Crystallinity and morphology dependent luminescence of Li-doped Y2−xGdxO3:Eu thin film phosphors

The influence of lithium doping on the crystallization, the surface morphology, and the luminescent properties of pulsed laser deposited Y_2−xGd_xO₃:Eu³⁺ thin film phosphors was investigated. The crystallinity, the surface morphology, and the photoluminescence (PL) of films depended highly on the Li-doping and the Gd content. The relationship between the crystalline and morphological structures and the luminescent properties was studied, and Li⁺ doping was found to effectively enhance not only the crystallinity but also the luminescent brightness of Y_2−xGd_xO₃:Eu³⁺ thin films. In particular, the incorporation of Li and Gd into the Y₂O₃ lattice could induce remarkable increase in the PL. The highest emission intensity was observed Li-doped Y_1.35Gd_0.6O₃:Eu³⁺ thin films whose brightness was increased by a factor of 4.6 in comparison with that of Li-doped Y₂O₃:Eu³⁺ thin films.     

Low-voltage cathodoluminescence property of Li-doped Gd2−xYxO3:Eu

Cathodoluminescent (CL) spectra of Li-doped Gd_2−xY_xO₃:Eu³⁺ solid-solution (0.0?x?0.8) were investigated at low voltages (300 V-1 kV). The CL intensity is maximum for the composition of x=0.2 and gradually reduces with increasing the amount of substituted Y content. In particular, small (∼100 nm) particles of Li-doped Gd_1.8Y_0.2O₃:Eu³⁺ are obtained by firing the citrate precursors at only 650°C for 18 h. Relative red-emission intensity at 300 V of this phosphor is close to 180% in comparison with that of commercial red phosphor Y₂O₃:Eu³⁺. An increase of firing temperature to 900°C results in 400-600 nm sized spherical particles. At low voltages (300-800 V), the CL emission of 100 nm sized particles is much stronger than that of 400-600 nm sized ones. In contrast, the larger particles exhibit the higher CL emission intensity at high voltages (1-10 kV). Taking into consideration small spherical morphology and effective CL emission, Li-doped Gd_1.8Y_0.2O₃:Eu³⁺ appears to be an efficient phosphor material for low voltage field emission display.     

Synthesis and Eu concentration-dependent photoluminescence of Gd2−xEuxO3 nanowires

The nanowire growth behavior and photoluminescence characteristics of red-emitting oxide phosphor Gd_2−xEu_xO₃ have been investigated in the function of activator (Eu³⁺) concentrations (x=0.08, 0.12, 0.16, 0.20, and 0.24). Nanowires of Gd_2−xEu_xO₃ phosphor were prepared by the dehydration of corresponding hydroxides Gd_1−x/2Eu_x/2(OH)₃ obtained by the hydrothermal reaction. Highly uniform nanowires of 20-30 nm in diameter can grow up to several tens of micrometers in length. A number of defects on the surface of Gd_1.92Eu_0.08O₃ nanowires, which are induced during structural transformation from hexagonal hydroxide to cubic oxide, strongly decrease the luminescence efficiency in comparison with that of the bulk phosphor. In contrast, the photoemission intensity of nanowires is significantly improved with increasing Eu³⁺ content (x) of Gd_2−xEu_xO₃ solid solution. The highest relative emission intensity of nanowires is observed when the x value is close to x=0.20. This content is much higher than the optimal concentration of Eu³⁺ (x=0.08-0.10) for the bulk Gd₂O₃:Eu powder.     

Luminescent properties of HTP AgGd1−xW2O8:Eux and AgGd1−x(W1−yMoy)2O8:Eux phosphor for white LED

