Deep level transient spectroscopy in Hg1−xCdxTe

We report the application of Deep Level Transient Spectroscopy (DLTS) in Hg_1-xCd_xTe, demonstrating for the first time the utilization of DLTS techniques in a narrow band-gap semiconductor, E_g < 0.40 eV. DLTS measurements performed on an n⁺-p diode with E_g (x=0.21, T=30 K) =0.096 eV have identified an electron trap with an energy of E_v + 0.043 eV and a hole trap at E_v + 0.035 eV. Measurements of trap densities, capture cross sections, and the close proximity of the electron and hole trap locations within the band-gap suggest that DLTS may be observing both the electron and hole capture at a single Shockley-Read recombination center. The trapping parameters measured by DLTS predict minority carrier lifetime versus temperature data to be comparable with the experimentally measured values.     

Infrared absorption in In-doped degenerate Hg1−xCdxTe

The infrared absorption spectra, including absorption edge spectra and below-gap absorption spectra, were investigated both experimentally and theoretically for an In-doped degenerate HgCdTe sample with an electron concentration N_e = 7.0 × 10¹⁷ cm^-3 for wavelengths 7 μm<L<17 μm at the temperatures 77 K <T< 300 K. The possibility of applying free-carrier absorption theory developed for InSb to HgCdTe is discussed. It is concluded that the virtual crystal approximation works fairly well for HgCdTe and that the two-mode Callen effective charge should be used in the calculation of free-carrier absorption coefficients to account for the two-mode character of the optical phonons of HgCdTe. Good agreement between theory and experiment in the below-gap absorption spectra was obtained. The concentration of ionized impurities was found to be N_imp=3.4 × 10¹⁸ cm^-3. A good account of the behaviour of absorption edge in the light of Burstein-Moss effect has also been given.     

Modification of Cd1−xMnxTe crystal surface layers by nanopulsed laser irradiation

The surface modification of Cd_1−xMn_xTe (x = 0-0.3) crystal wafers under pulsed laser irradiation has been studied. The samples were irradiated by a Q-switched ruby laser with pulse duration of 80 ns. Optical diagnostics of laser-induced thermal processes were carried out by means of time-resolved reflectivity measurements at wavelengths 0.53 and 1.06 μm. Laser irradiation energy density, E varied in the range of 0.1-0.6 J/cm². Morphology of irradiated surface was studied using scanning electron microscopy. The energy density whereby the sample surface starts to melt, depends on Mn content and is equal to 0.12-0.14 J/cm² for x ≤ 0.2, in the case of x = 0.3 this value is about 0.35 J/cm². The higher Mn content leads to higher melt duration. The morphology of laser irradiated surface changes from a weakly modified surface to a single crystal strained one, with an increase in E. Under irradiation with E in the range of 0.21-0.25 J/cm², the oriented filamentary crystallization is observed. The Te inclusions on the surface are revealed after the irradiation of samples with small content of Mn.     

Coupled subband-phonon resonances in the far-infrared reflection from Hg1−xCdxTe surfaces

Subband resonances coupled to the lattice polarization are observed in the far-infrared reflection from surfaces of Hg_1?xCd_xTe. A substantial enhancement of signal amplitude occurs for frequencies just above ω_LO. At such a frequency the resonances show a large splitting of the collective-mode energy ?_nm and the single-particle mode energy E_nm.     

Hot electron drift velocity in Hg1−xCdxTe (x=0.205)

Hot electron drift velocity in Hg_1?xCd_xTe (x=0.205) at 77 K is calculated by the Monte Carlo technique. Band nonparabolicity, admixture of wave functions, and two-mode nature of the polar optic phonons are included in addition to the effects of deformation potential acoustic, alloy and ionized impurity scattering. Good agreement with the experimental data is achieved.     

Cyclotron resonance in Hg1−xCdxTe at 337 micrometre in the range 77 K – 150 K

Cyclotron resonance experiments have been performed in transmission at 337 μm on Hg_1?xCd_xTe single crystals with x = 0.20 and 0.215, at temperatures between 77 and 150 K.     

