Comparative interaction mechanisms for different laser systems with selected materials on titanium alloys

This paper describes further research into, and modelling of, the interaction mechanisms of various laser types with materials, including synthetic oil and silicone grease. A Q-switched Nd:YAG pulsed laser, a CW CO₂ laser, and a pulsed KrF excimer laser (λ = 248 nm) were used in the study. In general, the materials studied were very absorptive in the ultraviolet, less absorptive in the infrared, and least absorptive in the near-infrared. For the excimer, photo-ablation takes place, while for the other two wavelengths thermal vapourization dominates. In the case of silicone grease, full volatilization is only obtained using the excimer. For the other two wavelengths, this is not the case, with a sticky residue remaining after treatment. Interaction with synthetic oil with its lower boiling point can be obtained for all three laser types. With the Nd:YAG the dominant heating mechanism is conduction from the substrate and a baking effect is observed with strong interaction between the contaminant and the substrate. For the two pulsed lasers, oxidation is substantially less, while for the continuous wave CO₂, the interaction time is sufficiently long for oxidation and secondary reactions to take place if care is not taken to work below the reaction threshold.     

Line patterning with large refractive index changes in the deep inside of glass by nanosecond pulsed YAG laser irradiation

Nanosecond (∼100 ns) pulsed (10 Hz) Nd:YAG laser operating at the wavelength (λ) of 1064 nm with pulse energies of 0.16-1.24 mJ/cm² has irradiated 10Sm₂O₃·40BaO·50B₂O₃ glass. It is demonstrated for the first time that the structural modification resulting the large decease (∼3.5%) in the refractive index is induced by the irradiation of YAG laser with λ=1064 nm. The lines with refractive index changes are written in the deep inside of 100-1000 μm depths by scanning laser. The line width is 1-13 μm, depending on laser pulse energy and focused beam position. It is proposed that the samarium atom heat processing is a novel technique for inducing structural modification (refractive index change) in the deep interior of glass.     

Pulsed infrared radiation transmission through chalcogenide glass fibers

Two different kinds of chalcogenide glass IR fibers were evaluated relative to transmission of pulsed IR radiation produced by several laser sources in the wavelength range from 1 to 10 μm. Fibers composed either from As-Se-Te or from As₂S₃ glass, of 250, 500, 750 and 1000 μm and 250, 750 and 1000 μm core diameters were studied, respectively. Attenuation measurements were obtained as a function of the laser energy input and as a function of curvature, wherever this was possible. The output beam quality was also studied using a beam profiler. The lasers used were a Q-switched Nd:YAG laser, emitting at 1.06 μm, a free-running or Q-switched Er:YAG laser emitting at 2.94 μm and a tunable pulsed CO₂ laser emitting in the range of 9.3-10.6 μm. The fibers exhibited better behavior when tested with the Er:YAG laser and they were found fragile in pulsed radiation from the Nd:YAG and the CO₂ laser. The output beam profiles generally showed a central multi-spiking energy distribution.     

Particulate assisted growth of ZnO nanorods and microrods by pulsed laser deposition

Zinc oxide (ZnO) thin films were deposited on the gallium nitride (GaN) and sapphire (Al₂O₃) substrates by pulsed laser deposition (PLD) without using any metal catalyst. The experiment was carried out at three different laser wavelengths of Nd:YAG laser (λ = 1064 nm, λ = 532 nm) and KrF excimer laser (λ = 248 nm). The ZnO films grown at λ = 532 nm revealed the presence of ZnO nanorods and microrods. The diameter of the rods varies from 250 nm to 2 μm and the length varies between 9 and 22 μm. The scanning electron microscopy (SEM) images of the rods revealed the absence of frozen balls at the tip of the ZnO rods. The growth of ZnO rods has been explained by vapor-solid (V-S) mechanism. The origin of growth of ZnO rods has been attributed to the ejection of micrometric and sub-micrometric sized particulates from the ZnO target. The ZnO films grown at λ = 1064 nm and λ = 248 nm do not show the rod like morphology. X-ray photoelectron spectroscopy (XPS) has not shown the presence of any impurity except zinc and oxygen.     

