Effect of tin-doped indium oxide film as capping layer on the agglomeration of copper film and the appearance of copper silicide

In this work, the effect of tin-doped indium oxide (ITO) film as capping layer on the agglomeration of copper film and the appearance of copper silicide was studied. Both samples of Cu 100 nm/ITO 10 nm/Si and ITO 20 nm/Cu 100 nm/ITO 10 nm/Si were prepared by sputtering deposition. After annealing in a rapid thermal annealing (RTA) furnace at various temperatures for 5 min in vacuum, the samples were characterized by four probe measurement for sheet resistance, X-ray diffraction (XRD) analysis for phase identification, scanning electron microscopy (SEM) for surface morphology and transmission electron microscopy (TEM) for microstructure.The results show that the sample with ITO capping layer is a good diffusion barrier between copper and silicon at least up to 750 °C, which is 100 °C higher than that of the sample without ITO capping layer. The failure temperature of the sample with ITO capping layer is about 800 °C, which is 100 °C higher than that of the sample without ITO capping layer. The ITO capping layer on Cu/ITO/Si can obstacle the agglomeration of copper film and the appearance of Cu₃Si phase.     

Thickness dependence on thermal stability of sputtered Ag nanolayer on Ti/Si(1 0 0)

Thermal stability of Ag layer on Ti coated Si substrate for different thicknesses of the Ag layer have been studied. To do this, after sputter-deposition of a 10 nm Ti buffer layer on the Si(1 0 0) substrate, an Ag layer with different thicknesses (150-5 nm) was sputtered on the buffer layer. Post annealing process of the samples was performed in an N₂ ambient at a flow rate of 200 ml/min in a temperature range from 500 to 700 °C for 30 min. The electrical property of the heat-treated multilayer with the different thicknesses of Ag layer was examined by four-point-probe sheet resistance measurement at the room temperature. Phase formation and crystallographic orientation of the silver layers were studied by θ-2θ X-ray diffraction analysis. The surface topography and morphology of the heat-treated films were determined by atomic force microscopy, and also, scanning electron microscopy. Four-point- probe electrical measurement showed no considerable variation of sheet resistance by reducing the thickness of the annealed Ag films down to 25 nm. Surface roughness of the Ag films with (1 1 1) preferred crystallographic orientation was much smaller than the film thickness, which is a necessary condition for nanometric contact layers. Therefore, we have shown that the Ag layers with suitable nano-thicknesses sputtered on 10 nm Ti buffer layer were thermally stable up to 700 °C.     

Photoemission studies of initial oxidation for ultra-thin zinc film on 6H-SiC(0 0 0 1) surface with synchrotron radiation

The thermal oxidation process of metallic zinc on 6H-SiC(0 0 0 1) surface has been investigated by using atomic force microscopy (AFM), synchrotron radiation photoelectron spectroscopy (SRPES) and XPS methods. The AFM images characterize the surface morphology of ZnO film formed during the thermal oxidation and SRPES record the valence band, Si 2p and Zn 3d spectra at different stages. The O 1s peak is recorded by XPS because of the energy limit of the synchrotron radiation. Our results reveal that the silicon oxides layer of SiC substrate can be reduce by hot metallic zinc atom deposition. The oxygen atoms in the silicon oxides are captured by the zinc atoms to form ZnO_x at the initial stage and as a result, the oxidized SiC surface are deoxidized. After the zinc deposition with the final thickness of 2.5 nm, the sample is exposed in oxygen atmosphere and annealed at different temperatures. According to the evolution of peaks integrated intensities, it is considered that the Zn/SiC system will lose zinc atoms during the annealing in oxygen flux at high temperature due to the low evaporation temperature of pure zinc. After further annealing in oxygen flux at higher temperature, the substrate is also oxidized and finally the interface becomes a stable SiC-SiO_x-ZnO sandwich structure.     

Thermally oxidized aluminum as catalyst-support layer for vertically aligned single-walled carbon nanotube growth using ethanol

Characteristics and role of Al oxide (Al-O) films used as catalyst-support layer for vertical growth of single-walled carbon nanotubes (SWCNTs) were studied. EB-deposited Al films (20 nm) were thermally oxidized at 400 °C (10 min, static air) to produce the most appropriate surface structure of Al-O. Al-O catalyst-support layers were characterized using various analytical measurements, i.e., atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and spectroscopy ellipsometry (SE). The thermally oxidized Al-O has a highly roughened surface, and also has the most suitable surface chemical states compared to other type of Al-O support layers. We suggest that the surface of thermally oxidized Al-O characterized in this work enhanced Co catalyst activity to promote the vertically aligned SWCNT growth.     

