Study on the adsorption of fluorescein on Ag(1 1 0) substrate

The adsorption of fluorescein on the Ag(1 1 0) surface has been investigated by the first-principles pseudopotential method. Various adsorption geometries have been calculated and the energetically most favorable structure of fluorescein/Ag(1 1 0) was identified. The fluorescein molecule, in most favorable structure, is on hollow site, and the adsorption energy is 2.34 eV. Here the adsorption sites refer to the positions at the first layer of the substrate where the middle carbon atom of the fluorescein molecule is located. The bonding strength of the fluorescein molecule to the Ag substrate is site selective, being determined by electron transfer to the oxygen atoms of the molecule and local electrostatic attraction between the oxygen atoms and the silver atoms.     

Corrosion of aluminium components studied with MIES, UPS and XPS

We use X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and metastable impact electron spectroscopy (MIES) to investigate the corrosion of aluminium components. Clean aluminium films were prepared under ultrahigh vacuum (UHV) conditions and exposed to water and NaCl. We attempt to provide a model for the mechanism of this interaction and its effects on the durability of the components.     

Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation

A SiGe-on-insulator (SGOI) structure with high Ge content and low density of dislocations is fabricated by a modified Ge condensation technique. The formation and elimination of stacking faults during condensation process are analyzed by transmission electron microscopy. A Si_0.19Ge_0.81OI substrate is fabricated utilizing two steps of oxidation and intermittent annealing. The time of oxidation or annealing at 900 °C is essential for the elimination of stacking faults in high Ge content SGOI substrate. The surface morphology of SGOI is investigated by atomic force microscopy and the defect density is evaluated from wet etching method. After the final condensation, the surface root-mean-square roughness (rms) of SiGe layer is kept below 1 nm and the threading defect density is controlled around 10⁴ cm⁻². The smooth surface and integrated lattice structure of SiGe layer indicate that the SGOI is suitable for heteroepitaxial growth of strained Ge, GaAs and III-V compounds.     

Si cleaning method without surface morphology change by cyanide solutions

Hydrogen cyanide (HCN) aqueous solutions can remove copper contaminants from Si surfaces more effectively than hydrochloric acid/hydrogen peroxide mixture (HPM) and sulfuric acid/hydrogen peroxide mixture (SPM). When pH of the HCN solutions is adjusted at 9, Si surface morphology is not changed, while when pH exceeds 10, the Si surfaces are considerably roughed. AFM measurements show that Cu contaminants are present in the form of particles on the bare Si surfaces. XPS measurements show that the particles consist of metallic Cu. The Cu particle height decreases almost linearly with the cleaning time, and the Cu surface concentration decreases exponentially with it. It is concluded that Cu particles gradually dissolve into the HCN aqueous solutions by the direct reaction with cyanide ions at the surface of the Cu particles.     

The effect of cerium and lanthanum surface treatments on early stages of oxidation of A361 aluminium alloy at high temperature

X-ray photoelectron spectroscopy analysis has been used to study the surface of A361 aluminium alloy after electrodeposition of cerium and lanthanum compounds followed by oxidation tests in air at 100-500 °C for 2 h. Cerium and lanthanum oxide deposits are found on the β-AlFeSi second phase particles and to a lesser extent on the eutectic Al-Si areas, while the α-Al phase is covered with a thin aluminium oxide film. This uneven deposition may be related either to a preferential nucleation and growth process on active interfaces or to the differing electrical conductivity of the phases and intermetallic compounds of the alloy. Initial stages of oxidation of A361 alloy disclosed thickening of the aluminium oxide layer and Mg enrichment at the surface, especially above 400 °C. Rare earth deposits revealed two different effects: reduced Mg diffusion and enhanced thickening of the aluminium oxide film. A distinctive behaviour of Ce oxide appears at 300-500 °C related with Ce(III) to Ce(IV) transition.     

Room-temperature ferromagnetism in Dy films doped with Ni

Temperature, magnetic field and spectral dependences of magneto-optical effects (MOEs) in bi-layer films Dy_(1−x)Ni_x-Ni and Dy_(1−x)(NiFe)_x-NiFe were investigated, x changes from 0 to 0.06. Peculiar behavior of the MOEs was revealed at temperatures essentially exceeding the Curie temperature of bulk Dy which is explained by the magnetic ordering of the Dy layer containing Ni under the action of two factors: Ni impurities distributed homogeneously over the whole Dy layer and atomic contact of this layer with continues Ni layer. The mechanism of the magnetic ordering is suggested to be associated with the change of the density of states of the alloy Dy_(1−x)Ni_x owing to hybridization with narrow peaks near the Fermi level character for Ni.     

