X-ray photoelectron spectroscopic studies on initial oxidation of iron and manganese mono-silicides

Initial oxidation of iron and manganese mono-silicides (FeSi and MnSi) surfaces was studied by X-ray photoelectron spectroscopy (XPS). Clean surfaces of these silicides were prepared by fracturing in an ultra high vacuum, and then the fractured surfaces were oxidized by exposing to high-purity oxygen at pressures up to 1.3 Pa. For the clean FeSi surface, positive chemical shifts of the Fe 2p_3/2 and Si 2p peaks from elemental Fe and Si were 0.5 eV and 0.1 eV, respectively. For the clean MnSi surface, a negative chemical shift of the Si 2p peak from elemental Si was 0.1 eV. Iron on the FeSi surface was oxidized at an oxygen pressure of 1.3 Pa, whereas the silicon was oxidized under the pressure of 1.3 × 10⁻⁶ Pa, indicating that oxidation of silicon occurred prior to that of iron. Manganese and silicon on the MnSi were simultaneously oxidized in the range from 1.3 × 10⁻⁶ Pa to 1.3 × 10⁻³ Pa; however, over the pressure of 1.3 Pa, the oxidation of manganese occurs prior to that of silicon. These oxidation behaviors at low oxygen pressures were similar to those of the FeSi and MnSi fractured in air.     

Formation of functional groups on graphite during oxygen plasma treatment

Improved sample wettability was obtained by oxygen plasma functionalization of pyrolytic graphite. The samples were exposed to highly dissociated oxygen plasma with the density of 1 × 10¹⁶ m⁻³, the electron temperature of about 5.5 eV and the density of neutral oxygen atoms of 8 × 10²¹ m⁻³ for 20 s. The surface wettability was measured by a contact angle of water drop. The contact angle dropped from original 112° down to about 1°. The functional groups were detected by XPS analyses. The survey spectrum showed a substantial increase of oxygen concentration on the surface, while high-resolution analyses showed additional oxygen was bonded onto the graphite surface in the form of C-O polar functional group responsible for the increase of the surface energy.     

Oxygen plasma functionalization of poly(p-phenilene sulphide)

Surface effects during plasma activation of poly(p-phenilene sulphide)—PPS have been studied. Samples that were exposed to weakly ionized highly dissociated oxygen plasma created an inductively coupled radiofrequency discharge with the power of 100 W. The electron density and temperature were measured with a double Langmuir probe and were 4 × 10¹⁵ m⁻³ and 3 eV, respectively, while the neutral atom density was measured with a fiber optics catalytic probe and was 4 × 10²¹ m⁻³. The surface tension was determined by measuring the contact angle of deionized water, while the appearance of surface functional groups was detected by XPS. The surface tension of untreated PPS was 7 × 10⁻³ N/m or/and increased to 7 × 10⁻² N/m in few seconds of plasma treatment. It remained fairly constant for longer plasma treatments. The XPS survey spectrum showed little oxygen on untreated samples, but its concentration increased to about 20 at.% in few seconds. Detailed high resolution XPS C 1s peak showed that the carbon was left fairly stable during plasma treatment. The main functional groups formed were rather sulphate in sulphite groups, as determined from high resolution S 2p peak. Namely, a strong transition from sulphide to sulphate state of sulfur was observed. The spontaneous deactivation of the polymer surface was measured as well. The deactivation was fairly logarithmic with the characteristic decay time of several hours.     

X-ray photoelectron spectroscopic study on initial oxidation of hafnium hydride fractured in an ultra-high vacuum

The initial oxidation of hafnium hydride was studied by X-ray photoelectron spectroscopy (XPS). The clean surface of hafnium hydride was obtained by fracturing the specimen in an XPS measurement chamber under a background pressure of 2.7 × 10⁻⁶ Pa. The fractured surface was oxidized in situ with the exposure to high-purity oxygen and the residual gases in an ultra-high vacuum chamber. The XPS spectra for the oxidized surfaces had the shoulder due to the oxidation, and the shoulder grew up with increase in exposure time even in the ultra-high vacuum. The factor analysis for the XPS spectra of the oxidized surface showed that the oxide formed in the chamber consists of only the hafnium dioxide, and no suboxide states are contained. The result corresponded to the oxide observed on hafnium hydride fractured in air.     