Intense red phosphors, AgGd_1−xEu_x(W_1−yMo_y)₂O₈ (x=0.0-1.0, y=0.0-1.0), have been synthesized through traditional solid-state reaction and characterized by X-ray diffraction (XRD) and photoluminescence (PL). XRD results reveal that AgGd_1−xEu_xW₂O₈ synthesized at 1000 °C has a tetragonal crystal structure, which is named as high temperature phase (HTP) AgGdW₂O₈. All phosphors compositions with Eu³⁺ show red and green emission on excitation either in the charge-transfer or Eu³⁺ levels. Analysis of the emission spectra with different Eu³⁺ concentrations reveal that the optimum dopant concentration for Eu³⁺ is x=0.6 in the HTP AgGd_1−xEu_xW₂O₈ (x=0.0-1.0). Studies on the AgGd_0.4Eu_0.6(W_1−yMo_y)₂O₈ (y=0.0-1.0) and AgGd_1−xEu_x(W_0.7Mo_0.3)₂O₈ (x=0.0-1.0) show that the emission intensity is maximum for compositions with y=0.3 and x=0.5, respectively, and a decrease in emission intensity is observed for higher y or x values. The Mo⁶⁺ and Eu³⁺ co-doped AgGd(WO₄)₂ phosphors show higher emission intensity in comparison with the singly Eu³⁺-doped AgGd(WO₄)₂ in UV region. The intense emission of the tungstate/molybdate phosphors under 394 and 465 nm excitations, respectively, suggests that these materials are promising candidates as red-emitting phosphors for near-UV/blue GaN-based white LED for white light generation.     

Influence of alkali metal ions doping content on photoluminescence of (Y, Gd) BO3:Eu red phosphors under VUV excitation

The red-emitting Y_0.65−xGd_0.25M_xBO₃:0.10Eu³⁺ (M=Li, Na, K 0.00≤x≤0.10) phosphors were synthesized by solid-state reaction and their photoluminescence characteristics were studied under vacuum ultraviolet (VUV) excitation. The emission intensity is significantly improved by adding alkali metal ions dopants because they introduce some bounded electron−hole pairs, which act as an intermediator for the excitation energy transfer from the host lattice to the activator Eu³⁺. The chromaticity was improved due to the distorted surrounding of Eu³⁺. The emission intensity of the Y_0.65−xGd_0.25 M_xBO₃:0.10Eu³⁺ increased up to maximum with alkali metal ions doped to a certain concentration and then decreased with the increase in of alkali metal dopants.     

X-ray photoelectron study of Sn1−xMnxTe semimagnetic semiconductors

X-ray photoelectron (XPS) studies of core-levels in Sn_1−xMn_xTe (x < 0.1) semimagnetic semiconductors have been performed. The spectra were acquired under UHV conditions from the clean (as-cleaved or in-situ scraped) crystal surface. The single-phase NaCl structure of the alloys studied was verified by X-ray diffraction (XRD). The structure of Sn 3d and Te 3d core-levels in SnMnTe was found fully consistent with that of SnTe. Remarkable qualitative similarity of the Mn 2p spectrum of Sn_1−xMn_xTe (x = 0.09) with the case of zinc-blende MnTe [R.J. Iwanowski, M.H. Heinonen, E. Janik, Chem. Phys. Lett. 387 (2004) 110] has been shown: (1) the same binding energies (BEs) of the main contributions to the Mn 2p_3/2 line, related to Mn²⁺ state of the bulk MnTe bond; (2) occurrence of low BE component in the Mn 2p spectrum, indicative of clean-surface species containing reduced-valence Mn ions (i.e. Mn^q+, where 0 < q < 2); (3) strong satellites of the 2p_3/2 (Mn²⁺ related) parent lines. In SnMnTe, the highest intensity ratio of the satellite to main peak (ever reported for Mn 2p photoelectron spectrum) was revealed; this was interpreted in terms of the so-called charge-transfer model.     

The p-n junction formation in Hg1−xCdxTe by laser annealing method

The formation of p-n junctions in Hg_1−xCd_xTe is still an open research task. In this paper, laser treatment of n-type Hg_1−xCd_xTe samples resulting in the formation of a p-n junction is studied. The YAG:Nd³⁺ laser with pulse duration of 250 μs or 40 ns was used. The energy density of laser beam was below the threshold of sample surface melting. The interpretation of the results is based on a model of defects formation related to interstitial mercury diffusion following laser irradiation. The Hall measurements clearly point out to a simple p-n junction. The resistance of samples shows the long time relaxation described by the 1/2 power law, which is attributable to the defect diffusion processes, but not to the changes in the electron-hole systems.     

