures below ∼100 K. The temperature dependence M(T) is affected by the magnetic prehistory of the sample. An analysis has demonstrated that the magnetic anomalies are associated with the presence of a system of noninteracting magnetic clusters in the CuFeS₂ sample under investigation. The formation of the clusters is most likely caused by the disturbance of the ordered arrangement of Fe and Cu atoms in the metal sublattice of the chalcopyrite, which is also responsible for the phase inhomogeneity of the crystal lattice. The inhomogeneity brings about strong phonon scattering, and, as a result, the temperature dependence of the thermal conductivity coefficient exhibits a behavior characteristic of partially disordered crystals.     

On the lower critical field and phase diagram of a thin cylindrical type-II superconductor

The lower critical field H _c1 ^cyl (T) of a superconducting cylinder with radius r ₀∼ξ(T)≪λ(T) is found on the basis of the Ginzburg-Landau theory with various boundary conditions. These results together with the well-known results for the upper critical field are used to construct phase diagrams in terms of the field versus the reduced radius r ₀∼ξ(T) variables. The jump in the average magnetization at H _c1 ^cyl (T) is calculated as a function of the reduced radius. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 8, 537–542 (25 April 1999)     

Thermal conductivity of high-porosity biocarbon preforms of beech wood

This paper reports on measurements performed in the temperature range 5–300 K for the thermal conductivity κ and electrical resistivity ρ of high-porosity (cellular pores) biocarbon preforms prepared by pyrolysis (carbonization) of beech wood in an argon flow at carbonization temperatures of 1000 and 2400°C. X-ray structure analysis of the samples has been performed at 300 K. The samples have revealed the presence of nanocrystallites making up the carbon matrices of these biocarbon preforms. Their size has been determined. For samples prepared at T _carb = 1000 and 2400°C, the nanocrystallite sizes are found to be in the ranges 12–25 and 28–60 κ(T) are determined for the samples cut along and across the tree growth direction. The thermal conductivity κ increases with increasing carbonization temperature and nanocrystallite size in the carbon matrix of the sample. Thermal conductivity measurements conducted on samples of both types have revealed an unusual temperature dependence of the phonon thermal conductivity for amorphous materials. As the temperature increases from 5 to 300 K, it first increases in proportion to T, to transfer subsequently to ∼T ^1.5 scaling. The results obtained are analyzed.     

Low temperature dependence of the penetration depth in YBCO thin films revisited by mm wave transmission and surface impedance measurements

We report results obtained with two different experimental set-ups in state-of-the-art YBCO thin films as similar as possible, prepared by pulsed laser deposition on LaAlO₃ substrates: a surface impedance measurement on 4000 ? thick films using a parallel plate resonator (10 GHz), and a far infrared transmission (100-400 GHz) measurement which requires thinner (1000 ?) samples. The former measurement yields the temperature variation of the penetration depth λ(T) and the real part of the conductivity, provided the absolute value of λ(T) is known. The latter yields the imaginary part of the conductivity, hence the absolute value of the penetration depth, as well as its temperature dependence at the measuring frequency. Combining these two experiments, we establish a quasi-linear temperature variation of λ(T), with a 2 ? K^-1 low temperature slope, and a fairly large zero temperature value λ(T = 0)=(1800±200) ? . The scattering rate of the quasi-particles calculated from a two-fluids model shows that the films compare to good quality single crystals, where twice a larger slope has been found. This surprising behavior is described in detail, including an in-depth structural analysis of the samples in order to evaluate their similarities. We find that the 10 GHz data obtained in the thickest films can be fitted to the dirty d-wave mode in the unitarity limit, with an extrapolated slope of 3 ? K^-1, but yield a scattering rate that is difficult to reconcile with the high T _c (92 K) of the films. Received 7 May 2001 and Received in final form 18 October 2001     

Landau level quantization and possible superconducting instabilities in highly oriented pyrolitic graphite