Studies on surface graft polymerization of acrylic acid onto PTFE film by remote argon plasma initiation

The graft polymerization of acrylic acid (AAc) was carried out onto poly(tetrafluoroethylene) (PTFE) films that had been pretreated with remote argon plasma and subsequently exposed to oxygen to create peroxides. Peroxides are known to be the species responsible for initiating the graft polymerization when PTFE reacts with AAc. We chose different parameters of remote plasma treatment to get the optimum condition for introducing maximum peroxides (2.87 × 10⁻¹¹ mol/cm²) on the surface. The influence of grafted reaction conditions on the grafting degree was investigated. The maximum grafting degree was 25.2 μg/cm². The surface microstructures and compositions of the AAc grafted PTFE film were characterized with the water contact angle meter, Fourier-transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectroscopy (XPS). Contact angle measurements revealed that the water contact angle decreased from 108° to 41° and the surface free energy increased from 22.1 × 10⁻⁵ to 62.1 × 10⁻⁵ N cm⁻¹ by the grafting of the AAc chains. The hydrophilicity of the PTFE film surface was greatly enhanced. The time-dependent activity of the grafted surface was better than that of the plasma treated film.     

Investigation of oxygen states and reactivities on a nanostructured cupric oxide surface

Nanostructured copper (II) oxide was formed on clean copper foil at room temperature using activated oxygen produced by RF discharge. CuO particles of approximately 10-20 nm were observed on the surface by Scanning Tunneling Microscopy (STM). The copper states and oxygen species of the model cupric oxide were studied by means of X-ray Photoelectron Spectroscopy (XPS). These oxide particles demonstrated abnormally high reactivity with carbon monoxide (CO) at temperatures below 100 °C. The XPS data showed that the interaction of CO with the nanostructured cupric oxide resulted in reduction of the CuO particles to Cu₂O species. The reactivity of the nanostructured cupric oxide to CO was studied at 80 °C using XPS in step-by-step mode. The initial reactivity was estimated to be 5 × 10⁻⁵ and was steadily reduced down to 5 × 10⁻⁹ as the exposure was increased. O1s spectral analysis allowed us to propose that the high initial reactivity was caused by the presence of non-lattice oxygen states on the surface of the nanostructured CuO. We established that reoxidation of the partially reduced nanostructured cupric oxide by molecular oxygen O₂ restored the highly reactive oxygen form on the surface. These results allowed us to propose that the nanostructured cupric oxide could be used for low temperature catalytic CO oxidation. Some hypotheses concerning the nature of the non-lattice oxygen species with high reactivity are also discussed.     

Chemical alteration of poly(vinyl fluoride) Tedlar induced by exposure to vacuum ultraviolet radiation

In this study the chemical alteration of poly(vinyl fluoride) Tedlar^® by vacuum ultraviolet radiation (VUV) (115-400 nm) has been examined using X-ray photoelectron spectroscopy (XPS). The initial F/C atom ratio of 0.34 decreases to 0.17 after a 2-h exposure. The F/C atom ratio is further reduced to a steady-state value of approximately 0.04 after a 24-h exposure. Similarly, the O/C atom ratio is reduced from 0.08 to 0.05 and then to 0.02 during these two exposures. As the F and O are removed by VUV exposure, the C concentration increases from 70.5 to 82.0 and then to 94.6 at.% thus forming a graphitic or amorphous carbon-like layer which erodes more slowly than the virgin Tedlar surface. Exposure of the VUV-damaged surface to O₂ results in chemisorption of O, indicating that reactive sites are formed during the chemical erosion by VUV. Further exposure to VUV removes this chemisorbed oxygen but a subsequent exposure to air at atmospheric conditions causes a three-fold increase in O chemisorbed at the surface. Comparison of XPS data indicates that the mechanisms of chemical alteration by VUV radiation and hyperthermal (∼5 eV) atomic oxygen (AO) are similar.     

