Al(001)表面上沉积Ti薄膜的分子动力学模拟

采用分子动力学模拟方法,研究了Ti原子连续沉积于Al(001)表面上的薄膜生长过程,分析了入射能量为0.1、5 eV和衬底温度为300、700 K时的界面结合及微观结构.模拟结果表明,增加入射能量和衬底温度,使Ti薄膜的表面越光滑;通过径向分布函数和键对分析技术对薄膜微观结构进行分析,发现衬底温度时薄膜微观结构影响较大,温度300 K及以下时,Ti薄膜主要是FCC结构,随着温度升高,FCC结构成分减少,无序结构成分增加,而入射能量则对薄膜微观结构没有明显影响.     

Plasma‐Substrate Interaction during Plasma Deposition on Polymers

The initial stage of film growth during plasma deposition on polymers determines many film properties such as morphology and structure, interphase formation and adhesion. Therefore, the plasma‐substrate interaction is investigated regarding the energy density during film growth, which is defined by the energy flux per depositing atom. The flux of film‐forming species and the flux of energetic particles were determined for metal sputtering (silver films) and plasma polymer deposition (amino‐functional hydrocarbon films). It is shown that enhanced energy densities can be obtained during the initial film growth due to reduced deposition rates and mixing with the polymer substrate (interphase formation). Thus, good adhesion on polymers such as polyethylene terephthalate (PET) has been achieved. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

GaP薄膜的射频磁控溅射沉积及其计算机模拟

以GaP为靶材采用射频磁控溅射法制备GaP红外光学薄膜，通过保持Ar Ⅰ 750nm发射光谱线强度不变获得了不同工艺参数，并对沉积过程进行了计算机模拟.功率较小、气压较大时，Ga和P的溅射率、输运效率及沉积到衬底时的能量均较小，Ga的溅射率及输运效率均大于P的，使薄膜沉积速率较低、薄膜中Ga的含量大于P的，GaP薄膜产生较大吸收.功率较大、气压较小时，Ga和P的溅射率、输运效率及沉积到衬底时的能量均增大，Ga的溅射率大于P的、但其输运效率小于P的，使GaP薄膜的沉积速率增大、薄膜中Ga与P的含量接近化学计量比，GaP薄膜的吸收降低，因此有利于制备厚度较大的GaP薄膜. 关键词： GaP 薄膜 射频磁控溅射 计算机模拟     

Improving light trapping and conversion efficiency of amorphous silicon solar cell by modified and randomly distributed ZnO nanorods

Three-dimensional （3D） nanostructures in thin film solar cells have attracted significant attention due to their appli- cations in enhancing light trapping. Enhanced light trapping can result in more effective absorption in solar cells, thus leading to higher short-circuit current density and conversion efficiency. We develop randomly distributed and modified ZnO nanorods, which are designed and fabricated by the following processes： the deposition of a ZnO seed layer on sub- strate with sputtering, the wet chemical etching of the seed layer to form isolated islands for nanorod growth, the chemical bath deposition of the ZnO nanorods, and the sputtering deposition of a thin Al-doped ZnO （ZnO：Al） layer to improve the ZnO/Si interface. Solar cells employing the modified ZnO nanorod substrate show a considerable increase in solar energy conversion efficiency.     

点火黑腔用铝铜复合芯轴的制备及性能

选取纯度较高的1100铝棒作为加工模芯的原材料,利用金刚石车床精加工出表面粗糙度均方根值小于20 nm的铝模芯,采用磁控溅射的方法在铝模芯上制备厚度大于5 m的铜防护层,得到铝铜复合芯轴。对制备的铜防护层的表面微观结构、结晶性能、厚度一致性进行了分析测试,结果表明磁控溅射法制备的铜防护层沿(111)面择优生长,表面粗糙度均方根值小于30 nm,厚度一致性优于95%,圆柱度小于1 m。镀层与基底结合力强,可满足大厚度黑腔涂层的制备需求。     