Measurements of the basal-plane resistivity ρ _a(T,H) performed on highly oriented pyrolitic graphite, with magnetic field H∥c-axis in the temperature interval 2–300K and fields up to 8 T, provide evidence for the occurrence of both field-induced and zero-field superconducting instabilities. Additionally, magnetization M(T,H) measurements suggest the occurrence of Fermi surface instabilities which compete with the superconducting correlations. Fiz. Tverd. Tela (St. Petersburg) 41, 2135–2138 (December 1999)     

Transverse Nernst-Ettingshausen effect, resonant scattering, and superconductivity in SnTe: In

The temperature dependences of the coefficient of the transverse Nernst-Ettingshausen effect in SnTe: In samples with different indium contents (1–16 at %) in the temperature range 100–300 K and the electrical resistivity at temperatures of 1.2–4.2 K and in magnetic fields of up to 10 kOe are investigated. The data obtained indicate the presence of resonant hole scattering into the band of quasi-local In impurity states in Sn_1?x In _x Te samples with In content x ≥ 0.05 and a superconducting transition with a critical temperature T _c ～ 1.5–2.2 K. The SnTe: In samples with the degree of filling of impurity states by electrons, which is close to 1/2, and the Fermi level ?_F pinned in the vicinity of the minimum energy dependence of the relaxation time τ(?) are characterized by inhomogeneities of a new type, i.e., inhomogeneities of the scattering parameter r = ?lnτ/?ln?| $ \varepsilon _F The temperature dependences of the coefficient of the transverse Nernst-Ettingshausen effect in SnTe: In samples with different indium contents (1–16 at %) in the temperature range 100–300 K and the electrical resistivity at temperatures of 1.2–4.2 K and in magnetic fields of up to 10 kOe are investigated. The data obtained indicate the presence of resonant hole scattering into the band of quasi-local In impurity states in Sn_1−x In _x Te samples with In content x ≥ 0.05 and a superconducting transition with a critical temperature T _c ∼ 1.5–2.2 K. The SnTe: In samples with the degree of filling of impurity states by electrons, which is close to 1/2, and the Fermi level ɛ_F pinned in the vicinity of the minimum energy dependence of the relaxation time τ(ɛ) are characterized by inhomogeneities of a new type, i.e., inhomogeneities of the scattering parameter r = ϖlnτ/∂lnɛ|, which are induced by fluctuations of the degree of filling of quasi-local states by electrons. Original Russian Text ? S.A. Nemov, V.I. Proshin, G.L. Tarantasov, R.V. Parfen’ev, D.V. Shamshur, A.V. Chernyaev, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 3, pp. 461–464.     

Internal friction in directed-crystallization (Cu-Sn)-Nb alloys

The distinctive features of the low-frequency internal friction Q ⁻¹(T) of (Cu-Sn)-Nb composites at high temperatures (up to 400°C) are investigated for strains in the range 10⁻⁵–10⁻⁴. Considerable hysteresis of Q ⁻¹(T) in the heating-cooling cycle is recorded, including the presence of a minimum at ∼175°C when the sample is heated to 400°C and two peaks P ₂ (at 280°C) and P ₁ (at ∼100°C) when the sample is cooled from 400°C. The activation energy of the anomalous internal friction background (up to 175°C), the oxygen diffusion parameters, and the oxygen concentration in the niobium fibers (all of which govern the peak P ₂) are calculated, and the value and temperature dependence of the yield point of the bronze matrix (which govern the peak P ₁) are estimated. Zh. Tekh. Fiz. 68, 114–117 (November 1998)     

