Formation of Pt-C films by ion beam assisted deposition for the application of suppression thermo-electron emission

Platinum and carbon were deposited onto the surface of molybdenum grids simultaneously by ion beam assisted deposition. The structure of the Pt-C films was studied by XRD and Raman spectroscopy. The XRD results showed that Pt exhibited mixed strong (1 1 1) and weak (2 0 0) orientations. The Raman spectra showed that the carbon existed in the form of graphite-like phase. Electron emission characteristics from the Mo grid with and without Pt-C films were measured using analogous diode method. The results showed that electron emission from the Mo grid coated with Pt-C films was much less than that from the Mo grid without Pt-C films. The obtained results demonstrated that the Pt-C films are effective grid-coating materials for the application of suppression thermo-electron emission.     

Study on the composition and phase change of BaO/Hf/Mo under high temperature

Hafnium films were deposited onto the molybdenum grids by radio-frequency magnetron sputtering from an Hf target in argon gas. Emission current of Mo grids coated with and without Hf film during the lifetime testing, which were contaminated by active electron-emission substances (i.e. Ba or BaO) from the cathode, were measured using an analogous-diode method. The results show that emission current from the Mo grid coated with Hf film is much less than that from the Mo grid without Hf film. The BaO layer was deposited on Hf/Mo substrates by chemical method in order to simulate the working conditions of the grids contaminated by electron-emission substances from the cathode. The suppression mechanism of electron emission from the Mo grid coated with Hf film is discussed according to the experimental results and the calculation of the reaction free energy.     

Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes

We have studied Au/n-GaN Schottky barrier diodes. GaN surfaces have been prepared by cleaning in HCl and (NH₄)₂S prior to metal deposition. The zero-biased barrier heights and ideality factors obtained from the current-voltage characteristics differ from diode to diode, although all the samples were prepared identically. The statistical analysis for the reverse bias C-V data yielded mean value of (1.35±0.04) eV for Schottky barrier height of HCl treated sample and (1.20±0.03) eV for (NH₄)₂S sample, where 9 dots were considered from each cleaning method. It was found that the barrier height values obtained from the C⁻²-V (1.43 eV) and I-V characteristics (0.89 eV) are different from each other by 0.54 eV. The inhomogeneous barrier heights were found to be related to the effect of the high series resistance on diode parameters (Akkiliç et al., 2004) [1].     

Enhanced two temperature modeling of ultrashort laser ablation for the investigation of thermionic emission characteristics

Characteristics of thermionic electron emission during femtosecond laser ablation of gold film are studied numerically. For the rigorous calculation of electron and lattice temperatures, an enhanced two-temperature model with transient thermal and optical properties is developed and it is demonstrated that the model predicts the damage threshold fluences closely matching experimental data. From the calculated electron emission characteristics, quantum efficiency and electron current density are estimated.     

Study of pyrolytic carbon films for non-emitting grid applications

Pyrolytic carbon films were prepared on a hot substrate inside UHV system back-filled with 6 × 10⁻⁵ Torr of CH₄. The resulting films showed two different chemical states of carbon; carbides formed on W and Ta substrates and graphitic carbon layers were yound on ?. Ir substrate. Alter BaO deposition, the carbides showed a work function too low to be useful as grids. On the other hand, the work function of pyrolytic carbon films were high both before and after Ba or BaO coverage. Study of the degradation mechanisms of carbon films, formed by e-bean techniques, however, showed that they also reacted rapidly with W and T₂ resulting in a carbide formation. Thus it suggested that in the application of pyrolytic graphite grids, contact with carbide-forming metals should be avoided. Interaction of the pyrolytic carbon with BaO also resulted in the removal of carbon. However, this “leeching” phenomenon projects a life for pyrolytic graphite grids much longer than actually observed in the tube tests. The diffusion of Ba and BaO through pyrolytic carbon layer was evident in this workm but its precise relation to life failure rate is not yet understood.     

Schottky metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted deposition

A binary alloy Schottky barrier diode on zinc oxide (ZnO) was developed using the combinatorial ion beam-assisted deposition system. The compositional fraction of the binary alloy was continuously varied using the composition-spread technique, to control the Schottky barrier height. After metal deposition, patterned Schottky diodes were fabricated on a ZnO single-crystal substrate. Pt-Ru alloy was selected from the work function viewpoint. Our experiments showed that the compositional fraction of the Schottky binary alloys changed continuously as designed and the Schottky barrier heights measured by current-voltage (I-V) measurements increased with increasing Pt content. Maximum barrier height difference for ZnO was 137 meV. Using ion beam deposition in parallel with the combinatorial system showed that the Schottky barrier heights for ZnO can be controlled by binary metal alloying.     

