Tungsten ions produced by infrared pulsed laser irradiation

Energetic ions have been obtained irradiating a tungsten target with a Q-switched Nd:Yag laser, 1064?nm wavelength, 9?ns pulse width, 900?mJ maximum pulse energy and power density of the order of 10¹⁰?W/cm². The laser-target interaction induces a strong metal etching with production of plasma in front of the target. The plasma contains neutrals and ions with high charge state. Time-of-flight measurements are presented for qualitative analysis of the ion production. A cylindrical electrostatic ion analyzer permits measuring of the yield of emitted ions, the charge state of detected ions and the ion energy distribution. Measurements indicate that, at a laser fluence of the order of 100?J/cm², the charge state may reach 9+ and the ion energy reaches about 5?keV. The ion energy distribution is given as a function of the charge state. Experimental results indicate that an electrical field is developed along the normal to the plane of the target surface, which accelerates the ions up to high velocity. The ion velocity distributions follow a “shifted Maxwellian distribution”, which the author has corrected for the Coulomb interactions occurring inside the plasma.     

Non-equilibrium plasma production by pulsed laser ablation of gold

A gold target has been irradiated with a Q-switched Nd:Yag laser having 1064?nm wavelength, 9?ns pulse width, 900?mJ maximum pulse energy and a maximum power density of the order of 10¹⁰?W/cm². The laser–target interaction produces a strong gold etching with production of a plasma in front of the target. The plasma contains neutrals and ions having a high charge state. Time-of-flight (TOF) measurements are presented for the analysis of the ion production and ion velocity. A cylindrical electrostatic deflection ion analyzer permits measurement of the yield of the emitted ions, their charge state and their ion energy distribution. Measurements indicate that the ion charge state reaches 6⁺ and 10⁺ at a laser fluence of 100?J/cm² and 160?J/cm², respectively. The maximum ion energy reaches about 2?keV and 8?keV at these low and high laser fluences, respectively. Experimental ion energy distributions are given as a function of the ion charge state. Obtained results indicate that electrical fields, produced in the plume, along the normal to the plane of the target surface, exist in the unstable plasma. The electrical fields induce ion acceleration away from the target with a final velocity dependent on the ion charge state. The ion velocity distributions follow a “shifted Maxwellian distribution”, which the authors have corrected for the Coulomb interactions occurring inside the plasma.     

Change of sheet resistance of high purity alumina ceramics implanted by Cu and Ti ions

High purity alumina ceramics (99% Al₂O₃) was implanted by copper ion and titanium ion in a metal vapour vacuum arc (MEVVA) implanter, respectively. The influence of implantation parameters was studied varying ion fluence. The samples were implanted by 68 keV Cu ion and 82 keV Ti ion with fluences from 1 × 10¹⁵ to 1 × 10¹⁸ ions/cm², respectively. The as-implanted samples were investigated by scanning electron microscopy (SEM), glancing X-ray diffraction (GXRD), scanning Auger microscopy (SAM), and four-probe method. Different morphologies were observed on the surfaces of the as-implanted samples and clearly related to implantation parameters. For both ion implantations, the sheet resistances of the alumina samples implanted with Cu and Ti ion fluences of 1 × 10¹⁸ ions/cm², respectively, reached the corresponding minimum values because of the surface metallization. The experimental results indicate that the high-fluence ion implantation resulted in conductive layer on the surface of the as-implanted high purity alumina ceramics.     

Temperature measurements in plasmas generated by using lasers at different intensities

The temperature of laser-generated pulsed plasmas is an important property that depends on many parameters, such as the particle species and the time elapsed from the laser interaction with the matter and the surface characteristics.

Laser-generated plasmas with low intensity (<10¹⁰ W/cm²) at INFN-LNS of Catania and with high intensity (>10¹⁴ W/cm²) in PALS laboratory in Prague have been investigated in terms of temperatures relative to ions, electrons, and neutral species. Time-of-flight (ToF) measurements have been performed with an electrostatic ion energy analyzer (IEA) and with different Faraday cups, in order to measure the ion and electron average velocities. The IEA was also used to measure the ion energy, the ion charge state, and the ion energy distribution.

The Maxwell–Boltzmann function permitted to fit the experimental data and to extrapolate the ion temperature of the plasma core.

The velocity of the neutrals was measured with a special mass quadrupole spectrometer. The Nd:Yag laser operating at low intensity produced an ion temperature core of the order of 400 eV and a neutral temperature of the order of 100 eV for many ablated materials. The ToF of electrons indicates the presence of hot electron emission with an energy of ～1 keV.     

