Annealing effect on CdS/SnO2 films grown by chemical bath deposition

The extensive investigation of the annealing effect in nitrogen atmosphere on the structural optical and electrical properties of chemically deposited CdS films on SnO₂ has been performed. The as-deposited film shows 2.45 eV band gap (E_g) and decreases with increasing annealing temperature. The film annealed at 623 K having pure hexagonal phase (a = 4.14 Å, c = 6.71 Å for [1 0 0] plane) and E_g = 2.36 eV shows 10 times higher conductivity for all temperature range, and shows two different activation energies E_a = 0.114 eV and E_a = 0.033 eV for the temperature range 395 K ≤ T ≤ 515 K and 515 K ≤ T ≤ 585 K, respectively. The structural parameters such as dislocation density, strain and optical parameters such as absorption and extinction coefficient are calculated and compared for all the films.     

A variable temperature EPR study of the manganites (La1/3Sm2/3)2/3SrxBa0.33−xMnO3 (x=0.0, 0.1, 0.2, 0.33): Small polaron hopping conductivity and Griffiths phase

Four manganite samples of the series, (La_1/3Sm_2/3)_2/3Sr_xBa_0.33−xMnO₃, with x=0.0, 0.1, 0.2 and 0.33, were investigated by X-band (∼9.5 GHz) electron paramagnetic resonance (EPR) in the temperature range 4-300 K. The temperature dependences of EPR lines and linewidths of the samples with x=0.0, 0.1 and 0.2, containing Ba²⁺ ions, exhibit similar behavior, all characterized by the transition temperatures (T_C) to ferromagnetic states in the 110-150 K range. However, the sample with x=0.33 (containing no Ba²⁺ ions) is characterized by a much higher T_C=205 K. This is due to significant structural changes effected by the substitution of Ba²⁺ ions by Sr²⁺ ions. There is an evidence of exchange narrowing of EPR lines near T_min, where the linewidth exhibits the minimum. Further, a correlation between the temperature dependence of the EPR linewidth and conductivity is observed in all samples, ascribed to the influence of small-polaron hopping conductivity in the paramagnetic state. The peak-to-peak EPR linewidth was fitted to ΔB_pp(T)=ΔB_pp,min+A/Texp(−E_a/k_BT), with E_a=0.09 eV for x=0.0, 0.1 and 0.2 and E_a=0.25 eV for x=0.33. From the published resistivity data, fitted here to σ(T)∝1/T exp(−E_σ/k_BT), the value of E_σ, the activation energy, was found to be E_σ=0.18 eV for samples with x=0.0, 0.1 and 0.2 and E_σ=0.25 eV for the sample with x=0.33. The differences in the values of E_a and E_σ in the samples with x= 0.0, 0.1and 0.2 and x=0.33 has been ascribed to the differences in the flip-flop and spin-hopping rates. The presence of Griffiths phase for the samples with x=0.1 and 0.2 is indicated; it is characterized by coexistence of ferromagnetic nanostructures (ferrons) and paramagnetic phase, attributed to electronic phase separation.     

Electrical properties of KTiOPO4 single crystal in the temperature range from −100 °C to 100 °C

The electrical property of a KTiOPO₄ single crystal was studied by means of a dielectric spectroscopy method in the temperature range from −100 to 100 °C. Dielectric dispersion began at a temperature, T_S=−80 °C. It is believed that this dielectric dispersion is related to the ionic hopping conduction, which arises mainly from the jumping of K⁺ ions. The activation energy concerned with hopping conduction is E_a∼0.20 eV above T_S. T_S=−80 °C can be the minimum temperature for the hopping K⁺ ion.     

Electrical properties and dielectric relaxation of thermally evaporated zinc phthalocyanine thin films

The electrical transport properties and dielectric relaxation of Au/zinc phthalocyanine, ZnPC/Au devices have been investigated. The DC thermal activation energy at temperature region 400-500 K is 0.78 eV. The dominant conduction mechanisms in the device are ohmic conduction below 1 V and space charge limited conduction dominated by exponential trap distribution in potentials >1 V. Some parameters, such as concentration of thermally generated holes in valence band, the trap concentration per unit energy range at the valence band edge, the total concentration of traps and the temperature parameter characterizing the exponential trap distribution and their relation with temperatures have been determined. The AC electrical conductivity, σ_ac, as a function of temperature and frequency has been investigated. It showed a frequency and temperature dependence of AC conductivity for films in the temperature range 300-400 K. The films conductivity in the temperature range 400-435 K increased with increasing temperature and it shows no response for frequency change. The dominant conduction mechanism is the correlated barrier hopping. The temperature and frequency dependence of real and imaginary dielectric constants and loss tangent were investigated.     

Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E_C—0.33 eV, E_C—0.36 eV, E_C—0.38 eV and E_C—0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E_C—0.58 eV. Isochronal annealing of the passivated material between 50 and 300 °C, revealed the emergence of a secondary defect, not previously observed, at E_C—0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 °C, as all the defects originally observed in the reference sample were recovered.     

Island coalescence and diffusion along kinked steps on Cu(0 0 1): Evidence for a large kink Ehrlich-Schwoebel barrier

Using temperature-variable scanning tunneling microscopy, we studied the coalescence of vacancy islands on Cu(0 0 1) in ultra-high vacuum. From the temperature dependence of the relaxation of merged vacancy islands to the equilibrium shape we obtain an activation energy of the island coalescence process of 0.76 eV. From that value we deduce an activation energy for the atomic hopping coefficient of E_Γh=0.89 eV. Comparing our result with previous STM data on step fluctuations with dominant diffusion along straight step segments (E_Γh=0.68 eV; [M. Giesen, S. Dieluweit, J. Mol. Catal. A: Chem. 216 (2004) 263]) and step fluctuations with kink crossing (E_Γh=0.9 eV; [M. Giesen-Seibert, F. Schmitz, R. Jentjens, H. Ibach, Surf. Sci. 329 (1995) 47]), we conclude that there is a large extra barrier for diffusion of atoms across kinks on Cu(0 0 1) of the order of 0.23 eV. This is the first direct experimental evidence for the existence of a large kink Ehrlich-Schwoebel barrier on Cu(0 0 1).     

Crystal structure,ionic conductivity and dielectric relaxation studies in the (C5H10N)2BiBr5 compound

The synthesis and crystal structure of the bis (3-dimethylammonium-1-propyne) pentabromobismuthate(III) salt are given in the present paper. After an X-ray investigation, it has been shown that the title compound crystallizes at 298 K in a centrosymmetric monoclinic system, in the space group C₂/c with the following lattice parameters a=12.9034(3) Å, b=19.4505(6) Å, c=8.5188(2) Å, β=102.449(2). Not only were the impedance spectroscopy measurements of (C₅H₁₀N)₂BiBr₅ carried out from 209 Hz to 5 MHz over the temperature range of 318 K–373 K, but also its ac conductivity evaluated. Besides, the dielectric relaxation was examined using the modulus formalism. Actually, the near values of activation energies obtained from the impedance and modulus spectra confirms that the transport is of an ion hopping mechanism, dominated by the motion of the H⁺ ions in the structure of the investigated material.     

Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

We have used deep level transient spectroscopy (DLTS), and Laplace-DLTS to investigate the defects created in antimony doped germanium (Ge) by sputtering with 3 keV Ar ions. Hole traps at E_V+0.09 eV and E_V+0.31 eV and an electron trap at E_C−0.38 eV (E-center) were observed soon after the sputtering process. Room temperature annealing of the irradiated samples over a period of a month revealed a hole trap at E_V+0.26 eV. Above room temperature annealing studies revealed new hole traps at E_V+0.27 eV, E_V+0.30 eV and E_V+0.40 eV.     

Electrical and optical absorption studies of Cu7GeS5I fast-ion conductor

Electrical conductivity and fundamental absorption spectra of monocrystalline Cu₇GeS₅I were measured in the temperature ranges 95-370 and 77-373 K, respectively. A rather high electrical conductivity (σ_t=6.98×10⁻³Ω⁻¹ cm⁻¹ at 300 K) and low activation energy (ΔE_a=0.183 eV) was found. The influence of different types of disordering on the Urbach absorption edge and electron-phonon interaction parameters were calculated, discussed and compared with the same parameters in Cu₇GeS₅I, Cu₆PX₅I (X=S,Se) and Ag₇GeX₅I (X=S,Se) compounds. We have concluded that the P→Ge and Cu→Ag cation substitution results in an increase of the electrical conductivity and a decrease of the activation energy. Besides, P→Ge substitution, results in complete smearing and disappearance of the exciton absorption bands and in blue shift of the Urbach absorption edge, an increase of the edge energy width and an electron-phonon-interaction enhancement.     