Thermopower in quasi-two-dimensional (BEDT-TTF) m X n organic conductors

Thermopower of (BEDT-TTF) _m X _n organic conductors has been studied using a dedicated measurement technique in the temperature range of 4.2 to 300 K. It turned out that some features of the thermopower in quasi-two-dimensional metals, namely the presence of a peak in the thermopower of α-(BEDT-TTF)₂MHg(SCN)₄ and a plateau in κ-(BEDT-TTF)₂Cu(NCS)₂ in the temperature interval between 10 and 50 K, are probably due to the phonon drag effect. Similar temperature dependences of the Seebeck coefficient can be satisfactorily interpreted in terms of a simple model taking into account the real experimental curve of the phonon heat capacity versus temperature, C ∝ T ², which is not described by the Debye formula. One feature distinguishing organic superconductors from magnetically ordered metals is a stronger temperature dependence of the characteristic electron-phonon scattering time τ _e-ph(T). Phonon drag effects also determine the behavior of the thermopower in the (BEDT-TTF)₃Cl₂·2H₂O organic conductor, which is characterized by a metal-insulator transition at T∼150 K. An analysis of measurements of the conductivity and thermopower vs. temperature taken together indicates that the transition in this compound has a complex nature: first (at T∼150 K) a metal-insulator transition occurs, which produces an energy gap in the band spectrum, then at a lower temperature (T∼20 K) a transition to a charge-density wave state takes place. Zh. éksp. Teor. Fiz. 113, 323–338 (January 1998)     

Anisotropic impurity scattering in palladium silver alloys

Measurements have been made of the Hall coefficientR of some alloys of silver in palladium over the temperature range 1°K to 120°K. The alloys contain between ∼1 and ∼10 at.-% silver. Values ofR were also obtained at room temperature and these were in good agreement with earlier published work. The values ofR are negative in all the alloys, and |R| increases both on reducing the temperature and increasing the silver concentration,c. Below ∼10°K, |R| becomes independent of temperature but shows a linear dependence onc, increasing by a factor of 2.5 over the concentration range measured. This increase is too great to be accounted for in terms of band structure changes alone, so we have examined the effects of anisotropic impurity scattering. To a first approximation it can be shown thatR is proportional to an anisotropy parameterA, defined asA=〈τ ²(k)〉/〈τ(k)〉², whereτ(k) represents the relaxation time of an electron in a statek, and 〈〉 is an average over the Fermi surface. In palladium we assume that the majority of the current is carried by the s-electrons. In the presence of silver impurities these electrons can be scattered into s-states or d-states with relaxation times given byτ _ss α1/c(1−c) andτ _sd α1/c ²(1−c) respectively. FollowingPlate we have assumed thatτ _ss is isotropic and thatτ _sd is anisotropic, leading to an overall anisotropic relaxation time for impurity scattering. We then find the parameterA increases approximately linearly with silver content, in accordance with our experimental results.     

Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K

The temperature dependence of the energy relaxation time τ_e (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τ_e, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ _e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τ_LOτ4.5 ps). The energy losses calculated from the τ_e data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 5, 371–375 (10 September 1996)     

Temperature dependence of the heat capacity and saturation magnetization of dilute reentrant ferrimagnetic spinels

Using model objects consisting of dilute reentrant spinels Li_0.5Fe_2.5−x Ga_xO₄ with x=1.0–1.2, this paper describes the temperature dependence of the magnetic contribution to the heat capacity, C _m (T), at H=0 and temperatures exceeding the freezing temperature (T _f ∼10 K) and, for T⩾4.2 K, the low-field magnetization σ _H (T) and the saturation magnetization σ _S (T), as well as the magnetization isotherms σ _T (T) in fields of up to 10 kOe. The specific features of the behavior of the overall characteristics of C _m (T) and σ _S (T) are found for the states of a frustrated ferrimagnetic that occur in the conditions considered here (H=0 and T>T _f or T⩾4.2 K and strong magnetic fields) and are discussed in connection with changes in the magnetic excitation spectrum caused by local breakdowns of collinear spin ordering and frustrations. Zh. éksp. Teor. Fiz. 113, 1339–1349 (April 1998)     

Geometric Quantization¶and the Generalized Segal--Bargmann Transform¶for Lie Groups of Compact Type

