Photoluminescence scanning on InAs/InGaAs quantum dot structures

The photoluminescence spectra of InAs quantum dots (QDs) embedded into four types of In_xGa_1−xAs/GaAs (x = 0.10, 0.15, 0.20 and 0.25) multi quantum well MBE structures have been investigated at 300 K in dependence on the QD position on the wafer. PL mapping was performed with 325 nm HeCd laser (35 mW) focused down to 200 μm (110 W/cm²) as the excitation source. The structures with x = 0.15 In/Ga composition in the In_xGa_1−xAs capping layer exhibited the maximum photoluminescence intensity. Strong inhomogeneity of the PL intensity is observed by mapping samples with the In/Ga composition of x ≥ 0.20-0.25. The reduction of the PL intensity is accompanied by a gradual “blue” shift of the luminescence maximum at 300 K as follows from the quantum dot PL mapping. The mechanism of this effect has been analyzed. PL peak shifts versus capping layer composition are discussed as well.     

Structural and photoluminescence analysis of Zn1 − xMnxO nanocrystalline powders

This Letter reports on structural and photoluminescence properties of Zn_1 − xMn_xO nanocrystalline powders, which were synthesized by using oxalate precursor decomposition method. From the XRD features, we have noticed that all samples exhibit wurtzite crystal structure. The origin of photoluminescence properties of Mn doped and undoped ZnO have been discussed.     

Optimization of growth parameters for MOVPE-grown GaSb and Ga1−xInxSb

The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 °C at atmospheric pressure. Trimethylindium was added in the case of Ga_1−xIn_xSb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga_1−xIn_xSb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga_1−xIn_xSb vapour composition and solid composition has been studied at a V/III ratio of 0.78.     

Photoluminescence study in step-graded composition InxAl1−xAs/GaAs

We report on the lattice-mismatched growth of step-graded In_xAl_1−xAs buffer layers on GaAs (0 0 1) substrates by molecular beam epitay (MBE). The approach to growing highly lattice-mismatched epilayers is to interpose a buffer layer between the substrate and the active layer. Two samples G30 and G40 with active layer compositions, respectively, x = 0.46 and x = 0.41, are studied by photoluminescence (PL). At low temperature, the PL spectra show a large broadened band whose energy and intensity depend on the active layer composition. The step-graded layer compositions improved the crystalline quality of these structures and increase the active layer PL band intensity.     

Structural and optical properties of a-Si1−xCx:H films synthesized by dc magnetron sputtering technique

Hydrogenated amorphous SiC films (a-Si_1−xC_x:H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H-SiC). The deposited a-Si_1−xC_x:H film was realized under a mixture of argon and hydrogen gases. The a-Si_1−xC_x:H films have been investigated by scanning electronic microscopy equipped with an EDS system (SEM-EDS), X-ray diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV-vis-IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure as a-Si_0.80C_0.20:H corresponding to 20 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centred at 463 nm (2.68 eV) and 542 nm (2.29 eV). In addition, the dependence of photoluminescence behaviour on film thickness for a certain carbon composition in hydrogenated amorphous SiC films (a-Si_1−xC_x:H) has been investigated.     

Effect of Si/Ge ratio on resistivity and thermopower in Gd5SixGe4−x magnetocaloric compounds

The effect of Si/Ge ratio on resistivity and thermopower behavior has been investigated in the magnetocaloric ferromagnetic Gd₅Si_xGe_4−x compounds with x=1.7-2.3. Microstructural studies reveal the presence of Gd₅(Si,Ge)₄-matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The x=1.7 and 2.0 samples display the presence of a first order structural transition from orthorhombic to monoclinic phase followed by a magnetic transition of the monoclinic phase. The alloys with x=2.2 and 2.3 display only magnetic transitions of the orthorhombic phase. A low temperature feature apparent in the AC susceptibility and resistivity data below 100 K reflects an antiferromagnetic transition of secondary phase(s) present in these compounds. The resistivity behavior study correlates with microstructural studies. A large change in thermopower of −8 μV/K was obtained at the magneto-structural transition for the x=2 compound.     

Photoluminescence at room temperature in polycrystalline BaxSr1−xTiO3 ceramics obtained by solid-state reaction method

Stoichiometric Ba_xSr_1−xTiO₃ ceramics (x=0.7, 0.8, and 0.9) have been prepared by solid-state reaction method. It has been observed in our experiments that the photoluminescence (PL) spectra in such samples at room temperature were centered around 800 nm; the results have been found to differ from observations in current literature. An explanation of this phenomenon was given, and the origin of such photoluminescence is ascribed to certain defects existing in these compounds, such as oxygen vacancies.     

