Photoluminescence activity of Yang and Secco etched multicrystalline silicon material

Ultraviolet and blue-green photoluminescence (PL) was investigated on multicrystalline silicon (mc-Si) samples chemically etched by Secco and Yang solutions. The samples were characterized by dislocation density (10⁵-10⁶ cm⁻²). The form of etched pits is triangular with Yang etch and like a honeycomb with Secco etch as observed with a scanning electron microscope (SEM). These textures of mc-Si wafers give a PL activity similar to that obtained with nanostructures of porous silicon (PS) as reported in the literature. The ultraviolet PL spectra observed with Yang etch shift to the blue-green spectrum range when applying Secco etch. In our experiments we have observed 3-5 μm diameter macro pores separated by a high density of nanowalls. These observations suggest that the origin of the PL activity are quantum dots resulting from the silicon nanocrystallites obtained after few minutes of chemical etching.     

Investigation of etch characteristics of non-polar GaN by wet chemical etching

We characterized the surface defects in a-plane GaN, grown onto r-plane sapphire using a defect-selective etching (DSE) method. The surface morphology of etching pits in a-plane GaN was investigated by using different combination ratios of H₃PO₄ and H₂SO₄ etching media. Different local etching rates between smooth and defect-related surfaces caused variation of the etch pits made by a 1:3 ratio of H₃PO₄/H₂SO₄ etching solution. Analysis results of surface morphology and composition after etching by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) demonstrated that wet chemical etching conditions could show the differences in surface morphology and chemical bonding on the a-plane GaN surface. The etch pits density (EPD) was determined as 3.1 × 10⁸ cm⁻² by atom force microscopy (AFM).     

Effect of current density on the microstructure and corrosion behaviour of plasma electrolytic oxidation treated AM50 magnesium alloy

Plasma electrolytic oxidation (PEO) of an AM50 magnesium alloy was accomplished in a silicate-based electrolyte using a DC power source. Coatings were produced at three current densities, i.e. 15 mA cm⁻², 75 mA cm⁻², and 150 mA cm⁻² and were characterised for thickness, roughness, microstructural morphology, phase composition, and corrosion resistance. Even though the 15 min treated coatings produced at higher current density levels were thicker, they showed poor corrosion resistance when compared to that of the coatings obtained at 15 mA cm⁻². Short-term treatments (2 min and 5 min) at 150 mA cm⁻² yielded coatings of thickness and corrosion resistance comparable to that of the low current density coatings. The superior corrosion resistance of the low thickness coatings is attributed to the better pore morphology and compactness of the layer.     

Surface modification of highly oriented pyrolytic graphite by reaction with atomic nitrogen at high temperatures

Dry etching of {0 0 0 1} basal planes of highly oriented pyrolytic graphite (HOPG) using active nitridation by nitrogen atoms was investigated at low pressures and high temperatures. The etching process produces channels at grain boundaries and pits whose shapes depend on the reaction temperature. For temperatures below 600 °C, the majority of pits are nearly circular, with a small fraction of hexagonal pits with rounded edges. For temperatures above 600 °C, the pits are almost exclusively hexagonal with straight edges. The Raman spectra of samples etched at 1000 °C show the D mode near 1360 cm⁻¹, which is absent in pristine HOPG. For deep hexagonal pits that penetrate many graphene layers, neither the surface number density of pits nor the width of pit size distribution changes substantially with the nitridation time, suggesting that these pits are initiated at a fixed number of extended defects intersecting {0 0 0 1} planes. Shallow pits that penetrate 1-2 graphene layers have a wide size distribution, which suggests that these pits are initiated on pristine graphene surfaces from lattice vacancies continually formed by N atoms. A similar wide size distribution of shallow hexagonal pits is observed in an n-layer graphene sample after N-atom etching.     