Si(001)基片上反应射频磁控溅射ZnO薄膜的两步生长方法

利用反应射频磁控溅射技术，采用两步生长方法制备了ZnO薄膜，探讨了基片刻蚀时间和低温过渡层沉积时间对ZnO薄膜生长行为的影响.研究结果表明，低温ZnO过渡层的沉积时间所导致的薄膜表面形貌的变化与过渡层在Si(001)表面的覆盖度有关.当低温过渡层尚未完全覆盖基片表面时，ZnO薄膜的表面岛尺度较小、表面粗糙度较大，薄膜应力较大；当低温过渡层完全覆盖Si(001)基片后，ZnO薄膜的表面岛尺度较大、表面粗糙度较小，薄膜应力较小.基片刻蚀时间对薄膜表面形貌的影响与低温过渡层的成核密度有关.随着刻蚀时间的增加，ZnO薄膜的表面粗糙度逐渐下降，表面形貌自仿射结构的关联长度逐渐减小. 关键词： ZnO薄膜 反应射频磁控溅射 两步生长 形貌分析     

高温下金属薄膜生长初期的模拟研究

采用实际的生长模型和物理参量,用Monte Carlo方法对高温下金属薄膜的生长过程进行了模拟研究.综合考虑了原子沉积、扩散、成核、生长和扩散原子的再蒸发、原子沿岛周界扩散和岛的合并等众多过程后,模拟得到与实验结果相当一致的薄膜生长形貌及其相应的定量结果.通过动态统计薄膜生长过程中的岛数目及薄膜生长率,得到实验中不易直接获得的高温下薄膜生长的许多细节,如岛数目和薄膜生长率随表面温度、覆盖度变化的详细情况等 关键词： 薄膜 Monte Carlo模拟 成核 岛密度 薄膜生长率     

高择优取向铌酸锶钡薄膜的射频磁控溅射制备

采用溶胶-凝胶法在(100)Si单晶上预先制备出掺钾(K)的铌酸锶钡(SBN)缓冲层,利用射频磁控溅射法在缓冲层KSBN上沉积出高择优取向的铌酸锶钡薄膜,获得了磁控溅射法制备择优取向铌酸锶钡薄膜的相关工艺参数,研究发现,KSBN缓冲层能够很有效地克服衬底与SBN薄膜之间较大的晶格失配,在氧气氩气的比例为1∶2,工作气压为10 Pa,溅射功率300 W,衬底温度300℃,退火温度为800℃的工艺条件下,能够获得c轴高度择优取向的铌酸锶钡铁电薄膜.利用X射线衍射仪,原子力显微镜等仪器分析了薄膜 关键词： 磁控溅射 高择优取向 p-n结效应     

制备工艺条件对SiO2薄膜非均质特性的影响

薄膜材料的生长过程随镀膜机尺寸的增大而呈现新的规律,为制备膜层均匀性好、材料均质的大尺寸光学元件,分别在不同离子源能量、沉积压强、基板加热温度及基板转速条件下,采用离子辅助电子束蒸发方法制备了不同单层SiO2薄膜样品;利用分光光度计及椭偏仪分别对样品的透过率及椭偏参数进行测量,并对测量结果进行拟合得到不同样品的折射率及非均质特性。实验结果表明,工件架转速是使大尺寸SiO2薄膜材料产生非均质特性的主要影响因素,离子源能量、基板温度、沉积压强通过影响材料生长过程对材料的非均质特性产生调控;对于大尺寸薄膜光学元件,工件架转速存在限制的条件下,优化其他工艺参数可以获得均质SiO2薄膜材料,该结果对于制备具有优良性能的大尺寸薄膜光学元件具有借鉴意义。     

制备工艺条件对SiO2薄膜非均质特性的影响

薄膜材料的生长过程随镀膜机尺寸的增大而呈现新的规律,为制备膜层均匀性好、材料均质的大尺寸光学元件,分别在不同离子源能量、沉积压强、基板加热温度及基板转速条件下,采用离子辅助电子束蒸发方法制备了不同单层SiO2薄膜样品;利用分光光度计及椭偏仪分别对样品的透过率及椭偏参数进行测量,并对测量结果进行拟合得到不同样品的折射率及非均质特性。实验结果表明,工件架转速是使大尺寸SiO2薄膜材料产生非均质特性的主要影响因素,离子源能量、基板温度、沉积压强通过影响材料生长过程对材料的非均质特性产生调控;对于大尺寸薄膜光学元件,工件架转速存在限制的条件下,优化其他工艺参数可以获得均质SiO2薄膜材料,该结果对于制备具有优良性能的大尺寸薄膜光学元件具有借鉴意义。     

Influence of deposition pressure and power on characteristics of RF-Sputtered Mo films and investigation of sodium diffusion in the films