Improved optical response and photocatalysis for N-doped titanium oxide (TiO2) films prepared by oxidation of TiN

In order to improve the photocatalytic activity, N-doped titanium oxide (TiO₂) films were obtained by thermal oxidation of TiN films, which were prepared on Ti substrates by ion beam assisted deposition (IBAD). The dominating rutile TiO₂ phase was found in films after thermal oxidation. According to the results of X-ray photoelectron spectroscopy (XPS), the residual N atoms occupied O-atom sites in TiO₂ lattice to form TiON bonds. UV-vis spectra revealed the N-doped TiO₂ film had a red shift of absorption edge. The maximum red shift was assigned to the sample annealed at 750 °C, with an onset wavelength at 600 nm. The onset wavelength corresponded to the photon energy of 2.05 eV, which was nearly 1.0 eV below the band gap of pure rutile TiO₂. The effect of nitrogen was responsible for the enhancement of photoactivity of N-doped TiO₂ films in the range of visible light.     

Ion-beam synthesis and growth mechanism of diamond-like materials

Opposite to most other deposition methods, the dominating nucleation and growth mechanism during ion-beam deposition of energetic ions in the range between 10 eV and 10 keV occurs in a region of a few nanometers below the surface of the growing film. This process is called ‘subplantation’ – emphasizing the implantation of ions into a subsurface region. Ordering and phase formation is a result of the interaction of the deposited ions with the solid state that takes place within the short time scale of femto- and picoseconds. This extreme non-equilibrium process can result in metastable amorphous or crystalline structures. This review will present several examples of the influence of the deposition parameters on the properties of diamond-like materials synthesized using mass-selected ion-beam deposition. Furthermore, several existing models of the deposition process will be presented and critically discussed. Received: 11 November 2002 / Accepted: 12 November 2002 / Published online: 4 April 2003 RID="*" ID="*"Corresponding author. Fax: +49-551/39-4493, E-mail: carsten.ronning@phys.uni-goettingen.de     

Study on the orientation of silver films by ion-beam assisted deposition

Low energy ion beam assisted deposition (IBAD) was employed to prepare Ag films on Mo/Si (100) substrate. It was found that Ag films deposited by sputtering method without ion beam bombardment were preferred (111) orientation. When the depositing film was simultaneously bombardment by Ar⁺ beam perpendicular to the film surface at ion/atom arrival ratio of 0.18, the prepared films exhibited weak (111) and (200) mixed orientations. When the direction of Ar⁺ beam was off-normal direction of the film surface, Ag films showed highly preferred (111) orientation. Monte Carlo method was used to calculate the sputtering yields of Ar⁺ ions at various incident and azimuth angles. The effects of channeling and surface free energy on the crystallographic orientation of Ag films were discussed.     

Injection of holes at indium tin oxide/dendrimer interface: An explanation with new theory of thermionic emission at metal/organic interfaces

The traditional theory of thermionic emission at metal/inorganic crystalline semiconductor interfaces is no longer applicable for the interface between a metal and an organic semiconductor. Under the assumption of thermalization of hot carriers in the organic semiconductor near the interface, a theory for thermionic emission of charge carriers at metal/organic semiconductor interfaces is developed. This theory is used to explain the experimental result from Samuel group [J.P.J. Markham, D.W. Samuel, S.-C. Lo, P.L. Burn, M. Weiter, H. Baessler, J. Appl. Phys. 95 (2004) 438] for the injection of holes from indium tin oxide into the dendrimer based on fac-tris(2-phenylpyridyl) iridium(III).     

Thin zirconium nitride films prepared by plasma-enhanced CVD

Thin films of zirconium nitride have been deposited at temperatures as low as 573 K by PECVD using tetrakis(diethylamido)zirconium, Zr[N(C₂H₅)₂]₄ as precursor. The influence of the various experimental parameters on film properties and deposition rates has been studied. Under most experimental conditions hard coatings of good adherence and low carbon contamination resulted.     

Numerical analysis of gate leakage current in AlGaN Schottky diodes

We studied theoretically the influence of the tunneling current on the leakage current in AlGaN Schottky diodes. It is shown that the most important conductance mechanism in these structures is the tunneling. The thermionic emission has lower influence on the total current practically throughout the whole reverse bias range and doping concentrations studied. For high doping concentrations we found very slow temperature dependence of the diode current.     

Formation of hafnium carbide thin films by plasma enhanced chemical vapor deposition from bis(η-cyclopentadienyl)dimethylhafnium as precursor

Thin films of hafnium carbide have been deposited by plasma-enhanced chemical vapor deposition using bis(-cyclopentadienyl)dimethylhafnium, Cp₂ Hf(CH₃)₂, as precursor in 13.56 MHz planar reactor. The influence of the various experimental parameters on film properties has been studied. The carbon content ranged from 11 to 40 weight % and increased with the deposition rate. The film hardness varied between 1300 and 2000 HK. Depending on the carbon content and power delivered in the discharge, the film resistivity and film density ranged from 271 to 10⁵ ·cm and from 3.4 to 10.4 g/cm³, respectively, and the film composition varied from HfC to hafnium containing a-C: H films.     