XPS study of silicon surface after ultra-low-energy ion implantation

Ultra-low-energy ion implantation of silicon with a hydrogen-terminated (0 0 1) surface was carried out using a mass-separated ³¹P⁺ ion beam. The ion energy was 30 eV, the displacement energy of silicon, and the ion doses were 6 × 10¹³ ions/cm². Annealing after the implantation was not carried out. The effects of ion implantation on the surface electrical state of silicon were investigated using X-ray photoelectron spectroscopy (XPS). The Si 2p peak position using XPS depends on the doping conditions because the Fermi level of the hydrogen-terminated silicon surface is unpinned. The Si 2p peak position of the specimen after ion implantation at a vacuum pressure of 3 × 10⁻⁷ Pa was shifted to the higher energy region. It suggested the possibility of phosphorus doping in silicon without annealing. In the case of ion implantation at 5 × 10⁻⁵ Pa, the Si 2p peak position was not shifted, and the peak was broadened because of the damage by the fast neutrals. Ultra-low-energy ion doping can be achieved at ultra-high-vacuum conditions.     

Investigations of the hydrophobic and scratch resistance behavior of polystyrene films deposited on bell metal using RF-PACVD process

Polystyrene films are deposited on bell metal substrates using radiofrequency plasma assisted chemical vapor deposition (RF-PACVD) process. The deposition of polystyrene film is carried out at working pressure of 1.6 × 10⁻¹ mbar and in the RF power range of 20-110 W. The hydrophobic and mechanical behaviors of the polystyrene films are studied as a function of RF power. The chemical compositions and surface chemistry of the polystyrene films are investigated using Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). It is revealed that enhanced cross-linked chemical structure and higher loss of oxygen by peroxy polystyryl radical with increasing RF power results in the formation of polystyrene films with more hydrophobic and scratch resistance behavior. However, extensive destruction of cross-linked chemical structure due to high energetic ion bombardment tends to decrease the hydrophobic and scratch resistance behavior of the polystyrene film deposited at RF power of 110 W. Atomic force microscopy (AFM) images show quite uniform and crack free surfaces of the polystyrene films having rms roughness in the range of 0.35-0.87 nm. Attempts are made to correlate the characterization results with the parameters that are used for thin film depositions.     

Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma

N-type 4H-SiC (0 0 0 1) surfaces were cleaned by low temperature hydrogen plasma in electronic cyclotron resonance (ECR) microware plasma system. The effects of the hydrogen plasma treatment (HPT) on the structure, chemical and electronic properties of surfaces were characterized by in situ reflection high energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS). The RHEED results indicate that the structures of the films are strongly dependent on the treatment temperature and time. Significant improvements in quality of 4H-SiC films can be obtained with the temperature ranging from 200 °C to 700 °C for an appropriate treatment period. The XPS results show that the surface oxygen is greatly reduced and the carbon contamination is completely removed from the 4H-SiC surfaces. The hydrogenated SiC surfaces exhibit an unprecedented stability against oxidation in the air. The surface Fermi level moves toward the conduction band in 4H-SiC after the treatment indicating an unpinning Fermi level with the density of surfaces states as low as 8.09 × 10¹⁰ cm⁻² eV⁻¹.     

Oxygen pressure dependent interfacial polarization of perovskite oxide multilayers on Si substrates

The SrTiO₃/La_0.9Sr_0.1MnO₃ (STO/LSMO) multilayers were fabricated on n-Si (1 0 0) substrates using a computer-controlled laser molecular-beam epitaxy (MBE) technique at 1 × 10⁻² Pa and 2 × 10⁻⁴ Pa oxygen partial pressures, respectively. The dielectric properties of the multilayers (MLs) were investigated. The differences of the dielectric properties of the two samples were explained by an impedance analysis technique, which indicates that the interfacial polarization has a close relationship with the oxygen pressure.     

