Surface reaction mechanism of Y2O3 atomic layer deposition on the hydroxylated Si(1 0 0)-2 × 1: A density functional theory study

The surface reaction mechanism of Y₂O₃ atomic layer deposition (ALD) on the hydroxylated silicon surface is investigated by using density functional theory. The ALD process is designed into two half-reactions, i.e., Cp₃Y (Cp = cyclopentadienyl) and H₂O half-reactions. For the Cp₃Y half-reaction, the chemisorbed complex is formed along with the change of metal-Cp bonding from Y-C(π) to Y-C₁(σ). For the H₂O half-reactions, the chemisorbed energies are increased with the relief of steric congestion around yttrium metal center. In addition, Gibbs free energy calculations show that it is thermodynamically favorable for the Cp₃Y half-reactions. By comparing with the reaction of H₂O with {Si}-(O₂)YCp, it is thermodynamically more favorable and kinetically less favorable for the reactions of H₂O with {Si}-OYCp₂ as well as with {Si}-OYCp(OH).     

Initial growth mechanism of atomic layer deposition of ZnO on the hydroxylated Si(1 0 0)-2×1: A density functional theory study

Density functional theory (DFT) is employed to investigate the initial growth mechanism of atomic layer deposition (ALD) of ZnO on the hydroxylated silicon surfaces. Both the diethylzinc (DEZn) and the H₂O half-reactions proceed through an analogous trapping-mediated mechanism. By comparison of the reactions on silicon surfaces with single and double hydroxyl sites, we find that the existence of neighboring hydroxyl can facilitate the adsorption of DEZn and lower the activation barrier. Also, we find that it is both thermodynamically and kinetically more favorable for the reactions on silicon surfaces with double hydroxyl sites. In addition, calculations show that the DEZn half-reaction is more favorable as compared to the H₂O half-reaction.     

Surface reactions in atomic layer deposition of HfO2, ZrO2 and Al2O3 on hydroxylated and sulfur-passivated GaAs(1 0 0) surfaces: A comparative study by density functional theory

The surface reactions in atomic layer deposition (ALD) of HfO₂, ZrO₂ and Al₂O₃ on hydroxylated and sulfur-passivated GaAs surfaces are compared by using density functional theory. The HfCl₄ and ZrCl₄ half-reactions show large similarities in energetics and geometrical structure. However, both of them show large discrepancies with the Al(CH₃)₃ (TMA) half-reaction. Calculations find that it is more energetically favorable for the Al₂O₃ deposition than the HfO₂ and ZrO₂ deposition at the initial ALD stage. In addition, calculations find that although the GaAs passivation with sulfur helps to improve the interfacial properties, it is both kinetically and thermodynamically less favorable.     

The dissociative adsorption of borane on the Ge(1 0 0)-2 × 1 surface: A density functional theory study

By means of cluster models coupled with density functional theory, we have studied the hydroboration of the Ge(1 0 0)-2 × 1 surface with BH₃. It was found that the Ge(1 0 0) surface exhibits rather different surface reactivity toward the dissociative adsorption of BH₃ compared to the C(1 0 0) and Si(1 0 0) surfaces. The strong interaction still exists between the as-formed BH₂ and H adspeices although the dissociative adsorption of BH₃ on the Ge(1 0 0) surface occurs readily, which is in distinct contrast to that on the C(1 0 0) and Si(1 0 0) surfaces. This can be understood by the electrophilic nature of the down Ge atom, which makes it unfavourable to form a GeH bond with the dissociating proton-like hydrogen. Alternatively, it can be attributed to the weak proton affinity of the Ge(1 0 0) surface. Nevertheless, the overall dissociative adsorption of BH₃ on group IV semiconductor surfaces is favourable both thermodynamically and kinetically, suggesting the interesting analogy and similar diversity chemistry of solid surface in the same group.     

Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO2 gate stack

When S-termination on a Ge(1 0 0) surface was desorbed at an elevated temperature and an atomic layer deposition (ALD) HfO₂ film was deposited, interfacial thickness was less than 1 nm. As a result, the equivalent oxide thickness (EOT) of the stack on the initially S-terminated surface was thinner than that deposited on the O₃-oxidized surface, while HfO₂ film thickness was almost identical on both surfaces. Nevertheless, the HfO₂ stack on the initially S-terminated surface exhibited improved leakage current characteristics due to an increase in barrier height. Its thinner but robust interface will contribute to the scaling down of gate oxide integrity.     

Epitaxial growth of Nd2Hf2O7(1 1 1) thin films on Ge(1 1 1) substrates by pulsed laser deposition

Nd₂Hf₂O₇ (NHO) thin films have been epitaxially grown by pulsed laser deposition (PLD) on Ge(1 1 1) substrates. In situ reflection high-energy electron diffraction (RHEED) evolution of the (1 1 1)-oriented NHO during the deposition has been investigated and shows that the epilayer has a twin-free character with type-B stacking. Interfacial structure of NHO/Ge has been examined by high-resolution transmission electron microscopy (HRTEM). The results indicate a highly crystalline film with a very thin interface, and the orientation relationship between NHO and Ge can be denoted as (1 1 1)_NHO//(1 1 1)_Ge and . Finally, twin-free epitaxial growth of NHO with type-B orientation displays temperature dependence and the type-B epitaxy is favored at high temperature.     

Hydrogen-induced metallization on Ge(1 1 1) c(2 × 8)

We have studied hydrogen adsorption on the Ge(1 1 1) c(2 × 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which clearly indicates a charge transfer from the rest atom states to the adatom states. The surface states near the Fermi-level have been followed by ARPES as function of H exposure. Initially, there is strong emission from the rest atom states but no emission at the Fermi-level which confirms the semiconducting character of the c(2 × 8) surface. With increasing H exposure a structure develops in the close vicinity of the Fermi-level. The energy position clearly indicates a metallic character of the H-adsorbed surface. Since the only change in the STM images is the increased brightness of the adatoms neighbouring a H-terminated rest atom, we identify the emission at the Fermi-level with these adatom states.     

First-principles study of adsorption and diffusion on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces

Using first-principles total-energy calculations, we have investigated the adsorption and diffusion of Si and Ge adatoms on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces. The dimer vacancy lines on Ge/Si(0 0 1)-(2 × 8) and the alternate S_A and rebonded S_B steps on Ge/Si(1 0 5)-(1 × 2) are found to strongly influence the adatom kinetics. On Ge/Si(0 0 1)-(2 × 8) surface, the fast diffusion path is found to be along the dimer vacancy line (DVL), reversing the diffusion anisotropy on Si(0 0 1). Also, there exists a repulsion between the adatom and the DVL, which is expected to increase the adatom density and hence island nucleation rate in between the DVLs. On Ge/Si(1 0 5)-(1 × 2) surface, the overall diffusion barrier of Si(Ge) along direction is relative fast with a barrier of ∼0.83(0.61) eV, despite of the large surface undulation. This indicates that the adatoms can rapidly diffuse up and down the (1 0 5)-faceted Ge hut island. The diffusion is also almost isotropic along [0 1 0] and directions.     

Comparative study of H2 adsorption on W(1 0 0)-c(2 × 2)Cu and W(1 0 0): Surface alloying effects

The interactions of H and H₂ with W(1 0 0)-c(2 × 2)Cu and W(1 0 0) have been investigated through density functional theory (DFT) calculations to elucidate the effect of Cu atoms on the reactivity of the alloy. Cu atoms do not alter the attraction towards top-W sites felt by H₂ molecules approaching the W(1 0 0) surface but make dissociation more difficult due to the rise of late activation barriers. This is mainly due to the strong decrease in the stability of the atomic adsorbed state on bridge sites, the most favourable ones for H adsorption on W(1 0 0). Still, our results show unambiguously that H₂ dissociative adsorption on perfect terraces of the W(1 0 0)-c(2 × 2)Cu surface is a non-activated process which is consistent with the high sticking probability found in molecular beam experiments at low energies.     