Atomistic modeling of β-Sn surface energies and adatom diffusivity

Energies for low number Miller index surfaces of β-Sn (b.c.t. structure) were computed and the (1 0 0) plane was found to have the lowest un-relaxed energy of 0.0497 eV/Ų. We then used the Dimer method to find mechanisms and corresponding activation energies, E_A, for a Sn adatom moving on a β-Sn (1 0 0) surface. After extensive dimer searches and comparison to long molecular dynamics simulations, we conclude that two simple hopping mechanisms dominate transitions on this surface. For each, we determined hopping rates of the adatom using transition state theory and computed its tracer diffusivity. A hop of the adatom in the lattice c-direction gives D_300 K = 1.893 × 10⁻⁰⁶ cm²/s (E_A = 0.1493 eV), while in the lattice a-direction D_300 K = 3.994 × 10⁻⁰⁶ cm²/s (E_A = 0.1138 eV). When compared to studies on the existence of low energy multi-atom adatom diffusion on Cu and Al (1 0 0), we assert that β-Sn's successive (2 0 0) plane layering in the [1 0 0] direction provides for significantly lower activation energies and may contribute to the inability to locate any concerted atomic motion mechanisms.     

Electron hopping mechanism in hematite (α-Fe2O3)

The frequency dependence of the real (?′) and imaginary (?″) parts of the dielectric constant of polycrystalline hematite (α-Fe₂O₃) has been investigated in the frequency range 0-100 kHz and the temperature range 190-350 K, in order to reveal experimentally the electron hopping mechanism that takes place during the Morin transition of spin-flip process. The dielectric behaviour is described well by the Debye-type relaxation (α-dispersion) in the temperature regions T<233 K and T>338 K. In the intermediate temperature range 233 K<T<338 K a charge carrier mechanism takes place (electron jump from the O²⁻ ion into one of the magnetic ions Fe³⁺) which gives rise to the low frequency conductivity and to the Ω-dispersion. The temperature dependence of relaxation time (τ) in the −ln τ vs 10³/T plot shows two linear regions. In the first, T<238 K, τ increases with increasing T implying a negative activation energy −0.01 eV, and in the second region T>318 K τ decreases as the temperature increases implying a positive activation energy 0.12 eV. The total reorganization energy (0.12-0.01) 0.11 eV is in agreement with the adiabatic activation energy 0.11 eV given by an ab initio model in the literature. The temperature dependence of the phase shift in the frequencies 1, 5, 10 kHz applied shows clearly an average Morin temperature T_Mo=284±1 K that is higher than the value of 263 K corresponding to a single crystal due to the size and shape of material grains.     

Ac magnetic susceptibility measurements in nanoparticulate powders of iron-doped ZnO

Low temperature (T) ac magnetic susceptibility (χ_ac) measurements were performed in powder samples of the Zn_1−xFe_xO (x=0-0.078) prepared by a combustion reaction method. The amplitude of the ac magnetic field was kept constant (1 mT) while its frequency (f) varied in the range 10-10⁴ Hz for 5≤T≤300 K. The diluted samples presented cusps with maxima distributed around T_f=17.5±0.5 K while no such feature was observed for the pure sample (x=0). The cusp was found to become more pronounced with the increasing Fe content. Also it decreased and shifted to higher values of T by increasing f. The shift in T_f was found to follow a Vogel-Fulcher law with E_a/k_B=317.6 K, T₀=4.65 K and τ₀=10⁻¹⁴ s, for the activation energy, critical temperature and characteristic time-constant, respectively. The energy gap of the sample was measured and they were found to vary in the range 3.75-3.80 eV. The overall χ_ac-data resembles those obtained for cluster spin-glass state.     

