电子束、离子辅助和离子束溅射三种工艺对光学薄膜性能的影响

 运用电子束、离子辅助和离子束溅射三种镀膜工艺分别制备光学薄膜，包括单层氧化物薄膜和增透膜，然后采取一系列测试手段，如Zygo轮廓仪、原子力显微镜、表面热透镜技术和X射线衍射等技术，来分析和研究不同的工艺对这些薄膜性能的不同影响，以判断合理的沉积工艺。     

离子束刻蚀技术研究

本文介绍了离子束刻蚀技术的原理,讨论了刻蚀速率与离子束流密度、离子能量和离子束入射角度的关系。实验结果与理论分析有较好的一致性。     

Ag-N doped ZnO film and its p-n junction fabricated by ion beam assisted deposition

Ag-N doped ZnO film was synthesized by ion beam assisted deposition and its electrical properties and annealing property were investigated. The films remained p-type even after annealing at 400 °C in air for 10 min. While the annealing temperature went up to 500 °C, the conduction type of these films shifted from p-type to n-type. The p-type ZnO film revealed low resistivity (0.0016 Ω cm), low Hall mobility (0.65 cm² V⁻¹ s⁻¹) and high carrier concentration (5.8 × 10²⁰ cm⁻³). ZnO p-n homojunction consisting of a p-type layer (Ag-N doped ZnO film) and an n-type layer (In-doped ZnO film) had been fabricated by ion beam assisted deposition. With electrical measurement, its current-voltage curve had a typical rectifying characteristic with current rectification ratio of 25 at bias ±5 V and a reverse current of 0.01 mA at −5 V. The depletion width was estimated 3.8 nm by using p-n junction equation.     

光刻及离子束蚀刻技术制作DNA芯片模版

采用光刻及离子束蚀刻技术制作面阵石英DNA芯片模版,利用扫描电子显微镜（SEM）和表面轮廓仪测试了所制石英DNA芯片模版的表面微结构形貌特征,分析了所制石英DNA芯片模版出现图形畸变的原因。所用工艺为在其它衬底材料表面制作更大规模及具有复杂结构的大面阵DNA芯片模版奠定了基础。     

光刻及离子束蚀刻技术制作DNA芯片模版

 采用光刻及离子束蚀刻技术制作面阵石英DNA芯片模版，利用扫描电子显微镜（SEM）和表面轮廓仪测试了所制石英DNA芯片模版的表面微结构形貌特征，分析了所制石英DNA芯片模版出现图形畸变的原因。所用工艺为在其它衬底材料表面制作更大规模及具有复杂结构的大面阵DNA芯片模版奠定了基础。     

离子束刻蚀软X射线透射光栅实验研究

利用全息-离子束刻蚀方法研制出了聚酰亚胺薄膜为衬底的金软X射线透射光栅.研究了光栅制作中曝光量、显影条件和离子束刻蚀工艺等因素对光栅参数的影响,并给出了在惯性约束激光核聚变实验研究中的应用结果,     

多层介质膜光谱调制反射镜的反应离子束刻蚀误差容限

 在千焦拍瓦高功率放大系统设计中,激光脉冲的时空和光谱整形技术一直受到人们的广泛关注。利用反应离子束刻蚀等微纳超精细加工而成的多层电介质结构反射镜可在高功率条件下实现啁啾脉冲的光谱整形。在光谱整形介质结构反射镜的设计与制造中,需要根据要求的反射率来合理提出反应离子束刻蚀误差容限指标。推导出反应离子束刻蚀误差容限的解析表达式。针对神光Ⅱ千焦拍瓦高功率放大系统设计中提出的多层介质光谱调制反射镜,分析了调制结构反射镜各层加工的容许误差,确定了反应离子束刻蚀误差容限指标。研究表明：刻蚀高折射率介质的加工误差容限为35 nm;刻蚀低折射率介质的加工误差容限为62 nm。此外,还从使用需要和加工难易的角度,对刻蚀方案进行了讨论。就加工难易程度而言,优选反应离子束刻蚀方案,且采用刻蚀并残留低折射率介质的方案更容易实现。     