The dependence of barrier height on temperature for Pd Schottky contacts on ZnO

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements have been performed on Pd/ZnO Schottky barrier diodes in the range 60-300 K. The room temperature values for the zero bias barrier height from the I-V measurements (Φ_I-V) was found to be 0.52 eV and from the C-V measurements (Φ_C-V) as 3.83 eV. From the temperature dependence of forward bias I-V, the barrier height was observed to increase with temperature, a trend that disagrees with the negative temperature coefficient for semiconductor material. The C-V barrier height decreases with temperature, a trend that is in agreement with the negative temperature coefficient of semiconductor material. This has enabled us to fit two curves in two regions (60-120 K and 140-300 K). We have attributed this behaviour to a defect observed by DLTS with energy level 0.31 eV below the conduction band and defect concentration of between 4×10¹⁶ and 6×10¹⁶ cm⁻³ that traps carriers, influencing the determination of the barrier height.     

Enhanced corrosion resistance of Zr coating on biomedical TiNi alloy prepared by plasma immersion ion implantation and deposition

Zirconium film was prepared on TiNi alloy by plasma immersion ion implantation and deposition (PIIID) technique to enhance its corrosion resistance and prolong its working lifetime. The atomic force microscopy (AFM) results show that the film was relatively smooth with the root mean square roughness being 9.166 nm. The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results indicate that the implant element of Zr was oxidation partialness. The potentiodynamic polarization measurements in the Hank's solution at 37 °C show that the corrosion resistance of the alloy was improved by the Zr coating film and the atomic absorption spectrometry (AAS) tests also indicate that Ni ion concentration released from the substrate in the Hank's solution after the polarization test was reduced greatly, in comparison to the unmodified TiNi alloy sample.     

Current-temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium

Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively evaporated onto Ge (1 1 1) that was ICP etched at a rate of 60 Å per minute for three or ten minute intervals. Although plasma cleaning is known to introduce defects that were observed with DLTS, the diodes exhibited excellent current-voltage characteristics when cooled down to 80 K. Current-temperature (IT) scans that were recorded from 20 K up to 300 K after cooling under reverse bias showed no effect of recombination/generation (RG). On the other hand, IT scans that were recorded after cooling under zero or forward bias clearly exhibited RG effects in the 100-240 K temperature range. This effect was found to be completely reversible. In addition, ICP etching leads to superior devices when compared to devices manufactured by RF sputter deposition.     

Hard carbon coatings deposited on steel

We report results of steel substrates coated with hard amorphous carbon and with diamond films. In order to enhance the adherence to the substrate, steel substrates were pretreated by means of a silicon ion beam. Raman spectroscopy was used to analyze the structure of silicon interface while the elastic recoil detection analysis method was applied to determine their composition and thickness. The a-C adherence to the substrate and hardness were also tested. The diamond films were observed by SEM.     

Pulsed laser deposition of polyhydroxybutyrate biodegradable polymer thin films using ArF excimer laser

We demonstrated the pulsed laser deposition (PLD) of high quality films of a biodegradable polymer, the polyhydroxybutyrate (PHB). Thin films of PHB were deposited on KBr substrates and fused silica plates using an ArF (λ = 193 nm, FWHM = 30 ns) excimer laser with fluences between 0.05 and 1.5 J cm⁻². FTIR spectroscopic measurements proved that at the appropriate fluence (0.05, 0.09 and 0.12 J cm⁻²), the films exhibited similar functional groups with no significant laser-produced modifications present. Optical microscopic images showed that the layers were contiguous with embedded micrometer-sized grains. Ellipsometric results determined the wavelength dependence (λ ∼ 245-1000 nm) of the refractive index and absorption coefficient which were new information about the material and were not published in the scientific literature. We believe that our deposited PHB thin films would have more possible applications. For example to our supposal the thin layers would be applicable in laser induced forward transfer (LIFT) of biological materials using them as absorbing thin films.     

Thin films of magnesium oxide prepared by plasma-enhanced chemical vapour deposition

Thin films of magnesium oxide have been deposited on glass, quartz, stainless steel, and nickel by plasma enhanced chemical vapour deposition using 2,2,6,6-tetramethyl-heptanedionato-3,5-magnesium(II) (Mg(thd)₂) as precursor. The films show (100)-orientation when deposited at temperatures 673 K. The influence of experimental parameters on deposition rate and film properties has been studied.On leave from the Beijing Solar Energy Research Institute, Beijing, China     

Platelet adhesion on phosphorus-incorporated tetrahedral amorphous carbon films

The haemocompatibility of phosphorus-incorporated tetrahedral amorphous carbon (ta-C:P) films, synthesized by filtered cathodic vacuum arc technique with PH₃ as the dopant source, was assessed by in vitro platelet adhesion tests. Results based on scanning electron microscopy and contact angle measurements reveal that phosphorus incorporation improves the wettability and blood compatibility of ta-C film. Our studies may provide a novel approach for the design and synthesis of doped ta-C films to repel platelet adhesion and reduce thrombosis risk.