Temperature dependent Raman scattering in polycrystalline Bi4Ti3O12 thin films

Polycrystalline Bi₄Ti₃O₁₂ thin films were prepared on quartz substrates by pulsed laser deposition. The films were crystallized in the orthorhombic layer perovskite structure confirmed by X-ray diffraction and Raman spectroscopy. The Raman spectra are strongly dependent on temperature. A subtle phase transition in the temperature range 473-573 K exists in polycrystalline BTO thin films, which is evidenced by the disappearance of the Raman band at 116 cm⁻¹ and appearance of a new Raman band at 151 cm⁻¹. The two broad Raman bands centered at the 57 and 93 cm⁻¹ at 300 K break up into clusters of several sharp Raman peaks at 77 K, due to monoclinic distortion of orthorhombic structure at low temperature in the as-prepared Bi₄Ti₃O₁₂ thin films.     

Effect of ion nitriding on the crystal structure of 3 mol% Y2O3-doped ZrO2 thin-films prepared by the sol-gel method

We investigated the effect of ion nitriding on the crystal structure of 3 mol% Y₂O₃-doped ZrO₂ (3YSZ) thin-films prepared by the sol-gel method. For this purpose, we used X-ray diffractometry to determine the crystalline phases, the lattice parameters, the crystal sizes, and the lattice microstrains, and glow discharge-optical emission spectroscopy to obtain the depth profiles of the elemental chemical composition. We found that nitrogen atoms substitute oxygen atoms in the 3YSZ crystal, thus leading to the formation of unsaturated-substitutional solid solutions with reduced lattice parameters and Zr_0.94Y_0.06O_1.72N_0.17 stoichiometric formula. We also found that ion nitriding does not affect the grain size, but does generate lattice microstrains due to the increase in point defects in the crystalline lattice.     

Combinatorial exploration of flux material for Bi4Ti3O12 single crystal film growth

The combinatorial approach to materials synthesis was employed for the quick screening of a flux material for liquid phase-mediated epitaxy of Bi₄Ti₃O₁₂ single crystal film. A series of ternary flux libraries composed of two self-fluxes (Bi₂O₃ and Bi₄Ti₃O₁₂) and an impurity flux (VO_x, WO_x, CuO_x, BiPO_x, BaO, MoO_x) were fabricated on the SrTiO₃ (0 0 1) substrates. Then, stoichiometric Bi₄Ti₃O₁₂ was grown on each one of these flux libraries at a temperature presumed to melt the flux. High-throughput characterization with the concurrent X-ray diffraction (XRD) method resulted in the discovery of a novel flux material, CuO, containing Bi₂O₃, for Bi₄Ti₃O₁₂ single crystal film.     

Microstructure of Epitaxial Er2O3 Thin Film on Oxidized Si (111) Substrate

Er₂O₃ thin films are grown on oxidized Si (111) substrates by molecular beam epitaxy. The sample grown under optimized condition is characterized in its microstructure, surface morphology and thickness using grazing incidence x-ray diffraction (GIXRD), atomic force morphology and x-ray reflectivity. GIXRD measurements reveal that the Er₂O₃ thin film is a mosaic of single-crystaldomains. The interplanar spacing d in-plane residual strain tensor ε_| and the strain relaxation degree ξ are calculated. The Poisson ratio μ obtained by conventional x-ray diffraction is in good agreement with that of the bulkEr₂O₃. In-plane strains in three sets of planes, i.e. (440), (404), and (044), are isotropic.     

Microstructures and electrical properties of La0.8Sr0.2MnO3 films synthesized by sol-gel method

La_0.8Sr_0.2MnO₃ (LSMO) thin films were fabricated on alumina substrates by an improved sol-gel dip-coating process. It was found that multiple dip-coating process could not be performed until the pre-firing temperature reached 600 °C. Different amounts of LSMO powders were added to precursor solution with an aim to avoid cracks in LSMO thin films during calcining caused by the shrinkage mismatch between the film and the substrate. The structure and surface morphology of the films prepared from precursors with and without LSMO powders were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was found that the addition of 56.4 wt.% LSMO powders into the sol-gel precursor solution significantly modified the microstructure of films. A single LSMO perovskite phase was obtained on alumina substrate after calcining at 800 °C for 4 h by the improved sol-gel method. The sheet resistance of the films prepared with different processing parameters was measured by four-point dc method. Results indicated that the sheet resistance of films decreased with increasing the number of coating applications and the amount of LSMO powders.     

