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1.
The electronic structure of Cd3TeO6 has been studied in the terms of first-principles calculations based on the density functional theory in order to investigate their optical properties and In-substitution effects. It was found that the highly dispersed bottom of the conduction band formed from Cd-s orbitals is the origin of the high transparency and conductivity. Cd3TeO6 exhibited optical anisotropy in its main crystal axes, and the c-axis showed the most suitable crystal growth direction for obtaining a wide transparent region. A pronounced shift of the absorption edge was effectively observed by the In-substitution, reflecting the domination of the In-5s level in the conduction band near the Fermi level.  相似文献   

2.
The electronic structure and the optical properties of In6S7 crystal are calculated by the first-principles full-potential linearized augmented plane wave method (FP-LAPW) using density functional theory (DFT) in its generalized gradient approximation (GGA). The calculated band structure shows that the In6S7 is a semiconductor with a direct band gap in good agreement with experimental studies. Furthermore, the dielectric tensor and the optical properties, such as absorption coefficient, refractive index, extinction coefficient, energy-loss spectrum and reflectivity, are derived and analyzed in the study.  相似文献   

3.
An investigation on the structural stabilities and electronic properties of SrX (X =S, Se and Te) under high pressure is conducted using the first-principles calculation based on density functional theory (DFT) with the plane wave basis set as implemented in the CASTEP code. Our results demonstrate that the sequence of the pressure-induced phase transition of the three compounds is the NaCl-type (B1) structure (Fm3rn) to the CsC1- type (B2) structure (Pm3m). The phase transition and the metallization pressures are determined theoretically. The pressure effect on the optical properties is discussed. The results are compared with the previous calculations and experimental data.  相似文献   

4.
    
Results are presented of a first‐principles calculation of the direct band‐gap pressure coefficient ag for a series of Al, Ga and In chalcopyrite semiconductor compounds AgXY2 (X = Ga, In; Y = S, Se, Te) and the corresponding zinc‐blende structure. Good agreement was found between the calculated and experimental pressure coefficients. It was found that ag in chalcopyrites are dramatically reduced relative to zinc‐blende compounds, and that the Al → Ga → In substitution lowers ag in chalcopyrites more than in zinc‐blende compounds. As a result, the empirical rule suggested for zinc‐blende compounds, stating that for a given transition (e.g. Γ15vΓ1c) ag does not depend on substitutions, has to be modified for chalcopyrites. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

5.
    
Equilibrium lattice constants, bulk modulus, electronic band structure, and different optical transitions calculated by means of the full potential linearized augmented plane wave method are presented for BeCN2 in the chalcopyrite structure. Analysis of the band structure suggests a pseudo‐direct band gap, which refers to an indirect band gap in binary compounds. We also discuss the relationships of the principal band gaps of the c‐BN zinc‐blende analogs. We investigate the assignment of the different optical transitions that are discussed in more detail from the reflectivity spectra. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

6.
    
The structural, electronic and optical properties of the antifluorite semiconductors Mg2X (X = Si, Ge, Sn) have been studied using the full potential linearized augmented plane wave (FPLAPW) method. For treating the exchange‐correlation term, the local density approximation (LDA) has been chosen. The total energy approach is used to determine the equilibrium volume. The energy gap is found to be indirect for all the compounds. Results for electronic properties such as band structures, density of states and electronic charge densities are presented. The optical properties are derived and interpreted. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

7.
    
A detailed study of structural, electronic and optical properties of II–IV–N2 ternary compounds (II = Be, Zn; IV = Si, Ge) has been performed by means of ab initio density functional theory calculations. The germanium containing compounds were found to be direct‐gap semiconductors with gaps of 3.37 eV and 1.67 eV for BeGeN2 and ZnGeN2, respectively, with oscillator strength of direct transition comparable to GaN. Two other silicon containing compounds are characterized by indirect gaps of 5.19 (3.32) eV for BeSiN2 (ZnSiN2). Crystal structure being orthorhombic and lattice parameters for BeSiN2 and ZnSiN2 are in good agreement with the available experimental data. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

8.
    