电子束、离子辅助和离子束溅射三种工艺对光学薄膜性能的影响

运用电子束、离子辅助和离子束溅射三种镀膜工艺分别制备光学薄膜,包括单层氧化物薄膜和增透膜,然后采取一系列测试手段,如Zygo轮廓仪、原子力显微镜、表面热透镜技术和X射线衍射等技术,来分析和研究不同的工艺对这些薄膜性能的不同影响,以判断合理的沉积工艺。     

Characterization of hydrogenated amorphous carbon thin films by end-Hall ion beam deposition

Pure hydrogenated amorphous carbon (α-C:H) and nitrogen doped hydrogenated amorphous carbon (α-C:H:N) thin films were prepared using end-Hall (EH) ion beam deposition with a beam energy ranging from 24 eV to 48 eV. The composition, microstructure and mechanical properties of the films were characterized by Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, scanning probe microscopy (SPM), and nano-scratch tests. The films are uniform and smooth with root mean square roughness values of 0.5-0.8 nm for α-C:H and 0.35 nm for α-C:H:N films. When the ion energy was increased from 24 eV to 48 eV, the fraction of sp³ bonding in the α-C:H films increased from 36% to 55%, the hardness increased from 8 GPa to 12.5 GPa, and the Young's modulus increased from 100 GPa to 130 GPa. In the α-C:H:N films, N/C atomic ratio, the hardness and Young's modulus of the α-C:H:N films are, 0.087, 15 and 145 GPa, respectively. The results indicate that both higher ion energy and a small amount of N doping improve the mechanical properties of the films. The results have demonstrated that smooth and uniform α-C:H and α-C:H:N films with large area and reasonably high hardness and Young's modulus can be synthesized by EH ion source.     

多层介质膜光谱调制反射镜的反应离子束刻蚀误差容限

在千焦拍瓦高功率放大系统设计中,激光脉冲的时空和光谱整形技术一直受到人们的广泛关注。利用反应离子束刻蚀等微纳超精细加工而成的多层电介质结构反射镜可在高功率条件下实现啁啾脉冲的光谱整形。在光谱整形介质结构反射镜的设计与制造中,需要根据要求的反射率来合理提出反应离子束刻蚀误差容限指标。推导出反应离子束刻蚀误差容限的解析表达式。针对神光Ⅱ千焦拍瓦高功率放大系统设计中提出的多层介质光谱调制反射镜,分析了调制结构反射镜各层加工的容许误差,确定了反应离子束刻蚀误差容限指标。研究表明：刻蚀高折射率介质的加工误差容限为35 nm;刻蚀低折射率介质的加工误差容限为62 nm。此外,还从使用需要和加工难易的角度,对刻蚀方案进行了讨论。就加工难易程度而言,优选反应离子束刻蚀方案,且采用刻蚀并残留低折射率介质的方案更容易实现。     

Silver macro‐texture substrates fabricated by plasma selective etching for surface‐enhanced Raman scattering

We have demonstrated a novel method to generate the nanostructured substrate that shows a large enhancement with a spatially uniform enhancement factor of approximately 10⁶ in surface enhanced Raman scattering (SERS). The substrates are fabricated using plasma selective etching. First, the Al₂O₃–TiC template which contains mixed Al₂O₃ and TiC grains with the diameters of ~400 nm is selected as a base plate. The Al₂O₃ and TiC grains have different physical properties, such as hardness, which corresponds to different etching rate in a plasma gas. Then, the Al₂O₃–TiC substrate is selectively etched to generate a random macro‐texture (MT) with different depths using the plasma of mixed gas of Ar and C₂H₄. Third, the MT substrate is deposited with a silver film (Ag). We further demonstrate that by varying the thickness of Ag layer, the EF is different which is confirmed by the plasmonic localized electric fields calculations using finite difference time domain. Finally, we combine this novel Ag MT substrate with ultrathin dielectric film, and the prepared substrates are coated with a 10 Å ta‐C film. The 10 Å ta‐C film can protect the oxygen‐free Ag in air and prevent Ag ionizing in aqueous solutions. More importantly, the ultrathin ta‐C can release the strongest plasmonic electric field to the outside of ta‐C layer and get a higher electric field than the uncoated Ag substrate. We expect that this method has more potential applications in analytic assays using SERS technology. Copyright © 2012 John Wiley & Sons, Ltd.     