AC plasma electrolytic oxidation of magnesium with zirconia nanoparticles

The incorporation of monoclinic zirconia nanoparticles and their subsequent transformation is examined for coatings formed on magnesium by plasma electrolytic oxidation under AC conditions in silicate electrolyte. The coatings are shown to comprise two main layers, with nanoparticles entering the coating at the coating surface and through short-circuit paths to the region of the interface between the inner and outer coating layers. Under local heating of microdischarges, the zirconia reacts with magnesium species to form Mg₂Zr₅O₁₂ in the outer coating layer. Relatively little zirconium is present in the inner coating layer. In contrast, silicon species are present in both coating layers, with reduced amounts in the inner layer.     

Oxidation of a cesium-covered Ni (1 1 0) surface studied by metastable-induced electron spectroscopy

An initial stage of oxidation of a cesium-covered Ni (1 1 0) surface has been studied by metastable-induced electron spectroscopy (MIES) and low-energy electron diffraction (LEED). The MIES brought spectra with Cs 6s induced peak (P_6s), Cs 5p (P_5p), O 2p induced peak (P_ox) and a structure related to the substrate Ni 3d states (P_3d). The work function change Δφ showed an oscillatory behavior in the progress of surface oxidation. The process is divided into three stages: (i) at low O₂ exposures, Δφ > 0 with unchanging P_5p and P_6s; (ii) at moderate exposures, Δφ < 0 with a drastic decrease in the P_6s intensity; (iii) at higher exposures, Δφ > 0 with shifts of peaks P_5p and P_ox to higher energies, together with an appearance of peak P_3d. A three-step model of initial oxidation of alkali-covered Ni (1 1 0) surfaces is presented.     

Coating formation by plasma electrolytic oxidation on ZC71/SiC/12p-T6 magnesium metal matrix composite

Plasma electrolytic oxidation (PEO) of a ZC71/SiC/12p-T6 magnesium metal matrix composite (MMC) is investigated in relation to coating growth and corrosion behaviour. PEO treatment was undertaken at 350 mA cm⁻² (rms) and 50 Hz with a square waveform in stirred 0.05 M Na₂SiO₃.5H₂O/0.1 M KOH electrolyte. The findings revealed thick, dense oxide coatings, with an average hardness of 3.4 GPa, formed at an average rate of ∼1 μm min⁻¹ for treatment times up to 100 min and ∼0.2 μm min⁻¹ for later times. The coatings are composed mainly of MgO and Mg₂SiO₄, with an increased silicon content in the outer regions, constituting <10% of the coating thickness. SiC particles are incorporated into the coating, with formation of a silicon-rich layer at the particle/coating interface due to exposure to high temperatures during coating formation. The distribution of the particles in the coating indicated growth of new oxide at the metal/coating interface. The corrosion rate of the MMC in 3.5% NaCl is reduced by approximately two orders of magnitude by the PEO treatment.     

Preparation and characterization of carbonate terminated polycrystalline Al2O3/Al films

X-ray photoelectron spectroscopy (XPS) was applied to investigate the surface reactivity of polycrystalline Al films in contact with a gas mixture of carbon dioxide and oxygen at room temperature. Based on the characterization of interactions between these substrates and the individual gases at selected exposures, various surface functionalities were identified. Simultaneously dosing both carbon dioxide and oxygen is shown to create surface-terminating carbonate species, which contribute to inhibiting the formation of an Al₂O₃ layer. Finally, a reaction scheme is suggested to account for the observed dependence of surface group formation on the dosing conditions.     

Comparative study of the GaAs(1 0 0) surface cleaned by atomic hydrogen

In attempt to correlate electronic properties and chemical composition of atomic hydrogen cleaned GaAs(1 0 0) surface, high-resolution photoemission yield spectroscopy (PYS) combined with Auger electron spectroscopy (AES) and mass spectrometry has been used. Our room temperature investigation clearly shows that the variations of surface composition and the electronic properties of a space charge layer as a function of atomic hydrogen dose display three successive interaction stages. There exists a contamination etching stage which is observed up to around 250 L of atomic hydrogen dose followed by a transition stage and a degradation stage which is observed beyond 700 L of exposure. In the first stage, a linear shift in the surface Fermi level is observed towards the conduction band by 0.14 eV, in agreement to the observed restoration of the surface stoichiometry and contamination removal. The next stage is characterized by a drop in ionization energy and work function, which quantitatively agrees with the observed Ga-enrichment as well as the tail of the electronic states attributed to the breaking As-dimers. As a result of the strong hydrogenation, the interface Fermi level E_F − E_v has been pinned at the value of 0.75 eV what corresponds to the degradation stage of the GaAs(1 0 0) surface that exhibits metallic density of states associated with Ga_As antisites defects. The results are discussed quantitatively in terms of the surface molecule approach and compared to those obtained by other groups.     

