Sapphire (0 0 0 1) surface modifications induced by long-pulse 1054 nm laser irradiation

We have investigated modifications of sapphire (0 0 0 1) surface with and without coating, induced by a single laser pulse with a 1054 nm wavelength, 2.2 s duration, 7.75 mm spot and energy of 20-110 J. A holographic optical element was used for smoothing the drive beam spatially, but it induced small hotspots which initiated damage on the uncoated and coated surfaces. The individual damage effects of hotspots became less pronounced at high fluences. Due to high temperature and elevated non-hydrostatic stresses upon laser irradiation, damage occurred as fracture, spallation, basal and rhombohedral twinning, melting, vitrification, the formation of nanocrystalline phases, and solid-solid phase transition. The extent of damage increased with laser fluences. The formation of regular linear patterns with three-fold symmetry ( directions) upon fracture was due to rhombohedral twinning. Nanocrystalline -Al₂O₃ formed possibly from vapor deposition on the coated surface and manifested linear, triangular and spiral growth patterns. Glass and minor amounts of -Al₂O₃ also formed from rapid quenching of the melt on this side. The - to -Al₂O₃ transition was observed on the uncoated surface in some partially spalled alumina, presumably caused by shearing. The nominal threshold for laser-induced damage is about 47 J cm⁻² for these laser pulses, and it is about 94 J cm⁻² at the hotspots.     

Morphology and composition on Al surface irradiated by femtosecond laser pulses

We study the surface chemicals and structures of aluminum plates irradiated by scanning femtosecond laser pulses in air for a wide range of laser fluence from 0.38 to 33.6 J/cm². X-ray photoelectron spectroscopy and X-ray diffraction analyses indicate clearly that crystalline anorthic Al(OH)₃ is formed under femtosecond laser pulse irradiation. Besides aluminum hydroxide, crystalline Al₂O₃ is also found in the samples irradiated at high laser fluence. Field emission scanning electron microscopy demonstrates that the surfaces of the samples irradiated with low laser fluence are colloidal-like and that nanoparticles with a few nanometers in size are embedded in glue-like substances. For high laser fluence irradiated samples, the surfaces are highly porous and covered by nanoparticles with uniform size of less than 20 nm.     

Widely tunable high power OPO based on a periodically poled MgO doped lithium niobate crystal

An optical parametric oscillator (OPO) based on a highly MgO doped periodically poled lithium niobate (PPMgLN) crystal was experimentally demonstrated and the result is presented in this report. The PPMgLN wafer was fabricated from a MgO doped (with 6 mol% doping concentration) lithium niobate crystal by means of high voltage pulse trigged domain reversal technique and has 20 domain reversal periods from 27.8 to with a step of between the neighbor periods. An acousto-optic (AO) Q-switched Nd³⁺:YVO₄ laser was used as the pumping laser. A maximum laser output power of 4.8 W has been achieved for the OPO when the pumping power is 10.8 W and it corresponds to an optic-optic conversion efficiency of 44%. By shifting the PPMgLN wafer, the periods of the domain structure on the PPMgLN wafer can be changed, thus enabling a wide spectral tuning range of the laser output from 1.42 to (for the signal light) and from 2.76 to (for the idler light).     

The high quality ZnO growth on c-Al2O3 substrate with Cr2O3 buffer layer using plasma-assisted molecular beam epitaxy

High quality epitaxial ZnO films were grown on c-Al₂O₃ substrates with Cr₂O₃ buffer layer by plasma-assisted molecular beam epitaxy (P-MBE). The hexagonal crystalline Cr₂O₃ layer was formed by oxidation of the Cr-metal layer deposited on the c-Al₂O₃ substrate using oxygen plasma. The epitaxial relationship was determined to be ZnO//Cr₂O₃//Cr//Al₂O₃ and ZnO//Cr₂O₃//[0 0 1]Cr//Al₂O_3. The Cr₂O₃ buffer layer was very effective in improving the surface morphology and crystal quality of the ZnO films. The photoluminescence spectrum showed the strong near band-edge emissions with the weak deep-level emission, which implies high optical quality of the ZnO films grown on the Cr₂O₃ buffer.     

Time-resolved infrared diode laser spectroscopy of the ν1 (C-O stretch) band of the CoCO radical

Infrared spectrum of the cobalt carbonyl radical CoCO produced by the 193 nm excimer laser photolysis of cobalt tricarbonyl nitrosyl Co(CO)₃NO was observed by time-resolved diode laser spectroscopy. More than 600 lines were identified as belonging to the ν₁ (C-O stretch) fundamental band, consisting of the Ω=5/2 and 3/2 subbands, and the associated hot bands , , , and . The ²Δ_i electronic ground state of CoCO was experimentally confirmed. The ν₁ band origins are 1974.172582(93) cm⁻¹ and 1973.53178(14) cm⁻¹ for the Ω=5/2 and 3/2 subbands, respectively. The rotational constant in the ground state was determined as B₀=4427.146(50) MHz. The centrifugal distortion constant D₀=1.1243(68) kHz was obtained for the Ω=5/2 substate of the ground state. The equilibrium rotational constant B_e=4435.44(14) MHz was derived, together with the vibration-rotation interaction constants.     