Nanoscratch behavior of Zn1−xCdxSe heteroepitaxial layers

This paper describes the nanoscratch behavior of Zn_1−xCd_xSe epilayers grown using molecular beam epitaxy (MBE). Transmission electron microscopy (TEM), scanning electron microscopy (SEM), and Hysitron Triboscope nanoindenter techniques were employed to determine the microstructures, morphologies, friction coefficients (μ), and hardnesses (H) of these materials, and thereby propose an explanation for their properties in terms of nanotribological behavior. Nanoscratch analysis revealed that the coefficient of friction of the Zn_1−xCd_xSe epilayer system decreased from 0.172 to 0.139 upon increasing the Cd content (x) from 0.07 to 0.34. Furthermore, studies of the scratch wear depth under a ramping load indicated that a higher Cd content provided the Zn_1−xCd_xSe epilayers with a higher shear resistance, which enhanced the strength of the CdSe bonds. These findings suggest that the greater stiffness of the CdSe bond, relative to that of the ZnSe bond, enhances the hardness of the epilayers. Indeed, the effect of the Cd content on the growth of the Zn_1−xCd_xSe epilayers is manifested in the resulting nanotribological behavior.     

Optical absorption in Hg1−xMnxTe, x < 0.2 mixed crystals

Optical absorption in Hg_1?xMn_xTe, x < 0.2 mixed crystals was measured in the photon energy range from 0.03 to 0.6 eV at the temperatures 295, 80, 15 K. Experimental results were interpreted on the basis of the Kane model for Δ ? E_G. A transition from the inverted band structure (α-Sn-type) to the simple (InSb-type) structure was observed and was found to be composition and temperature dependent.     

Resonant photoemission study of Eu1−xGdxTe layers

Resonant photoemission study of electronic structure of molecular beam epitaxy grown Eu_1−xGd_xTe layers without and with cover protected layer of Te were performed using synchrotron radiation. The analysis of the valence band and shallow core levels spectra of the clean surface of Eu_1−xGd_xTe obtained in situ under UHV conditions showed the existence of Eu²⁺ and Eu³⁺ ions in the layers. The trivalent europium ions mostly are located at the surface and its amount strongly depends on sample surface preparation conditions. The prolonged annealing of Eu_1−xGd_xTe layers covered with protected layer of Te leads to formation of clean surface of the sample not changing the stoichiometry of it and without the accumulation of Eu³⁺ ions at the surface region.     

On the magnetocaloric effect in Gd(Zn1−xCdx)

In this work, we calculate the magnetocaloric effect in the compounds Gd(Zn_1−xCd_x). We use a model Hamiltonian of interacting spins in which the indirect exchange interaction parameter between localized spins was calculated as a function of Cd concentration. The calculated isothermal entropy changes and the adiabatic temperature changes upon magnetic field variations are in good agreement with the available experimental data.     

X-ray photoelectron study of Sn1−xMnxTe semimagnetic semiconductors

X-ray photoelectron (XPS) studies of core-levels in Sn_1−xMn_xTe (x < 0.1) semimagnetic semiconductors have been performed. The spectra were acquired under UHV conditions from the clean (as-cleaved or in-situ scraped) crystal surface. The single-phase NaCl structure of the alloys studied was verified by X-ray diffraction (XRD). The structure of Sn 3d and Te 3d core-levels in SnMnTe was found fully consistent with that of SnTe. Remarkable qualitative similarity of the Mn 2p spectrum of Sn_1−xMn_xTe (x = 0.09) with the case of zinc-blende MnTe [R.J. Iwanowski, M.H. Heinonen, E. Janik, Chem. Phys. Lett. 387 (2004) 110] has been shown: (1) the same binding energies (BEs) of the main contributions to the Mn 2p_3/2 line, related to Mn²⁺ state of the bulk MnTe bond; (2) occurrence of low BE component in the Mn 2p spectrum, indicative of clean-surface species containing reduced-valence Mn ions (i.e. Mn^q+, where 0 < q < 2); (3) strong satellites of the 2p_3/2 (Mn²⁺ related) parent lines. In SnMnTe, the highest intensity ratio of the satellite to main peak (ever reported for Mn 2p photoelectron spectrum) was revealed; this was interpreted in terms of the so-called charge-transfer model.     

Magnetooptical evidence of exchange interactions in zero-gap Hg1−xFexTe mixed crystals

Interband magnetoabsorption is carried out on zero gap Hg_1-xFe_xTe alloys of x ～ 0.015.Γ₆ → Γ₈ magnetooptical spectra for σ⁺, σ^-, γ 6 H polarization are quantitatively interpreted within the “quasi Ge” model modified by the inclusion of exchange contributions. The field dependence of the magnetization provides evidence of antiferromagnetic interactions between localized spins.     