Mo films deposited by DC sputtering are widely used as back contact in CIGS and CZTS based thin film solar cells. However, there have been only a few studies on the deposition of Mo films by RF sputtering method. In this context, Mo films on SLG substrates were prepared as a function of deposition pressure and power by using RF magnetron sputtering method to contribute to this shortcoming. Mo films were deposited at 250 °C substrate temperature by using 20, 15, 10 mTorr Ar pressures at 120 W RF power and 10 mTorr Ar pressure at 100 W RF power. Structural, morphological and reflectivity properties of RF-sputtered Mo films were clarified by XRD, AFM, FE-SEM and UV–Vis measurements. In addition, due to sodium incorporation from SLG substrate to the absorber layer through Mo back contact layer is so essential in terms of improving the conversion efficiency values of CIGS and CZTS thin film solar cell devices, the effects of Na diffusion in the films were analyzed with SIMS depth profile. The electrical properties of the films such as mobility, carrier density and resistivity were determined by Hall Effect measurements. It was found that Mo films prepared at 120 W, 10 mtorr and 250 °C substrate temperature and then annealed at 500 °C for 30 min, had resistivity as low as 10⁻⁵ Ω cm, as well as higher amount of Na incorporation than other films.     

MgO(111)上NbN和AlN薄膜的生长研究

在制备NbN/AlN/NbN隧道结的工艺过程中,为了获得具有优质单晶结构的NbN薄膜,我们在MgO(111)基片上探索了直流溅射法制备NbN薄膜的生长工艺条件,XRD研究分析表明,我们获得了单晶结构良好的NbN薄膜;为了支持作为上电极的NbN薄膜的生长,也需要良好的AlN薄膜用作势垒层,我们采用射频磁控溅射设备和纯净的Al靶对AlN薄膜进行了制备研究.实验结果表明,所获得的AlN薄膜具有六方c-轴取向,并讨论了衬底和薄膜界面处可能的结构情况.     

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用射频等离子体增强非平衡磁控溅射在Si100基底上沉积了金属Cu膜。研究了偏压,射频功率和磁场等沉积参数对膜性能的影响。用扫描电子显微镜(SEM)、原子力显微镜(AFM)、X射线衍射(XRD)和电子能谱(EM)检测了膜的表面形貌,结构和成分。结果表明,射频放电有利于表面均匀光滑、电导率高的Cu沉积膜的形成;沉积参数对沉积膜的性能有重要的影响。     

Direct Monitoring of Thickness and Refractive Index of Optical Thin Film Deposited on Fiber End-face

We propose a system for depositing thin films on waveguides which enables low-temperature deposition and precise control of the refractive index and film thickness. It is composed of a conventional ion-beam sputtering (IBS) system and a new system for directly monitoring film characteristics during deposition. We controlled refractive indices over a wide range from 1.52 to 1.97 by moving the sputtering targets (SiO₂ and Si₃N₄) in the IBS system. The refractive index or film thickness was in-situ monitored by observing the optical power reflected from the end-face of a monitoring fiber set in the deposition chamber. Antireflection coating films were successfully deposited on a fiber end-face and a laser diode chip facet with low reflectivity from 0.05 to 0.07%. This deposition system is attractive for constructing highly functional optical devices for future photonic networks.     

新型的覆纳米粒子薄膜阴极的研究

采用直流磁控溅射的方法制备出Ir金属纳米粒子薄膜.利用扫描电子显微镜分析了纳米粒子的形态和分布以及不同工艺条件对粒子粒径及形貌的影响,表明纳米粒子的大小可通过调节溅射气体压强来控制.在25%孔度的W海绵基体内浸入6∶1∶2铝酸盐发射物质,然后在其表面沉积上厚度为200—500 nm的纳米粒子薄膜层,最后在H₂气中1200℃烧结,即制成了新型纳米粒子薄膜阴极.利用阴极发射微观均匀性测试仪对纳米粒子薄膜阴极和传统覆膜阴极的热电子发射的均匀性进行了对比研究.采用飞行时间质谱仪测试了真空本底、纳米粒子薄膜阴极、传统覆膜阴极等各种阴极蒸发物的成分,研究了阴极蒸发速率与阴极温度的关系,比较了不同阴极蒸发速率的大小.研究了Ba-W阴极覆上纳米粒子薄膜后的发射特性. 关键词： 纳米粒子薄膜 热阴极 发射均匀性 蒸发     

Progress in research of GaN-based LEDs fabricated on SiC substrate

The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated.It is found that the Al GaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with Al N buffer layer.To increase the light extraction efficiency of GaN-based LEDs on Si C substrate,flip-chip structure and thin film flip-chip structure were designed and optimized.The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 m A.At 350 m A,the output power,the Vf,the dominant wavelength,and the wall-plug efficiency of the blue LED were 644 m W,2.95 V,460 nm,and 63%,respectively.     