Luminescence studies of rare earth doped yttrium gadolinium mixed oxide phosphor

This paper reports the photoluminescence and thermoluminescence properties of gamma ray induced rare earth doped yttrium gadolinium mixed oxide phosphor. The europium (Eu³⁺) was used as rare earth dopant. The phosphor was prepared by chemical co-precipitation method according to the formula (Y_2−x−yGd_x) O₃: Eu_y³⁺ (x=0.5; y=0.05). The photoluminescence emission spectrum of the prepared phosphor shows intense peaks in the red region at 615 nm for ⁵D₀→⁷F₂ transitions and the photoluminescence excitation spectra show a broad band located around 220–270 nm for the emission wavelength fixed at 615 nm. The thermoluminescence studies were carried out after irradiating the phosphor by gamma rays in the dose range from 100 Gy to 1 KGy. In the thermoluminescence glow curves, one single peak was observed at about 300 °C of which the intensity increases linearly in the studied dose range of gamma rays. The glow peak was deconvoluted by GlowFit program and the kinetic parameters associated with the deconvoluted peaks were calculated. The kinetic parameters were also calculated by various glow curve shape and heating rate methods.     

Metamagnetic transition and magnetocaloric effect in charge-ordered Pr0.68Ca0.32−xSrxMnO3 (x=0, 0.1, 0.18, 0.26 and 0.32) compounds

In this study, magnetic and magnetocaloric properties of Pr_0.68Ca_0.32−xSr_xMnO₃ (x=0, 0.1, 0.18, 0.26 and 0.32) compounds were investigated. X-ray results indicated that all the samples have a single phase of orthorhombic symmetry. The orthorhombic unit cell parameters increase with the increase in Sr content. Large negative magnetic entropy changes (−26.2 J/kg K at 38 K and 5 T for x=0 and −6.5 J/kg K at 83 K and 6 T for x=0.1) were attributed to ultrasharp metamagnetic transitions. The peak value of ΔS_m decreased from −4.1 J/kg K for x=0.18 sample to −2.4 J/kg K for x=0.32 at 1 T magnetic field.     

Anisotropy and FOMP in Tb3 (Fe28−xCox) V1.0 (x=0, 3 and 6) compounds

In this work, the structural and magnetic properties of Tb₃ (Fe_28−xCo_x) V_1.0 (x=0, 3, 6) compounds have been investigated. The structural characterization of compounds by X-ray powder diffraction is an evidence for a monoclinic Nd₃(Fe, Ti)₂₉-type structure (A2/m space group). The refined lattice parameters a and b (but not c) and the unit cell volume V, obtained from the XRD data by the Rietveld method, are found to decrease with increasing Co concentration. The unit cell parameters behavior has been attributed to the smaller Co atoms and a preferential substitution of Fe by Co. The anisotropy field (H_a) as well as critical field (H_cr) was measured using the singular point detection (SPD) technique from 5 to 300 K in a pulsed magnetic field of up to 30 T. At T=5 K, a FOMP of type 2 was observed for all samples and persists at all temperatures up to 300 K. For sample x=0, H_cr=10.6 and 2.0 T at 5 and 300 K, respectively, is equal to that reported earlier. The occurrence of canting angles between the magnetic sublattices during the magnetization process instead of high-order anisotropy contributions (at room temperature are usually negligible) has been considered to explain the survival of the FOMP at room temperature. The anisotropy and critical fields behave differently for samples with x=0, 3 compared with x=6. The observed behavior has been related to the fact that the Co substitution for Fe takes place with a preferential entrance in the inequivalent crystallographic sites of the 3:29 structure. The contribution of the Tb-sublattice in the Tb₃(Fe, V)₂₉ compound with uniaxial anisotropy has been scaled from the anisotropy field measured on a Y₃(Fe, V)₂₉ single crystal with easy plane anisotropy.     

Effects of oxygen partial pressure and substrate temperature on the structure and optical properties of MgxZn1−xO thin films prepared by magnetron sputtering

Deposited with different oxygen partial pressures and substrate temperatures, Mg_xZn_1−xO thin films were prepared using a Mg_0.6Zn_0.4O ceramic target by magnetron sputtering. The structural and optical properties of the prepared thin films were investigated. The X-ray diffraction spectra reveal that all the films on quartz substrate are grown along (2 0 0) orientation with cubic structure. The lattice constant decreases and the crystallite size increases with the increase of substrate temperature. Both energy dispersive X-ray spectroscopy and calculated results suggest the ratio of Mg/Zn increases with increasing substrate temperature. The thin film deposited with T_s = 500 °C has a minimal rms roughness of 7.37 nm. The transmittance of all the films is higher than 85% in the visual region. The optical band gap is not sensitive to the oxygen partial pressure, while it increases from 5.63 eV for T_s = 100 °C to 5.95 eV for T_s = 700 °C. In addition, the refractive indices calculated from transmission spectra are sensitive to the substrate temperature. The photoluminescence spectra of Mg_xZn_1−xO thin films excited by 330 nm ultraviolet light indicate that the peak intensity of the spectra is influenced by the oxygen partial pressure and substrate temperature.     