Chemical etching to dissolve dislocation cores in multicrystalline silicon

Multicrystalline silicon wafers are used for approximately half of all solar cells produced at present. These wafers typically have dislocation densities of up to ∼10⁶ cm⁻². Dislocations and associated impurities act as strong recombination centres for electron–hole pairs and are one of the major limiting factors in multicrystalline silicon substrate performance. In this work we have explored the possibility of using chemical methods to etch out the cores of dislocations from mc-Si wafers. We aim to maximise the aspect ratio of the depth of the etched structure to its diameter. We first investigate the Secco etch (1K₂Cr₂O₇ (0.15 M): 2HF (49%)) as a function of time and temperature. This etch removes material from dislocation cores much faster than grain boundaries or the bulk, and produces tubular holes at dislocations. Aspect ratios of up to ∼7:1 are achieved for ∼15 μm deep tubes. The aspect ratio decreases with tube depth and for ∼40 μm deep tubes is just ∼2:1, which is not suitable for use in bulk multicrystalline silicon photovoltaics. We have also investigated a range of etches based on weaker oxidising agents. An etch comprising 1I₂ (0.01 M): 2HF (49%) attacked dislocation cores, but its etching behaviour was extremely slow (<0.1 μm/h) and the pits produced had a low aspect ratio (<2:1).     

Effect of Al incorporation on the structural,morphological, optoelectronic and transport properties of PbS thin films

Doping of PbS thin films with different metal atoms produce considerable changes in structural and material properties that make them useful in the technology of thin film devices. The goal of this work is to study the effects of doping on the structural, morphological, optoelectronic and transport properties of PbS thin films as a function of Al³⁺ concentration. Thin films of pure and Al doped PbS nanoparticles are prepared on soda lime glass substrates by chemical bath deposition technique. The Al content in aqueous solution is varied from 0 to 20 mg. XRD analysis of the films revealed significant enhancement in crystallinity and crystallite size up to an optimum concentration of doping. Films are polycrystalline with crystallite size 19–32 nm, having face centered cubic structure. The optical band gap energy exhibits a decreasing trend and is shifted from 2.41 to 1.34 eV with increasing Al content. The room temperature conductivity of the as-deposited PbS films is in the range of 0.78×10⁻⁸ to 0.67×10⁻⁶(Ω cm)⁻¹ with a maximum for optimum Al content. The Al doped PbS thin film, which we synthesize with optimum Al concentration of 15 mg is found to be a most suitable material for solar control coating applications.     

Coating formation by plasma electrolytic oxidation on ZC71/SiC/12p-T6 magnesium metal matrix composite

Plasma electrolytic oxidation (PEO) of a ZC71/SiC/12p-T6 magnesium metal matrix composite (MMC) is investigated in relation to coating growth and corrosion behaviour. PEO treatment was undertaken at 350 mA cm⁻² (rms) and 50 Hz with a square waveform in stirred 0.05 M Na₂SiO₃.5H₂O/0.1 M KOH electrolyte. The findings revealed thick, dense oxide coatings, with an average hardness of 3.4 GPa, formed at an average rate of ∼1 μm min⁻¹ for treatment times up to 100 min and ∼0.2 μm min⁻¹ for later times. The coatings are composed mainly of MgO and Mg₂SiO₄, with an increased silicon content in the outer regions, constituting <10% of the coating thickness. SiC particles are incorporated into the coating, with formation of a silicon-rich layer at the particle/coating interface due to exposure to high temperatures during coating formation. The distribution of the particles in the coating indicated growth of new oxide at the metal/coating interface. The corrosion rate of the MMC in 3.5% NaCl is reduced by approximately two orders of magnitude by the PEO treatment.     