Sub-Doppler high-resolution excitation spectroscopy of the S1 ← S0 transition of dibenzofuran

Rotationally resolved ultrahigh-resolution fluorescence excitation spectra of the S₁ ← S₀ transition of dibenzofuran have been observed using the technique of crossing a collimated molecular beam and the single-mode UV laser beam. 3291 rotational lines of the band and 3047 rotational lines of the band have been assigned. The band has been found to be a b-type transition, in which the transition moment is along the twofold symmetry axis of this molecule, and only the ΔK_a = ± 1 transitions were observed. The excited state is identified to be the S₁¹A₁(ππ^∗) state. In contrast with this, the band has been found to be an a-type transition in which the transition moment is along the long axis in plane. It indicates that the intensity of this vibronic band arises from vibronic coupling with the S₂¹B₂(ππ^∗) state. We determined the accurate rotational constants and the molecule have been shown to be planar both in the ground and excited states.     

High-contrast all-optical switching with Pt:ethynyl complex

We have theoretically analyzed all-optical switching in Pt:ethynyl complex based on nonlinear excited-state absorption. A detailed analysis for Pt:ethynyl complex has been presented based on rate equation approach. It is shown that a pulsed pump laser beam at 355 nm switches the transmission of a cw probe laser beam at 633 nm through a Pt:ethynyl sample. The effect of various parameters, such as pump pulse width, peak pumping intensity, normalized parameter , transition times of S₁→S₀ and S₁→T₁ states and lifetime of triplet state, on switching characteristics has been analyzed in detail. It has been shown that the probe beam can be completely switched off (i.e. 100% modulation) by a pulsed pump laser beam at 50 kW/cm². These results have been used to design all-optical NOT and the universal NOR and NAND logic gates with multiple pump laser pulses.     

Shape-dependent local internal stress of α-Cr2O3 nanocrystal fabricated by pulsed laser ablation

The α-Cr₂O₃ single-crystal nanocondensates were fabricated by pulsed laser ablation in air and characterized by analytical electron microscopy regarding shape-dependent local internal stress of the anisotropic crystal. The nanocondensates formed predominantly as rhombohedra with well-developed surfaces and occasionally hexagonal plate with thin edges and blunt corners. Such nanocondensates showed Raman shift for the CrO₆ polyhedra, indicating a local compressive stress up to ca. 4 GPa on the average. Careful analysis of the lattice fringes revealed a local compressive stress (0.5% strain) at the thin edge of the hexagonal plates and a local tensile stress (0.3–1.0% strain) near the relaxed , , and (0 0 0 1) surfaces of truncated rhombohedra. The combined effects of nanosize, capillarity force at sharp edge, and specific surface relaxation account for the retention of a local internal compressive stress built up in an anisotropic crystal during a very rapid heating–cooling process.     

High-temperature UV absorption of methyl radicals behind shock waves

The absorption of ultraviolet narrow-line laser radiation by methyl radicals (CH₃) in the electronic system has been studied at high temperatures behind shock waves. Methyl radicals at high temperatures were generated by the shock heating of methyl precursors: azomethane, methyl iodide, and ethane. The spectral shape and intensity of the broadband absorption feature from 211.5 to 220 nm at high temperature (1565 K) has been measured. The absorption coefficient of CH₃ at 216.62 nm, the wavelength of peak absorption at high temperatures in the P+Q band, has been determined from 1200 to 2500 K. Additionally, the absorption coefficients of several interfering UV-absorbing combustion species (, and C₃H₆) have been determined at 216.62 nm.     

Type I quasi-phase-matched blue second harmonic generation with different polarizations in periodically poled LiNbO3

First-order type I quasi-phase-matched (QPM) blue second-harmonic generation was demonstrated in periodically poled LiNbO₃ with period of 14.5 μm using d₃₁. 52 μJ of harmonic blue light at 0.473 μm was generated pumped by 114 μJ 35 ps pulse laser at 0.946 μm at 150 °C with a conversion efficiency of 45.6%. The average conversion efficiencies of 41.3% and 19% were also obtained at 150 °C, respectively, in the conventional first- and third-order QPM blue second-harmonic generation at 0.473 μm. The temperature acceptance bandwidths of 20 mm length periodically poled LiNbO₃ with first-order grating periods of 14.5 and 4.5 μm are 2.0 and 0.9 °C, respectively. The larger acceptance bandwidths and grating period for than those for enhance the frequency conversion efficiency, which shows the polarization dependence of quasi-phase matching.     

