Enhancement of carrier mobility in pentacene thin-film transistor on SiO2 by controlling the initial film growth modes

Pentacene thin-film transistors (TFTs) were fabricated on thermally grown SiO₂ gate insulator under the conditions of various pre-cleaning treatments. Initial nucleation and growth of the material films on treated substrates were observed by atomic force microscope. The performance of fabricated TFT devices with different surface cleaning approaches was found to be highly related to the initial film morphologies. In contrast to the three-dimensional island-like growth mode on SiO₂ under an organic cleaning process, a layer-by-layer initial growth occurred on the SiO₂ insulator cleaned with ammonia solution, which was believed to be the origination of the excellent electrical properties of the TFT device. Field effect mobility of the TFT device could achieve as high as 1.0 cm²/Vs on the bared SiO₂/Si substrate and the on/off ratio was over 10⁶.     

Comparative photoemission study of the electronic properties of L-CVD SnO2 thin films

In this work we present the results of comparative XPS and PYS studies of electronic properties of the space charge layer of the L-CVD SnO₂ thin films after air exposure and subsequent UHV annealing at 400 °C, with a special emphasis on the interface Fermi level position.From the centre of gravity of binding energy of the main XPS Sn 3d_5/2 line the interface Fermi level position E_F − E_v in the band gap has been determined. It was in a good correlation with the value estimated from the offset of valence band region of the XPS spectrum, as well as from the photoemission yield spectroscopy (PYS) measurements. Moreover, from the valence band region of the XPS spectrum and PYS spectrum two different types of filled electronic band gap states of the L-CVD SnO₂ thin films have been derived, located at 6 and 3 eV with respect to the Fermi level.     

Atomic orbitals and photoelectron intensity angular distribution patterns of MoS2 valence band

The ratio of atomic orbitals contributing to the valence band can be determined from the photoelectron intensity angular distribution (PIAD) by using linearly polarized light and display-type spherical mirror analyzer. The experiment was done for MoS₂ using a linearly polarized light at the photon energy of 45 eV perpendicularly incident to the sample surface. Atomic orbitals contributing to the bands near the Fermi level were investigated. The PIAD patterns around the Γ point showed splitting of intensity. The intensity at the top and bottom K points was strong, while the intensity was weak at the left and right side K points. The PIAD patterns from various kinds of atomic orbitals were calculated. By comparing the experimental PIAD patterns to the simulated ones, we concluded that at the Γ point Mo 4d_z2 and S 3p_z atomic orbitals are the main components and at the K points the Mo 4d_xy atomic orbital is dominant. The atomic orbital Mo 4d_x2−y2 also gives contribution to the PIAD pattern. These results were in good agreement with the coefficients of the atomic orbitals derived using ab initio band calculation.     

Low energy Ar-ion bombardment effects on the CeO2 surface

The structure and electronic properties of epitaxial grown CeO₂(1 1 1) thin films before and after Ar⁺ bombardment have been comprehensively studied with synchrotron radiation photoemission spectroscopy (SRPES). Ar⁺ bombardment of the surface causes a new emission appearing at 1.6 eV above the Fermi edge which is related to the localized Ce 4f¹ orbital in the reduced oxidation state Ce³⁺. Under the condition of the energy of Ar ions being 1 keV and a constant current density of 0.5 μA/cm², the intensity of the reduced state Ce³⁺ increases with increasing time of sputtering and reaches a constant value after 15 min sputtering, which corresponds to the surface being exposed to 2.8 × 10¹⁵ ions/cm². The reduction of CeO₂ is attributed to a preferential sputtering of oxygen from the surface. As a result, Ar⁺ bombardment leads to a gradual buildup of an, approximately 0.69 nm thick, sputtering altered layer. Our studies have demonstrated that Ar⁺ bombardment is an effective method for reducing CeO₂ to CeO_2−x and the degree of the reduction is related to the energy and amount of Ar ions been exposed to the CeO₂ surface.     

Surface electronic state on stepped Cu(755) studied by angle-resolved ultraviolet photoelectron spectroscopy using synchrotron radiation

The surface electronic state on the stepped surface of Cu(755) has been investigated by means of angle-resolved ultraviolet photoelectron spectroscopy using synchrotron radiation(SR-ARUPS). We have observed a free-electron-like surface state below the Fermi level. In spite of the anisotropy of the atomic arrangement due to steps, the surface state is shown to be isotropic since the dispersion profile and the peak shape are almost identical in the directions parallel and perpendicular to the steps. This result makes a clear contrast with the previous SR-ARUPS results on Ni(755) surfaces which have the surface structure similar to Cu(755). Those experimental evidences are discussed based upon the electron configurations of both metal substrates.     