Doping and temperature dependence of inversion symmetry breaking in La2−xSrxCuO4

The doping dependence of the Raman spectra of high quality La_2−xSr_xCu^16,18O₄ polycrystalline compounds has been investigated at low temperatures. It is shown that symmetry forbidden bands peaked at ∼150 cm⁻¹, ∼280 cm⁻¹, and ∼370 cm⁻¹ are activated in the (xx/yy) polarization Raman spectra due to the local breaking of the inversion symmetry mainly at low temperatures and for doping concentrations for which the compound is superconducting. The apparent A₁-character of the activated modes in the symmetry reduced phase indicates a reduction from the D_2h to C_2v or D₂ crystal symmetries, which associates the observed modes to specific IR-active phonons with eigenvectors mainly along the c-axis. The temperature and doping dependence of this inversion symmetry breaking and the superconducting transition temperature are very similar, though the symmetry reduction occurs at significantly higher temperatures.     

Electrochemical corrosion behaviors of a-C:H and a-C:NX:H films

The a-C:H and a-C:N_X:H films were deposited onto silicon wafers using radio frequency (rf) plasma enhanced chemical vapor deposition (PECVD) and pulsed-dc glow discharge plasma CVD, respectively. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to characterize chemical nature and bond types of the films. The results demonstrated that the a-C:H film prepared by rf-CVD (rf C:H) has lower I_D/I_G ratio, indicating smaller sp² cluster size in an amorphous carbon matrix. The nitrogen concentrations of 2.9 at.% and 7.9 at.% correspond to carbon nitride films prepared with rf and pulse power, respectively.Electrochemical corrosion performances of the carbon films were investigated by potentiodynamic polarization test. The electrolyte used in this work was a 0.89% NaCl solution. The corrosion test showed that the rf C:H film exhibited excellent anti-corrosion performance with a corrosion rate of 2 nA cm⁻², while the carbon nitride films prepared by rf technique and pulse technique showed a corrosion rate of 6 nA cm⁻² and 235 nA cm⁻², respectively. It is reasonable to conclude that the smaller sp² cluster size of rf C:H film restrained the electron transfer velocity and then avoids detriment from the exchange of electrons.     

Influence of Ni deposition and subsequent N ion implantation at different substrate temperatures on nano-structure and corrosion behaviour of type 316 and 304 stainless steels

Ni thin films of 250 nm thicknesses were coated on type 304 and 316 stainless steels and post N⁺ ion implanted at 15 keV energy with a fluence of 5 × 10¹⁷ N⁺ cm⁻² at different substrate temperatures. Surface nano-structure of the samples were analysed using X-ray diffraction (XRD), atomic force microscopy (AFM) before corrosion test and scanning electron microscopy (SEM) after corrosion test. Corrosion behaviour of the samples in 1.0 M H₂SO₄ solution was investigated by means of potentiodynamic technique. Nano-structure and crystallography of the films showed the development of Ni₃N(1 1 1) and Ni₄N(2 0 0) orientations with a minimum surface roughness and grain size at 400 K substrate temperature. The highest corrosion resistance with a corrosion current of 0.01 μA cm⁻² (for SS(316)) and 0.56 μA cm⁻² (for SS(304)) was achieved in case of samples which were N⁺ ion implanted at 400 K. Results for both types of stainless steels showed good agreement and the better performance of SS(316) was attributed to the 2% molybdenum contents in the alloy composition of this type of stainless steel, which enhances the effectiveness of nitrogen in retarding the corrosion process.     

Preparation of (CdO)1−x(PbO)x and (CdS)1−x(PbS)x thin films by spray pyrolysis technique and their characterization

Mixed thin films of (CdO)_1−x(PbO)_x and (CdS)_1−x(PbS)_x (x=0.25) were prepared on glass substrates by spray pyrolysis technique for various substrate temperatures 300, 320 and 340 °C. Structural and optical properties were studied. XRD studies reveal the formation of mixed films. The substrate temperature of 340 °C seems to be critical for the formation of CdO-PbO mixed films. It is observed that (CdS)_1−x(PbS)_x mixed films were formed at all the three substrate temperatures. The direct band gap value of (CdO)_1−x(PbO)_x and (CdS)_1−x(PbS)_x mixed films is about 2.6 and 2.37 eV, respectively.     