Temperature phase-matching properties of mixed chalcopyrite AgGa1−xInxS2 crystal

AgGa_1−xIn_xS₂ with x = 0.14 ± 0.01 was found to be 90° phase-matchable for the second harmonic generation (SHG) of CO₂ laser radiation at 10.591 μm at 203 °C. In addition, temperature-tuned 90° phase-matched difference frequency generation (DFG) at 4.02 μm was demonstrated by mixing the idler output of a Nd:YAG third harmonic pumped β-BBO optical parametric oscillator and its fundamental source at 1.0642 μm. The Sellmeier and thermo-optic dispersion formulas that reproduce well these experimental data are presented.     

Laser-assisted synthesis of semiconductor chromium disilicide films

Different photo-assisted techniques were employed for chromium disilicide (CrSi₂) semiconductor film fabrication. Flash evaporation of CrSi₂ powder on the Si substrate heated to ∼740 K leads to the formation (according to XRD study) of amorphous films. Post-annealing at 920 K leads to the formation of polycrystalline CrSi₂ phase. Crystallization is improved by further annealing with 1500 Q-Switched Nd:YAG laser pulses. Optical properties of the as deposited and annealed CrSi₂ films have been investigated in the 240-1100 nm spectral range by using spectroscopic ellipsometry. The formation of CrSi₂ semiconductor phase was additionally confirmed by the temperature dependence of electrical resistance of the films treated by Q-switched Nd:YAG laser. The band gap for intrinsic conductivity results E_g ≅ 0.2 eV. Backward laser-induced film transfer (LIFT) was also used for CrSi₂ film deposition from bulk material on Si substrates. Pulsed CO₂ laser was employed for this purpose, because of transparency of silicon at the 10.6 μm wavelength. Measurements of the electrical resistance of the deposited films as a function of temperature showed their semiconductor behavior (E_g = 6 × 10⁻⁴ eV). Chromium disilicide films were also deposited by congruent pulsed laser ablation deposition on Si substrates either at room temperature or heated to about 740 K. In this last case the deposit exhibits semiconducting properties with E_g ≅ 0.18 eV.     

Plasma plume photography and spectroscopy of Fe—Oxide materials

Time-resolved photography was employed to study plasma dynamics and particle ejection of laser-irradiated iron oxide materials. Nano-particle powder, pressed powder pellets and sintered ceramics were ablated in air and Ar gas background by means of short laser pulses (Nd:YAG laser wavelength λ = 1064 nm and pulse duration τ_L ≈ 6 ns; KrF laser λ = 248 nm and τ_L ≈ 20 ns). Plasma plume dynamics significantly depended on sample morphology. The ejection of non-luminous particles up to several hundreds of microseconds after the laser pulse was observed for powder and pressed powder target materials. Laser-induced breakdown spectroscopy (LIBS) was employed for element analysis of iron oxide powders, pressed pellets and sintered ceramics. LIBS spectra of the different targets were comparable to each other and qualitatively independent of target morphology.     

High power room-temperature design of terahertz quantum cascade laser based on difference frequency generation

Terahertz (THz) quantum cascade lasers (QCLs) are key elements for high-power terahertz beam generation for integrated applications. In this study, we design a highly nonlinear THz-QCL active region in order to increase the output power of the device especially at lower THz frequencies based on difference frequency generation (DFG) process. It has been shown that the output power increases for a 3.2 THz structure up to 1.2 μW at room temperature in comparison with the reported power of P = 0.3 μW in [1]. The mid-IR wavelengths associated with this laser are λ₁ = 12.12 μm and λ₂ = 13.93 μm, which are mixed in a medium with high second-order nonlinearity. A similar approach has been used to design an active region with THz frequency of 1.8 THz. The output power of this structure reaches to 1 μW at room temperature where the mid-IR wavelengths are λ₁ = 12.05 μm, λ₂ = 12.99 μm.     

High-beam-quality, 5.1 J, 108 Hz diode-pumped Nd:YAG rod oscillator-amplifier laser system

A high efficiency, high beam quality diode-pumped Nd:YAG master oscillator power-amplifier (MOPA) laser with six amplifier stages is demonstrated. The oscillator with two-rod birefringence compensation was designed as a thermally determined near hemispherical resonator, which presents a pulse energy of 223 mJ with a beam quality value of M² = 1.29 at a repetition rate of 108 Hz. The MOPA system delivers a pulse energy of 5.1 J with a pulse width of 230 μs, a M² factor of 3.6 and an optical-to-optical efficiency of 38.5%. To the best of our knowledge, this is the highest pulse energy for a diode-pumped Nd:YAG rod laser operation with a high beam quality and a pulse width of hundreds of microseconds at a repetition rate of over 100 Hz.     