Stabilization in electrical characteristics of hydrogen-annealed ZnO:Al films

Al-doped ZnO (ZnO:Al) films prepared by RF magnetron co-sputtering at room temperature were thermally treated in hydrogen ambient at 300 °C to enhance the films’ characteristics for transparent conductive oxide applications. The electrical properties of the hydrogen-annealed films were improved and preserved in air ambient, even though the crystal structures of the films were not changed by the thermal treatment. The optical and oxygen bonding characteristics of ZnO:Al films manifested that absorbed oxygen species on the films were removed by the hydrogen-annealing process. These results supported that the development of the electrically reliable ZnO:Al films could be realized using the hydrogen-annealing process.     

Investigation of the Shockley surface state on clean and air-exposed Au (1 1 1)

Scanning tunneling microscopy (STM) and spectroscopy (STS) carried out in vacuum and air were used to study the electronic structure of the Au (1 1 1) surface in the range of 0.0-0.7 eV below the Fermi level. The STS experiment carried out in UHV showed the existence of the Shockley surface state (SS) located 0.48 eV below the Fermi level. STS carried out in air showed strong local maximum located 0.35 eV below the Fermi level. This maximum was ascribed to the SS shifted toward lower energy due to carbon and oxygen overlayer. To confirm that the SS could exist on the sample exposed to air we did ultraviolet photoemission spectroscopy (UPS) experiment on air-treated and clean Au (1 1 1). Our results suggest that the SS position initially measured at 0.38 eV below the Fermi level was shifted to 0.27 eV after air treatment. Additionally, the level of contamination was measured using X-ray photoelectron spectroscopy (XPS).     

Electronic structure and electron dynamics at the GaSb(0 0 1) surface studied by femtosecond pump-and-probe pulsed laser photoemission spectroscopy

Transiently excited electron states at the GaSb(0 0 1) surface have been studied by means of time- and angle-resolved photoemission spectroscopy based on a femtosecond laser system. A normally unpopulated surface electron state has been found at ∼250 meV above the valence band maximum with a strong confinement at the center of the surface Brillouin zone. The lifetime of transiently excited carriers at the intergap surface states has been found to be ∼11 ps, associated with rapid carrier diffusion.     

Adsorption performance and mechanism of 2,4,6-trinitrotoluene on a novel adsorption material polyvinylbenzyl acid/SiO2

Polyvinylbenzene (PVB, namely polystyrene, PSt) was grafted on the surface of silica gel particles by “grafting from” in solution polymerization system, and grafting particles PVB/SiO₂ were obtained. The chloromethylation reaction of the grafted polyvinylbenzene was performed using a novel chloromethylation reagent, 1,4-bis (chloromethyoxy) butane that is un-carcinogenic, and grafting particles CMPVB/SiO₂ were obtained. Subsequently, chloromethyl groups on grafting particles CMPVB/SiO₂ were hydrolyzed and oxidized, and finally adsorption material polyvinylbenzyl acid/SiO₂ (PVBA/SiO₂) was prepared. The adsorption performances and mechanism of 2,4,6-trinitrotoluene (TNT) on PVBA/SiO₂ were investigated through static methods. The experimental results showed that PVBA/SiO₂ possessed strong adsorption ability for TNT with adsorption amount of 26.84 mg g⁻¹. The empirical Freundlich isotherm was also found to agree well with the equilibrium adsorption data. In addition, pH was found to have great influence on the adsorption amount. Finally, PVBA/SiO₂ was observed to possess excellent reusability as well.     