Faujasite zeolites as solid electrolyte for low temperature fuel cells

In this work, the potential use of faujasite zeolites as a solid electrolyte material was evaluated with a particular focus on their endurance in acid environment, and on the influence played by the zeolites' chemical and textural properties on the degree of hydration and proton conductivity. Three faujasites with different initial Si/Al ratio were exposed to 6 mol dm⁻³ HCl solution and the exposure time was varied up to 7000 h for selected samples. Faujasite dealumination is a very fast process occurring mainly within 24 h of exposure. X-ray diffraction patterns show the faujasite structure was preserved, although N₂ sorption measurements indicate a possible partial collapse of the pore structure for samples dealuminated for 4500 and 7000 h.The proton conductivity of the faujasites is in the order of 10⁻⁸ S cm^-1 at 10% relative humidity, 10⁻⁶ S cm^-1 at 90% relative humidity, and 10⁻⁴ S cm^-1 for samples immersed in liquid water. The correlation between the proton conductivity and the zeolites' properties shows the predominant influence of the Al content at low relative humidity, and of the water content and micropore and mesopore volumes at high relative humidity. In particular, the expected increase of the proton conductivity with the mesopore volume at high relative humidity and for samples saturated with water was not observed.     

Inhibition of iron corrosion in 0.5 M sulphuric acid by metal cations

Corrosion inhibitors are widely used in acid solutions during pickling and descaling. Mostly organic compounds containing N, O, and S groups are employed as inhibitors. In this study, the inhibition performance of metal cations such as Zn²⁺, Mn²⁺ and Ce⁴⁺ ions in the concentration range 1-10 × 10⁻³ M has been found out. The corrosion behaviour of iron in 0.5 M H₂SO₄ in the presence of metal cations is studied using polarization and impedance methods. It is found that the addition of these metal cations inhibits the corrosion markedly. The inhibition effect is in the following order Ce⁴⁺ ? Mn²⁺ > Zn²⁺.     

Pressure dependence of spectral positions and widths of emission lines related to DJ→FJ electronic transitions in Sm ions doped into SrFCl single crystal

The pressure dependence of the peak positions and widths of the fluorescence lines corresponding to the ⁵D_J→⁷F_J electronic transitions in Sm²⁺-doped SrFCl crystals was measured at room temperature (RT) with a diamond anvil cell (DAC) and a high-pressure gas system, using silicone oil and gaseous helium as the pressure-transmitting medium, respectively. At RT and ambient pressure the electronic transitions ⁵D₀→⁷F_J (J= 0, 1, 2, 3) and ⁵D₁→⁷F_J (J=0, 1, 2) in Sm²⁺ ions yielded rather sharp spectral lines peaked at 14490, 14206, 13685, 13012 cm⁻¹ and 15823, 15533, 15012 cm⁻¹, respectively. At pressures up to 45 kbar in the DAC all these peaks shifted linearly to lower energies at the rates −2.36, −2.10, −2.43, −2.22 cm⁻¹/kbar and −2.35, −2.33, −2.47 cm⁻¹/kbar. Under purely hydrostatic gas pressure up to 7 kbar at RT the initial (normal pressure) widths of the ⁵D₀→⁷F₀, ⁵D₀→⁷F₁ and ⁵D₁→⁷F₀ lines having a Lorentzian profile (with corrected FWHM values of 1.55, 5.71 and 1.97 cm⁻¹) decreased linearly with increasing pressure at the rates −0.009(2), −0.077(3) and −0.034(2) cm⁻¹/kbar, respectively. Possible mechanisms of the observed pressure effects are discussed. For further studies of linewidth variations with the pressure, gaseous helium as a best possible high-pressure medium is strongly recommended.     