Microstructure of epitaxial scandium nitride films grown on silicon

Epitaxial scandium nitride films (225 nm thick) were grown on (1 1 1)-oriented silicon substrates by molecular beam epitaxy (MBE), using ammonia as a reactive nitrogen source. Film microstructure was investigated using X-ray diffraction (XRD). The (1 1 1) ω-scan FWHM of 0.551° obtained for films grown at 850 °C is the lowest reported so far for ScN thin films. The principal orientation of ScN with respect to Si is (1 1 1)_ScN//(1 1 1)_Si and []_ScN//[]_Si, representing a 60° in-plane rotation of the ScN layer with respect to the Si substrate. However, some twinning is also present in the films; the orientation of the twinned component is (1 1 1)_ScN//(1 1 1)_Si and []_ScN//[]_Si, representing a ‘cube-on-cube’ orientation. The volume percentage of these twins in the films decreases with increasing film growth temperature.     

Blue and infrared cathodoluminescence induced by carbon-irradiation in SrTiO3 single crystal

We show that blue-CL can be induced in SrTiO₃ single crystal at room temperature by irradiating it with 60 KeV carbon ion (C⁻) beam. An infrared CL-emission is induced simultaneously. Transmission electron microscopy (TEM) measurement exhibits an 200 nm thick surface layer formed by the C⁻ irradiation. We show that the emitting region can be patterned into any desired shape by fabricating the STO surface using Pt-based micro-lithography technique.     

Synthesis of new La nitrides at high pressure and temperature

We have succeeded in synthesizing two new lanthanum nitrides in a supercritical nitrogen fluid at high pressure (about 30 GPa) and high temperature (about 2000 K), using a diamond anvil cell and a YAG laser heating system. These nitrides were found to be stable down to 5 GPa and ∼300 K in a nitrogen atmosphere. One of the new lanthanum nitrides is a cubic P lattice-type phase, which is a main phase synthesized nitride. The calculated lattice parameter is at 5 GPa, 300 K. The other nitride is of a trigonal P lattice-type. The calculated lattice parameters are and at 5 GPa, 300 K. The most likely phase of the former new La nitride is , the structure of which may be similar to the   Mn₂O₃-type (Ia80). The phase of the latter nitride is , the structure of which is the same as the   La₂O₃-type (hP5).     

Diode laser spectroscopy of CO2 at 790 nm

Absorption lines of ¹²C¹⁶O₂ have been examined by using a tunable diode laser spectrometer in the region around (790 nm). The spectrometer sources are commercially available double heterostructure InGaAlAs tunable diode lasers (TDLs) operating in the “free-running” mode, which allowed the detection of the line positions within . The observed carbon dioxide absorption lines belong to the combination overtone 2ν₂+5ν₃ ro-vibrational band with intensities ranging around .     

Reassignment of the C-Cl stretching frequency in the Ã(A″) state of CBrCl

In a recent theoretical paper, vibrational frequencies were reported for CBrCl in the and à states. These values agree well with our previously published experimental frequencies, except in the case of , where the theoretical value of 968.3 cm⁻¹ is significantly higher than the experimental value of 712.6 cm⁻¹. This discrepancy prompted a re-examination of the assignments for transitions involving ν₁ in the laser induced fluorescence spectrum. If the progression ν₁ + nν₂ has the assignment of n reduced by 1 (the origin is not observed), a new experimental value of results. The close accord with the theoretical value lends weight to this re-assignment. Consequently we propose that the experimental frequency be changed to .     

Thermal and magnetothermal properties of La0.5Pr0.5Mn2Si2

The thermal and magnetothermal properties of La_0.5Pr_0.5Mn₂Si₂ and isostructural LaFe₂Si₂ intermetallic compounds in the temperature range 4.5-303 K are reported with and without applied magnetic field. The electronic, lattice, and magnetic contributions to the heat capacity of La_0.5Pr_0.5Mn₂Si₂ are determined and analyzed. We have determined and from heat capacity experiments; the values are in line with those from the magnetization measurements. We conclude that in order to observe the anomaly in the heat capacity data around in the system, the transition around should occur in a narrow temperature interval.     

Quantum critical behaviour in doped Y bB12 studied by ab initio calculations

The Kondo insulator Y bB₁₂ is known to undergo a transition to the metallic state with doping or under an external magnetic field. Within the virtual crystal approximation (VCA), we calculated the occupation of the Yb 4f and 5d shells, and , as a function of doping of Y bB₁₂ with the rare earths Tm and Lu. We found that exhibits an anomalous change at the critical concentration of the dopant, in agreement with experiment ( for Y b_1−xLu_xB₁₂ and for Y b_1−xTm_xB₁₂). We suggest that the critical behaviour seems to be strictly connected with the change of and in consequence the change of the Yb valency.