Mechanical stress induced polarization reorientation in polycrystalline Bi3.25La0.75Ti3O12 films

A wafer bending stage and a scanning probe microscope are combined to investigate the in situ domain pattern evolution in polycrystalline Bi_3.25La_0.75Ti₃O₁₂ films under stress. We observe the stress induced polarization reorientation that sensitively depends on the relative alignment of the BLT unit cell with respect to the stress.     

Effect of incorporating nonlanthanoidal indium on optical properties of ferroelectric Bi4Ti3O12 thin films

Bi₄Ti₃O₁₂ (BTO) and Bi_3.25In_0.75Ti₃O₁₂ (BTO:In) thin films were prepared on fused quartz and LaNiO₃/Si (LNO) substrates by chemical solution deposition (CSD). Their microstructures, ferroelectric and optical properties were investigated by X-ray diffraction, scanning electron microscope, ferroelectric tester and UV-visible-NIR spectrophotometer, respectively. The optical band-gaps of the films were found to be 3.64 and 3.45 eV for the BTO and BTO:In films, respectively. Optical constants (refractive indexes and extinction coefficients) were determined from the optical transmittance spectra using the envelope method. Following the single electronic oscillator model, the single oscillator energy E₀, the dispersion energy E_d, the average interband oscillator wavelength λ₀, the average oscillator strength S₀, the refractive index dispersion parameter (E₀/S₀), the chemical bonding quantity β, and the long wavelength refractive index n_∞ were obtained and analyzed. Both the refractive index and extinction coefficient of the BTO:In films are smaller than those of the BTO films. Furthermore, the refractive index dispersion parameter (E₀/S₀) increases and the chemical bonding quantity β decreases in the BTO and BTO:In films compared with those of bulk.     

Effect of interfacial diffusion on microstructure and properties of FePt/B4C multifunctional multilayer composite films

FePt/B₄C multilayer composite films were prepared by magnetron sputtering and subsequent annealing in vacuum. By changing Fe layer thickness of [Fe/Pt]₆/B₄C films, optimal magnetic property (8.8 kOe and remanence squareness is about 1.0) is got in [Fe(5.25 nm)/Pt(3.75 nm)]₆/B₄C sample whose composition is Fe rich and near stoichiometric ratio. The characterizations of microstructure demonstrate that the diffusion of B and C atoms into FePt layer depends strongly on B₄C interlayer thickness. When B₄C interlayer thickness of [Fe(2.625 nm)/Pt(3.75 nm)/Fe(2.625 nm)/B₄C]₆ films is bigger than 3 nm, stable value of grain size (6-6.5 nm), coercivity (6-7 kOe) and hardness (16-20 GPa) is observed. Finally, the multifunctional single FePt/B₄C composite film may find its way to substitute traditional three-layer structure commonly used in present data storage technology.     

Variable-temperature Raman scattering and X-ray diffraction studies of Bi3.25Nd0.75Ti3O12 ceramics

Neodymium-substituted bismuth titanate (Bi_3.25Nd_0.75Ti₃O₁₂, BNT_0.75) ceramics was prepared by chemical co-precipitation along with calcinations. The lattice instability has been investigated by variable-temperature Raman scattering and X-ray diffraction. The results showed that there was an orthorhombic to pseudo-tetragonal phase transition at about 695 K, in terms of the evolution of temperature dependence of Raman scattering frequencies. Some changes at about 695 K in the XRD lines, the lattice parameters (a, b, and c) as well as the orthorhombic distortion b/a have been detected in the high temperature X-ray diffraction, which confirmed the conclusion that the BNT_0.75 ceramics undergoes a ferroelectric to paraelectric phase transition at about 695 K.     

Effect of a LaSrCoO3 buffer layer on Pb1 − xLaxTi1 − x/4O3 films studied by polarized Raman spectroscopy

A confocal Raman investigation of Pb_1 − xLa_xTi_1 − x/4O₃ (PLT) thin films grown by RF magnetron sputtering on PbO_x/Pt/Ti/SiO₂/Si substrates with an intermediate LaSrCoO₃ (LSCO) layer was performed. The influence of the LaSrCoO₃ buffer layer was analyzed taking advantage of the observed Raman spectral band variation, which varied according to different manufacturing procedures. In the presence of a LSCO layer, the A1(1TO) Raman mode, which was indicative of tetragonal distortion, was pronouncedly enhanced, and a slight deviation from the (0 0 1) plane of the film was observed from the angular dependence of the polarized Raman spectral intensity. Furthermore, the spectral band variation as well as the residual stress along the in-depth direction was measured in the film from cross-sectional spectral line scans. This latter measurement showed a relaxation of the lattice mismatch in the presence of LSCO and PbO layers.     