A density functional theory study of CH4 dehydrogenation on Co(1 1 1)

The dehydrogenation of CH₄ on the Co(1 1 1) surface is studied using density functional theory calculation (DFT). It is found that CH₄ is favored to dissociate to CH₃ and then transforms to CH₂ and CH by sequential dehydrogenation, and CH₄ activation into CH₃ and H is the rate-determining step on the Co(1 1 1) surface. CH₂ is quite unstable on Co(1 1 1) surface. CH dehydrogenation into C and H is difficult. CH₃ and H prefer to adsorb on 3-fold hollow hcp and fcc sites, and CH₂, CH and C prefer to adsorb on hcp sites.     

STM study of the initial stages of C60 adsorption on the Pt(1 1 0)-(1 × 2) surface

We have studied the initial stages of adsorption of C₆₀ on the Pt (1 1 0)-(1 × 2) surface by means of STM. At room temperature, fullerene molecules adsorb in the troughs between two adjacent Pt rows of the missing row reconstruction. Mobility over the terraces is negligible, denoting strong bonding with the surface, also testified by a well-defined orientation of fullerene monomers with respect to the substrate. Upon annealing at 750 K, molecular migration towards kinks and step edges occurs, where small islands nucleation begins. A commensurate registry with the substrate is maintained by small (5-10 molecules) C₆₀ aggregates, leading to expanded nearest-neighbour distances with respect to those found in hexagonal close packed fullerene ad-islands grown on other metallic substrates.     

Surface chemistry of NO and NO2 on the Pt(1 1 0)-(1 × 2) surface: A comparative study

The surface chemistry of NO and NO₂ on clean and oxygen-precovered Pt(1 1 0)-(1 × 2) surfaces were investigated by means of high resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). At room temperature, NO molecularly adsorbs on Pt(1 1 0), forming linear NO(a) and bridged NO(a). Coverage-dependent repulsive interactions within NO(a) drive the reversible transformation between linear and bridged NO(a). Some NO(a) decomposes upon heating, producing both N₂ and N₂O. For NO adsorption on the oxygen-precovered surface, repulsive interactions exist between precovered oxygen adatoms and NO(a), resulting in more NO(a) desorbing from the surface in the form of linear NO(a). Bridged NO(a) experiences stronger repulsive interactions with precovered oxygen than linear NO(a). The desorption activation energy of bridged NO(a) from oxygen-precovered Pt(1 1 0) is lower than that from clean Pt(1 1 0), but the desorption activation energy of linear NO(a) is not affected by the precovered oxygen. NO₂ decomposes on Pt(1 1 0)-(1 × 2) surface at room temperature. The resulted NO(a) (both linear NO(a) and bridged NO(a)) and O(a) repulsively interact each other. Comparing with NO/Pt(1 1 0), more NO(a) desorbs from NO₂/Pt(1 1 0) as linear NO(a), and both linear NO(a) and bridged NO(a) exhibit lower desorption activation energies. The reaction pathways of NO(a) on Pt(1 1 0), desorption or decomposition, are affected by their repulsive interactions with coexisting oxygen adatoms.     

Soft X-ray appearance potential spectroscopy (SXAPS) study of TiO2(1 1 0)-1 × 2 and (0 0 1)-1 × 1 surfaces