Effect of microstructure on the nanomechanical properties of Zn1−xCdxSe alloys

We present a study of the nanoindentation behavior of Zn_1−xCd_xSe epilayers grown using molecular beam epitaxy; the surface roughness, microstructure, and crystallinity were analyzed using atomic force microscopy, cross-sectional transmission electron microscopy, and X-ray diffraction; the hardness H and elastic modulus E were studied using nanoindentation techniques. We found that these highly crystalline materials possessed no stacking faults or twins in their microstructures. We observed a very marked increase in the value of H and a significant decrease in the value of E upon increasing the concentration of Cd, presumably because of an increase in the stiffness of the CdSe bond relative to that of the ZnSe bond. We observed a corresponding shrinkage of the contact-induced damage area for those films having a small grain size and a higher value of H. It appears that resistance against contact-induced damage requires a higher Cd concentration.     

Structural, optical and electrical properties of Zn1−xCdxO thin films prepared by PLD

Ternary polycrystalline Zn_1−xCd_xO semiconductor films with cadmium content x ranging from 0 to 0.23 were obtained on quartz substrate by pulse laser deposited (PLD) technique. X-ray diffraction measurement revealed that all the films were single phase of wurtzite structure grown on c-axis orientation with its c-axis lattice constant increasing as the Cd content x increasing. Atomic force microscopy observation revealed that the grain size of Zn_1−xCd_xO films decreases continuously as the Cd content x increases. Both photoluminescence and optical measurements showed that the band gap decreases from 3.27 to 2.78 eV with increasing the Cd content x. The increase in Cd content x also leads to the broadening of the emission peak. The resistivity of Zn_1−xCd_xO films decreases evidently for higher values of Cd content x. The shift of PL emission to visible light as well as the decrease of resistivity makes the Zn_1−xCd_xO films potential candidate for optoelectronic device.     

Formation of ZnO and Zn1−xCdxO films on CdTe/CdZnTe single crystals

In this work we report on the properties of ZnO and Zn_1−xCd_xO films formed on top of CdTe and CdZnTe single crystals. The films have been obtained by thermal evaporation of Zn metal films and further oxidation in atmospheric conditions. The structural and compositional characteristics of the films have been analysed by means of scanning electron microscopy and energy-dispersive X-ray analysis. The chemical composition of the films as a function of growth parameters has been obtained. It has been possible to demonstrate by Raman spectroscopy the formation of both ZnO and Zn_1−xCd_xO films. The possible inter-diffusion effects between the films and the substrate, derived from the oxidation process, have been discussed. It has been possible to check by means of photoluminescence, the optical quality of the ZnO and Zn_1−xCd_xO films, also regarding to the presence of local changes. Differences between the optical spectra obtained from various ZnO films grown on top of CdTe and CdZnTe substrates enabled the determination of compositional differences introduced by the substrate when the deposition parameters are modified.     

EPR and magnetic properties of vapour phase grown Zn1−xCrxTe crystals

The EPR and magnetic properties were investigated on vapour phase grown Zn_1−xCr_xTe (0.001?x?0.005) crystal samples at room temperature. The EPR spectra were observed for samples with x=0.001, 0.002 only. The simulations of the spectra confirm Cr³⁺ charge state of the dopant ion at tetrahedral symmetry. The magnetic behaviour of the samples with x=0.001 and 0.002 is neither that of Brillouin paramagnets nor Van Vleck systems while the samples with compositions x=0.003, 0.004 and 0.005 exhibited hysteresis behaviour.     

Growth, optical properties and laser performance of NdxLu1−xVO4 series crystals

Nd_xLu_1−xVO₄ (x = 0, 0.005, 0.02, 0.023, 0.03 and 0.05) series crystals have been grown by the Czochralski method. The results of X-ray powder diffraction experiments show that these crystals belong to the zircon-type structure. The cutoff wavelength of LuVO₄ is 330 nm and the transmittance is about 80% in 540-3010 nm. The functional relation of absorption coefficient α at 808 nm on Nd³⁺-doped concentration N_d in units of atomic % is obtained to be α = 7.649 N_d. The results of Judd-Ofelt analysis show that there is no obvious concentration quenching effect below 3 at.% doped concentrations. The highest output power at 1.06 μm is 1090 mW for Nd_0.02Lu_0.98VO₄ at the pumping power of 6.58 W of a laser diode, the optical-optical conversion efficiency is 16.6% and slope efficiency is 19.4%.     

Stimulated emission of free excitons in Cd1−xMnxTe under nonresonant two-photon excitation

We report on free excitons coexisting with exciton magnetic polarons (EMPs) in bulk semimagnetic semiconductors of Cd_1−xMn_xTe for 0.04?x?0.36 at 2 K under nonresonant two-photon excitation. This two-photon excitation not only generates free excitons but also more efficiently creates EMPs compared with ordinary one-photon excitation. Stimulated emission from free excitons is demonstrated under strong two-photon excitation.