Raman spectroscopic studies of PbxLa1−xTi1−x/4O3 thin films grown on Si substrates by RF magnetron sputtering

A systematic spectroscopic investigation of Pb_xLa_1−xTi_1−x/4O₃ (PLT) thin films grown on PbO_x/Pt/Ti/SiO₂/Si substrate by RF magnetron sputtering was performed by using confocal Raman spectroscopy. Influence of the growth condition modification including different growth temperatures, with various buffer layer thickness, and post-annealing treatments were analyzed with taking advantages of the corresponding Raman spectral band variation in the respective process. Significant change in the spectral bands occurred with the alteration of the growth condition, and the related mechanisms were discussed after spectral deconvolution, providing reliable information about the direction for film growth.     

Crystallization of amorphous Ge2Sb2Te5 films induced by a single femtosecond laser pulse

Crystallization is achieved in amorphous Ge₂Sb₂Te₅ films upon irradiation with a single femtosecond laser pulse. Transmission electron microscopy images evidence the morphology of the crystallized spot which depends on the fluence of the femtosecond laser pulse. Fine crystalline grains are induced at low fluence, and the coarse crystalline grains are obtained at high fluence. At the damage fluence, ablation of the films occurs.     

Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering

CdIn₂O₄ thin films were prepared by direct-current (DC) reactive magnetron sputtering. The structure, surface morphology and the chemical composition of the thin films were analyzed by X-ray diffraction (XRD), atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The electrical properties of the films prepared in different oxygen concentration and annealing treatment were determined, and the effects of the preparing conditions on the structure and electrical properties were also explored. It indicates that the CdIn₂O₄ thin films with uniform and dense surface morphology contain mainly CdIn₂O₄, In₂O₃ phases, and CdO phase is also observed. The XPS analysis confirms the films are in oxygen-deficient state. The electrical properties of these films significantly depend on the preparing conditions, the resistivity of the films with the oxygen concentration of 4.29% is 2.95 × 10⁻⁴ Ω cm and the Hall mobility is as high as 60.32 cm²/V s. Annealing treatment can improve the electrical performance of the films.     

Growth and structure of Bi0.5(Na0.7K0.2Li0.1)0.5TiO3 thin films prepared by pulsed laser deposition technique

Bi_0.5(Na_0.7K_0.2Li_0.1)_0.5TiO₃ (BNKLT) thin films were prepared on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition (PLD) technique. The films prepared were examined by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The effects of the processing parameters, such as oxygen pressure, substrate temperature and laser power, on the crystal structure, surface morphology, roughness and deposition rates of the thin films were investigated. It was found that the substrate temperature of 600 °C and oxygen pressure of 30 Pa are the optimized technical parameters for the growth of textured film, and all the thin films prepared have granular structure, homogeneous grain size and smooth surfaces.     

Electrical behavior of BaZr0.1Ti0.9O3 and BaZr0.2Ti0.8O3 thin films

BaZr_0.1Ti_0.9O₃ and BaZr_0.2Ti_0.8O₃ (BZT) thin films were deposited on Pt/Ti/LaAlO₃ (1 0 0) substrates by radio-frequency magnetron sputtering, respectively. The films were further annealed at 800 °C for 30 min in oxygen. X-ray diffraction θ-2θ and Φ-scans showed that BaZr_0.1Ti_0.9O₃ films displayed a highly (h 0 0) preferred orientation and a good cube-on-cube epitaxial growth on the LaAlO₃ (1 0 0) substrate, while there are no obvious preferential orientation in BaZr_0.2Ti_0.8O₃ thin films. The BaZr_0.1Ti_0.9O₃ films possess larger grain size, higher dielectric constant, larger tunability, larger remanent polarization and coercive electric field than that of BaZr_0.2Ti_0.8O₃ films. Whereas, BaZr_0.1Ti_0.9O₃ films have larger dielectric losses and leakage current density. The results suggest that Zr⁴⁺ ion can decrease dielectric constant and restrain non-linearity. Moreover, the enhancement in dielectric properties of BaZr_0.1Ti_0.9O₃ films may be attributed to (1 0 0) preferred orientation.     