Study on effects of substrate temperature on growth and structure of alignment carbon nanotubes in plasma-enhanced hot filament chemical vapor deposition system

Alignment carbon nanotubes (ACNTs) were synthesized on silicon substrate coated with Ni catalyst film and Ta buffer layer by plasma-enhanced hot filament chemical vapor deposition using CH₄, NH₃, and H₂ as the reaction gas, and they were investigated by scanning electron microscopy and transmission electron microscopy. It is found that the diameter of the bamboo-structured ACNTs is increased from 62 to 177 nm when the substrate temperature was changed from 626 to 756 °C. Their growth rate is enhanced by the substrate temperature in a range of 626-683 °C and it is reversely reduced with the substrate temperature after the substrate temperature is over 683 °C. Beginning with wetting phenomenon, the effects of the substrate temperature on the structure and growth rate of the ACNTs are analyzed.     

Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(1 0 0) systems

As metal-oxide-semiconductor field-effect transistor (MOSFET) devices are shrunk to the nanometer scale, flat shallow metal/Si electrical contacts must be formed in the source/drain region. This work demonstrates a method for the formation of epitaxial NiSi₂ layers by a solid-phase reaction in Ni-P(8 nm)/Si(1 0 0) samples. The results show that the sheet resistance remained low when the samples were annealed at temperatures from 400 to 700 °C. P atoms can be regarded as diffusion barriers against the supply of Ni to the Si substrate, which caused the formation of Si-rich silicide (NiSi₂) at low temperature. Furthermore, elemental P formed a stable capping layer with O, Ni and Si during the annealing process. A uniform NiSi₂ layer with an atomically flat interface was formed by annealing at 700 °C because of the formation of a Si-Ni-P-O capping layer and a reduction in the total interface area.     

InAs wetting layer evolution on GaAs(0 0 1)

The evolution of two-dimensional (2D) strained InAs wetting layers on GaAs(0 0 1), grown at different temperatures by molecular beam epitaxy, was studied by in situ high-resolution scanning tunneling microscopy. At low growth temperature (400 °C), the substrate exhibits a well-defined GaAs(0 0 1)-c(4 × 4) structure. For a disorientation of 0.7°, InAs grows in the step-flow mode and forms an unalloyed wetting layer mainly along steps, but also in part on the terrace. The wetting layer displays some local c(4 × 6) reconstruction, for which a model is proposed. 1.2 monolayer (ML) InAs deposition induces the formation of 3D islands. At a higher temperature (460 °C), the wetting layer is obviously alloyed even at low InAs coverage. The critical thickness of the wetting layer for the 2D-to-3D transition is shifted to 1.50 ML in this case presumably since the strain is reduced by alloying.     

Synthesis process of nanowired Al/CuO thermite

Al/CuO nanothermites were fabricated by thermal oxidation of copper layer at 450 °C for 5 h and by aluminum thermal evaporation: thermal evaporation allows producing thin layer less than 2 μm in size. The copper has been deposited by electroplating or thermal evaporation depending on the required thickness. The obtained diameter of Al/CuO nanowires is 150-250 nm. Al/CuO nanowires composite were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), differential scanning calorimetry (DSC) and differential thermal analysis (DTA). Two distinct exothermic reactions occurred at 515 and 667 °C and total energy release of this thermite is 10 kJ/cm³.     

Scanning tunneling microscopy observation of initial growth of Sn and Ge1−xSnx layers on Ge(0 0 1) substrates

We have investigated the initial growth of Sn and Ge_1−xSn_x layers on Ge(0 0 1) surface by using scanning tunneling microscopy. After the growth of a 0.035 ML-thick Sn layer at room temperature, Sn clusters lining vertically to a dimer row was observed. In the case of the 0.035-0.018 ML-thick Sn growth at 250 °C, the characteristic surface reconstruction with the step-edge undulation like a comb was observed. In the growth of a Ge_0.994Sn_0.006 layer at 250 °C, the multilayer polynuclear growth with a lot of two-dimensional small domain was observed. These surface reconstructions should be accounted for by the large compressive stress induced in the surface layer due to the incorporation of Sn atoms.     

