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1.
We report first principles calculations to analyze the ruthenium adsorption and diffusion on GaN(0 0 0 1) surface in a 2×2geometry. The calculations were performed using the generalized gradient approximation (GGA) with ultrasoft pseudopotential within the density functional theory (DFT). The surface is modeled using the repeated slabs approach. To study the most favorable ruthenium adsorption model we considered T1, T4 and H3 special sites. We find that the most energetically favorable structure corresponds to the Ru- T4 model or the ruthenium adatom located at the T4 site, while the ruthenium adsorption on top of a gallium atom (T1 position) is totally unfavorable. The ruthenium diffusion on surface shows an energy barrier of 0.612 eV. The resultant reconstruction of the ruthenium adsorption on GaN(0 0 0 1)- 2×2 surface presents a lateral relaxation of some hundredth of Å in the most stable site. The comparison of the density of states and band structure of the GaN(0 0 0 1) surface without ruthenium adatom and with ruthenium adatom is analyzed in detail.  相似文献   

2.
The first-principles calculations have been presented to study the adsorption of aluminum (Al) on the Si(0 0 1)(2×1) surface. We have investigated the optimized geometries and electronic structures of the adatom-substrate system. The adsorption energy of the system has been calculated. The most stable adsorption sites were consequently determined to be HH site and T3+T4. It is shown that the Si-Si dimer is asymmetric on the reconstructed bare surface and become symmetric upon Al adsorption. In addition, the bond length of Si-Si was found to be considerably elongated in the adsorption system. It is found that the work function change obtained in our work is different from other previous results on the adsorption of alkali metals on the Si(0 0 1) surface. In order to investigate the relative stability of phases at different coverages, the surface formation energy of the adsorption system was calculated. To shed light on the nature of the Al-Si bond and the character of silicon surface, the density of states (DOS) and difference charge density of the system were evaluated.  相似文献   

3.
The adsorption of fluorescein on the Ag(1 1 0) surface has been investigated by the first-principles pseudopotential method. Various adsorption geometries have been calculated and the energetically most favorable structure of fluorescein/Ag(1 1 0) was identified. The fluorescein molecule, in most favorable structure, is on hollow site, and the adsorption energy is 2.34 eV. Here the adsorption sites refer to the positions at the first layer of the substrate where the middle carbon atom of the fluorescein molecule is located. The bonding strength of the fluorescein molecule to the Ag substrate is site selective, being determined by electron transfer to the oxygen atoms of the molecule and local electrostatic attraction between the oxygen atoms and the silver atoms.  相似文献   

4.
Using density functional theory (DFT) in combination with nudged elastic band (NEB) method, the dissociative chemisorptions and diffusion processes of hydrogen on both pure and Fe-doped Mg(0 0 0 1) surfaces are studied. Firstly, the dissociation pathway of H2 and the relative barrier were investigated. The calculated dissociation barrier (1.08 eV) of hydrogen molecule on a pure Mg(0 0 0 1) surface is in good agreement with comparable experimental and theoretical studies. For the Fe-doped Mg(0 0 0 1) surface, the activated barrier decreases to 0.101 eV due to the strong interaction between the s orbital of H and the d orbital of Fe. Then, the diffusion processes of atomic hydrogen on pure and Fe-doped Mg(0 0 0 1) are presented. The obtained diffusion barrier to the first subsurface is 0.45 eV and 0.98 eV, respectively. Finally, Chou method was used to investigate the hydrogen sorption kinetic mechanism of pure MgH2 and Mg mixed with 5 at.% Fe atoms composites. The obtained activation energies are 0.87 ± 0.02 and 0.31 ± 0.01 eV for H2 dissociation on the pure surface and H atom diffusion in Fe-doped Mg surfaces, respectively. It suggests that the rate-controlling step is dissociation of H2 on the pure Mg surface while it is diffusion of H atom in the Fe-doped Mg surface. And both of fitting data are matching well with our calculation results.  相似文献   

5.
The interactions of H and H2 with W(1 0 0)-c(2 × 2)Cu and W(1 0 0) have been investigated through density functional theory (DFT) calculations to elucidate the effect of Cu atoms on the reactivity of the alloy. Cu atoms do not alter the attraction towards top-W sites felt by H2 molecules approaching the W(1 0 0) surface but make dissociation more difficult due to the rise of late activation barriers. This is mainly due to the strong decrease in the stability of the atomic adsorbed state on bridge sites, the most favourable ones for H adsorption on W(1 0 0). Still, our results show unambiguously that H2 dissociative adsorption on perfect terraces of the W(1 0 0)-c(2 × 2)Cu surface is a non-activated process which is consistent with the high sticking probability found in molecular beam experiments at low energies.  相似文献   

