Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation

A SiGe-on-insulator (SGOI) structure with high Ge content and low density of dislocations is fabricated by a modified Ge condensation technique. The formation and elimination of stacking faults during condensation process are analyzed by transmission electron microscopy. A Si_0.19Ge_0.81OI substrate is fabricated utilizing two steps of oxidation and intermittent annealing. The time of oxidation or annealing at 900 °C is essential for the elimination of stacking faults in high Ge content SGOI substrate. The surface morphology of SGOI is investigated by atomic force microscopy and the defect density is evaluated from wet etching method. After the final condensation, the surface root-mean-square roughness (rms) of SiGe layer is kept below 1 nm and the threading defect density is controlled around 10⁴ cm⁻². The smooth surface and integrated lattice structure of SiGe layer indicate that the SGOI is suitable for heteroepitaxial growth of strained Ge, GaAs and III-V compounds.     

Properties of Cu film and Ti/Cu film on polyimide prepared by ion beam techniques

Cu film and Ti/Cu film on polyimide substrate were prepared by ion implantation and ion beam assisted deposition (IBAD) techniques. Three-dimension white-light interfering profilometer was used to measure thickness of each film. The thickness of the Cu film and Ti/Cu film ranged between 490 nm and 640 nm. The depth profile, surface morphology, roughness, adhesion, nanohardness, and modulus of the Cu and Ti/Cu films were measured by scanning Auger nanoprobe (SAN), atomic force microscopy (AFM), and nanoindenter, respectively. The polyimide substrates irradiated with argon ions were analyzed by scanning electron microscopy (SEM) and AFM. The results suggested that both the Cu film and Ti/Cu film were of good adhesion with polyimide substrate, and ion beam techniques were suitable to prepare thin metal film on polyimide.     

Anisotropy analysis of the surface stress and surface energy in Cu surfaces with the modified embedded atom method

Taking Cu as an example, the surface stress and surface energy in three low index surfaces and two families of representative surfaces and belong to [0 0 1]- and -rotating axis respectively, have been calculated using MEAM. For the three low index surfaces, the decrease in the surface energy is small after relaxation, while the surface stresses in the surface planes τ_xx and τ_yy show opposite changes (decreasing and increasing) for inward and outward relaxations. The resulting relaxation direction is related to the normal stress τ_zz before relaxation. For the surfaces of the and families, with the increasing angle α (between the and (1 0 0) planes, and between and (0 0 1) planes, respectively), the surface stress and surface energy go through an oscillatory change. The surface stress and surface energy are symmetric about the planes (1 0 0), (1 1 0) and (0 1 0) at α=0^°, 45^° and 90^°, and about the planes (0 0 1) and (1 1 0) at α=0^° and 90^° respectively, due to crystal symmetry.