Wavelength dependence of transient photovoltage polarity

Using pulsed laser with different wavelengths, transient photovoltage (TPV) is investigated for the sandwich device of indium tin oxide (ITO)/poly (2-methoxy-5-(2′-ethylhexyloxy)-1, 4-phenylenevinylene) (MEH-PPV) (500 nm)/Al. At laser wavelength of 500 nm, a 0.1 millisecond negative TPV signal appears followed by a positive one lasting 40-80 milliseconds. With increasing laser wavelength, the negative signal becomes weak and disappears when wavelengths λ?560 nm. This work demonstrates the process of exciton dissociation at the interface between ITO and MEH-PPV. A new method measuring the relative dissociation rate at the interface between polymer and electrode is introduced. It is estimated that the dissociation rate at Al interface is 4-8 times of that at the ITO interface.     

Photoluminescence studies on porous silicon/polymer heterostructure

Hybrid devices formed by filling porous silicon with MEH-PPV or poly [2-methoxy-5(2-ethylhexyloxy-p-phenylenevinylene)] have been investigated in this work. Analyses of the structures by scanning electron microscopy (SEM) demonstrated that the porous silicon layer was filled by the polymer with no significant change of the structures except that the polymer was infiltrated in the pores. The photoluminescence (PL) of the structures at 300 K showed that the emission intensity was very high as compared with that of the MEH-PPV films on different substrates such as crystalline silicon (c-Si) and indium tin oxide (ITO). The PL peak in the MEH-PPV/porous silicon composite structure is found to be shifted towards higher energy in comparison with porous silicon PL. A number of possibilities are discussed to explain the observations.     

Enhanced quantum efficiency in polymer electroluminescence devices by inserting an ultrathin PMMA layer

We report an increase of electroluminescence (EL) efficiency by about two times for poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV) based polymer light-emitting diodes (PLED) while employing an ultrathin layer of poly(methyl methacrylate) (PMMA) between a hole injection layer, polyethylenedioxythiophenne:polystyrenesulfonate (PEDOT:PSS) and an emitting layer, MEH-PPV. The peak power efficiency of the control device (ITO/MEH-PPV/LiF/Al) was 0.42 lm/W with a current efficiency of 0.66 cd/A. The device with the optimized thickness of PMMA interface layer shows the highest power efficiency of 1.15 lm/W at a current efficiency exceeding 1.83 cd/A. The significant improvement in the device performance is attributed to the decrease of holes injection and the promotion of electrons injection, which cause the balance of the carriers within the emitting layer.     

Enhanced electrical stability of flexible indium tin oxide films prepared on stripe SiO2 buffer layer-coated polymer substrates by magnetron sputtering

The electrical stability of flexible indium tin oxide (ITO) films fabricated on stripe SiO₂ buffer layer-coated polyethylene terephthalate (PET) substrates by magnetron sputtering was investigated by the bending test. The ITO thin films with stripe SiO₂ buffer layer under bending have better electrical stability than those with flat SiO₂ buffer layer and without buffer layer. Especially in inward bending text, the ITO thin films with stripe SiO₂ buffer layer only have a slight resistance change when the bending radius r is not less than 8 mm, while the resistances of the films with flat SiO₂ buffer layer and without buffer layer increase significantly at r = 16 mm with decreasing bending radius. This improvement of electrical stability in bending test is due to the small mismatch factor α in ITO-SiO₂, the enhanced interface adhesion and the balance of residual stress. These results indicate that the stripe SiO₂ buffer layer is suited to enhance the electrical stability of flexible ITO film under bending.     

Improved electrical and optical properties of MEH-PPV light emitting diodes using Ba buffer layer and porphyrin

It has been found that insertion of a thin Ba buffer layer between the Al electrode and the MEH-PPV layer results in a significantly higher current density in ITO/MEH-PPV/Al polymer light-emitting diodes due to a reduction of the potential barrier at the cathode-polymer interface. The photoluminescence is found to increase with the addition of porphyrin-containing platinum as the central atom, showing that some of the triplet excitons decay radiatively as a result of mixing porphyrin.     