Photoluminescence properties of powder and pulsed laser-deposited PbS nanoparticles in SiO2

Thin films of lead sulfide (PbS) nanoparticles embedded in an amorphous silica (SiO₂) host were grown on Si(1 0 0) substrates at different temperatures by the pulsed laser deposition (PLD) technique. Surface morphology and photoluminescence (PL) properties of samples were analyzed with scanning electron microscopy (SEM) and a 458 nm Ar⁺ laser, respectively. The PL data show a blue-shift from the normal emission at ∼3200 nm in PbS bulk to ∼560-700 nm in nanoparticulate PbS powders and thin films. Furthermore, the PL emission of the films was red-shifted from that of the powders at ∼560 to ∼660 nm. The blue-shifting of the emission wavelengths from 3200 to ∼560-700 nm is attributed to quantum confinement of charge carriers in the restricted volume of nanoparticles, while the red-shift between powders and thin-film PbS nanoparticles is speculated to be due to an increase in the defect concentration. The red-shift increased slightly with an increase in deposition temperature, which suggests that there has been a relative growth in particle sizes during the PLD of the films at higher temperatures. Generally, the PL emission of the powders was more intense than that of the films, although the intensity of some of the films was improved marginally by post-deposition annealing at 400 °C. This paper compares the PL properties of powder and pulsed laser-deposited thin films of PbS nanoparticles and the effects of deposition temperatures.     

The inhibition of corrosion of mild steel in 0.5 M sulfuric acid solution in the presence of benzyl triphenyl phosphonium bromide

Benzyl triphenyl phosphonium bromide (BTPPB) has been evaluated as a corrosion inhibitor for mild steel in aerated 0.5 M sulfuric acid solution by galvanostatic polarization and potentiostatic polarization methods. The effect of BTPPB on the corrosion current is measured at various temperatures and concentrations. The inhibitor efficiencies, effective activation energies and heat of adsorption have been calculated. The inhibition efficiency increases with increase in inhibitor concentration to reach 99.3% for 10⁻² M. The nature of adsorption of BTPPB on the metal surface has also been examined. Probable mode of adsorption on the metal surface has been proposed using infrared spectroscopic studies. The electrochemical results have also been supplemented by surface morphological studies and quantum chemical analysis.     

Kinetic modeling of the benzyl + HO2 reaction

Benzyl is a resonantly stabilized radical that commonly occurs as an intermediate in the combustion of aromatic compounds. The bimolecular reaction of benzyl with HO₂ is important in the oxidation of toluene, especially at low to moderate temperatures, where unimolecular decomposition of the benzyl radical is slow. We show that the addition of HO₂ to the methylene site in benzyl produces a vibrationally excited benzylhydroperoxide adduct, with over 60 kcal mol⁻¹ (251 kJ mol⁻¹) of excess energy above the ground state. RRKM simulations are performed on the benzyl + HO₂ reaction, using thermochemical and kinetic parameters obtained from ab initio calculations, with variational transition state theory (VTST) for treatment of barrierless radical + radical reaction kinetics. Our results reveal that the benzyl + HO₂ reaction proceeds predominantly to the benzoxyl radical + OH at temperatures of around 800 K and above, with the production of stabilized benzylhydroperoxide molecules dominating at lower temperatures. The heat of formation of the benzyl radical is calculated as 52.5 kcal mol⁻¹ (219.7 kJ mol⁻¹) at the G3B3 level of theory, in relative agreement with other recent determinations of this value.     