高质量宽带隙立方氮化硼薄膜的研究进展

文章着重介绍了最近研制出的高质量宽带隙立方氮化硼薄膜的三种制备方法和结构特性 :(1)用射频溅射法在Si衬底上制备出立方相含量在 90 %以上 ,Eg>6 .0eV的c-BN薄膜 ;(2 )用离子束辅助的化学气相沉积法(CVD) ,在金刚石上外延生长出立方含量达 10 0 %的单晶c -BN薄膜 ;(3)用微波电子回旋共振CVD法 (MW -ECR-CVD)在金刚石上外延生长出高纯c-BN薄膜 .这些高纯c -BN薄膜 ,可应用于制作各种半导体 (主要是高温、高频大功率 )电子器件 .     

Epitaxial growth of Al on Si(1 1 1) with Cu buffer layers

The structure of thin Al films grown on Si(1 1 1) with thin Cu buffer layers has been investigated using synchrotron radiation photoemission spectroscopy. A thin Cu(1 1 1) layer between the Si(1 1 1) substrate and an Al film may enhance quantum well effects in the Al film significantly. The strength of quantum well effects has been investigated qualitatively with respect to the thickness of the Cu buffer layer and to the Al film thickness. Deposition of Cu on Si(1 1 1)7 × 7 leads to formation of a disordered silicide layer in an initial regime before a well-ordered Cu(1 1 1) film is formed after deposition of the equivalent of 6 layers of Cu. In the regime below 6 layers of Cu the disorder is transferred to Al layers subsequently grown on top. The initial growth of up to 8 layers of Al on a well-ordered Si/Cu(1 1 1) layer leads to a disordered film due to the lattice mismatch between the two metals. When the Cu buffer layer and the Al over-layer are above 6 and 8 layers, respectively the Al film shows sharp low energy electron diffraction patterns and very sharp quantum well peaks in the valence band spectra signalling good epitaxial growth.     

射频溅射功率对AZO薄膜结构及光电特性和热稳定性的影响

采用射频磁控溅射法,在玻璃基片上制备了ZnO:Al(AZO)透明导电薄膜。用X射线衍射(XRD)仪、紫外-可见分光光度计、方块电阻测试仪和台阶仪对不同溅射功率下Al掺杂ZnO薄膜的结晶、光学、电学性能、沉积速率以及热稳定性进行了研究。研究结果表明:不同溅射功率下沉积的AZO薄膜具有六角纤锌矿结构,均呈c轴择优取向;(002)衍射峰强和薄膜的结晶度随溅射功率的提高逐渐增强;随溅射功率的提高,AZO薄膜的透射率有所下降,但在可见光(380～780nm)范围内平均透射率仍80%;薄膜的方块电阻随溅射功率的增加逐渐减小;功率为160～200W时,薄膜的热稳定性最好,升温前后方块电阻变化率为13%。     

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

LaAlO₃ (LAO) is explored in this work to replace SiO₂ as the gate dielectric material in metal–oxide–semiconductor field effect transistor. Amorphous LAO gate dielectric films were deposited on Si (0 0 1) substrates by low pressure metalorganic chemical vapor deposition using La(dpm)₃ and Al(acac)₃ sources. The effect of processing parameters such as deposition temperature and precursor vapor flux on growth, structure, morphology, and composition of LAO films has been investigated by various analytical methods deeply. The film growth mechanism on Si is reaction limiting instead of mass transport control. The reaction is thermally activated with activation energy of 37 kJ/mol. In the initial growth stage, Al element is deficient due to higher nucleation barrier on Si. The LAO films show a smooth surface and good thermal stability and remain amorphous up to a high temperature of 850 °C. The electrical properties of amorphous LAO ultrathin films on Si have also been evaluated, indicating LAO is suitable for high k gate dielectric applications.