MEH-PPV/ZnO纳米晶无机有机复合电致发光器件的研究

以Ⅱ一Ⅵ族无机半导体ZnO纳米颗粒为电子传输层,MEH-PPV为空穴传输层兼发光层,得到的电致发光器件比单层MEH-PPV器件的发光亮度和效率都明显提高。器件结构为ITO／MEH-PPV／ZnO／Al的电致发光光谱同单层PPV器件的光谱出现了不同,在620nm处出现了一个小的发光峰,应该是ZnO的发光。另外,双层结构器件的启亮电压由单层器件的9V降到了4V左右。由I-V曲线及发光光谱可判断出发光区域应在MEH-PPV／ZnO界面处,并且复合区域可能随着电压的变化而变化。     

体异质结有机太阳能电池性能提高的研究

制备了四种不同结构的有机太阳能电池器件,器件1 ITO/LiF/PEDOT∶PSS/MEH-PPV/C₆₀/Al、器件2 ITO/PEDOT∶PSS/MEH-PPV/C₆₀/Al、器件3 ITO/LiF/PEDOT∶PSS/MEH-PPV∶C₆₀/C₆₀/Al和器件4 ITO/PEDOT∶PSS/MEH-PPV∶C₆₀/C₆₀/Al。测量了它们的电流－电压特性,结果显示在ITO和PEDOT∶PSS之间插入一薄层LiF使得器件性能得到较大提高。其器件1的J_SC和FF比器件2的提高了74%和31%; 器件3的J_SC比器件4的提高了约40%。这主要是由于LiF层有效地抑制了空穴向阳极的传输,并且LiF层在ITO和PEDOT:PSS之间形成了良好的界面特性。因此,这种结构上的改进有效地提高了有机太阳能电池的性能。     

MEH-PPV/SiO_2异质结发光机理和非晶SiO_2二次特性的研究

在薄膜电致发光中采用有机聚合物MEH-PPV和无机半导体SiO_2复合制成异质结发光器件,利用SiO_2的加速、倍增和离化的二次特性,实现了固态阴极射线发光.结构为ITO/SiO_2/MEH-PPV/SiO_2/Al的发光器件,其电致发光光谱的显著特征是有两个发光谱带.光谱中除了波长较长(峰值为583 nm)的MEH-PPV的激子发光谱外,还观察到了波长较短(峰值为403 nm)的蓝色发光谱,并且长短波的发光强度随着电压的不同而变化.电压较低时,只有长波光发射.当电压较高时,只有短波光存在.这种有两个谱带的发光是固态阴极射线发光的独特标志,它是一种全新的激发方式,引发出发光学中一些新而重要的问题.固态阴极射线发光理论的重要方面之一就足SiO_2的二次特性.文章研究了固态阴极射线发光动力学问题,高电场下SO_2二次特性及厚度对二次特性的影响.     

聚合物发光二极管中的负电容效应

采用交流阻抗谱技术,研究了以共轭聚合物(poly［2-methoxy,5-(2′-ethylhexoxy)-1,4-phenylenevinylene］)(MEH-PPV)为发光层,以带有胺基的聚芴共聚物poly［(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)］ (PF-NR₂)为电子传输层的发光二极管的交流响应特性. 对于结构为ITO/P 关键词： 2')" href="#">PF-NR₂ 聚合物发光二极管 交流阻抗谱 负电容效应     

掺杂DCJTB聚合物电化学池（LEC）的发光性质

通过在聚合物电化学池(LEC)发光器件的发光材料MEH-PPV中掺杂红光染料DCJTB,对LEC器件的发光性质进行研究。基于器件结构为ITO/MEH-PPV PEO LiCF3SO3/Al的薄膜LEC器件,其电致发光峰在570nm左右,通过在MEH-PPV与PEO的混合膜中掺杂不同比例的红光染料DCJTB,随着掺杂比例的增加,器件的发光峰由570nm向红光波段移动,通过控制DCJTB的掺杂比例制备了发光峰在570~650nm连续变化的LEC电致发光器件。对其分析认为从LEC主体发光聚合物MEH-PPV到染料DCJTB间发生了良好的能量传递。     

Surface-modified lead–zirconium-titanate system for solution-processed ferroelectric-gate thin-film transistors