Superparamagnetic behavior of La0.67Sr0.33MnO3 nanoparticles prepared via sol-gel method

Magnetic nanoparticles of La_0.67Sr_0.33MnO₃ (LSMO) manganite were prepared by sol-gel method. Phase formation and crystal structure of the synthesized powder were examined by the X-ray diffraction (XRD) using the Rietveld analysis. The mean particle size was determined by the transmission electron microscopy (TEM). Infrared transmission spectroscopy revealed that stretching and bending modes are influenced by calcinations temperature. The temperature dependence of the ac magnetic susceptibility was measured at different frequencies and ac magnetic fields in the selected ranges of 40-1000 Hz and 80-800 A/m, respectively. The temperature dependence of ac susceptibility shows a characteristic maxima corresponding to the blocking temperature near room temperature. The frequency dependence of the blocking temperature is well described by the Vogel-Fulcher law. By fitting the experimental data with this law, the relaxation time τ₀=1.7×10⁻¹² s, characteristic temperature T₀=262±3 K, anisotropy energy E_a/k=684±15 K and effective magnetic anisotropy constant k_eff=2.25×10⁴ erg/cm³ have been obtained. dc Magnetization measurement versus magnetic field shows that some of LSMO nanoparticles are blocked at 293 K. The role of magnetic interparticle interactions on the magnetic behavior is also investigated.     

X-ray and pulsed NMR studies of lithium nitride chlorides in anti-fluorite type structures

Lithium nitride chloride, Li_2-2xN_0.5-xCl_0.5+x′ have been found to possess anti-fluorite type structures in the range 0.05 <x< 0.1, with Fm3m, and with the lattice parameter in the range 5.354 ≈ 5.375 Å. The ⁷Li relaxation was studied in the temperature range 178–625 K, and the activation energy for Li⁺ hopping motion, E_a = 0.19 eV was obtained for x = 1. Small variation of E_a with composition or with occupancy of the Li⁺ site was confirmed.     

Dielectric behavior and charge transport in polyaniline nanofiber reinforced PMMA composites

PAni nanofibers synthesized by interfacial polymerization were reinforced in the PMMA matrix in different weight ratios. Randomly oriented polyaniline nanofibers were observed in the TEM image with diameter ranging from 20 to 30 nm. The SEM revealed the microstructure of the fiber reinforced composites showing better connectivity. The XRD spectra of the composites showed peaks at 2θ=17.05°, 20.3°, 27.15° and 30.05° that were indexed in a pseudo-orthorhombic unit cell. The dielectric constant measured over a frequency range of 42 Hz-1 MHz and in the temperature range of 303-373 K showed dependence upon frequency, temperature and concentration of the conducting nanofibers in the composites. The ac conductivity (σ_ac) was interpreted as a power law of frequency. The frequency exponent s was found to lie in the range from 0.4 to 0.65 and decreased with the increase in temperature, which suggested that correlated barrier hopping (CBH) was the dominant charge transport mechanism. Existence of polarons as major charge carriers was confirmed by the low values of polaron binding energy (W_M). Decrease in the values of density of states N(E_F) with the increase in PAni nanofiber concentration indicated increased delocalization of electronic states in the band gap causing the increase in ac conductivity.     

Effect of annealing temperature on the optical and electrical properties of amorphous As45.2Te46.6In8.2 thin films

The optical absorption of the As-prepared and annealed As_45.2Te_46.6In_8.2 thin films are studied. Films annealed at temperatures higher than 453 K show a decrease in the optical energy gap (E_o). The value of E_o increases from 1.9 to 2.43 eV with increasing thickness of the As-prepared films from 60 to 140 nm. The effect of thickness on high frequency dielectric constant (?_∞) and carrier concentration (N) is also studied. The crystalline structures of the As_45.2Te_46.6In_8.2 thin films resulting from heat treatment of the As-prepared film at different elevated temperatures is studied by X-ray diffraction. An amorphous-crystalline transformation is observed after annealing at temperatures higher than 453 K. The electrical conductivity at low temperatures is found due to the electrons transport by hopping among the localized states near the Fermi level. With annealing the films at temperatures higher than 473 K (the crystallization onset temperature) for 1 h, the electrical conductivity increases and the activation energy decreases, which can be attributed to the amorphous-crystalline transformations.     