Investigations on structural and optical properties of Zn1−xGdxS nanoparticles

Zn_1−xGd_xS (x = 0.00, 0.02 and 0.04) nanoparticles were synthesized by facile chemical co-precipitation method using PVP as a surfactant. ZnS nanoparticles could be doped with Gd ions during synthesis without altering the XRD patterns of ZnS. Also, the pattern of the powders showed cubic zincblende structure. The particle size obtained from the XRD studies lies in the range 3-5 nm, whereas from TEM analysis it is 4 nm for x = 0.02 sample. The UV-Vis absorption spectra revealed that Zn_1−xGd_xS nanoparticles exhibit strong confinement effect as the blue shift in the absorption spectra with that of the undoped ZnS. The photoluminescence spectra showed enhanced luminescence intensity and the entry of Gd into host lattice.     

Synthesis and luminescence behavior of Eu-doped CaF2 nanoparticles

Luminescent Ca_1−xF_2+x:Eu_x nanoparticles were synthesized by a chemical co-precipitation method in an ethanol solution. The Ca_1−xF_2+x:Eu_x nanoparticles exhibit a sphere-like morphology with particle diameter of about 15-20 nm. With increasing concentration of Eu³⁺ ion the intensity of XRD diffraction peaks decreased significantly and full width at half-maximum of the peaks increased gradually, which indicated that more Eu³⁺ ions resulted in the increase of structural defects. The emission spectrum of Ca_1−xF_2+x:Eu_x nanoparticles consisted of a few narrow, sharp lines corresponding to Eu³⁺ ions. The luminescence intensity of Ca_1−xF_2+x:Eu_x nanoparticles increased with increasing concentration of Eu³⁺ ion and reached a maximum at approximately 15 mol%.     

The dependence of the structural and optical properties on the Te mole fraction in ZnS1−xTex/GaAs heterostructures

Lattice-mismatched ZnS_1−xTe_x epilayers with various Te mole fractions on GaAs (100) substrates were grown by double well temperature gradient vapor deposition. X-ray diffraction patterns showed that the grown ZnS_1−xTe_x layers were epitaxial films. The photoluminescence spectra showed that the peak position of the acceptor-bound exciton (A⁰, X) varied dramatically with changing the Te mole fraction and that the behavior of the (A⁰, X) peak position of the ZnS_1−xTe_x epilayers with a small amount of the Te mole fraction was attributed to a bowing effect. The reflectivity and ellipsometry spectra showed that the absorption energy peak was significantly affected due to the Stoke's effect. These results provide important information on the structural and optical properties of ZnS_1−xTe_x/GaAs heterostructures for improving optoelectronic device efficiencies operating in the spectral range between near ultraviolet and visible regions.     

Improved luminescent properties of red-emitting Ca0.54Sr0.16Eu0.08Gd0.12(MoO4)0.2(WO4)0.8 phosphor for LED application by charge compensation

The red-emitting Ca_0.54Sr_0.16Eu_0.08Gd_0.12(MoO₄)_0.2(WO₄)_0.8 phosphor is improved in the emission charateristics by charge compensation, of which chromaticity coordinates (CIE) are x=0.66 and y=0.33. Three approaches to charge compensation are investigated, namely (a) 3Ca²⁺/Sr²⁺→2Eu³⁺/Gd³⁺+vacancy, (b) 2Ca²⁺/Sr²⁺→Eu³⁺/Gd³⁺+M⁺(M⁺ is a monovalent cation like Li⁺, Na⁺ and K⁺ employed as a charge compensator) and (c) Ca²⁺/Sr²⁺→Eu³⁺/Gd³⁺+N⁻ (N⁻ is a monovalent anion like F⁻, Cl⁻, Br⁻ and I⁻ employed as charge compensation ions). Through photoluminescent spectra analyzing the radiative and non-radiative relaxation mechanisms of luminescent system are obtained. Under 20 mA forward-bias current, one red-emitting LED is made by combining 390-405 nm-emitting LED chip and the phosphor. The red-emitting phosphor has broad prospects in LED application field.     

Novel red phosphors for solid state lighting; the system BixLn1−xVO4; Eu/Sm (Ln=Y, Gd)

Solid solutions of vanadates of formula Bi_xLn_1−xVO₄ (Ln=Y, Gd) doped with Eu³⁺ or Sm³⁺ ions have been synthesized by solid-state reactions. Intense red/orange-red luminescence is obtained in these samples on excitation in the broad charge-transfer band in the near UV. The excitation in the Eu³⁺ levels leads to much less intense red emission. These materials could find applications as red phosphors for solid-state white lighting devices utilizing GaN-based excitation in the near UV.     