A soft X-ray appearance potential spectroscopy (SXAPS) apparatus with high sensitivity was built to measure non-derivative spectra. SXAPS spectra (non-derivative) of Ti 2p and O 1s for TiO₂(1 1 0)-1 × 2 and (0 0 1)-1 × 1 surfaces have been measured using low incident currents (about 10 μA/cm²) and a photon counting mode. Density of empty states on Ti and O sites are deduced by self-deconvoluting the spectra. The self-deconvoluted SXAPS spectra are qualitatively similar to those measured by X-ray absorption spectroscopy (XAS). The Ti 2p_3/2 spectrum shows two strong peaks which correspond to t_2g and e_g states. For the O 1s spectrum two strong peaks near the threshold are also found which can be ascribed to O 2pπ and O 2pσ states. These results suggest that the spectra almost obey the dipole selection rule, so-called the “approximate dipole selection rule”. The SXAPS spectra of Ti 2p and O 1s for the (1 1 0) and (0 0 1) surfaces resemble qualitatively, which is consistent with the XAS results. The spectra measured on the (1 1 0)-1 × 2 surface at an incident angle of 45° off normal to the surface and on the (1 1 0) surface sputtered by Ar ions indicate that SXAPS is very sensitive to the surface electronic states.     

Density functional study of ethylamine and allylamine on Si(1 0 0)-2 × 1 and Ge(1 0 0)-2 × 1 surfaces

We have investigated the interactions of ethylamine and allylamine with models of the Si(1 0 0)-2 × 1 and Ge(1 0 0)-2 × 1 semiconductor surfaces. Ab initio molecular orbital calculations, along with density functional theory (DFT), are used to examine the interaction of these amines with cluster models of the semiconductor surfaces. The transition states and final adsorption products for adsorption of the molecules are predicted. The DFT calculations show the amines form N-dative bond states with Si(1 0 0)-2 × 1 or Ge(1 0 0)-2 × 1 as the initial adsorption product. The initial dative-bond products can be further activated, resulting in N-H bond cleavage on both surfaces. The overall reaction of a given amine on Si(1 0 0) via N-H dissociation is more exothermic than on the Ge(1 0 0) surface.     

A density functional theory study of formaldehyde adsorption and oxidation on CeO2(1 1 1) surface

The effects of different oxygen species and vacancies on the adsorption and oxidation of formaldehyde over CeO₂(1 1 1) surface were systematically investigated by using density functional theory (DFT) method. On the stoichiometric CeO₂(1 1 1) surface, the C-H bond rupture barriers of chemisorbed formaldehyde are much higher than that of formaldehyde desorption. On the reduced CeO₂(1 1 1) surface, the energy barriers of C-H bond ruptures are less than those on the stoichiometric CeO₂(1 1 1) surface. If the C-H bond rupture occurs, CO and H₂ form quickly with low energy barriers. When O₂ adsorbs on the reduced (1 1 1) surface (O₂/O_v species), the C-H bond rupture barriers of formaldehyde are greatly reduced in comparison with those on the stoichiometric CeO₂(1 1 1) surface. If O₂ adsorbs on oxygen vacancy at sub-layer surface, its oxidative roles on formaldehyde are much similar to that of O₂/O_v species.     

The 2 × 1 reconstruction of the rutile TiO2(0 1 1) surface: A combined density functional theory, X-ray diffraction, and scanning tunneling microscopy study

An extensive search for possible structural models of the (2 × 1)-reconstructed rutile TiO₂(0 1 1) surface was carried out by means of density functional theory (DFT) calculations. A number of models were identified that have much lower surface energies than the previously-proposed ‘titanyl’ and ‘microfaceting’ models. These new structures were tested with surface X-ray diffraction (SXRD) and voltage-dependent STM measurements. The model that is (by far) energetically most stable shows also the best agreement with SXRD data. Calculated STM images agree with the experimental ones for appropriate tunneling conditions. In contrast to previously-proposed models, this structure is not of missing-row type; because of its similarity to the fully optimized brookite TiO₂(0 0 1) surface, we call it the ‘brookite (0 0 1)-like’ model. The new surface structure exhibits two different types of undercoordinated oxygen and titanium atoms, and is, in its stoichiometric form, predicted to be rather inert towards the adsorption of probe molecules.     