Non-equilibrium plasma production by pulsed laser ablation of gold

A gold target has been irradiated with a Q-switched Nd:Yag laser having 1064\,\hbox{nm} wavelength, 9\,\hbox{ns} pulse width, 900\,\hbox{mJ} maximum pulse energy and a maximum power density of the order of 10^{10}\,\hbox{W}/\hbox{cm}^2 . The laser-target interaction produces a strong gold etching with a production of a plasma in front of the target. The plasma contains neutrals and ions having high charge state. Time-of-flight measurements are presented for the analysis of the ion production and ion velocity. A cylindrical electrostatic deflection ion analyzer permits to measure the yield of the emitted ions, their charge state and their ion energy distribution. Measurements indicate that the ion charge state reaches 6^+ and 10^+ at a laser fluence of 100\,\rm{J/cm}^2 and 160\,\rm{J/cm}^2 , respectively. The maximum ion energy reaches about 2\,\hbox{keV} and 8\,\hbox{keV} at these low and at high laser fluence, respectively. Experimental ion energy distributions are given as a function of the ion charge state. Obtained results indicate that electrical fields, produced in the plume, along the normal to the plane of the target surface, exist in the unstable plasma. The electrical fields induce ion acceleration away from the target with a final velocity dependent on the ion charge state. The ion velocity distributions follow a "shifted Maxwellian distribution", which the authors have corrected for the Coulomb interactions occurring inside the plasma.     

Modification of semiconductor materials using laser-produced ion streams additionally accelerated in the electric fields

The laser-produced ion stream may be attractive for direct ultra-low-energy ion implantation in thin layer of semiconductor for modification of electrical and optical properties of semiconductor devices. Application of electrostatic fields for acceleration and formation of laser-generated ion stream enables to control the ion stream parameters in broad energy and current density ranges. It also permits to remove the useless laser-produced ions from the ion stream designed for implantation.For acceleration of ions produced with the use of a low fluence repetitive laser system (Nd:glass: 2 Hz, pulse duration: 3.5 ns, pulse energy:∼0.5 J, power density: 10¹⁰ W/cm²) in IPPLM the special electrostatic system has been prepared. The laser-produced ions passing through the diaphragm (a ring-shaped slit in the HV box) have been accelerated in the system of electrodes. The accelerating voltage up to 40 kV, the distance of the diaphragm from the target, the diaphragm diameter and the gap width were changed for choosing the desired parameters (namely the energy band of the implanted ions) of the ion stream. The characteristics of laser-produced Ge ion streams were determined with the use of precise ion diagnostic methods, namely: electrostatic ion energy analyser and various ion collectors. The laser-produced and post-accelerated Ge ions have been used for implantation into semiconductor materials for nanocrystal fabrication. The characteristics of implanted samples were measured using AES.     

Impact of yttrium ion implantation on corrosion behavior of laser beam welded zircaloy-4 in sulfuric acid solution

In order to study the effect of yttrium ion implantation on the aqueous corrosion behavior of laser beam welded zircaloy-4 (LBWZr4), The butt weld joint of zircaloy-4 was made by means of a carbon dioxide laser, subsequently the LBWZr4 samples were implanted with yttrium ion using a MEVVA source at an energy of 40 keV, with a fluence range from 1 × 10¹⁶ to 4 × 10¹⁶ ions/cm² at about 150 °C. Three-sweep potentiodynamic polarization measurement was employed to evaluate the aqueous corrosion behavior of yttrium-implanted LBWZr4 in a 0.5 M H₂SO₄ solution. Scanning electron microscopy (SEM) was used to examine the surface topographic character of the yttrium-implanted LBWZr4 before and after the potentiodynamic polarization measurement. The valences of the carbon, yttrium, and zirconium in the surface layer were analyzed by X-ray photoemission spectroscopy (XPS). It was found that a significant improvement was achieved in the aqueous corrosion resistance of yttrium-implanted LBWZr4 compared with that of the un-implanted LBWZr4. The mechanism of the corrosion resistance improvement of the yttrium-implanted LBWZr4 is probably due to the addition of the yttrium oxide dispersoid into the zirconium matrix.     