Optical fiber cleaved at an angle by CO2 laser ablation: Application to micromachining

Laser ablation can be achieved by delivering short power pulse with durations much smaller than the heat diffusion time. In this investigation, we are collimating and magnifying a beam from a CO₂ laser with a Keplerian telescopic system. Then we study the quality of the cut performed by scanning the beam at a fast speed over an optical fiber just after focusing a well collimated CO₂ beam at λ=10.6 μm. It is found that the best results for cutting optical fibers depend upon both the time required in raising matter temperature to the vaporization point and the scanning speed of the CO₂ laser beam. Some aspects of the laser beam collimation before focusing is reviewed briefly and results for optical fibers being cleaved at low and fast speed under various conditions are also shown and discussed.     

Nanosecond and femtosecond laser spectroscopy of molecules of biological interest

This paper mainly concerns on nanosecond and femtosecond laser spectroscopy of aromatic organic compounds as neurotransmitters, and plume diagnostics of the ablated species, in order to characterize the plasma dynamics, i.e. the temporal and spatial evolution of the plume. Optical emission spectroscopy has been applied to characterize the transient species produced in the femtosecond (fs) and nanosecond (ns) regimes. The laser sources employed for optical emission spectroscopy are a frequency-doubled Nd:YAG Handy (λ = 532 nm, τ = 5 ns) and a frequency-doubled Nd:glass (λ = 527 nm, τ = 250 fs). These studies aim to detect and give information on the photoexcitation and photodissociation of these biological molecules and to compare the plasma characteristics in the two ablation regimes.     

Nanoimprint lithography using IR laser irradiation

A new technique called “infrared laser-assisted nanoimprint lithography” was utilised to soften the thermoplastic polymer material mR-I 8020 during nanoimprint lithography. A laser setup and a sample holder with pressure and temperature control were designed for the imprint experiments. The polymer was spin coated onto crystalline Si <1 1 1> substrates. A prepatterned Si <1 1 1> substrate, which is transparent for the CO₂ laser irradiation, was used as an imprint stamp as well. It was shown, that the thermoplastic resist mR-I 8020 could be successfully imprinted using the infrared CW CO₂ laser irradiation (λ = 10.6 μm). The etching rate of the CO₂ laser beam irradiated mR-I 8020 resist film under O₂ RF (13.56 MHz) plasma treatment and during O₂ reactive ion beam etching was investigated as well.     

Hologram multiplexing in acrylamide hydrophilic photopolymers

Unslanted diffraction gratings are recorded in a 900 μm thick acrylamide photopolymer by means of peristrophic multiplexing. A solid state Nd:YAG (λ = 532 nm) laser is used as the recording beam, with a total incident intensity of 5 mW/cm², and a He-Ne laser as the reconstruction beam. The dye concentration in the photopolymer is optimized so that it does not limit the dynamic range. Nine holograms are recorded using constant exposure time scheduling and variable exposure time scheduling. From the results obtained it may be deduced that optimization of the dye allows us to work in the linear response region of the photopolymer and at the same time obtain high values of diffraction efficiency for each hologram. An exponential increase in exposure time as the number of holograms increases enables the values of diffraction efficiency to be homogenized with regard to the case of constant exposure scheduling. In this way, better use is made of the dynamic range of acrylamide hydrophilic photopolymer.     

Fabrication of 550 nm gratings in fused silica by laser induced backside wet etching technique

A series of 550 nm spacing gratings were fabricated in fused silica by laser induced backside wet etching (LIBWE) method using the fourth harmonic of a Q-switched Nd:YAG laser (wavelength: λ = 266 nm; pulse duration: FWHM = 10 ns). During these experiments we used a traditional two-beam interference method: the spatially filtered laser beam was split into two parts, which were interfered at a certain incident angle (2θ = 28°) on the backside surface of the fused silica plate contacting with the liquid absorber (saturated solution of naphthalene-methyl-methacrylate c = 1.85 mol/dm³). We studied the dependence of the quality and the modulation depth of the prepared gratings on the applied laser fluence and the number of laser pulses. The surface of the etched gratings was characterized by atomic force microscope (AFM). The maximum modulation depth was found to be 180-200 nm. Our results proved that the LIBWE procedure is suitable for production of submicrometer sized structures in transparent materials.     