Electronic and magnetic phase transitions in (Sm0.65Sr0.35)MnO3 induced by temperature and magnetic field

Temperature (4.2–260 K) and magnetic field (0–50 kOe) dependencies of the DC electrical resistance, DC magnetization, and AC magnetic susceptibility of (Sm_0.65Sr_0.35)MnO₃ prepared from high purity components have been studied. (Sm_0.65Sr_0.35)MnO₃ undergoes a temperature-induced transition between low-temperature ferromagnetic metallic and high-temperature paramagnetic insulating-like states. A magnetic field strongly affects this transition resulting in a metallic state and “colossal” magnetoresistance in the vicinity of the metal↔insulator transition. Magnetic and electric properties of (Sm_0.65Sr_0.35)MnO₃ are different compared to those reported earlier for similar composition, which is attributable to the purity of the starting materials and/or different process of synthesis. The character of phase transformations observed in (Sm_0.65Sr_0.35)MnO₃ is compared to that reported for Gd₅(Si_xGe_4−x) intermetallic alloys with a true first order phase transition.     

Electrical conductivity and complex impedance analysis of 20% Ti-doped La0.7Sr0.3MnO3 perovskite

The electrical conductance of 20% Ti-doped La_0.7Sr_0.3MnO₃ (LSMO) was measured using admittance spectroscopy over a wide temperature and frequency ranges. The impedance plane plot shows semicircle arcs at different temperatures and an electrical equivalent circuit has been proposed to explain the impedance results. Activation energy inferred from conductance spectrum matches very well with the value estimated from relaxation time indicating that relaxation process and conductivity have the same origin. The electrical conductance of La_0.7Sr_0.3Mn_0.8Ti_0.2O₃ is found to be dependent on temperature and frequency. Also, the electronic conduction appears to be dominated by thermally activated hopping of small polaron (SPH) at high temperatures and by variable range hopping (VRH) at low temperatures.     

Thickness-dependent surface morphology of La0.9Sr0.1MnO3 ultrathin films

La_0.9Sr_0.1MnO₃ (LSMO) ultrathin films with various thickness (in the range of 5-50 unit cells) are grown on (0 0 1) substrates of the single-crystal SrTi_0.99Nb_0.01O₃ by laser molecular-beam epitaxy (laser-MBE), and the surface morphology of these films were measured by scanning tunneling microscopy (STM). STM images of LSMO ultrathin film surface reveal that surface morphology becomes more flat with increasing film thickness. This study highlights the important effect of strain caused by the lattice mismatch between substrates and ultrathin films. And the results should be useful to the investigations on growing manganite perovskite materials.     

Metastable states in phase separated electron doped Sm0.15Ca0.85MnO3

In order to study the mechanism behind the phase separation scenario in the Sm_0.15Ca_0.85MnO₃ compound, magnetization and resistivity measurements have been carried out in pulsed magnetic fields up to 50 T at temperatures 4.2 K<T<200 K. It is found that external magnetic field causes a collapse of a C-type AFM (P2₁/m) phase resulting in field-induced insulator-metal transition, which is irreversible below T₁=75 K. In zero field the content of a G-type phase in the mixed C-G state can vary from 10 to 17% at T=10 K. A set of metastable states with different volume ratios of G-type to C-type phases is observed below T₁ depending on the history of the sample. The obtained results indicate that the phase separation plays a dominant role for the electric and the magnetic properties of this material.     