A detailed study of the electronic and optical properties of recently discovered ruthenium disilicide (RuSi2) has been performed by means of ultrasoft pseudopotential and full‐potential linearized augmented plane wave methods. Three phases were considered as in FeSi2, and like that compound only the orthorhombic structure (β‐phase) was found to be an indirect bandgap semiconductor. The remaining two (α‐ and γ‐) phases, which show metallic behavior, are studied by density of states (DOS) and compared with those of FeSi2. Optical properties are discussed by analyzing the imaginary part of the dielectric function and the dipole matrix elements corresponding to different interband transitions. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

9.
An investigation of structural stabilities, electronic and optical properties of SrF2 under high pressure is conducted using a first-principles calculation based on density functional theory (DFT) with the plane wave basis set as implemented in the CASTEP code. Our results predict that the second high-pressure phase of SrF2 is of a Ni2In- type structure, and demonstrate that the sequence of the pressure-induced phase transition of SrF2 is the fluorite structure (Fm3m) to the PbC12-type structure (Pnma), and to the Ni2In-type phase (P63/mmc). The first and second phase transition pressures are 5. 77 and 45.58 GPa, respectively. The energy gap increases initially with pressure in the Fm3m, and begins to decrease in the Pnma phases at 30 GPa. The band gap overlap metallization does not occur up to 210 GPa. The pressure effect on the optical properties is discussed.  相似文献   

10.
    
While the orthorhombic IV–VI compounds show the typical layered behavior of that crystallography, we show that the presence of sulphur induces important changes to the band gap behaviour: both in its location, and in its character as well. Our modelling of tin sulfide (SnS) and tin selenide (SnSe), performed within an ab initio density‐functional theory (DFT) with a FP‐LAPW method, shows that the spin–orbit interaction produces slight splittings of bands in both compounds, especially in the conduction band, which are in very good agreement with measured values of the core spectra. In addition to these splittings, for SnS we found the novel feature that the spin–orbit relocates the band gap in the BZ, while it does not affect that of SnSe. Furthermore, several aspects of the crystals anisotropy may be explained upon our results on the hybridized band structure, the density of states (DOS) and the optical spectra (complex dielectric function and absorption coefficient). We satisfactorily compare our results with those available in the literature. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

11.
    
We have systematically studied electronic structure of chalcopyrite‐type CuInSe2 and the other chalcopyrite compounds, ABX 2 (A = Cu, Ag; B = In, Ga, Al; X = Se, S). First‐principles calculations were performed within a density functional theory with the generalized gradient approximation (GGA), using a plane‐wave pseudopotential method. Valence band maximum (VBM) of CuBX 2 is an antibonding state of Cu 3d and Se 4p (S 3p), while conduction band minimum (CBM) is also an antibonding state derived from B n s and Se 4p (S 3p). Theoretical band gap increases at the order of In, Ga, Al and the values of sulfides, CuB S2 were larger than those of the corresponding selenides, CuB Se2. In present study, we found that the lowest unoccupied n s orbital of B atom in the conduction band shift up to higher energy. Therefore, the band gaps of CuB Se2 (CuB S2) increase at the order of In, Ga, Al with shifting of n s orbital for B atom. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

12.
The effect of In doping on the electronic structure and optical properties of Sr2 TiO4 is investigated by a firstprinciples calculation of plane wave ultrasoft pseudopotentials based on density functional theory. The calculated results reveal that corner-shared TiO6 octahedra dominate the main electronic properties of Sr2TiO4 and the covalency of the Ti-O(1) bond in the ab plane is stronger than that of the Ti-O(2) bond along the c-axis. After In doping, there is a little lattice expansion in Sr2In0.125 Ti0.875 O4 and the interaction between the Ti-O bond near the impurity In atom is weakened. The binding energies of Sr2TiO4 and Sr2In0.125Ti0.875O4 estimated from the electronic structure calculations indicate that the crystal structure of Sr2In0.125 Ti0.875 O4 is still stable after doping, but its stability is lower than that of undoped Sr2TiO4. Moreover, the valence bands (VBs) of the Sr2In0.125Ti0.875O4 system consist of O 2p and In 4d states, and the mixing of O 2p and In 4d states makes the top VBs shift significantly to high energies, resulting in visible light absorption. The adsorption of visible light is of practical importance for the application of St2 TiO4 as a photocatalyst.  相似文献   

13.
Electronic properties and elastic constants of AlN in the wurtzite, zinc-blende and rocksalt structures are investigated using an ab initio pseudopotential method based on the density-functional theory with both the local-density approximation and the generalized gradient approximation for the exchange-correlation functional. The numerically calculated results compare well with the existing experimental data. For elastic constants of rocksalt AlN our results are predictions.  相似文献   

14.
Electronic and optical properties of InP in zincblende crystal structure are studied using the full potential linearized augmented plane wave plus local orbitals (FP-LAPW+lo) program. The complex dielectric function and optical constants, such as optical absorption coefficient, reflectivity, refractive index and extinction coefficient, are calculated, which are in good agreement with the experimental results, better than those from the full potential linear muffin-tin orbital (FP-LMTO) method. We also have explained the origin of the spectral peaks on the basis of the electronic band structures.  相似文献   

15.
    