6.
Adsorption of H2 molecule on the Ti (0 0 0 1)-(2 × 1) surface was studied by density functional theory with generalized gradient approximation (GGA). The parallel and vertical absorption cases were investigated in detail by adsorption energy and electronic structure analysis, we obtained three stable configurations of FCC-FCC (the two H atoms adsorption on the two adjacent fcc sites of Ti (0 0 0 1) surface, respectively), HCP-HCP (the two H atoms adsorption on the two adjacent hcp sites of Ti (0 0 0 1) surface, respectively) and FCC-HCP (the one H atom adsorption on the fcc site and the other adsorption on the near hcp site) based on the six different parallel adsorption sites after the H2 molecule dissociates. However, all the end configurations of four vertical adsorption sites were unstable, H2 molecule was very easy to desorb from Ti surface. The H-H bond breaking and Ti-H bond forming result from the H2 molecule dissociation. H-H bond breaking length ranges from 1.9 Å to 2.3 Å for different adsorption configurations due to the strong Ti-H bond forming. The H2 dissociative approach and the end stable configurations formation in parallel adsorption processes are attributed to the quantum mechanics steering effects.  相似文献   

7.
The adsorption and decomposition of ethanethiol on GaN (0 0 0 1) surface have been investigated with first-principles calculations. The DFT calculations reveal that ethanethiol adsorbs dissociatively on the clean GaN (0 0 0 1) surface to form ethanethiolate and hydrogen species. An up limit coverage of 0.33 for ethanethiolate monolayer on GaN (0 0 0 1) surface is obtained and the position of the sulfur atom and the tilt angle of the thiolate chain are found to be very sensitive to the surface coverage. Furthermore, the reactivity of ethanethiol adsorption and further thermal decomposition reactions on GaN (0 0 0 1) surface is discussed by calculating the possible reaction pathways and ethene is found to be the major product.  相似文献   

8.
Coverage-dependent adsorption energy of the Ge/Ru(0 0 0 1) growth system and the geometrical distortions of the most stable adsorption structure are investigated through first-principles calculations within density functional theory. A local minimum in adsorption energy is found to be at a Ge coverage of 1/7 monolayer with a Ru(0 0 0 1)- symmetry. Based on this stale superstructure, the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) images are simulated by means of surface local-density of states (LDOS). The results are consistent well with the STM measurements on the phase for Ge overlayer on Ru(0 0 0 1). From this stimulation, the relations between the STM images and the lattice distortion are also clarified.  相似文献   

9.
To understand CdTe doping with In, first-principle calculations are performed to obtain the various kinds of surface-structure for In on CdTe (0 0 1) surface. Of all the structures examined, the structure of CdTe (0 0 1) as caused by In adsorption atoms at the fourfold hollow sites with 0.25 monolayer coverage is the most energetically favorable. In atoms are adsorbed on the Cd-terminated surface, whereas below the Te-terminated surface. For the Cd-terminated surface, cadmium vacancy can form spontaneously and is energetically favorable. In atoms are likely to be adsorbed/incorporated at an interstitial site on Te-terminated CdTe (0 0 1) surfaces for most of the range of the chemical potential.  相似文献   

10.
We have investigated the energetic stability and equilibrium geometry of the adsorption of transition metal Fe atoms near the self-organized Bi lines on hydrogen passivated Si(0 0 1) surface. Our total energy results show that there is an attractive interaction between Fe adatoms along the Bi-nanolines. For the energetically most stable configuration, the Fe adatoms are seven-fold coordinated, occupying the subsurface interstitial sites aside the Bi-nanolines. With increased coverage, Fe atoms are predicted to form two parallel lines, symmetrically on both sides of the Bi line. Within our local spin-density functional calculations, we find that for the most stable geometries the Fe adatoms exhibit an antiferromagnetic coupling.  相似文献   

11.
We investigated the surface properties of InAs(1 1 1)A by low-temperature scanning tunneling microscopy (LT-STM) with atomic resolution and first-principles calculation. Very clear atom image was observed, showing that the surface reconstruction is an In-vacancy structure. We also observed two kinds of adsorbates on the surface. The first-principles calculations indicate that the In-vacancy structure is the most stable surface reconstruction under any experimental conditions, which is consistent with the LT-STM observation. Investigations of adsorption properties of an In atom, an As atom, and an As2 molecule by the first-principles calculations imply that the observed adsorbates are an In atom and an As2 molecule.  相似文献   

12.
Water molecule adsorption properties at the surface of InVO4 have been investigated using an ab initio molecular dynamics approach. It was found that the water molecules were adsorbed dissociatively to the three-fold oxygen coordinated V sites on the (0 0 1) surface. The dissociative adsorption energy was estimated to be 0.8-0.9 eV per molecule. The equilibrium distance between V and O of the hydroxyl -OH was almost the same as the V-O distance of tetrahedra VO4 in the InVO4 bulk crystal (1.7-1.8 Å).  相似文献   

13.
Density functional theory calculations have been applied to investigate the adsorption geometry of water overlayers on the NaCl(1 0 0) surface in the monolayer regime. Competition between H-H intermolecular repulsion and the attraction of the polar molecules to the surface ions results in the most stable structure having a 2 × 1 adsorption symmetry with an adsorption energy of 415 meV. Overlayers of 1 × 1 symmetry, as observed in experiment, have slightly lower adsorption energies. The layers are also unstable with respect to rotation of individual molecules. Multiple hydrogens/oxygens interacting with a single substrate ion can pull that ion out of the surface, although the examples considered are energetically very unfavourable. Overlayers of 1 × 1 symmetry with a coverage of one water molecule per NaCl do not have a high enough adsorption energy to wet the surface.  相似文献   