We propose the use of a La₂O₃ (LO) film as the capping layer for improvement of a semiconductor/insulator interface in a solution-processed indium–tin–oxide (ITO) ferroelectric-gate thin-film transistor (FGT) device. It is demonstrated that the LO layer acts as a good barrier film not only for preventing the interdiffusion between the ITO semiconductor and lead–zirconium-titanate (PZT) insulator layers, but also for stabilizing the PZT surface structure. The fabricated FGT device exhibited high I _on/I _off, large M _w, high μ _FE and improved retention time of about 10⁹, 3.5 V, 7.94 cm²?V^?1?s^?1 and 1 day, respectively, which are comparable to or better than those obtained with FGTs fabricated by means of conventional vacuum processes. We also point out that the key origin of the interface improvement is likely due to the incorporation of La into the PZT system, forming a La surface-modified PZT system which is more stable than the pure PZT in terms of Pb volatility and formation of oxygen vacancies.     

ZnSe(ZnS)纳米晶与MEH-PPV的共掺有机电致发光器件

采用水相法合成核壳结构ZnSe/ZnS 纳米晶,经X射线衍射(XRD)分析和透射电子显微镜(TEM)表征,证实所制备的样品为立方晶型闪锌矿结构ZnSe/ZnS量子点。按照一定的质量比将ZnSe/ZnS 纳米晶和有机聚合物MEH-PPV(poly ) 共掺并将其作为发光层,分别制备单层和多层有机电致发光器件,结构为ITO/MEH-PPV∶ZnSe(ZnS)(50 nm)/Al和 ITO/PEDOT∶PSS(70 nm)/ MEH-PPV∶ZnSe(ZnS)(50 nm)/BCP(15 nm)/Alq₃(12 nm) /LiF(0.5 nm)/Al。实验结果表明,多层发光器件的发光特性与单层器件不同,工作电压的增大使其发光峰发生了明显的蓝移。     

有机薄膜晶体管驱动聚合物发光二极管研究

研究了有机薄膜晶体管(OTFT)与聚合物发光二极管(PLED)集成制备技术和相关物理问题.OTFT结构为栅极钽(Ta)/绝缘层五氧化二钽(Ta2O5)/有源层并五苯(Pentacene)/源漏极金(Au);PLED器件结构为ITO/PEDOT:PEO(polyethylene oxide)/P-PPV或MEH-PPV/Ba/Al.PEDOT:PEO,P-PPV和MEH-PPV薄膜层均采用丝网印刷技术,实现了OTFT与PLED器件集成发光.其中OTFT器件的阈值电压为-7V,迁移率为0.91cm2/(V.s),并通过OTFT驱动得到以P-PPV和MEH-PPV为发光层的PLED器件的发光亮度分别达到124和26cd/m2,电流效率分别为12.4和1.1cd/A.利用丝网印刷技术可以有效控制高分子薄膜的沉积区域,实现功能器件的集成.     

溶剂效应对聚苯撑乙烯掺杂苝二酰亚胺太阳电池性能的影响

研究了不同溶剂对2-甲氧基-5-(2-乙基己氧基)-1，4-对苯撑乙烯(MEH-PPV): N,N′-二(1-乙基丙基)-3，4，9，10-苝四羧酸二亚酰胺(EP-PTC)复合膜的形貌及其对以MEH-PPV: EP-PTC复合膜为活性层的太阳电池性能的影响.结果表明：非芳香性溶剂不利于MEH-PPV与EP-PTC的相容，MEH-PPV与EP-PTC两相间形成微米尺寸(0.5—5 μm)的相分离，因而以MEH-PPV: EP-PTC复合膜为活性层的太阳电池中的电荷分离效率较低，进而电池的能量转换效率较低.而 关键词： 太阳电池 相分离 能量转换效率     

高分子发光二极管载流子注入过程研究

采用交流阻抗谱，电容-电压，电容-频率等实验方法，研究了共轭高分子MEH-PPV(poly［2-methoxy，5-(2-ethylhexoxy)-1，4-phenylene vinylene］)发光二极管的载流子注入过程.对于结构为ITO/PEDOT/MEH-PPV/Ba/Al的发光器件，实验结果表明，电极界面是欧姆接触的，载流子的注入是非平衡的，器件薄膜中存在陷阱容易俘获注入电荷，形成空间电荷区，陷阱密度约为3.75×10¹⁶cm^-3. 关键词： 高分子发光二极管 交流阻抗谱 cole-cole图 载流子注入     

Blue shift in the luminescence spectra of MEH-PPV films containing ZnO nanoparticles