Native oxidation of ultra high purity Cu bulk and thin films

The effect of microstructure and purity on the native oxidation of Cu was studied by using angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and spectroscopic ellipsometry (SE). A high quality copper film prepared by ion beam deposition under a substrate bias voltage of −50 V (IBD Cu film at V_s = −50 V) showed an oxidation resistance as high as an ultra high purity copper (UHP Cu) bulk, whereas a Cu film deposited without substrate bias voltage (IBD Cu film at V_s = 0 V) showed lower oxidation resistance. The growth of Cu₂O layer on the UHP Cu bulk and both types of the films obeyed in principle a logarithmic rate law. However, the growth of oxide layer on the IBD Cu films at V_s = 0 and −50 V deviated upward from the logarithmic rate law after the exposure time of 320 and 800 h, respectively. The deviation from the logarithmic law is due to the formation of CuO on the Cu₂O layer after a critical time.     

HfO2顶层多层介质膜脉宽压缩光栅的离子束刻蚀

多层介质膜光栅是高功率激光系统的关键光学元件. 为了满足国内强激光系统的迫切需求,首先利用考夫曼型离子束刻蚀机开展了HfO₂顶层多层介质膜脉宽压缩光栅的离子束刻蚀实验研究. 采用纯Ar及Ar和CHF₃混合气体作为工作气体进行离子束刻蚀实验,获得了优化的离子源工作参数. 结果表明,与纯Ar离子束刻蚀相比,Ar和CHF₃混合气体离子束刻蚀时的HfO₂/光刻胶的选择比大. HfO₂的离子束刻蚀过程中再沉积效应明显,导致刻蚀光栅占宽比变大. 根据刻蚀速率分布制作的掩模遮挡板可以提高刻蚀速率均匀性,及时清洗离子源和更换灯丝,可保证刻蚀工艺的重复性. 利用上述技术已成功研制出多块最大尺寸为80 mm×150 mm、线密度1480线/mm、平均衍射效率大于95%的HfO₂顶层多层介质膜脉宽压缩光栅. 实验结果与理论设计一致,为大口径多层介质膜脉宽压缩光栅的离子束刻蚀提供了有益参考. 关键词： 光栅 多层介质膜 离子束刻蚀     

摆动刻蚀法制作高衍射效率凸面闪耀光栅

通过摆动离子束刻蚀方法,制作了用于短波红外高光谱成像光谱仪的凸面闪耀光栅。该方法通过在光栅子午方向上进行摆动刻蚀,解决了凸面光栅子午方向的闪耀角一致性问题。建立了摆动刻蚀模型来分析摆动速度、束缝宽度等工艺参数对槽型演化的影响,并计算了优化的刻蚀工艺参数。制备了基底尺寸为67 mm,曲率半径为156.88 mm,刻线密度为45.5 gr/mm,闪耀角为2.2°的凸面闪耀光栅,并对其表面形貌及衍射效率进行了测量。实验结果表明,摆动刻蚀法能够制作出闪耀角一致性好、衍射效率高的小闪耀角凸面光栅,满足成像光谱仪对光谱分辨率和便携性的使用要求。     

Molecular dynamics and experimental studies on deposition mechanisms of ion beam sputtering

Molecular dynamics (MD) simulation and experimental methods are used to study the deposition mechanism of ionic beam sputtering (IBS), including the effects of incident energy, incident angle and deposition temperature on the growth process of nickel nanofilms. According to the simulation, the results showed that increasing the temperature of substrate decreases the surface roughness, average grain size and density. Increasing the incident angle increases the surface roughness and the average grain size of thin film, while decreasing its density. In addition, increasing the incident energy decreases the surface roughness and the average grain size of thin film, while increasing its density. For the cases of simulation, with the substrate temperature of 500 K, normal incident angle and 14.6 × 10⁻¹⁷ J are appropriate, in order to obtain a smoother surface, a small grain size and a higher density of thin film. From the experimental results, the surface roughness of thin film deposited on the substrates of Si(1 0 0) and indium tin oxide (ITO) decreases with the increasing sputtering power, while the thickness of thin film shows an approximately linear increase with the increase of sputtering power.     