The ground state electronic structure of wurtzite AlN, GaN, and InN has been calculated using full‐relativistic all‐electron full‐potential linearized‐augmented plane‐wave method. Several DFT exchange‐correlation functionals, including the recently proposed non‐empirical meta‐generalised gradient approximation (Meta‐GGA) have been used. The role played by relativistic effects and meta‐GGA functional on the band structures and the density of states is discussed. We find that the meta‐GGA improves the accuracy of the structural properties as well as the energies of the semicore d states in both GaN and InN. This new functional slightly outperforms the local density approximation (LDA) and the generalized gradient approximation (GGA) overall as to lattice parameters, bulk modulus, and valence band widths. We find also that the meta‐GGA induced modifications of the band structure are significant, but limited to the valence band states, while leaving all other features identical to LDA and GGA calculations. Finally, our results show that GaN and InN present anomalous dependence of the valence band splitting versus pressure. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

16.
    
We investigate the electronic properties of the technologically important wide‐band‐gap semiconductor GaN employing ‘state‐of‐the‐art’ DFT‐LDA calculations using a FP‐LAPW code. The Ga 3d electrons are treated both as core or as valence electrons and the wurtzite as well as the zincblende modifications of GaN are investigated. In particular, we address the influence of the lattice configuration and of the d electrons to the electronic structure of w‐GaN and c‐GaN. Band structures, densities of states, orbital‐resolved densities of states, total and partial valence charge densities, and ionicity factors are analysed in great detail. The calculated values of the energy gaps, bandwidths, spin–orbit, crystal‐field splittings, and the correct band degeneracies are compared to experimental and/or ab initio results. Several features of w‐GaN resemble those of c‐GaN. Most of the calculated band parameters, of band gaps, total and upper‐valence bandwidths, and antisymmetric gap for w‐GaN are close to those of c‐GaN within 1%. The charge distributions have similar features meaning that this material has the same ionicity factor with or without Ga 3d hybridization in both structures. By examining the pressure dependence of the energy band gaps, the value of the hydrostatic deformation potential of the band gap has also been calculated.  相似文献   

17.
18.
Electronic structure and optical properties of SrHfO3 are calculated using the full potential linearized augmented plane wave plus local orbitals method. The calculated equilibrium lattice is in reasonable agreement with the experimental data. From the density of states (DOS) as well as charge density studies, we find that the bonding between Sr and HfO3 is mainly ionic and that HfO3 entities bond covalently. The complex dielectric functions are calculated, which are in good agreement with the available experimental results. The effect of the spin-orbit coupling on the optical properties is also investigated and found to be quite small.  相似文献   

19.
    
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20.
In this work, we aimed to examine the spin-polarized electronic band structures, the local densities of states as well as the magnetism of ZnMnTe- and CdMnTe-diluted magnetic semiconductors (DMSs) in the ferromagnetic phase, and with 25% of Mn. The calculations are performed by the recent ab initio full potential augmented plane waves plus local orbitals (FP−L/APW+lo) method within the spin-polarized density-functional theory and the local spin density approximation. We have determined the exchange splittings produced by the Mn d states: Δx(d) and Δx(pd), and we found that the effective potential for the minority spin is more attractive than that for the majority spin. Also, we show the nature of the bonding from the charge spin-densities calculations, and we calculate the exchange constants N0α and N0β, which mimics a typical magneto-optical experiment. The calculated total magnetic moment is found to be equal to 5μB for both DMSs. This value indicates that every Mn impurity adds no hole carriers to the perfect ZnTe and CdTe crystals. Furthermore, we found that p–d hybridization reduces the local magnetic moment of Mn and produces small local magnetic moments on the nonmagnetic Te, Zn and Cd sites.  相似文献   

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