Surface morphology of Mn implanted Ge(1 0 0): A systematic investigation as a function of the implantation substrate temperature

Ge (1 0 0) wafers were implanted with 100 keV Mn⁺ ions with a dose of 2 × 10¹⁶ ions/cm² at different temperatures, ranging from 300 to 573 K. The surface morphology of implanted samples, analyzed with scanning electron microscopy and atomic force microscopy measurements, reveals for the 300-463 K implant temperature range the formation of a surface swelled and porous film, containing sponge-like structures. On the contrary, samples implanted in the 513-573 K temperature range present an atomically flat surface, with a roughness less than 1 nm, indicating that crystalline order has been preserved. X-ray photoemission spectroscopy depth profiling measurements indicate the presence of adsorbed oxygen in the porous layer of lower-temperature implanted samples, as well the presence of a large Mn concentration below the expected end of range for impinging ions. Mn and O concentrations at anomalously great depths are maximum in the 413 K implanted sample, indicating that the phenomenon of ion beam induced porosity is best favored at a well defined temperature.     

Chemical surface composition of the polyethylene implanted by Ag ions studied by phase imaging atomic force microscopy

High density polyethylene (HDPE) has been modified by Ag⁺ ion implantation with the energy of 60 keV. The total amount of implanted silver ions was 1, 5 and 12 × 10¹⁵ ions/cm². The surface topography was observed by atomic force microscopy (AFM), while the surface composition changes were detected using phase imaging AFM. Surface topography changes were studied in detail using 3D surface parameters analyses. The average roughness decreased for the implanted HDPE indicating the flattening of the surface. Phase AFM images indicated the homogenization of the polyethylene during ion implantation, while histogram analyses confirmed the change in surface composition.     

Acceleration of heavy multicharged ions up to 1 MeV from a cleaned solid target irradiated by a femtosecond laser pulse with an intensity of 10<Superscript>16</Superscript> W/cm<Superscript>2</Superscript>

A noticeable increase in the charge and energy of ions accelerated from a solid tungsten target irradiated by a femtosecond laser pulse with an intensity higher than 10¹⁶W/cm² has been found when the target surface is precleaned by a nanosecond laser pulse with an energy density of 3 J/cm². Tungsten ions with charges up to +29 and energies up to 1 MeV were detected in this case, while the charge and energy of tungsten ions from a target with an uncleaned surface do not exceed +3 and 12 keV, respectively.     

RBS analysis of ions implanted in light substrates exposed to hot plasmas laser-generated at PALS

Ge and Ta ion implantation of silicon and carbon substrates has been obtained at PALS Research Laboratory in Prague by using laser pulses of 400 ps duration, 438 nm wavelength, 10^14?16 W/cm² intensity. Substrates were exposed in vacuum at different distances from the target and at different angles with respect to the normal to the target surface. ‘On line’ measurements of ion energy were obtained with time-of-flight techniques by using an electrostatic deflector as ion energy analyzer. ‘Off line’ measurements of ion energy were obtained by Rutherford backscattering spectrometry (RBS) of 2.25 MeV He²⁺ beam at CEDAD Laboratory of Lecce University. The RBS spectra have given the depth profiles of the ion-implanted species and the implanted doses as a function of the laser intensity, angular position and target distance. A spectra deconvolution method based on the ion stopping power in the substrate matrix was applied in order to evidence the energy of the implanted ions. Measurements indicate that ions with energy ranging between 100 keV and 10 MeV and dose of the order of 10^14?16/cm² are implanted and that the process of ion implantation occurs mainly in substrates placed at little angles with respect to the normal to the target surface. Only a thin film deposition occurs for substrates placed at large angles with respect to the normal direction. Results indicate that the ion energies measured with the ‘on line’ and the ‘off line’ techniques are in good agreement.     

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Silicon carbide (SiC) films were synthesized by combined metal vapor vacuum arc (MEVVA) ion implantation with ion beam assisted deposition (IBAD) techniques. Carbon ions with 40 keV energy were implanted into Si(1 0 0) substrates at ion fluence of 5 × 10¹⁶ ions/cm². Then silicon and carbon atoms were co-sputtered on the Si(1 0 0) substrate surface, at the same time the samples underwent assistant Ar-ion irradiation at 20 keV energy. A group of samples with substrate temperatures ranging from 400 to 600 °C were used to analyze the effect of temperature on formation of the SiC film. Influence of the assistant Ar-ion irradiation was also investigated. The structure, morphology and mechanical properties of the deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and nanoindentation, respectively. The bond configurations were obtained from IR absorption and Raman spectroscopy. The experimental results indicate that microcrystalline SiC films were synthesized at 600 °C. The substrate temperature and assistant Ar-ion irradiation played a key role in the process. The assistant Ar-ion irradiation also helps increasing the nanohardness and bulk modulus of the SiC films. The best values of nanohardness and bulk modulus were 24.1 and 282.6 GPa, respectively.     