Electrical properties of neodymium doped CaBi4Ti4O15 ceramics

Neodymium doped bismuth layer structure ferroelectrics (BLSFs) ceramics CaBi_4−xNd_xTi₄O₁₅ (x=0, 0.25, 0.50, 0.75) were prepared by solid-state reaction method. X-ray diffraction pattern showed that single phase was formed when x=0-0.75. The refined lattice parameters showed that a (b) axes decrease at x=0.25 and increase with more Nd³⁺ dopant. The effects of Nd³⁺ doping on the dielectric and ferroelectric properties of CaBi₄Ti₄O₁₅ ceramics are studied. Nd³⁺ dopant decreased the Curie temperature linearly, and the dielectric loss, tan δ, as well. The remnant polarization of Nd³⁺ doped CaBi₄Ti₄O₁₅ ceramics was increased by 80% at x=0.25, while more Nd³⁺ dopant decreased the remnant polarization. CaBi_3.75Nd_0.25Ti₄O₁₅ ceramics had the largest piezoelectric constant d₃₃. The structure and properties of CaBi_4−xNd_xTi₄O₁₅ ceramics showed that Nd³⁺ may occupy different crystal locations when Nd³⁺ content x is less than 0.25 and more than 0.50.     

The effect of cation doping on spinel LiMn2O4: a first-principles investigation

The effect of the cation doping on the electronic structure of spinel LiM_yMn_2−yO₄ (M=Cr, Mn, Fe, Co and Ni) has been calculated by first-principles. Our calculation shows that new M-3d bands emerge in the density of states compared with that in LiMn₂O₄. Simultaneously, the new O-2p bands appear accordingly in almost the same energy range around the Fermi energy owing to the M-3d/O-2p interaction. It is found that the appearance of new O-2p bands in the lower energy position results in a higher intercalation voltage. Consequently, the origin of higher intercalation voltage in LiM_yMn_2−yO₄ can be ascribed to the lower O-2p level introduced by the doping cation M.     

Electrical screening of ternary NiO-Mn2O3-Co3O4 composition spreads

The compositional optimization of infrared-transparent conducting oxides was performed using high throughput screening of combinatorial libraries. Complete ternary composition spreads of NiO-Mn₂O₃-Co₃O₄ alloys were deposited onto conducting Nb-doped SrTiO₃ substrates using the pulsed laser deposition technique. Resistance-temperature relations of each composition in the spread were determined using a custom-designed scanning probe. The binary NiCo₂O₄ oxide showed the lowest electrical resistivity of about 0.1 Ω cm but unacceptably large resistance-temperature dependence (3.5%/°C). Electrically conducting ternary alloys along the line Mn_0.45Ni_0.63Co_1.92O₄-Mn_0.60Ni_0.72Co_1.68O₄-Mn_0.69Ni_0.81Co_1.50O₄ exhibited much lower temperature sensitivity (of about 1.5%/°C) as well as electrical resistance comparable to that of NiCo₂O₄. From this screening we propose new compounds for the thin-film ITCO sensors.     

Electronic structure of AgNbO3 and NaNbO3 studied by X-ray photoelectron spectroscopy

The XPS examinations of the AgNbO₃ and NaNbO₃ single crystals and ceramics allowed estimate their average composition as Ag_1.1Nb_0.9O₃ and Na_1.2Nb_0.9O_2.9. The valence bands of the AgNbO₃ compound, formed mainly of the Nb 4d, Ag 4d and O 2p states, show an energy gap about 3 eV while for the NaNbO₃ compound consist of the O 2p states hybridized with the Nb 3d states and show an energy gap about 4 eV. The chemical shifts of these compounds suggest a mixed ionic and covalent character of the bonds. The broadening of the core level lines of AgNbO₃ suggests a stronger structural disorder in comparison with NaNbO₃ compound.     

Band bending and band alignment at HfO2/HfSixOy/Si interfaces

Band bending and band alignment at HfO₂/SiO₂/Si and HfO₂/Hf/SiO₂/Si interfaces were investigated using X-ray photoelectron spectroscopy. After Hf-metal pre-deposition, a 0.55 eV band bending in Si and a 1.80 eV binding energy decrease for Hf 4f and O 1s of HfO₂ were observed. This was attributed to the introduction of negative space charges at interface by Hf pre-deposition. Band bending decrease and synchronous binding energy increases of O 1s and Hf 4f for HfO₂ were observed during initial Ar⁺ sputtering of the Hf pre-deposited sample. This was interpreted through the neutralization of negative space charges by sputtering-induced oxygen vacancies.     

Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact

In this investigation, an operating voltage as low as 5 V has been achieved for Oxide TFT with Y₂O₃ as a gate oxide and a-IGZO as an active layer. The OTFT has been fabricated at room temperature using RF sputter. The mobility and threshold voltages are 11.3 cm²/V s and 3.4 V for the device with W/L = 0.8, respectively. The annealing at 400 °C in N₂ containing 5% H₂ ambient has been utilized to improve the electrical performance of TFT. The on-off current which is determined by gate dielectric has been observed to be 10⁴. It has also been observed that the dielectric properties of gate oxide deteriorate on annealing. The dielectric constant of Y₂O₃ is observed in the range between 5.1 and 5.4 measured on various devices.     

Inverse photoemission spectroscopy of the unoccupied electronic structure of Na/Cu(110)

The unoccupied electronic states of Na thin films on a Cu(110) substrate have been measured by inverse photoemission spectroscopy (IPES). The IPES spectrum provides the intensity of the unoccupied states, which decreases with increasing Na coverage at off-normal incidence of the electron beam. The IPES spectra at 17 and 19 eV incident electron energies show a shift towards the Fermi level with increasing Na coverage for the peak at ∼7.8 eV.     

Crystallization-dependent magnetic properties of Mn1.56Co0.96Ni0.48O4 thin films

The effects of magnetic property dependence of the Mn_1.56Co_0.96Ni_0.48O₄ (MCN) films on crystallization are investigated in the growth temperature of 450-750 °C. With the growth temperature increase, both the crystalline quality and the grain size improve. The MCN films exhibit paramagnetic to ferromagnetic transition and the paramagnetic parts fit to the modified Curie-Weiss law. The ferromagnetic couplings of the magnetic ions in the MCN films enhance at elevated growth temperature. The saturation magnetization at 5 K increases with increasing growth temperature, but coercive field decreases monotonously. The magnetic properties of the MCN films strongly depend on their microstructures.     

Strained-Si with carbon incorporation for MOSFET source/drain engineering

The carbon incorporation in strained-Si source/drain of MOSFET is demonstrated. The methylsilane (CH₃SiH₃) is chosen as the carbon precursor to make high percentage of substitutional carbon, and less defects by interstitials and vacancies. The large D_it at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si source/drain with carbon incorporation is not only being stressor but also lower R_s, and make a potential candidate for future high-speed ballistic devices beyond 10 nm technology node.     

Switching phenomenon and optical properties of Se85Te10Bi5 films

Se₈₅Te₁₀Bi₅ films of different thicknesses ranging from 126 to 512 nm have been prepared. Energy-dispersive X-ray (EDX) spectroscopy technique showed that films are nearly stoichiometric. X-ray diffraction (XRD) measurements have showed that the Se₈₅Te₁₀Bi₅ films were amorphous. Electrical conduction activation energy (ΔE_σ) for the obtained films is found to be 0.662 eV independent of thickness in the investigated range. Investigation of the current voltage (I-V) characteristics in amorphous Se₈₅Te₁₀Bi₅ films reveals that it is typical for a memory switch. The switching voltage V_th increases with the increase of the thickness and decreases exponentially with temperature in the range from 298 to 383 K. The switching voltage activation energy (ε) calculated from the temperature dependence of V_th is found to be 0.325 eV. The switching phenomenon in amorphous Se₈₅Te₁₀Bi₅ films is explained according to an electrothermal model for the switching process. The optical constants, the refractive index (n) and the absorption index (k) have been determined from transmittance (T) and reflectance (R) of Se₈₅Te₁₀Bi₅ films. Allowed non-direct transitions with an optical energy gap (E_g^opt) of 1.33 eV have been obtained. ΔE_σ is almost half the obtained value of E_g^opt, which suggested band to band conduction as indicated by Davis and Mott.     

Physical properties of double perovskite compounds ALaVMoO6 (A=Ca, Sr, Ba)—a possible half-metallic antiferromagnetic system

Double perovskite compounds ALaVMoO₆ (A=Ca, Sr, Ba) have been synthesized and their electrical and magnetic properties have been investigated. Magnetization measurements have indicated the possible antiferromagnetic transitions at 120 and 130 K for A=Ca and Sr samples, respectively. Electrical resistivity ρ for this system shows metallic temperature dependence from 300 to 20 K, though the sample with A=Ca shows weak semiconducting behavior in the low temperature region (<70 K). Considering the magnetic and electrical properties and assuming the V³⁺S=1 and Mo⁴⁺S=1 valence and spin states, the samples with A=Ca and Sr can be promising candidates for half-metallic antiferromagnets.