Influence of indium content on the optical, electrical and crystallization kinetics of Se100−xInxthin films deposited by flash evaporation technique

Thin films of Se _100−xIn_x (x=10, 20 and 30 at%) have been prepared by the flash evaporation technique. The effect of the indium content on optical band gap of the Se_100−x In_x films has been investigated by the optical characterization. The optical band gap values of the Se_100−x In_x thin films were determined and are found to decrease with increasing indium content. This indium content changes the width of localized states in the optical band gaps of the thin films. It was found that the optical band gap, E_g, of the Se_100−x In_x films changes from 1.78 to 1.37 eV with increasing indium content from 10 to 30 at%, while the width of localized states in optical band gap changes from 375 to 342 meV. The temperature dependence of the dark electrical conductivity were studied in the temperature range 303-433 K and revealed two activation energies providing two electrical conduction mechanisms. The activation energy of the Se_100−x In_x films in the high temperature region changes from 0.49 to 0.32 eV with increasing indium content from 10 to 30 at%, while the hopping activation energy in the lower temperature region changes from 0.17 to 0.22 meV. The change in the electrical conductivity with time during the amorphous-to-crystalline transformation is recorded for amorphous Se_100−xIn_x films at two points of isothermal temperatures 370 and 400 K. The formal crystallization theory of Avrami has been used to calculate the kinetic parameters of crystallization.     

Dielectric properties and conductivity in CuO and MoO3 doped borophosphate glasses

A novel set of glasses of the type (B₂O₃)_0.10-(P₂O₅)_0.40-(CuO)_0.50−x-(MoO₃)_x, 0.05≤x≥0.50, have been investigated for dielectric properties in the frequency range 100 Hz-100 kHz and temperature range 300-575 K. From the total conductivity derived from the dielectric spectrum the frequency exponent, s, and dc and ac components of the conductivity were determined. The temperature dependence of dc and ac conductivities at different frequencies was analyzed using Mott's small polaron hopping model, and the high temperature activation energies have been estimated and discussed. The observed initial decrease in conductivity (ac and dc) and increase in activation energy with the addition of MoO₃ have been understood to be due to the hindrance offered by the Mo⁺ ions to the electronic motions. The observed peak-like behavior in conductivity (dip-like behavior in activation energy) in the composition range 0.20-0.50 mol fractions of MoO₃ may be due to mixed transition effect occurring in the present glasses. The temperature dependence of frequency exponent, s, has been analyzed using different theoretical models. It is for the first time that the mixed transition metal ion (TMI) doped borophosphate glasses have been investigated for dielectric properties and conductivity over wide temperature and frequency ranges and the data have been subjected to a thorough analysis.     

Electronic conductivity and thermopower of Ca2NaMg2V3O12−x garnet

Results are reported from conductivity and thermoelectric power measurements on partially reduced Ca₂NaMg₂V₃O_12?x, with x < 5.10^?2, at temperatures of 300–1100 K. The conductivity is thermally activated with activation energies 0.26 ? E_a ? 1.28 eV for differently reduced samples. The thermopower is temperature independent in the 300–800 K region. These results are shown to be consistent with the adiabatic hopping of small polarons localised on the vanadium sublattice, where defect interactions result in the formation of multiple conduction pathways.     

Electrical properties of SrBi2(Nb0.5Ta0.5)2O9 ceramics

Aurivillius SrBi₂(Nb_0.5Ta_0.5)₂O₉ (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. Scanning electron microscopy was applied to investigate the grain structure. The XRD studies revealed an orthorhombic structure in the SBNT 50/50 with lattice parameters a=5.522 Å, b=5.511 Å and c=25.114 Å. The dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material. Its occurrence was ascribed to the presence of ionized space charge carriers such as oxygen vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. The temperature dependence of various electrical properties was determined and discussed. The thermal activation energy for the grain electric conductivity was lower in the high temperature region (T>303.6 °C, E_a−ht=0.47 eV) and higher in the low temperature region (T<303.6 °C, E_a−lt=1.18 eV).