Magnetic properties of nanocrystalline Co1−xZnxFe2O4 prepared by forced hydrolysis method

Nanocrystalline zinc-substituted cobalt ferrite powders, Co_1−xZn_xFe₂O₄ (x=0, 0.2, 0.4), were for the first time prepared by forced hydrolysis method. Magnetic and structural properties in these specimens were investigated. The average crystallite size is about 3.0 nm. When the zinc substitution increases from x=0 to x=0.4, at 4.2 K, the saturation magnetization increases from 72.1 to 99.7 emu/g and the coercive field decreases from 1.22 to 0.71 T. All samples are superparamagnetic at room temperature and ferrimagnetic at temperatures below the blocking temperature. The high value of the saturation magnetization and the very thin thickness of the disorder surface layer of all samples suggests that this forced hydrolysis method is suitable not only for preparing two metal element systems but also for three or more ones.     

Enhanced luminescence of GdTaO4:Eu thin-film phosphors by K doping

The effect of K⁺ ions on GdTaO₄:Eu³⁺ thin-film phosphors was investigated in order to improve their luminescent properties. The GdTaO₄:Eu_0.1, K_x thin films were synthesized by sol-gel process, and characterized through measuring their microstructure and luminescence. The results indicated that photoluminescence (PL) intensity of GdTaO₄:Eu³⁺ film was improved remarkably by K doping. There were two maxima in the curve of PL intensity against K⁺ dopant concentration, where one was improved up to 2.1 times at x = 0.001 and the other was enhanced up to 2.7 times at x = 0.05. The first maximum was regarded as the alteration of the local environment surrounding the Eu³⁺ activator by incorporation of K⁺ ions, and the second maximum was due to the flux effect. Additionally, the luminescence increased with the increase of firing temperature from 800 °C to 1200 °C.     

Synthesis and luminescence properties of red-emitting phosphors NaY0.87Eu0.13(WO4)1.2(MoO4)0.8

A series of NaY_1−yEu_y(WO₄)_2−x(MoO₄)_x (x=0−2 and y=0.06−0.15) phosphors have been prepared by a combustion route. X-ray powder diffraction, photoluminescence excitation and emission spectra were used to characterize the resulting samples. The excitation spectra of these phosphors show the strongest absorption at about 396 nm, which matches well with the commercially available n-UV-emitting GaN-based LED chip. Their emission spectra show an intense red emission at 616 nm due to the ⁵D₀→⁷F₂ electric dipole transition of Eu³⁺. As the Mo content increases, the intensity of the ⁵D₀→⁷F₂ emission of Eu³⁺ activated at wavelength of 396 nm increases and reaches a maximum when the relative ratio of Mo/W is 2:3. The intense red-emission of the tungstomolybdate phosphors at near-UV excitation suggests that the material is a potential candidate for white light emitting diode (WLEDs).     

Magnetic entropy change in GdCo13−xSix intermetallic compounds

The magnetic entropy change in GdCo_13−xSi_x (x=3.8, 4, 4.1, and 4.2) intermetallic compounds has been investigated by means of magnetic measurements in the vicinity of their Curie temperature. It was found that the magnetic ordering temperatures decrease from 60 K at x=3.8 to 28 K for x=4.2. The magnetic entropy change is calculated from isothermal magnetization versus magnetic field at various temperatures using the Maxwell relation. As a result, the maximum magnetic entropy changes of the investigated compounds, at their Curie temperatures, decrease from 11.5 J/kg K for x=4.2 to 6.86 J/kg K for x=3.8 in a field change of 0-3 T, whereas it decreases from 5.13 J/kg K for x=4.2 to 2.60 J/kg K for x=3.8 in a field change of 0-1 T. Moreover, the maximum value of the magnetic entropy change obtained at a higher field for GdCo_13−xSi_x with x=4 (23.75 J/kg K at 5 T) is comparable to that of various types of compounds with a cubic NaZn₁₃-type structure. Finally, the maximum of the magnetic entropy change is found to decrease with increasing Si content.     

Structure and magnetic properties of SmCoxTi0.4-1:7 ribbons

SmCo_xTi_0.4 (x=6.6, 7.1, 7.6, 8.1) ribbons have been prepared by melt spinning at a wheel speed of 42 m/s, followed by annealing at 750 °C for 2 h. Both as-spun and as-annealed ribbons possess the disordered TbCu7-type (1:7) phase even when the Sm/(Co,Ti) atomic ratio deviates from 1/7. The c/a ratio increases with increasing Co concentration x, but the unit cell volume decreases. The Curie temperatures show above 700 °C, increasing from 707 °C for x=6.6 to 782 °C for x=8.1. The saturation magnetizations increase almost linearly with increasing Co content. The observed magnetic hardening is believed to arise from the high magnetocrystalline anisotropy of the 1:7 phase and the fine nanograin structure. The intrinsic coercivity of 9797 Oe has been obtained in the melt-spun SmCo_7.1Ti_0.4 ribbons.     