Formation and hydrogenation of p(2 × 2)-N on Pt(1 1 1)

The formation of a well-ordered p(2 × 2) overlayer of atomic nitrogen on the Pt(1 1 1) surface and its reaction with hydrogen were characterized with reflection absorption infrared spectroscopy (RAIRS), temperature programmed desorption (TPD), low energy electron diffraction (LEED), Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS). The p(2 × 2)-N overlayer is formed by exposure of ammonia to a surface at 85 K that is covered with 0.44 monolayer (ML) of molecular oxygen and then heating to 400 K. The reaction between ammonia and oxygen produces water, which desorbs below 400 K. The only desorption product observed above 400 K is molecular nitrogen, which has a peak desorption temperature of 453 K. The absence of oxygen after the 400 K anneal is confirmed with AES. Although atomic nitrogen can also be produced on the surface through the reaction of ammonia with an atomic, rather than molecular, oxygen overlayer at a saturation coverage of 0.25 ML, the yield of surface nitrogen is significantly less, as indicated by the N₂ TPD peak area. Atomic nitrogen readily reacts with hydrogen to produce the NH species, which is characterized with RAIRS by an intense and narrow (FWHM ∼ 4 cm⁻¹) peak at 3322 cm⁻¹. The areas of the H₂ TPD peak associated with NH dissociation and the XPS N 1s peak associated with the NH species indicate that not all of the surface N atoms can be converted to NH by the methods used here.     

Chemical composition of ZrC thin films grown by pulsed laser deposition

ZrC films were grown on (1 0 0) Si substrates by the pulsed laser deposition (PLD) technique using a KrF excimer laser working at 40 Hz. The nominal substrate temperature during depositions was set at 300 °C and the cooling rate was 5 °C/min. X-ray diffraction investigations showed that films deposited under residual vacuum or under 2 × 10⁻³ Pa of CH₄ atmosphere were crystalline, exhibiting a (2 0 0)-axis texture, while those deposited under 2 × 10⁻² Pa of CH₄ atmosphere were found to be equiaxed and with smaller grain size. The surface elemental composition of as-deposited films, analyzed by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), showed the usual high oxygen contamination of carbides. Once the topmost 2-4 nm region was removed, the oxygen concentration rapidly decreased, down to around 3-8% only in bulk. Simulations of the X-ray reflectivity (XRR) curves indicated a smooth surface morphology, with roughness values below 1 nm (rms) and films density values of around 6.30-6.45 g/cm³, very close to the bulk density. The growth rate, estimated from thickness measurements by XRR was around 8.25 nm/min. Nanoindentation results showed for the best quality ZrC films a hardness of 27.6 GPa and a reduced modulus of 228 GPa.     

Nitrogen plasma-based ion implantation of poly(tetrafluoroethylene): Effect of the main parameters on the surface properties

The surface of poly(tetrafluoroethylene) (PTFE or Teflon) was treated by nitrogen plasma-based ion implantation. Accelerating voltages between 15 and 30 kV, fluences between 1 × 10¹⁷ and 3 × 10¹⁷ cm⁻² and fluence rates between 3 × 10¹³ and 7 × 10¹³ cm⁻² s⁻¹ were applied. The effects of these main parameters were examined on the evolution of surface chemical composition, mean roughness, abrasive wear, wettability and surface electrical resistance. The aim was to obtain relationships, enabling to control the surface properties examined.The F/C atomic ratio determined by XPS strongly decreased, correlating inversely with voltage. The mean surface roughness characterized by topography measurements, increased, correlating directly with fluence and inversely with voltage. The wear volume obtained by multipass scratch tests did not show clear relationship with the main process parameters, however, it increased upon treatment with the increase of surface roughness and O/C atomic ratio. The water contact angle increased at low voltages and high fluences, due to preferential increase of roughness, and decreased at high voltages and low fluences, owing to intense defluorination and incorporation of N and O. The electrical resistance of the PBII-treated surfaces decreased by several orders of magnitude, showing a significant inverse correlation with fluence. It continued to decrease for samples exposed to air, primarily after treatments performed with low fluences, due to post-treatment type oxidation.     