Picosecond laser amplification system with 93 W high average power

A high average power picosecond laser amplification system with diode-end-pumped Nd:YVO₄ and diode-side-pumped Nd:YAG is described. Laser with power up to 92.7 W, repetition frequency of 73.3 MHz, pulse duration of 26.5 ps, and beam quality of M² < 3.5 is generated in the amplification system. Thermal-birefringence-induced depolarization in the Nd:YAG rod laser head amplifier is measured to be 21.9 W though birefringence compensation is performed.     

Optical and nonlinear optical characteristics of the Ge and GaAs nanoparticle suspensions prepared by laser ablation

The laser ablation of Ge and GaAs targets placed in water and ethanol was carried out using the fundamental radiation of nanosecond Nd:YLF laser. The results of preparation and the optical and nonlinear optical characterization of the Ge and GaAs nanoparticle suspensions are presented. The considerable shift of the band gap energy of the nanoparticles compared to the bulk semiconductors was observed. The distribution of nanoparticle sizes was estimated in the range of 1.5-10 nm on the basis of the TEM and spectral measurements. The nonlinear refractive indices and nonlinear absorption coefficients of Ge and GaAs nanoparticles were defined by the z-scan technique using second harmonic radiation of picosecond Nd:YAG laser (λ = 532 nm).     

Removal of graffiti from the mortar by using Q-switched Nd:YAG laser

This paper presents part of the larger study on microstructural features of mortars and it's effects on laser cleaning process. It focuses on the influence of surface roughness, porosity and moisture content of mortars on the removal of graffiti by Nd:YAG laser. The properties of this laser are as follows: wavelength (λ) 1.06 μm, energy: 500 mJ per pulse, pulse duration: 10 ns. The investigation shows that the variation of laser fluence with the number of pulses required for the laser cleaning can be divided into two zones, namely effective zone and ineffective zone. There is a linear relationship observed between number of pulses required for laser cleaning and the laser fluence in the effective zone, while the number of pulses required for the laser cleaning is almost constant even though the laser fluence increases in the ineffective zone. Moreover, surface roughness, porosity and moisture content of mortar samples have influence on the laser cleaning process. The effect of these parameters become however negligible at the high level of laser fluence. The number of pulses required for the laser cleaning is low for smooth surface or less porous mortar. Furthermore, the wetness of the samples facilitates the cleaning process.     

QCW diode-pumped 654 W AO Q-switched Nd:YAG rod oscillator-amplifier laser

A diode laser-pumped acoustic-optic Q-switched Nd:YAG master-oscillator power amplifier laser is presented. The laser is quasi continuously pumped at 1.1 kHz with a pulse width of 172 μs, and the ultrasonic frequency of the AO Q-switcher is set at a higher value (53 kHz). The master oscillator is designed as a thermally near-unstable-resonator, which presents an average output power of 48 W with a beam quality value of M² = 1.41 and a Q-switching pulse duration of 121 ns. The maximum average power of the MOPA system is 654 W, and the beam quality is M² = 6.     

43 W picosecond laser and second-harmonic generation experiment

Combining the advantages of diode-end-pumped Nd: YVO₄ and diode-side-pumped Nd: YAG amplifiers, a high average power and high beam quality picosecond laser is designed. The system delivers a picosecond laser with average power of 43.4 W and good beam quality of M² < 1.7. By focusing the high power picosecond laser in LBO crystal, 532 nm green laser with maximal power of 20.8 W is generated and the conversion efficiency of second-harmonic generation reaches 56.4% when 17.7 W green laser obtained from the fundamental frequency laser with power of 31.4 W and beam quality of M² < 1.25.     

High-efficiency continuous-wave and Q-switched diode-end-pumped multi-wavelength Nd:YAG lasers

We demonstrate high-efficiency diode-end-pumped multi-wavelength Nd:YAG lasers for continuous-wave and Q-switched operation. For the continuous-wave case, the Nd:YAG laser oscillates at 1.06 and 1.3 μm simultaneously; the maximum output power of 2.0 W (M² = 1.3) and 3.6 W (M² = 1.8) have been achieved at the incident pump power of 20.3 W, with the respective average slope efficiencies of 12.0% and 21.4%, for the lines of 1.06 and 1.3 μm, respectively. For the Q-switched operation, we achieve the average output power of 1.3 W (M² = 2.7) at 1.06 μm and 2.0 W (M² = 3.0) at 1.3 μm with the corresponding peak power of 10.2 and 4.2 kW under an incident pump power of 20.3 W.