Luminescence properties of nanocomposites consisting of ZnO nanoparticles in a conjugated polymer, poly [2-methoxy-5-(2′-ethyl hexyloxy)-phenylene vinylene] (MEH-PPV), were investigated. Photoluminescence measurements reveal a blue shift in the emission spectrum of MEH-PPV upon incorporation of ZnO nanoparticles into the polymer film while the emission is increasingly quenched with increasing ZnO concentration. In contrast, the structure of the polymer and its conjugation length are not affected by the presence of ZnO nanoparticles (up to 16 wt% ZnO) as revealed by Raman spectroscopy. The blue shift and photoluminescence quenching are explained by the separation of photogenerated electron-hole pairs at the MEH-PPV/ZnO interface and the charging of the nanoparticles.     

Amplified spontaneous emission from metal-backed poly[2-methoxy-5-(2’-ethylhexyloxy)-1,4-phenylenevinylene] film

We investigate the amplified spontaneous emission (ASE) from an Ag-backed poly[2-methoxy-5-(2’-ethylhexyloxy)1,4-phenylenevinylene] (MEH-PPV) film with different film thicknesses.The ASE characteristics of Ag-backed MEHPPV films with different thicknesses show that increasing the film thickness can reduce the influence of the Ag cladding.The threshold,the gain,and the loss of the device with a thickness of 170 nm are comparable to those of a metal-free device.The lasing threshold of this device is about 7.5 times that of a metal-free device.Our findings demonstrate that Ag-backed MEH-PPV film with an appropriate thickness can still be a good polymer gain material for the fabrication of solid-state lasers.     

Reduction of guided waves in ITO/glass interface of white organic light emitting diodes (WOLEDs): Layer optimization

In this paper, our main purpose is to reduce Total Internal Reflection (TIR) phenomenon that is happening at Indium Tin Oxide (ITO, n_ito = 1.8 + 0.01i) and Glass (n_glass = 1.51) interface in WOLED to achieve higher output power. In normal WOLED because of higher refractive index contrast between ITO and Glass, guided waves usually limited into ITO layer and approximately 50% of generated light is trapped into ITO layer. Here, we tried to reduce this portion of trapped light by using 12-fold quasi-photonic crystal in mentioned interface. With some gentle changes in 12-folds structure, we could reduce TIR in this interface to less than 9%. Also, far field results before and after adding the structure were studied, which represents success of this idea and will open a new insight to lightning applications.     

Enhanced Efficiency of Polymer Light-Emitting Diodes by Dispersing Dehydrated Nanotube Titanic Acid in the Hole-buffer Layer

Efficiency of polymer light-emitting diodes (PLEDs) with poly(2-methoxy-5-(2-ethyl hexyloxy)-p-phenylene vinylene) (MEH-PPV) as an emitting layer was improved if a dehydrated nanotubed titanic acid (DNTA) doped hole-buffer layer polyethylene dioxythiophene (PEDOT) was used. Photoluminescence (PL) and Raman spectra indicated a stronger interaction between DNTA and sulfur atom in thiophene of PEDOT, which suppresses the chemical interaction between vinylene of MEH-PPV and thiophene of PEDOT. The interaction decreases the defect states in an interface region to result in enhancement in device efficiency, even though the hole transporting ability of PEDOT was decreased.     

基于MEH-PPV/ZnSe纳米复合器件的电致发光特性的研究

以巯基乙酸作为稳定剂在水相中制备了ZnSe纳米晶,用X射线粉末衍射(XRD)和X射线光电子能谱(XPS)对其进行了表征。用表面活性剂将ZnSe纳米晶从水相中转移到有机相中,使其与聚合物MEH-PPV复合作为发光层,制备了多层电致发光器件Glass/ITO/MEH-PPV∶ZnSe/BCP/Alq₃。对ZnSe纳米晶和MEH-PPV薄膜的光致发光谱及其吸收光谱的比较表明ZnSe纳米晶和MEH-PPV之间存在着能量传递,这是导致纳米复合薄膜的光致发光光谱和电致发光光谱存在差异的原因之一。文章对其在光激发和载流子注入条件下的不同发光机制进行了讨论。通过对器件的光电特性进行研究,发现ZnSe纳米晶发光的比例随着外加电压的增加而增加,而且器件的I-V特性基本上符合二极管的特性。