Adsorption and dissociation of O2 on CuCl(1 1 1) surface: A density functional theory study

The adsorption and dissociation of O₂ on CuCl(1 1 1) surface have been systematically studied by the density functional theory (DFT) slab calculations. Different kinds of possible modes of atomic O and molecular O₂ adsorbed on CuCl(1 1 1) surface and possible dissociation pathways are identified, and the optimized geometry, adsorption energy, vibrational frequency and Mulliken charge are obtained. The calculated results show that the favorable adsorption occurs at hollow site for O atom, and molecular O₂ lying flatly on the surface with one O atom binding with top Cu atom is the most stable adsorption configuration. The O-O stretching vibrational frequencies are significantly red-shifted, and the charges transferred from CuCl to oxygen. Upon O₂ adsorption, the oxygen species adsorbed on CuCl(1 1 1) surface mainly shows the characteristic of the superoxo (O₂⁻), which primarily contributes to improving the catalytic activity of CuCl, meanwhile, a small quantity of O₂ dissociation into atomic O also occur, which need to overcome very large activation barrier. Our results can provide some microscopic information for the catalytic mechanism of DMC synthesis over CuCl catalyst from oxidative carbonylation of methanol.     

Solid phase epitaxy of Ge films on CaF2/Si(1 1 1)

At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF₂/Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 °C. Ge films break up into islands if higher annealing temperatures are used as demonstrated combining spot profile analysis low energy electron diffraction (SPA-LEED) with auger electron spectroscopy (AES). Annealing up to 600 °C reduces the lateral size of the Ge islands while the surface fraction covered by Ge islands is constant. The CaF₂ film is decomposed if higher annealing temperatures are used. This effect is probably due to the formation of GeF_x complexes which desorb at these temperatures.     

A density functional theory study of ethylene adsorption on Ni10(1 1 1), Ni13(1 0 0) and Ni10(1 1 0) surface cluster models and Ni13 nanocluster

Ethylene adsorption was studied by use of DFT/B3LYP with basis set 6-31G(d,p) in Gaussian’03 software. It was found that ethylene has adsorbed molecularly on all clusters with π adsorption mode. Relative energy values were calculated to be −50.86 kcal/mol, −20.48 kcal/mol, −32.44 kcal/mol and −39.27 kcal/mol for Ni₁₃ nanocluster, Ni₁₀(1 1 1), Ni₁₃(1 0 0) and Ni₁₀(1 1 0) surface cluster models, respectively. Ethylene adsorption energy is inversely proportional to Ni coordination number when Ni₁₀(1 1 1), Ni₁₃(1 0 0) and Ni₁₀(1 1 0) cluster models and Ni₁₃ nanocluster are compared with each other.     

Adsorption and dissociation of H2 on the Cu2O(1 1 1) surface: A density functional theory study

Interactions of atomic and molecular hydrogen with perfect and deficient Cu₂O(1 1 1) surfaces have been investigated by density functional theory. Different kinds of possible modes of H and H₂ adsorbed on the Cu₂O(1 1 1) surface and possible dissociation pathways were examined. The calculated results indicate that O_SUF, Cu_CUS and O_vacancy sites are the adsorption active centers for H adsorbed on the Cu₂O(1 1 1) surface, and for H₂ adsorption over perfect surface, Cu_CUS site is the most advantageous position with the side-on type of H₂. For H₂ adsorption over deficient surface, two adsorption models of H₂, H₂ adsorbing perpendicularly over O_vacancy site and H₂ lying flatly over singly-coordinate Cu-Cu short bridge, are typical of non-energy-barrier dissociative adsorption leading to one atomic H completely inserted into the crystal lattice and the other bounded to Cu_CUS atom, suggesting that the dissociative adsorption of H₂ is the main dissociation pathway of H₂ on the Cu₂O(1 1 1) surface. Our calculation result is consistent with that of the experimental observation. Therefore, Cu₂O(1 1 1) surface with oxygen vacancy exhibits a strong chemical reactivity towards the dissociation of H₂.