14.
The stable adsorption sites for both Ga and N ions on the ideal and on the reconstructed LiNbO3 (0 0 0 1) surface are determined by means of first-principle total energy calculations. A single N layer is found to be more strongly bound to the substrate than a single Ga layer. The adsorption of a GaN monolayer on the polar substrate within different orientations is then modeled. On the basis of our results, we propose a microscopic model for the GaN/LiNbO3 interface. The GaN and LiNbO3 (0 0 0 1) planes are parallel, but rotated by 30° each other, with in-plane epitaxial relationship [1 0 0]GaN‖ [1 1  0]LiNbO3. In this way the (0 0 0 1) plane lattice mismatch between GaN and LiNbO3 is minimal and equal to 6.9% of the GaN lattice constant. The adsorbed GaN and the underlying LiNbO3 substrate have parallel c-axes.  相似文献   

15.
The structure of the Si(1 1 1)-6 × 1-Ag surface is investigated using crystal truncation rod (CTR) scattering along 00 rod. For the measurement, we developed a manipulator suitable for observing CTR scattering at large momentum transfer perpendicular to the surface. The heights of the silver and reconstructed silicon atoms from the substrate were determined. We also compared the obtained positions with those of the Si(1 1 1)-√3 × √3-Ag surface and found that the heights of those reconstructed atoms are almost the same.  相似文献   

16.
Using the interaction parameters up to the third neighbors and activated form of O and CO diffusion and their reaction, the model has been proposed for Monte-Carlo simulations describing the catalytic O + CO → CO2 reaction and occurring phase transitions on Pd(1 1 1) surface. Upon adsorption of CO the pre-adsorbed oxygen transforms from p(2 × 2)O phase into and phases in the limit of room and moderate temperatures, respectively. We demonstrate that the kinetic effects determine both the occurrence of the p(2 × 1)O and disappearance of the phases at moderate and low temperatures, respectively. Using reaction rate as a fit parameter, we show that at room temperature the start of the reaction can be synchronized with the occurrence of phase.  相似文献   

17.
Complex surface reconstructions and surface oxides, in particular, often exhibit complicated atomic arrangements, which are difficult to resolve with traditional experimental methods, such as low energy electron diffraction (LEED), surface X-ray diffraction (SXRD) or scanning tunnelling microscopy (STM) alone. Therefore, ab initio density functional calculations are used as a supplement to the experimental techniques, but even then the structural determination usually relies on a simple trial and error procedure, in which conceivable models are first constructed and then tested for their stability in ab initio calculations. An exhaustive search of the configuration space is usually difficult and requires a significant human effort. Solutions to this problem, such as simulated annealing, have long been known, but are usually considered to be too time-consuming in combination with first principles methods. In this work, we show that ab initio density functional codes are now sufficiently fast to perform extensive finite temperature molecular dynamics. The merits of this approach are exemplified for two cases, for a complex two-dimensional surface oxide on Pd(111), and for the oxygen induced c(6×2) reconstruction of V(110). Revised version: 15 July 2002 / Accepted: 2 October 2002 / Published online: 5 February 2003 RID="*" ID="*"Corresponding author. Fax: +43-1/4277-9514, E-mail: Georg.Kresse@univie.ac.at  相似文献   

18.
We report on the fabrication of single phase of the Si(1 1 1)-(√31 × √31)-In reconstruction surface, observed by scanning tunneling microscopy (STM) at room temperature. By depositing specific amounts of indium atoms while heating the Si(1 1 1)-(7 × 7) substrate at a critical temperature, the single phase of Si(1 1 1)-(√31 × √31)-In surfaces could be routinely obtained over the whole surface with large domains. This procedure is certified by our high-resolution STM images in the range of 5-700 nm. Besides, the high resolution STM images of the Si(1 1 1)-(√31 × √31)-In surface were also presented.  相似文献   

19.
X-ray absorption near-edge spectroscopy (XANES) is used to study the N environment in bulk GaN and in GaNyAs1−y epilayers on GaAs (0 0 1), for y∼5%. Density-functional optimized structures were used to predict XANES via multiple-scattering theory. We obtain striking agreement for pure GaN. An alloy model with nitrogen pairs on Ga accurately predicts the threshold energy, the width of the XANES ‘white line’, and features above threshold, for the given X-ray polarization. The presence of large quantitities of N-pairs may point to a role for molecular N2 in epitaxial growth kinetics.  相似文献   

20.
Diffusion of Cu atoms on a strained Cu (1 1 1) surface was studied by molecular dynamic simulation using an EAM potential. The anisotropic diffusion behaviour is found when the uniaxial strain is imposed on the surface, which does not exist under the biaxial strain. The migration of the adatom is suppressed along the tensile strain direction. The results suggest that different island morphology can be obtained by controlling anisotropic diffusion of adatoms on the strained surfaces during film growth.  相似文献   

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