Oxidation of Ni(Pt)Si by molecular vs. atomic oxygen

X-ray photoelectron spectroscopy (XPS) has been used to characterize the oxidation of a clean Ni(Pt)Si surface under two distinct conditions: exposure to a mixed flux of atomic and molecular oxygen (O + O₂; PO+O₂ = 5 × 10⁻⁶ Torr) and pure molecular oxygen (O₂; PO₂ = 10⁻⁵ Torr) at ambient temperatures. Formation of the clean, stoichiometric (nickel monosilicide) phase under vacuum conditions results in the formation of a surface layer enriched in PtSi. Oxidation of this surface in the presence of atomic oxygen initially results in formation of a silicon oxide overlayer. At higher exposures, kinetically limited oxidation of Pt results in Pt silicate formation. No passivation of oxygen uptake of the sample is observed for total O + O₂ exposure <8 × 10⁴ L, at which point the average oxide/silicate overlayer thickness is 23 (3) Å (uncertainty in the last digit in parentheses). In contrast, exposure of the clean Ni(Pt)Si surface to molecular oxygen only (maximum exposure: 5 × 10⁵ L) results in slow growth of a silicon oxide overlayer, without silicate formation, and eventual passivation at a total average oxide thickness of 8(1) Å, compared to a oxide average thickness of 17(2) Å (no silicate formation) for the as-received sample (i.e., exposed to ambient.) The aggressive silicon oxidation by atomic oxygen, results in Ni-rich silicide formation in the substrate and the kinetically limited oxidation of the Pt.     

Organic contaminants removal by oxygen ECR plasma

Recently electron cyclotron resonance (ECR) plasma have been explored for wafer cleaning applications, since it is known to do less damage to silicon surface than conventional plasma. Organic contaminants removal efficiency and plasma radiation damage of the ECR plasma cleaning have been investigated. In oxygen ECR plasma cleaning, the plasma exposure time needed to remove the organic contaminants on the silicon surface down to the detection limit is 40 s, but the one to reach the lowest surface roughness is 10 s. The leakage current level of the MOS capacitor made using the Si substrate exposed to oxygen ECR plasma for 40 s is 8 × 10⁻⁹ A. The optimum exposure time determined by considering the contaminants removal efficiency and the plasma radiation damage (or the leakage current level) is 40 s. Organic contaminants seem to be removed through both sputter-off mechanism by oxygen ion bombardment and evaporation mechanism by chemical reactions with excited oxygen atoms.     

Optical emission spectroscopy by Ar ion sputtering of Ti surface under O2 environment

Visible light emission from atoms and ions sputtered on a polycrystalline Ti surface was observed under irradiation of 30 keV Ar³⁺ ions. A number of atomic lines of Ti I and II were observed in the wavelength of 250-850 nm. The intensity of Ti II emission increased 1.3-5.6 times by introducing oxygen molecules at a pressure of 5.8 × 10⁻⁵ Pa, whereas that of Ti I decreased 0.5-0.8 times. Factors enhancing or reducing photon intensities were plotted as a function of energy of the corresponding electrons in the excited states for Ti atoms and Ti⁺ ions.     