The sodium diffusion in aluminium-oxide

The transport of Na through the polycrystalline ceramic arc tube of high intensity discharge lamps has been investigated. This complex process consists of several steps: solution in the ceramics, diffusion through the ceramics, leaving the bulk phase, evaporation from the surface. Among the listed processes the kinetics of the diffusion was examined in the temperature range 400-1200 °C, separately from other disturbing effects. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) were used to determine the concentration depth profiles. The obtained results confirmed that the grain boundary diffusion plays an important role in the transport process of sodium through the ceramic wall. The bulk and the grain boundary diffusion coefficients and the temperature dependencies of these transport processes have been determined. The activation energy of Na bulk diffusion is 56.5 ± 6.7 kJ/mol at 900-1200 °C, respectively the activation energies of Na grain boundary diffusion amount to 97.5 ± 21.6 kJ/mol in the temperature range 700-1100 °C and 7.7 ± 4.0 × 10⁻² kJ/mol at 400-700 °C. The preexponential factor of the bulk diffusion was found to be D_o = 5.1 × 10⁻¹⁵ ± 9.5 × 10⁻¹⁷ cm²/s in the temperature range 900-1200°C, whereas the preexponential factors of grain boundary diffusion are D_o = 1.1 × 10⁻¹⁰ ± 1.1 × 10⁻¹¹ cm²/s at 700-1100 °C and D_o = 7.5 × 10^-15 ± 1.5 × 10⁻¹⁷ cm²/s at 400-700 °C.     

Surface oxidation of NiCo alloy: A comparative X-ray photoelectron spectroscopy study in a wide pressure range

Oxidation of NiCo alloy has been studied under two pressure regimes, 5 × 10⁻¹⁰ and 5 × 10⁻¹ bar, by X-ray photoelectron spectroscopy (XPS). The aim of this work is to investigate the synergetic effect between the two alloy components during the initial stages of oxidation. The results showed that at low oxygen pressure, segregation and preferential oxidation of cobalt takes place, while oxidation of nickel is largely suppressed. The species dominating the surface is CoO but small amount of metallic cobalt still remains even after prolonged oxidation at 670 K. At 0.5 bar O₂ pressure, alloy oxidation was found to be temperature depended. From 420 K to 520 K, cobalt is completely transformed to CoO and the Ni:Co atomic ratio at the surface approaches a minimum, similar to the observations at low pressure regime. However, at higher temperatures (from 520 K to 720 K), nickel is re-segregated on the surface, in the expense of cobalt, while CoO is further oxidized to Co₃O₄. At this temperature range formation of mixed Ni-Co-O spinel-like oxides is probable as supported by the characteristic modifications of the Ni 2p_3/2 photoelectron peak and the increase of the Ni:Co atomic ratio.     

High-temperature electrical properties of magnesiowustite Mg1 − xFexO and spinel Fe3 − x − yMgxCryO4 ceramics

Phase relationships, thermal expansion and electrical properties of Mg_1 − xFe_xO (x = 0.1-0.45) cubic solid solutions and Fe_{3 − x − y}Mg_xCr_yO_4 ± δ (x = 0.7-0.95; y = 0 or 0.5) spinels were studied at 300-1770 K in the oxygen partial pressure range from 10 Pa to 21 kPa. Increasing iron content enlarges the spinel phase stability domain at reduced oxygen pressures and elevated temperatures. The total conductivity of the spinel ceramics is predominantly n-type electronic and is essentially p(O₂)-independent within the stability domain. The computer simulations using molecular dynamics technique confirmed that overall level of ion diffusion remains low even at high temperatures close to the melting point. Temperature dependencies of the total conductivity in air exhibit a complex behavior associated with changing the dominant defect-chemistry mechanism from prevailing formation of the interstitial cations above 1370-1470 K to the generation of cation vacancies at lower temperatures, and with kinetically frozen cation redistribution in spinel lattice below 700-800 K. The average thermal expansion coefficients of the spinel ceramics calculated from dilatometric data in air vary in the range (9.6-10.0) × 10^− 6 K^− 1 at 300-500 K and (13.2-16.1) × 10^− 6 K^− 1 at 1050-1370 K. Mg_1 − xFe_xO solid solutions undergo partial decomposition on heating under oxidizing and mildly reducing conditions, resulting in the segregation of spinel phase and conductivity decrease.