Let K be a connected Lie group of compact type and let T ^*(K) be its cotangent bundle. This paper considers geometric quantization of T ^*(K), first using the vertical polarization and then using a natural K?hler polarization obtained by identifying T ^*(K) with the complexified group K _ℂ. The first main result is that the Hilbert space obtained by using the K?hler polarization is naturally identifiable with the generalized Segal–Bargmann space introduced by the author from a different point of view, namely that of heat kernels. The second main result is that the pairing map of geometric quantization coincides with the generalized Segal–Bargmann transform introduced by the author. This means that the pairing map, in this case, is a constant multiple of a unitary map. For both results it is essential that the half-form correction be included when using the K?hler polarization. These results should be understood in the context of results of K. Wren and of the author with B. Driver concerning the quantization of (1+1)-dimensional Yang–Mills theory. Together with those results the present paper may be seen as an instance of “quantization commuting with reduction”. Received: 28 June 2001 / Accepted: 17 September 2001     

Photoinduced phase transition in Ag3AsS3 crystals

It is shown that the illumination of samples leads to the appearance of anomalies in the temperature dependences of the propagation velocity of longitudinal ultrasonic waves along the principal crystallographic directions of proustite (Ag₃AsS₃) at T∼150 K. The features discovered are associated with a photoinduced phase transition caused by restructuring of the cation sublattice of proustite. Fiz. Tverd. Tela (St. Petersburg) 41, 702–704 (April 1999)     

Raman scattering in germanium at high pressure: Isotope effects

The first-order Raman scattering in isotopically enriched samples of germanium ⁷⁰Ge, ⁷²Ge, and ⁷⁴Ge and germanium with the natural isotopic composition is investigated at high pressures. It is found that the isotopic dependence of the frequency of the LTO(Γ) mode in isotopically pure germanium samples can be described in the harmonic approximation (ν∝m ^−1/2). At the same time, the frequency of the LTO(Γ) mode of germanium of natural isotopic composition apparently contains a contribution due to isotopic disorder effects. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 3, 211–214 (10 February 1999)     

Peculiarities of crystal field effects in CeInCu2 based heavy-fermion compounds

We have studied the evolution of the inelastic neutron magnetic scattering spectra of a compound with cubic symmetry, CeInCu₂, in the temperature range 10–130 K, and also their transformation with variation of the Kondo temperature T _K due to substitution of cerium ions in the system Ce_1−x (La,Y)_xInCu₂ at T=10 K. It turns out that the energy of the transition between the ground state and excited state of the 4 f electrons (Δ_CF) in the crystal electric field in CeInCu₂ increases with growth of the population of the ground state as the temperature is reduced, with a slight change in its intensity. Such behavior is inconsistent with the notion of classical one-ion effects of the crystal electric field. We have found that the scale of the observed variations in the excitation spectra of the 4f electrons depends on the Kondo temperature T _K and is insensitive to disorder in the rare-earth sublattice. Thus, despite the fact that T _K ≪Δ_CF, hybridization with states in the conduction band has a substantial effect on all parameters of the excitation spectrum of the ground multiplet of the 4f electrons at low temperatures. Zh. éksp. Teor. Fiz. 115, 2197–2206 (June 1999) A. A. Baikov Institute of Metallurgy     

Preparation, magnetoresistance and magnetocaloric effect of two-layered perovskite La 2.5- x K 0.5+ x Mn 2 O 7+δ

Polycrystalline two-layered perovskite La_2.5-xK_0.5+xMn₂O _{7 + δ} (0 < x < 0.5) samples have been prepared by a modified sol-gel method and their magnetoresistance and magnetocaloric effects have been studied. A large deviation between the metal-insulator (MI) transition temperature (T _ρ ) and the magnetic transition temperature (T_C) is observed. Large magnetoresistance (MR) effects with Δρ/ρ of ∼40% at 12 kOe are obtained in wide temperature ranges. The maximum of the magnetic entropy change peaks at its Curie temperature (T_C), far above its MI transition temperature (T _ρ ). The large magnetic entropy change (∼1.4 J/kg.K) is obtained in the sample La_2.5-xK_0.5+xMn₂O _{7 + δ} (x = 0.35) upon 10 kOe applied magnetic field. Received 2 May 2002 / Received in final form 1st October 2002 Published online 19 December 2002 RID="a" ID="a"e-mail: wzhong@ufp.nju.edu.cn