Electrical and piezoresistive properties of ion beam deposited DLC films

In present study diamond like carbon (DLC) films were deposited by closed drift ion source from the acetylene gas. The electrical and piezoresistive properties of ion beam synthesized DLC films were investigated. Diode-like current–voltage characteristics were observed both for DLC/nSi and DLC/pSi heterostructures. This fact was explained by high density of the irradiation-induced defects at the DLC/Si interface. Ohmic conductivity was observed for DLC/nSi heterostructure and metal/DLC/metal structure at low electric fields. At higher electric fields forward current transport was explained by Schottky emission and Poole–Frenkel emission for the DLC/nSi heterostructures and by Schottky emission and/or space charge limited currents for the DLC/pSi heterostructures. Strong dependence of the diamond like carbon film resistivity on temperature has been observed. Variable range hopping current transport mechanism at low electric field was revealed. Diamond like carbon piezoresistive elements with a gauge factor in 12–19 range were fabricated.     

双离子束溅射沉积HfO­­2光学薄膜的研究

 用双离子束溅射沉积氧化铪光学薄膜，并对此工艺下制备的氧化铪薄膜进行了光学性质、残余应力、结构特性以及激光损伤特性的研究。实验结果表明，用双离子束溅射沉积的氧化铪薄膜不仅结构均匀,膜层致密,无定形结构，而且具有极低的散射和吸收,均匀的非晶结构,杂质缺陷少,激光损伤阈值高。     

双离子束溅射沉积HfO­­2光学薄膜的研究

用双离子束溅射沉积氧化铪光学薄膜,并对此工艺下制备的氧化铪薄膜进行了光学性质、残余应力、结构特性以及激光损伤特性的研究。实验结果表明,用双离子束溅射沉积的氧化铪薄膜不仅结构均匀,膜层致密,无定形结构,而且具有极低的散射和吸收,均匀的非晶结构,杂质缺陷少,激光损伤阈值高。     

Argon-dominated plasma beam generated by filtered vacuum arc and its substrate etching

A new technique to etch a substrate as a pre-treatment prior to functional film deposition was developed using a filtered vacuum arc plasma. An Ar-dominated plasma beam was generated from filtered carbon arc plasma by introducing appropriate flow rate of Ar gas in a T-shape filtered arc deposition (T-FAD) system. The radiation spectra emitted from the filtered plasma beam in front of a substrate table were measured. The substrate was etched by the Ar-dominated plasma beam. The principal results are summarized as follows. At a high flow rate of Ar gas (50 ml/min), when the bias was applied to the substrate, the plasma was attracted toward the substrate table and the substrate was well etched without film formation on the substrate. Super hard alloy (WC), bearing steel (SUJ2), and Si wafer were etched by the Ar-dominated plasma beam. The etching rate was dependent on the kind of substrate. The roughness of the substrate increased, when the etching rate was high. A pulse bias etched the substrate without roughening the substrate surface excessively.     

高温超导滤波器两种刻蚀方法的研究

在高温超导滤波器的制备过程中,针对所使用的高温超导薄膜的特点,采用了两种刻蚀方法——湿化学刻蚀法和离子束刻蚀法,设计对比了两种刻蚀的制作流程及其优缺点,并用两种方法分别制备了高温超导滤波器,对微波特性做了对比分析。得出离子束刻蚀对超导薄膜的性能影响要小一些,用此方法制备的高温超导滤波器具有更好的微波特性。