Photoluminescence properties of Sr1-xSi2O2N2: Eux as green to yellow-emitting phosphor for blue pumped white LEDs

This study evaluated potential applications of green to yellow-emitting phosphors (Sr_1−xSi₂O₂N₂: Eu²⁺_x) in blue pumped white light emitting diodes. Sr_1-xSi₂O₂N₂: Eu²⁺_x was synthesized at different Eu²⁺ doping concentrations at 1450 °C for 5 h under a reducing nitrogen atmosphere containing 5% H₂ using a conventional solid reaction method. The X-ray diffraction patterns of the prepared phosphor (Sr_1-xSi₂O₂N₂: Eu²⁺_x) were indexed to the SrSi₂O₂N₂ phase and an unknown intermediate phase. The photoluminescence properties of these phosphors (Sr_1−xSi₂O₂N₂: Eu²⁺_x) showed that the samples were excited from the UV to visible region due to the strong crystal field splitting of the Eu²⁺ ion. The emission spectra under excitation of 450 nm showed a bright color at 545-561 nm. The emission intensity increased gradually with increasing Eu²⁺ doping concentration ratio from 0.05 to 0.15. However, the emission intensity decreased suddenly when the Eu²⁺ concentration ratio was >0.2. As the doping concentration of Eu²⁺ was increased, there was a red shift in the continuous emission peak. These results suggest that Sr_1-xSi₂O₂N₂: Eu₂⁺_x phosphor can be used in blue-pumped white light emitting diodes.     

Luminescence and time-resolved spectroscopy properties of (Gd1−xEux)(BO2)3 multicrystals

(Gd_1?xEu_x)(BO₂)₃ (0≤x≤1) phosphors are synthesized by traditional high temperature solid state reaction. The photoluminescence (PL) properties of Gd(BO₂)₃ and Gd(BO₂)₃ activated with Eu³⁺ are investigated. The PL spectra exhibit the typical characteristic emission and excitation of Gd³⁺ and Eu³⁺ ions, and support the energy transfer taking place from Gd³⁺ to Eu³⁺ ions. The relationship between Eu³⁺ doping concentration and emission intensity is also studied. Even if all of the Gd³⁺ ions are substituted by Eu³⁺ ions, the concentration quenching between Eu³⁺ happens. However, the quenching is not complete. The luminescence decay curves are measured, and the lifetimes become short with the Eu³⁺ content increasing. The decreasing Gd³⁺ lifetimes also indicates that there exists efficient energy transfer between Gd³⁺ and Eu³⁺ ions.     

Coexistence of superconductivity and magnetism in the La0.87−xLnxSr0.13FeAsO (Ln=Sm, Gd, Dy) system

The interplay between the superconducting phase and spin density wave order phase was studied. We report the magnetic and superconducting properties of the hole-doped FeAs-based superconducting compound La_0.87−xLn_xSr_0.13FeAsO (Ln=Sm, Gd, Dy; 0≤x≤0.06). Both resistivity and magnetic susceptibility measurements show that the superconducting transition temperature decreases with increase in composition of magnetic ions. The hysteresis loop of the La_0.87−xLn_xSr_0.13FeAsO sample shows a superconducting hysteresis in addition to a paramagnetic background. The experiment demonstrates that the magnetism and superconductivity coexist in hole-doped FeAs-based superconducting compounds. Among these three magnetic rare-earth elements, the influence of Dy³⁺ doping on superconductivity is more evident than that of Gd³⁺ doping, while the influence of Sm³⁺ doping is the weakest. The trend is consistent with the variation of the lattice parameter along c-axis.     