XPS study of the surfactant film adsorbed onto growing titania nanoparticles

TiO₂ particles, prepared by following a sol-gel preparative route, were submitted to hydrothermal growing stages in the presence of an anionic surfactant, sodium dodecyl-sulfate (SDS), at solution pH values corresponding, respectively, to positive surface charges and to the isoelectric point of the oxide. The concentration of the surfactant in the aqueous solution was varied in order to produce different conditions of self-aggregation between the amphiphilic molecules. XPS analyses were performed on the aged and dried precursors to characterize the surfactant films adsorbed onto the oxide. The regions of Ti 2p, O 1s, and C 1s were specifically investigated. The samples, calcined at 600 °C, were characterized for phase composition-crystallinity, by X-ray diffraction, and for surface area. The role played by the oxide-surfactant interactions and by the surfactant self-aggregation phenomena in affecting the physico-chemical properties of the powders is discussed.     

The study on magnetite particles coated with bilayer surfactants

Magnetite particles were prepared by co-precipitation, then sodium oleic (SO) and sodium dodecyl benzene sulfonate (SDBS) were applied as inner and outer surfactants, respectively. IR and TG were used to study the surface adsorption of SO and SDBS on magnetite particles. The experimental results demonstrated that SO molecules were linked to the magnetite particles through chemical bond and SDBS coated on the surface of magnetite particles covered with SO by means of Van der Waals attraction. Furthermore, based on the adsorption isotherms of surfactants on the magnetite particles and the dependence of Zeta potential of particles on the surfactants concentrations, the adsorption mechanisms of these two surfactants on the magnetite particles were studied. The isotherm adsorption model for SO on magnetite particles showed excellent correlation to Langmuir type and the adsorption equation was (25 °C), while that for SDBS on magnetite particles coated with SO showed excellent consistence with Freundlich type and the adsorption equation was Γ = 0.32c^0.475 (25 °C). In addition, the results demonstrated that both SO and SDBS formed monolayer adsorption on the surface of magnetite particles.     

Initial oxidation of Mn surface studied by ultraviolet photoelectron spectroscopy and metastable induced electron spectroscopy

Metastable induced electron spectroscopy (MIES) was combined to ultraviolet photoelectron spectroscopy (UPS) to study the initial steps of manganese oxidation. Oxygen exposure directly led to the formation of MnO with no intermediate states. The MnO feature saturation observed by MIES and UPS techniques showed noticeable differences and proved the formation of several oxide layers. The oxidation kinetics was studied by measuring MnO features by UPS, which depend on the surface coverage by oxygen. We observe a decrease of oxygen adsorption probability with oxygen exposure. Oxidation proceeds by oxygen dissolution into the first layers to form a three-dimension MnO. This hypothesis was confirmed by our work function measurements.     

Comparative photoemission study of the electronic properties of L-CVD SnO2 thin films

In this work we present the results of comparative XPS and PYS studies of electronic properties of the space charge layer of the L-CVD SnO₂ thin films after air exposure and subsequent UHV annealing at 400 °C, with a special emphasis on the interface Fermi level position.From the centre of gravity of binding energy of the main XPS Sn 3d_5/2 line the interface Fermi level position E_F − E_v in the band gap has been determined. It was in a good correlation with the value estimated from the offset of valence band region of the XPS spectrum, as well as from the photoemission yield spectroscopy (PYS) measurements. Moreover, from the valence band region of the XPS spectrum and PYS spectrum two different types of filled electronic band gap states of the L-CVD SnO₂ thin films have been derived, located at 6 and 3 eV with respect to the Fermi level.     

Photoluminescence of hexagonal boron nitride: Effect of surface oxidation under UV-laser irradiation

We report on the UV laser-induced fluorescence of hexagonal boron nitride (h-BN) following nanosecond laser irradiation under vacuum and in different environments of nitrogen gas and ambient air. The observed fluorescence bands are tentatively ascribed to impurity and mono (V_N) or multiple (m-V_N with m=2 or 3) nitrogen vacancies. A structured fluorescence band between 300 and 350 nm is assigned to impurity-band transition and its complex lineshape is attributed to phonon replicas. An additional band at 340 nm, assigned to V_N vacancies on surface, is observed under vacuum and quenched by adsorbed molecular oxygen. UV-irradiation of h-BN under vacuum results in a broad asymmetric fluorescence at ∼400 nm assigned to m-V_N vacancies; further irradiation breaks more B-N bonds enriching the surface with elemental boron. However, no boron deposit appears under irradiation of samples in ambient atmosphere. This effect is explained by oxygen healing of radiation-induced surface defects. Formation of the oxide layer prevents B-N dissociation and preserves the bulk sample stoichiometry.