Influence of surface temperature and surface modifications on the initial layer growth of para-hexaphenyl on mica (0 0 1)

Ultra-thin films of para-hexaphenyl (6P) were prepared on muscovite mica (0 0 1) utilizing organic molecular beam deposition (OMBD) under well defined ultra high vacuum (UHV) conditions. The 6P growth characteristics were studied as a function of substrate temperature and substrate surface conditions. For the initial state of layer growth, thermal desorption spectroscopy (TDS) was used to verify the existence of a wetting layer. In this monomolecular continuous wetting layer, the molecules lie flat on the surface and are rather strongly bonded. For thicker films, in-situ X-ray photoelectron spectroscopy (XPS) in combination with (TDS) was applied to reveal the kinetics of the layer growth. Ex-situ atomic-force microscopy (AFM) was used to determine the film morphology. In particular, the influence of surface modifications (carbon contamination, sputtering) on 6P layer growth was investigated. XPS and low energy electron diffraction (LEED) were used to characterize the mica surface before the film deposition. TDS and AFM revealed a considerable change in film growth, from a needle-like island growth of flat laying molecules on top of the wetting layer (for the air cleaved mica) to terrace-like film growth of standing molecules, without a wetting layer (after surface modifications).     

Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

Electrical characteristics of B atomic-layer doped Si epitaxial films on Si(1 0 0) formed by B atomic-layer formation on Si(1 0 0) at 180 °C and subsequent capping Si deposition at 500 °C using ultraclean low-pressure chemical vapor deposition were investigated. From evaluation results of carrier concentration in the films, by low-temperature SiH₄ exposure at 180-300 °C before the capping Si deposition at 500 °C, 70% improvement of B electrical activity was confirmed, and it is suggested that lowering the temperatures for B atomic-layer formation on Si(1 0 0) as well as SiH₄ exposure before the capping Si deposition is effective to suppress B clustering and to achieve B atomic-layer doped Si films with extremely high carrier concentration.     

Surface morphology of metal films deposited on mica at various temperatures observed by atomic force microscopy

Thin films of eight metals with a thickness of 150 nm were deposited on mica substrates by thermal evaporation at various temperatures in a high vacuum. The surface morphology of the metal films was observed by atomic force microscopy (AFM) and the images were characterized quantitatively by a roughness analysis and a bearing analysis (surface height analysis). The films of Au, Ag, Cu, and Al with the high melting points were prepared at homologous temperatures T/T_m = 0.22-0.32, 0.40, and 0.56. The films of In, Sn, Bi, and Pb with the low melting points were prepared at T/T_m = 0.55-0.70, where T and T_m are the absolute temperatures of the mica substrate and the melting point of the metal, respectively. The surface morphology of these metal films was studied based on a structure zone model. The film surfaces of Au, Ag, and Cu prepared at the low temperatures (T/T_m = 0.22-0.24) consist of small round grains with diameters of 30-60 nm and heights of 2-7 nm. The surface heights of these metal films distribute randomly around the surface height at 0 nm and the morphology is caused by self-shadowing during the deposition. The grain size becomes large due to surface diffusion of adatoms and the film surfaces have individual characteristic morphology and roughnesses as T increases. The surface of the Al film becomes very smooth as T increases and the atomically smooth surface is obtained at T/T_m = 0.56-0.67 (250-350 °C). On the other hand, the atomically smooth surface of the Au film is obtained at T/T_m = 0.56 (473 ± 3 °C). The films of In, Sn, Bi, and Pb prepared at T/T_m = 0.55-0.70 also show the individual characteristic surface morphology.     

Initial study on the structure and photoluminescence properties of SiC films doped with Al

SiC films doped with aluminum (Al) were prepared by the rf-magnetron sputtering technique on p-Si substrates with a composite target of a single crystalline SiC containing several Al pieces on the surface. The as-deposited films were annealed in the temperature range of 400-800 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy (SEM). The results show that the introduction of Al into films hinders crystalline formation process. And with the increase of annealing temperature, more Si particles are formed in the films, which strongly affect the optical absorption properties. The photoluminescence (PL) spectra of the samples show two peaks at 370 nm and 412 nm. The intensities of the PL peaks are evidently improved after Al doped. We attribute the origin of the two PL peaks to a kind of Si-related defect centres. The obtained results are expected to have important applications in modern optoelectronic devices.     

Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2

Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (1 0 0) substrates. The electrical resistance of the films was monitored in situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.1 nm for films grown at room temperature to 3.3 nm for films grown at 400 °C. A continuous film was formed at a thickness of 2.9 nm at room temperature and 7.5 nm at 400 °C. The room temperature electrical resistivity decreases with increased growth temperature, while the in-plain grain size and the surface roughness, measured with a scanning tunneling microscope (STM), increase. Furthermore, the temperature dependence of the film electrical resistance was explored at various stages during growth.     