Effects of substrate bias and nitrogen flow ratio on the surface morphology and binding state of reactively sputtered ZrNx films before and after annealing

ZrN_x films were sputtered in an Ar + N₂ atmosphere, with different substrate biases (0 to −200 V) at various nitrogen flow ratios (%N₂ = 0.5-24%). The surface morphology, resistivity, crystllinity, and bonding configuration of ZrN_x films, before and after vacuum annealing, were investigated. As compared with ZrN_x films grown without substrate bias, before and after annealing, the resistivity of 1% and 2% N₂ films decreases with increasing substrate biases. Simultaneously, if the applied bias is too high, the crystallinity of ZrN_x film will decrease. The surfaces of 1% and 2% N₂ flow films deposited without bias have small nodules, whereas the surface morphology of films deposited at −100 V of substrate bias exhibits large nodules and rugged surface. Once a −200 V of substrate bias is applied to the substrate, the surface morphology of ZrN_x films, grown at 1% and 2% nitrogen flow ratios, is smooth. Furthermore, there are two deconvoluted peaks in XPS spectra (i.e., Zr-O and Zr-N) of ZrN_x films deposited at −200 V of substrate bias before and after annealing. On the other hand, the surface morphology changes dramatically from rugged surfaces for film deposited at lower nitrogen flow ratio (%N₂ < 1%) to smoother and denser surfaces for film grown at higher nitrogen flow ratio (%N₂ ≥ 1%). The Zr-N bonding in 2% N₂ films still exist after annealing at 700 °C, while the Zr-N bonding in 0.5% and 16% N₂ flow film vanish at the same temperature. The connection between the resistivity, crystallinity, surface morphology, and bonding configuration of ZrN_x films and how they are influenced by the substrate bias and nitrogen flow ratio are discussed in this paper.     

Photoluminescence investigation of ferromagnetic Ga1−xMnxN layers with GaN templates grown on sapphire (0 0 0 1) substrates

We have investigated the temperature and composition dependent photoluminescence (PL) spectra in Ga_1−xMn_xN layers (where x ≈ 0.1-0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. The efficient PL is peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. The band-gap energy of the Ga_1−xMn_xN layers decreased with increasing temperature and manganese composition. The band-gap energy of the Ga_1−xMn_xN layers was modeled by the Varshni equation and the parameters were determined to be α = 2.3 × 10⁻⁴, 2.7 × 10⁻⁴, 3.4 × 10⁻⁴ eV/K and β = 210, 210, and 230 K for the manganese composition x = 0.1%, 0.2%, and 0.8%, respectively. As the Mn concentration in the Ga_1−xMn_xN layers increased, the temperature dependence of the band-gap energy was clearly reduced.     

Synthesis and structural,magnetic characterization of Zn(Mn)O diluted magnetic semiconductor

The bulk samples with nominal composition Zn_1−x Mn_x O [x = 5% and 7%] were synthesized at 930 °C by Standard Solid State Reaction method. The structural analysis reveals the single phase nature. The Topography study indicates the distribution of the particles. Magnetic property was affirmed by Vibrating Sample Magnetometer, Zn_1−x Mn_x O (with x = 5%), low concentration of dopant shows good ferromagnetism compared to high concentration in Zn_1−x Mn_x O (with x = 7%).     

Study on the structure and optical property of Zn1−xCuxO sol–gel thin films on quartz substrate

Zn_1−xCu_xO thin films (x=0, 1.0, 3.0, 5.0%) are prepared on quartz substrate by sol–gel method. The structure and morphology of the samples are investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results show that Cu ions were effectively penetrated into the ZnO crystal lattices with substitutional and interstitial impurities to form stable solid solutions without changing the polycrystalline wurtzite structure. Two peaks at 420 nm (2.95 eV, violet), 485 nm (2.56 eV, blue) have been observed from the photoluminescence (PL) spectra of the samples. It is concluded that the violet peak may correspond to the exciton emission; the blue emission corresponds to the electron transition from the bottom of the conduction band to the acceptor level of zinc vacancy. The optical test shows that the optical band gap E_g is decreased with the increase amount of Cu doping in ZnO. The band gap decrease from 3.40 eV to 3.25 eV gradually. It is also found that the transmission rate is increased rapidly with the increase of Cu ions concentration.