Effect of plasma treatment on interface property of BCN/GaN structure

Interface properties of BCN/GaN metal-insulator-semiconductor (MIS) structures are investigated by X-ray photoelectron spectroscopy (XPS) and capacitance versus voltage (C-V) characteristics measurements. The BCN/GaN samples are fabricated by in situ process consisting of plasma treatment and deposition of BCN film in the plasma-assisted chemical vapor deposition (PACVD) apparatus. XPS measurement shows that the oxide formation at the BCN/GaN interface is suppressed by nitrogen (N₂) and hydrogen (H₂) plasma treatment. The interface state density is estimated from C-V characteristics measured at 1 MHz using Terman method. The minimum interface state density appears from 0.2 to 0.7 eV below the conduction band edge of GaN. The minimum value of the interface state density is estimated to be 3.0 × 10¹⁰ eV⁻¹ cm⁻² for the BCN/GaN structure with mixed N₂ and H₂ plasma treatment for 25 min. Even after annealing at 430 °C for 10 min, the interface state density as low as 6.0 × 10¹⁰ eV⁻¹ cm⁻² is maintained.     

In situ XPS study of Pd(1 1 1) oxidation. Part 1: 2D oxide formation in 10 mbar O2

The oxidation of the Pd(1 1 1) surface was studied by in situ XPS during heating and cooling in 3 × 10⁻³ mbar O₂. A number of adsorbed/dissolved oxygen species were identified by in situ XPS, such as the two dimensional surface oxide (Pd₅O₄), the supersaturated O_ads layer, dissolved oxygen and the R 12.2° surface structure.Exposure of the Pd(1 1 1) single crystal to 3 × 10⁻³ mbar O₂ at 425 K led to formation of the 2D oxide phase, which was in equilibrium with a supersaturated O_ads layer. The supersaturated O_ads layer was characterized by the O 1s core level peak at 530.37 eV. The 2D oxide, Pd₅O₄, was characterized by two O 1s components at 528.92 eV and 529.52 eV and by two oxygen-induced Pd 3d_5/2 components at 335.5 eV and 336.24 eV. During heating in 3 × 10⁻³ mbar O₂ the supersaturated O_ads layer disappeared whereas the fraction of the surface covered with the 2D oxide grew. The surface was completely covered with the 2D oxide between 600 K and 655 K. Depth profiling by photon energy variation confirmed the surface nature of the 2D oxide. The 2D oxide decomposed completely above 717 K. Diffusion of oxygen in the palladium bulk occurred at these temperatures. A substantial oxygen signal assigned to the dissolved species was detected even at 923 K. The dissolved oxygen was characterised by the O 1s core level peak at 528.98 eV. The “bulk” nature of the dissolved oxygen species was verified by depth profiling.During cooling in 3 × 10⁻³ mbar O₂, the oxidised Pd²⁺ species appeared at 788 K whereas the 2D oxide decomposed at 717 K during heating. The surface oxidised states exhibited an inverse hysteresis. The oxidised palladium state observed during cooling was assigned to a new oxide phase, probably the R 12.2° structure.     

The production and oxidation of uranium nanoparticles produced via pulsed laser ablation

Depleted uranium samples were ablated using five nanosecond pulses from a Nd:YAG laser and produced films of ∼1600 Å thickness that were deposited with an angular distribution typical of a completely thermal ablation (cos¹ θ). The films remained contiguous for many months in vacuum but blistered due to tensile stress induced in the films several days after being brought into air. While under vacuum (2 × 10⁻¹⁰ Torr base pressure) the films were allowed to oxidize from the residual gases, of which water vapor was found to be the primary oxidizer. During the oxidation, the samples were monitored with both X-ray and ultraviolet photoemission spectroscopy (XPS and UPS) and were found to oxidize following Langmuir kinetics. That a 2D-surface growth model described the oxidation indicates that, even at these low pressures, oxygen accumulation on the surface is a much faster process than diffusion into the bulk. While bulk diffusion did occur, the oxygen present at the surface saturated the measurements taken using photoemission and diffusion was difficult to observe. A method for determining oxide concentration via photoemission from the valence level, as opposed to the more conventional core levels, is also presented.