Low energy ion beams by laser interaction

We developed an ion accelerator with a double accelerating gap system supplied by two power generators of different polarity. The ions were generated by laser ion source technique. The laser plasma induced by an excimer KrF laser, freely expanded before the action of accelerating fields. After the first gap action, the ions were again accelerated by a second gap. The total acceleration can imprint a maximum ion energy up to 160 keV per charge state. We analysed the extracted charge from a Cu target as a function of the accelerating voltage at laser energy of 9, 11 and 17 mJ deposited on a spot of 0.005 cm². The peak of current density was 3.9 and 5.3 mA for the lower and medium laser energy at 60 kV. At the highest laser energy, the maximum output current was 11.7 mA with an accelerating voltage of 50 kV. The maximum ion dose was estimated to be 10¹² ions/cm². Under the condition of 60 kV accelerating voltage and 5.3 mA output current the normalized emittance of the beam measured by pepper pot method was 0.22 π mm mrad.     

Crystalline quality of 3C-SiC formed by high-fluence C-implanted Si

Carbon ions at 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at 400 °C to a fluence of 6.5 × 10¹⁷ ions/cm². Subsequent thermal annealing of the implanted samples was performed in a diffusion furnace at atmospheric pressure with inert nitrogen ambient at 1100 °C. Time-of-flight energy elastic recoil detection analysis (ToF-E ERDA) was used to investigate depth distributions of the implanted ions. Infrared transmittance (IR) and Raman scattering measurements were used to characterize the formation of SiC in the implanted Si substrate. X-ray diffraction analysis (XRD) was used to characterize the crystalline quality in the surface layer of the sample. The formation of 3C-SiC and its crystalline structure obtained from the above mentioned techniques was finally confirmed by transmission electron microscopy (TEM). The results show that 3C-SiC is directly formed during implantation, and that the subsequent high-temperature annealing enhances the quality of the poly-crystalline SiC.     

Effect of N ion implantation on the optical properties of an organometallic complex—Zinc cadmium thiocyanate single crystal

A highly efficient non-linear optical organometallic compound zinc cadmium thiocyanate (ZCTC) single crystal was grown by solvent evaporation method. The as grown single crystals were implanted with 45 keV N⁵⁺ ions having energy at various fluencies of 1 × 10¹⁵, 5 × 10¹⁵, 1 × 10¹⁶ and 5 × 10¹⁶ ions/cm². The surface modification induced by the ion implantation was studied using scanning electron microscopy. The UV spectrum shows an increase in absorbance with the increase in the dosage of the ions implanted. There is a red shift in the cut off wavelength due to implantation which may be attributed to the lattice damage produced during implantation. From the Raman spectra, it is observed that there is no shift in the peak positions or any extra peaks due to implantation confirming that the nitrogen ions are not substituted into the lattice. The FWHM, area and intensity of the Raman peak corresponding to CN stretching vibration were calculated and the influence of ion implantation on these parameters was discussed. The effect of implantation on the PL spectra was analysed and discussed in detail. The change in refractive index of the sample due to implantation was reported.     

Synthesis of molybdenum silicide by both ion implantation and ion beam assisted deposition

Two groups of Mo/Si films were deposited on surface of Si(1 0 0) crystal. The first group of the samples was prepared by both ion beam assisted deposition (IBAD) and metal vapor vacuum arc (MEVVA) ion implantation technologies under temperatures from 200 to 400 °C. The deposited species of IBAD were Mo and Si, and different sputtering Ar ion densities were selected. The mixed Mo/Si films were implanted by Mo ion with energy of 94 keV, and fluence of Mo ion was 5 × 10¹⁶ ions/cm². The second group of the samples was prepared only by IBAD under the same test temperature range. The Mo/Si samples were analyzed by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), sheet resistance, nanohardness, and modulus of the Mo/Si films were also measured. For the Mo/Si films implanted with Mo ion, XRD results indicate that phase of the Mo/Si films prepared at 400 and 300 °C was pure MoSi₂. Sheet resistance of the Mo/Si films implanted with Mo ion was less than that of the Mo/Si films prepared without ion implantation. Nanohardness and modulus of the Mo/Si films were obviously affected by test parameters.     