Structural properties of CuInSe2 films prepared by selenization of metallic precursors on MoNx film substrates

The aim of this work was to study the effect of MoN_x film substrates on the structural properties of CuInSe₂ films prepared by selenization of metallic Cu-In alloy precursors. MoN_x films were prepared by reactive dc-magnetron sputtering. All the CuInSe₂ films exhibit single phase chalcopyrite structure with (1 1 2) preferred orientation, which can be explained by the reduction of lattice mismatch between CuInSe₂ and MoN_x. The bulk composition of selenized CuInSe₂ films are near stoichiometric, but the surface composition analysis suggests Cu deficiency on surface area. Furthermore, ordered defect compound, CuIn₂Se_3.5 is found on the surface of CuInSe₂ films. The results will be helpful for fabricating Cd-free ZnO buffer layer CuInSe₂ and Cu(In_1−xGa_x)Se₂ based thin film solar cells.     

ZnO-Fe3O4 composite prepared by sol-gel method with H2 deoxidation

Fe doped ZnO powder samples (Fe/Zn=0.05 and 0.1) were prepared by sol-gel method with H₂ deoxidation at 450 ^°C for several hours or just heated in air at the same temperature. It was showed by vibrating sample magnetometer (VSM) that samples heat treated in H₂ could show strong ferromagnetism at room temperature while samples treated in air only show very weak magnetism. XRD using Co kα X-ray revealed that the samples heated in H₂ were not pure phase but like a granular system and the magnetism mainly results from Fe₃O₄ in samples while samples heated in air showed pure ZnO phase. Our work indicated that H₂ deoxidation treatment may be an effective technique to fabricate such magnetic semiconductor-like materials with Curie temperature higher than room temperature.     

Ferroelectric properties of Pr6O11-doped Bi4Ti3O12

Praseodymium doped Bi₄Ti₃O₁₂ (BIT) ceramics with composition Bi_2.9Pr_0.9Ti₃O₁₂ (BPT) were prepared by solid state reaction. These samples have polycrystalline Bi-layered perovskite structure without preferred orientation, and consist of well-developed plate-like grains with random orientation. Pr doping into BIT causes a large shift of the Curie temperature (T_C) of the BIT from 675 to 398 °C. At an electric field of 87 kV/cm, the remanent polarization and the coercive field of the BPT ceramics are 30 μC/cm² and 52 kV/cm, respectively. Furthermore, the dielectric permittivity and the dissipation factor of the BPT ceramics are 300 and 0.003 at 1 MHz, 1 V, and room temperature. Ferroelectric properties of the BPT ceramics are superior to V-doped Bi₄Ti₃O₁₂ (∼20 μC/cm² and 80 kV/cm) and (Sr, Ta)-doped Bi₄Ti₃O₁₂ (∼12 μC/cm² and 71 kV/cm) ceramics. In addition, the dense ceramics of praseodymium-doped B₄Ti₃O₁₂ were obtained by sintering at 1100 °C, about 100-200 °C lower than those of the SrBi₂Ta₂O₉ system.     

Deposition and characterization of La2Ti2O7 thin films via spray pyrolysis process

Thin films of La₂Ti₂O₇ have been deposited on fused silica and Si substrates by a spray pyrolysis method using ethylene glycol solution of La(III)-Ti(IV)-citrate complexes as starting material and O₂ as a carrier gas. The composition, crystal structure and morphology of the films are studied.     

Si基Bi3.25La0.75Ti3O12铁电薄膜的制备与特性研究

采用Sol-Gel工艺低温制备了Si基Bi_3.25La_0.75Ti₃O₁₂铁电薄膜.研究了退火温度对薄膜微观结构、介电特性与铁电性能的影响.500℃退火处理的Bi_3.25La_0.75Ti₃O₁₂薄膜未能充分晶化，晶粒细小且有非晶团聚，介电与铁电性能均较差.高于550℃退火处理的Bi_3.25La_{0.75 关键词： 铁电薄膜 3.25}La_0.75Ti₃O₁₂')" href="#">Bi_3.25La_0.75Ti₃O₁₂ Sol-Gel工艺