Surface evolution and three-dimensional shape changes of SiGe/Si(0 0 1) islands during capping at various temperatures

The authors use a combination of atomic force microscopy and selective wet chemical etching of the Si capping layer to investigate both the surface and the three-dimensional SiGe/Si(0 0 1) island shape changes during capping at various temperatures. Different evolution paths are identified depending on the capping temperature. During the early stages of Si overgrowth at 450 °C, a moderate SiGe alloying occurs near the island apex. In the later stages, island burying begins through lateral growth of pyramid-like structures, which consist of pure Si. A comparison with previous overgrowth studies allows us to clarify the role of the initial island size in determining the surface evolution above buried islands. Island dissolution with material transfer to the wetting layer dominates upon capping at 580 °C. Finally, when the temperature during growth and capping is identical, the islands become flatter and wider indicating that the system starts to evolve towards an energetically preferred SiGe quantum well.     

Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing

High-quality relaxed SiGe films on Si (0 0 1) have been demonstrated with a buffer layer containing modified SiGe (m-SiGe) islands in ultra-high vacuum chemical vapor deposition (UHV/CVD) system. The m-SiGe islands are smoothened by capping an appropriate amount of Si and the subsequent annealing for 10 min. This process leads to the formation of a smooth buffer layer with non-uniform Ge content. With the m-SiGe-dot multilayer as a buffer layer, the 500-nm-thick uniform Si_0.8Ge_0.2 layers were then grown. These m-SiGe islands can serve as effective nucleation centers for misfit dislocations to relax the SiGe overlayer. Surface roughness, strain relaxation, and crystalline quality of the relaxed SiGe overlayer were found to be a function of period's number of the m-SiGe-dot multilayer. By optimizing period number in the buffer, the relaxed Si_0.8Ge_0.2 film on the 10-period m-SiGe-dot multilayer was demonstrated to have a threading dislocation density of 2.0 × 10⁵ cm⁻² and a strain relaxation of 89%.     

Synthesis, characterization and optical properties of multipod ZnO whiskers

Multipod ZnO whiskers were synthesized successfully by two steps: pulsed laser deposition (PLD) and thermal evaporation process. First, a thin layer of Zn films were deposited on Si(1 1 1) substrates by PLD. Then the whiskers grew on Zn-coated Si(1 1 1) substrate by the simple thermal evaporation oxidation of the metallic zinc powder at 900 °C in the air without any catalysts or additives. The pre-deposited Zn films by PLD on the substrate can promote the growth of ZnO multipod whiskers effectively. The as-synthesized ZnO whiskers were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and high-resolution transmission electron microscopy (HRTEM). The results revealed that the whiskers are highly crystalline with the wurtzite hexagonal structure. Room temperature photoluminescence (PL) spectrum of the whiskers shows a UV emission peak at ∼393 nm and a broad green emission peak at ∼517 nm, which was assigned to the near band-edge emission and the deep-level emission, respectively.     

Inter-diffusion study in MgO tunneling magneto-resistive (TMR) system by XPS

In this paper, we investigated the elemental inter-diffusion in MgO TMR system, namely, between MgO barrier and free layer (CoFeB, NiFe or their combination) interface and the oxygen diffusion into the capping layers (Ta, Ru, TaN) at elevated temperatures using simple sheet film stack to simplify the results interpretation. Boron, cobalt, iron, and nickel show various diffusion tendencies into the MgO barrier after annealing the sheet film stack. Oxygen has different penetration depth into single CoFeB free layer upon annealing under N₂ + Ar protective atmosphere for different capping layers. Ru and TaN capping layer provide much better O₂ diffusion barrier, compared with Ta capping layer. This could potentially change the boron segregation tendency at free layer and capping layer interface and thus affect the interface crystallization process and lattice matching between the crystallized CoFeB free layer and the MgO(0 0 1) barrier layer. All these effects will impact the overall TMR performance.     

The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4:Eu,Dy thin films

In this study, SrAl₂O₄:Eu²⁺,Dy³⁺ thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40-700 °C. The structure, morphology and topography of the films were determined by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Photoluminescence (PL) data was collected in air at room temperature using a 325 nm He-Cd laser as an excitation source. The PL spectra of all the films were characterized by green phosphorescent photoluminescence at ∼530 nm. This emission was attributed to 4f⁶5d¹→4f⁷ transition of Eu²⁺. The highest PL intensity was observed from the films deposited at a substrate temperature of 400 °C. The effects of varying substrate temperature on the PL intensity were discussed.