Ionization of iridium ions in the Dresden EBIT studied by X-ray spectroscopy of direct excitation and radiative recombination processes

Ir^q+ ( 41≤q≤64) ions with open-shell configurations have been produced in the electron beam of the room-temperature Dresden Electron Beam Ion Trap (Dresden EBIT) at electron excitation energies from 2 keV to 13 keV. X-ray emission from direct excitation processes and radiative capture in krypton-like to aluminium-like iridium ions is measured with an energy dispersive Si(Li) detector. The detected X-ray lines are analyzed and compared with results from multiconfigurational Dirac-Fock (MCDF) atomic structure calculations. This allows to determine dominant produced ion charge states at different electron energies. The analysis shows that at the realized working gas pressure of 5×10^-9mbar for higher charged ions the maximum ion charge state is not preferently determined by the chosen electron beam energy needed for ionization of certain atomic substates, but by the balance between ionization and charge state reducing processes as charge exchange and radiative recombination. This behaviour is also discussed on the basis of model calculations for the resulting ion charge state distribution. Received 12 July 2001 and Received in final form 10 September 2001     

Surface modification of indium tin oxide films by amino ion implantation for the attachment of multi-wall carbon nanotubes

Amino ion implantation was carried out at the energy of 80 keV with fluence of 5 × 10¹⁵ ions cm⁻² for indium tin oxide film (ITO) coated glass, and the existence of amino group on the ITO surface was verified by X-ray photoelectron spectroscopy analysis and Fourier transform infrared spectra. Scanning electron microscopy images show that multi-wall carbon nanotubes (MWCNTs) directly attached to the amino ion implanted ITO (NH₂/ITO) surface homogeneously and stably. The resulting MWCNTs-attached NH₂/ITO (MWCNTs/NH₂/ITO) substrate can be used as electrode material. Cyclic voltammetry results indicate that the MWCNTs/NH₂/ITO electrode shows excellent electrochemical properties and obvious electrocatalytic activity towards uric acid, thus this material is expected to have potential in electrochemical analysis and biosensors.     

XPS investigation of ion beam induced conversion of GaAs(0 0 1) surface into GaN overlayer

For the advance of GaN based optoelectronic devices, one of the major barriers has been the high defect density in GaN thin films, due to lattice parameter and thermal expansion incompatibility with conventional substrates. Of late, efforts are focused in fine tuning epitaxial growth and in search for a low temperature method of forming low defect GaN with zincblende structure, by a method compatible to the molecular beam epitaxy process. In principle, to grow zincblende GaN the substrate should have four-fold symmetry and thus zincblende GaN has been prepared on several substrates including Si, 3C-SiC, GaP, MgO, and on GaAs(0 0 1). The iso-structure and a common shared element make the epitaxial growth of GaN on GaAs(0 0 1) feasible and useful. In this study ion-induced conversion of GaAs(0 0 1) surface into GaN at room temperature is optimized. At the outset a Ga-rich surface is formed by Ar⁺ ion bombardment. Nitrogen ion bombardment of the Ga-rich GaAs surface is performed by using 2-4 keV energy and fluence ranging from 3 × 10¹³ ions/cm² to 1 × 10¹⁸ ions/cm². Formation of surface GaN is manifested as chemical shift. In situ core level and true secondary electron emission spectra by X-ray photoelectron spectroscopy are monitored to observe the chemical and electronic property changes. Using XPS line shape analysis by deconvolution into chemical state, we report that 3 keV N₂⁺ ions and 7.2 × 10¹⁷ ions/cm² are the optimal energy and fluence, respectively, for the nitridation of GaAs(0 0 1) surface at room temperature. The measurement of electron emission of the interface shows the dependence of work function to the chemical composition of the interface. Depth profile study by using Ar⁺ ion sputtering, shows that a stoichiometric GaN of 1 nm thickness forms on the surface. This, room temperature and molecular beam epitaxy compatible, method of forming GaN temperature can serve as an excellent template for growing low defect GaN epitaxial overlayers.     

Influence of the chemisorption state on the charge distribution of low energy Si scattered from I adatoms

The ion fractions of 5 keV Si⁺ ions singly scattered from iodine adatoms adsorbed on Al(1 0 0), Si(1 1 1) and pre-oxidized Si(1 1 1) were measured with time-of-flight spectroscopy. A considerable ion yield was observed, which did not change significantly with exit angle or I coverage. The mechanism of ion formation is assigned to valence electron resonant charge transfer (RCT) assisted by promotion of the Si ionization level. The yields are smaller than those of Si scattered from Cs adatoms, however, which suggests that electron tunneling from the occupied chemisorption states of the I adatom provides an additional neutralization channel.