The synthesis and the magnetic properties of Gd-doped FexCo1−x/CoyFe3−yO4 micro-octahedrons composites

Gd³⁺-substituted micro-octahedron composites (Fe_xCo_1−x/Co_yGd_zFe_3−y−zO₄) in which the Fe-Co alloy has either a bcc or fcc structure and the oxide is a spinel phase were fabricated by the hydrothermal method. The X-ray diffraction (XRD) patterns indicate that the as-synthesized Gd³⁺-substituted micro-octahedron composites are well crystallized. Scanning electron microscopy (SEM) images show that the final product consists of larger numbers of micro-octahedrons with the size ranging from 1.3 to 5 μm, and the size of products are increased with increasing the concentration of KOH. The effect of the Co²⁺/Fe²⁺ ratio (0?Co²⁺/Fe²⁺?1) and substitution Fe³⁺ ions by Gd³⁺ ions on structure, magnetic properties of the micro-octahedrons composites were investigated, and a possible growth mechanism is suggested to explain the formation of micro-octahedrons composites. The magnetic properties of the structure show the maximal saturation magnetization (107 emu/g) and the maximal coercivity (1192 Oe) detected by a vibrating sample magnetometer.     

Ca1−xMo1−ySiyO4:Eux: A novel red phosphor for white light emitting diodes

Single phase of Ca_1−xMo_1−ySi_yO₄:Eu_x³⁺ (0.18?x?0.26, 0?y?0.04) was synthesized by solid-state method. The photoluminescence investigation indicated that Ca_1−xMoO₄:Eu_x³⁺ (0.18?x?0.26) could be effectively excited by 393 and 464 nm, and it exhibited an intense red emission at 615 nm. The introduction of Si⁴⁺ ions did not change the position of the peaks but strongly enhanced the emission intensity of Eu³⁺ under 393 and 464 nm excitations and showed very good color purity. The emission intensity of optimal Ca_0.8Mo_0.98Si_0.02O₄:Eu_0.2³⁺ sample (excited by 393 nm) was about 5.5 times higher than that of the phosphor Y₂O₂S:0.05Eu³⁺. So this phosphor could be nicely suitable for the application of the UV LED chips.     

Investigation of the effect of annealing on the magnetic properties of Sn1−xEuxTe single crystals

A study of the effect of annealing on the magnetic properties of single crystals Sn_1−xEu_xTe is reported. The width of the electron paramagnetic resonance line of the crystal is found to decrease upon annealing but its g-value of 1.991 is nearly unaffected. Magnetization results indicate that the pair exchange interaction is weakly antiferromagnetic with a value of −0.67 K for the non-annealed sample and −0.29 K after annealed sample. Susceptibility measurements performed as a function of temperature also indicate the presence of EuTe clusters in the as-grown Sn_1−xEu_xTe crystals. Therefore it was deduced that the Eu²⁺ ions tend to form clusters, particularly pairs, in the as-grown crystal and these clusters disappear after annealing, as the Eu²⁺ ions occupy isolated sites in the SnTe host lattice.     

Novel phosphors of Eu, Tb or Bi activated Gd2GeO5

Novel phosphors of or Bi³⁺ doped Gd₂GeO₅ were synthesized and their photoluminescent and cathodoluminescent properties were investigated. (Gd_1−xEu_x)₂GeO₅ and (Gd_1−xTb_x)₂GeO₅ formed continuous solid solution in the range of x=0.0-1.0. Gd₂GeO₅:Eu³⁺ and Gd₂GeO₅:Bi³⁺ presented bright red and blue luminescence for both UV and cathode ray excitation, respectively. While Gd₂GeO₅:Tb³⁺ gave bright green cathodoluminescence. In all three phosphors, the energy transfer from Gd³⁺ to activators (e.g. or Bi³⁺) occurred.     

Crystal structure and photoluminescence of (Y1−xCex)2Si3O3N4

Oxonitridosilicate phosphors with compositions of (Y_1−xCe_x)₂Si₃O₃N₄ (x=0−0.2) have been synthesized by solid state reaction method. The structures and photoluminescence properties have been investigated. Ce³⁺ ions have substituted for Y³⁺ ions in the lattice. The emission and excitation spectra of these phosphors show the characteristic photoluminescence spectra of Ce³⁺ ions. Based on the analyses of the diffuse reflection spectra and the PL spectra, a systematic energy diagram of Ce³⁺ ion in the forbidden band of sample with x=0.02 is given. The best doping Ce content in these phosphors is ∼2 mol%. The quenching temperature is ∼405 K for the 2 mol% Ce content sample. The luminescence decay properties were investigated. The primary studies indicate that these phosphors are potential candidates for application in three-phosphor-converted white LEDs.